986 resultados para Tm3 doped fluorophosphate glasses
Resumo:
Lithium silicophosphate glasses have been prepared by a sol-gel route over a wide range of compositions. Their structural and electrical properties have been investigated. Infrared spectroscopic studies show the presence of hydroxyl groups attached to Si and P. MAS NMR investigations provide evidence for the presence of different phosphatic units in the structure. The variations of de conductivities at 423 K and activation energies have been studied as a function of composition, and both exhibit an increasing trend with the ratio of nonbridging oxygen to bridging oxygen in the structure. Ac conductivity behavior shows that the power law exponent, s, is temperature dependent and exhibits a minimum. Relaxation behavior has been examined in detail using an electrical modulus formalism, and modulus data were fitted to Kohlraush-William-Watts stretched exponential function. A structural model has been proposed and the unusual properties exhibited by this unique system of glasses have been rationalized using this model. Ion transport in these glasses appears to be confined to unidimensional conduits defined by modified phosphate chains and interspersed with unmodified silica units.
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Neutron diffraction measurement is carried out on GexSe1-x glasses, where 0.1 less than or equal to x less than or equal to 0.4, in a Q interval of 0.55-13.8 Angstrom(-1). The first sharp diffraction peak (FSDP) in the structure factor, S(Q), shows a systematic increase in the intensity and shifts to a lower Q with increasing Ge concentration. The coherence length of FSDP increases with x and becomes maximum for 0.33 less than or equal to x less than or equal to 0.4. The Monte-Carlo method, due to Soper, is used to generate S(Q) and also the pair correlation function, g(r). The generated S(Q) is in agreement with the experimental data for all x. Analysis of the first four peaks in the total correlation function, T(r), shows that the short range order in GeSe2 glass is due to Ge(Se-1/2)(4) tetrahedra, in agreement with earlier reports. Se-rich glasses contain Se-chains which are cross-linked with Ge(Se-1/2)(4) tetrahedra. Ge-2(Se-1/2)(6) molecular units are the basic structural units in Ge-rich, x = 0.4, glass. For x = 0.2, 0.33 and 0.4 there is evidence for some of the tetrahedra being in an edge-shared configuration. The number of edge-shared tetrahedra in these glasses increase with increasing Ge content.
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Poly( ethylene oxide), poly(vinyl alcohol): and their blend in a 40 : 60 mole ratio were doped with aluminum isopropoxide. Their structural, thermal, and electrical properties were studied. Aluminum isopropoxide acts as a Lewis acid and thus significantly influences the electrical properties of the polymers and the blend. It also acts as a scavanger for the trace quantities of water p-resent in them, thereby reducing the magnitude of proton transport. It also affects the structure of polymers that manifests in the thermal transformation and decomposition characteristics.
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We have measured the thermopower (S) of hole-doped LaMnO3 systems in order to see its dependence on the Mn4+ content as well as to investigate other crucial factors that determine S. We have carried out hole doping (creation of Mn4+ by two distinct means, namely, by the substitution of La by divalent cations such as Ca and Sr and by self-doping without aliovalent substitution). The thermopower is sensitive not only to the hole concentration but also to the process employed for hole doping, which we explain as arising from the differences in the nature of the hole-doped states. We also point out a general trend in the dependence of S on hole concentration at high temperatures (T> T-c), similar to that found in the normal-state thermopower of the cuprates.
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In this study, we report an approach for the adsorption and desorption of anionic (sulfonated) dyes from aqueous solution by doped polyaniline. In this study, we have synthesized PANI with two dopants, namely, p-toluenesulfonic acid (PTSA) and camphorsulfonic acid (CSA), and used these to adsorb various dyes. It was found that the doped PANI selectively adsorbs anionic dyes and does not adsorb cationic dyes. The adsorption of anionic dyes causes the variation in electrical conductivity of PANI, indicating its potential as a conductometric sensor for these dyes at very low concentration. The adsorbed dyes were desorbed from the polymer by using a basic aqueous solution. The adsorption and desorption kinetics of the dye in the presence of doped PANI were also determined.
Resumo:
The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe45 (2 <= x <= 9) glasses have been investigated by alternating differential scanning calorimetry and electrical-switching experiments, respectively. The addition of Sb is found to enhance the glass forming tendency and stability as revealed by the decrease in non-reversing enthalpy Delta H-nr. and an increase in the glass-transition width Delta T-g. Further, the glass-transition temperature of SbxSe55-xTe45 glasses, which is a measure of network connectivity, exhibits a subtle increase, suggesting a meager network growth with the addition of Sb. The crystallization temperature is also observed to increase with Sb content. The SbxSe55-xTe45 glasses (2 <= x <= 9) are found to exhibit memory type of electrical switching, which can be attributed to the polymeric nature of network and high devitrifying ability. The metallicity factor has been found to dominate over the network connectivity and rigidity in the compositional dependence of switching voltage. which shows a profound decrease with the addition of Sb.
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Good quality single crystals of copper metagermanite, CuGeO3, are grown by flux technique. Growth is carried out at relatively low temperatures by using Bi2O3 along with CuO in an optimal flux ratio. Besides rendering the procedure simple, lower growth temperature reduces growth defect concentration. Single crystals of Cu1 - xCoxGeO3 and CuGe1 - yGayO3 are grown by the same method for different values of x and y to investigate the influence of in-chain and off-chain doping on spin-Peierls (SP) transition. Change in color, morphology and surface features as a result of doping are briefly discussed. Spin-Peierls transition of these crystals is studied by susceptibility measurements on a commercial SQUID magnetometer. Cationic substitution resulted in reduction of spin-Peierls transition temperature (T-SP) of CuGeO3. Substitution of magnetic impurity cobalt in-chain site caused more pronounced effects such as suppression of SP phase.
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Low-temperature electroluminescence (EL) is observed in n-type modulation-doped AlGaAs/InGaAs/GaAs quantum well samples by applying a positive voltage between the semitransparent Au gate and alloyed Au–Ge Ohmic contacts made on the top surface of the samples. We attribute impact ionization in the InGaAs QW to the observed EL from the samples. A redshift in the EL spectra is observed with increasing gate bias. The observed redshift in the EL spectra is attributed to the band gap renormalization due to many-body effects and quantum-confined Stark effect.
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Fine particle FeVO4, AIVO4, YVO4 and Yo.95Eu0.05VO4 have been prepared by the combustion of aqueous solutions containing corresponding metal nitrate, ammonium metavanadate, ammonium nitrate and 3-methyl-5-pyrazolone.The solutions containing the redox mixtures, when rapidly heated at 370 °C, ignite and undergo self-propagating,gas-producing, exothermic reactions to yield fine particle metal vanadates. Formation of crystalline vanadates was confirmed by powder X-ray diffraction patterns,27A1 nuclear magnetic resonance, IR and fluorescence spectra.
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Semieonducting GaxTe~oo-x (17 -< x _< 25) glasses have been prepared by melt quenching method and thermal crystallization studies carried out using differential scanning calorimetry. On heating, virgin GaxTel0o-x glasses exhibit one glass transition and two crystallization reactions.The first crystallization reaction corresponds to the precipitation of hexagonal Te and the second one to the crystallization of the matrix into zinc blende Ga2Te3 phase. If GaxTeloo-x glasses are quenched to ambient temperature from Tcrl and reheated, they exhibit the phenomenon of double glass transition.
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Nonlinear absorption and refraction phenomena in stoichiometric lithium niobate (SLN) pure and co-doped with Zn and Nd, and congruent lithium niobate (CLN) were investigated using Z-scan technique. Femtosecond laser pulses from Ti:Sapphire laser (800 nm, 110 fs pulse width and 1 kHz repetition rate) were utilized for the experiment. The process responsible for nonlinear behavior of the samples was identified to be three photon absorption (3PA). This is in agreement with the band gap energies of the samples obtained from the linear absorption cut off and the slope of the plot of Ln(1 − TOA) vs. Ln(I0) using Sutherland’s theory (s = 2.1, for 3PA). The nonlinear refractive index (n2) of Zn doped samples was found to be lower than that of pure samples. Our experiments show that there exists a correlation between the nonlinear properties and the stoichiometry of the samples. The values of n2 fall into the same range as those obtained for the materials of similar band gap.
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Raman bandwidths and bandshapes of some molecular and ionic glasses have been investigated through the glass-transition region. Widths of both polarised and depolarised bands exhibit step-like changes during the glass transition. Molecular and ionic glasses differ with respect to the magnitude and the nature of variations in bandwidths and reorientational times. An attempt has been made to understand the changes in bandwidths around the glass-transition temperature.
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A study of the effect of bismuth dopant on the electronic transport properties of the amorphous semiconductors Ge20S80-xBix under high pressure (up to 140 kbar) has been carried out down to liquid-nitrogen temperature. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy at all pressures and for all compositions. A remarkable resemblance between the electronic conduction process, x-ray diffraction studies, and differential thermal analysis results is revealed. It is proposed that the n-type conduction in germanium chalcogenides doped with a large Bi concentration is due to the effect of Bi dopants on the positive correlation energy defects present in germanium chalcogenides. The impurity-induced chemical modification of the network creates a favorable environment for such an interaction.
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Recent observation of n-type conduction in amorphous Ge20Ss_xBix at large bismuth concentrations (x = 11), which otherwise shows p-type conduction, has aroused considerable interest in the international scientific community [1]. The mechanism of such impurity incorporation in a germanium chalcogenide glass is not understood and is a topic of current interest. In our recent publications [2-10] we have brought to light some hitherto unknown and interesting features of bismuth dopants in chalcogen-rich Ge-X (X -- S, Se) glassy compositions. In this communication we present our new results of investigations on vitreous semiconductors Ge20S80 Bi using electron microscopy, electron diffraction of as-prepared and annealed/pressure quenched compositions. Our results provide conclusive support to the formation of composite clusters containing all the three elements, germanium, sulphur and bismuth, which crystallize in simpler stoichiometric compounds Bi2S3 and GeS2.
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The application of mesoporous silica nanospheres (MSNs) loaded with drugs/growth factors to induce osteogenic differentiation of stem cells has been trialed by a number of researchers recently. However, limitations such as high cost, complex fabrication and unintended side effects from supraphysiological concentrations of the drugs/growth factors represent major obstacles to any potential clinical application in the near term. In this study we reported an in situ one-pot synthesis strategy of MSNs doped with hypoxia-inducing copper ions and systematically evaluated the nanospheres by in vitro biological assessments. The Cu-containing mesoporous silica nanospheres (Cu-MSNs) had uniform spherical morphology (∼100 nm), ordered mesoporous channels (∼2 nm) and homogeneous Cu distribution. Cu-MSNs demonstrated sustained release of both silicon (Si) and Cu ions and controlled degradability. The Cu-MSNs were phagocytized by immune cells and appeared to modulate a favorable immune environment by initiating proper pro-inflammatory cytokines, inducing osteogenic/angiogenic factors and suppressing osteoclastogenic factors by the immune cells. The immune microenvironment induced by the Cu-MSNs led to robust osteogenic differentiation of bone mesenchymal stem cells (BMSCs) via the activation of Oncostation M (OSM) pathway. These results suggest that the novel Cu-MSNs could be used as an immunomodulatory agent with osteostimulatory capacity for bone regeneration/therapy application. Statement of significance In order to stimulate both osteogenesis and angiogenesis of stem cells for further bone regeneration, a new kind of hypoxia-inducing copper doped mesoporous silica nanospheres (Cu-MSNs) were prepared via one-pot synthesis. Biological assessments under immune environment which better reflect the in vivo response revealed that the nanospheres possessed osteostimulatory capacity and had potential as immunomodulatory agent for bone regeneration/therapy application. The strategy of introducing controllable amount of therapeutic ions instead of loading expensive drugs/growth factors in mesoporous silica nanosphere provides new options for bioactive nanomaterial functionalization.