Islanding detection in Microgrids using Harmonic Signature

In recent years, there has been a growing interest in incorporating microgrids in electrical power networks. This is due to various advantages they present, particularly the possibility of working in either autonomous mode or grid connected, which makes them highly versatile structures for incorporating intermittent generation and energy storage. However, they pose safety issues in being able to support a local island in case of utility disconnection. Thus, in the event of an unintentional island situation, they should be able to detect the loss of mains and disconnect for self-protection and safety reasons. Most of the anti-islanding schemes are implemented within control of single generation devices, such as dc-ac inverters used with solar electric systems being incompatible with the concept of microgrids due to the variety and multiplicity of sources within the microgrid. In this paper, a passive islanding detection method based on the change of the 5th harmonic voltage magnitude at the point of common coupling between grid-connected and islanded modes of operation is presented. Hardware test results from the application of this approach to a laboratory scale microgrid are shown. The experimental results demonstrate the validity of the proposed method, in meeting the requirements of IEEE 1547 standards.

MOVPE growth of III-V semiconductors on silicon for third generation solar cells

Esta Tesis trata sobre el desarrollo y crecimiento -mediante tecnología MOVPE (del inglés: MetalOrganic Vapor Phase Epitaxy)- de células solares híbridas de semiconductores III-V sobre substratos de silicio. Esta integración pretende ofrecer una alternativa a las células actuales de III-V, que, si bien ostentan el récord de eficiencia en dispositivos fotovoltaicos, su coste es, a día de hoy, demasiado elevado para ser económicamente competitivo frente a las células convencionales de silicio. De este modo, este proyecto trata de conjugar el potencial de alta eficiencia ya demostrado por los semiconductores III-V en arquitecturas de células fotovoltaicas multiunión con el bajo coste, la disponibilidad y la abundancia del silicio. La integración de semiconductores III-V sobre substratos de silicio puede afrontarse a través de diferentes aproximaciones. En esta Tesis se ha optado por el desarrollo de células solares metamórficas de doble unión de GaAsP/Si. Mediante esta técnica, la transición entre los parámetros de red de ambos materiales se consigue por medio de la formación de defectos cristalográficos (mayoritariamente dislocaciones). La idea es confinar estos defectos durante el crecimiento de sucesivas capas graduales en composición para que la superficie final tenga, por un lado, una buena calidad estructural, y por otro, un parámetro de red adecuado. Numerosos grupos de investigación han dirigido sus esfuerzos en los últimos años en desarrollar una estructura similar a la que aquí proponemos. La mayoría de éstos se han centrado en entender los retos asociados al crecimiento de materiales III-V, con el fin de conseguir un material de alta calidad cristalográfica. Sin embargo, prácticamente ninguno de estos grupos ha prestado especial atención al desarrollo y optimización de la célula inferior de silicio, cuyo papel va a ser de gran relevancia en el funcionamiento de la célula completa. De esta forma, y con el fin de completar el trabajo hecho hasta el momento en el desarrollo de células de III-V sobre silicio, la presente Tesis se centra, fundamentalmente, en el diseño y optimización de la célula inferior de silicio, para extraer su máximo potencial. Este trabajo se ha estructurado en seis capítulos, ordenados de acuerdo al desarrollo natural de la célula inferior. Tras un capítulo de introducción al crecimiento de semiconductores III-V sobre Si, en el que se describen las diferentes alternativas para su integración; nos ocupamos de la parte experimental, comenzando con una extensa descripción y caracterización de los substratos de silicio. De este modo, en el Capítulo 2 se analizan con exhaustividad los diferentes tratamientos (tanto químicos como térmicos) que deben seguir éstos para garantizar una superficie óptima sobre la que crecer epitaxialmente el resto de la estructura. Ya centrados en el diseño de la célula inferior, el Capítulo 3 aborda la formación de la unión p-n. En primer lugar se analiza qué configuración de emisor (en términos de dopaje y espesor) es la más adecuada para sacar el máximo rendimiento de la célula inferior. En este primer estudio se compara entre las diferentes alternativas existentes para la creación del emisor, evaluando las ventajas e inconvenientes que cada aproximación ofrece frente al resto. Tras ello, se presenta un modelo teórico capaz de simular el proceso de difusión de fosforo en silicio en un entorno MOVPE por medio del software Silvaco. Mediante este modelo teórico podemos determinar qué condiciones experimentales son necesarias para conseguir un emisor con el diseño seleccionado. Finalmente, estos modelos serán validados y constatados experimentalmente mediante la caracterización por técnicas analíticas (i.e. ECV o SIMS) de uniones p-n con emisores difundidos. Uno de los principales problemas asociados a la formación del emisor por difusión de fósforo, es la degradación superficial del substrato como consecuencia de su exposición a grandes concentraciones de fosfina (fuente de fósforo). En efecto, la rugosidad del silicio debe ser minuciosamente controlada, puesto que éste servirá de base para el posterior crecimiento epitaxial y por tanto debe presentar una superficie prístina para evitar una degradación morfológica y cristalográfica de las capas superiores. En este sentido, el Capítulo 4 incluye un análisis exhaustivo sobre la degradación morfológica de los substratos de silicio durante la formación del emisor. Además, se proponen diferentes alternativas para la recuperación de la superficie con el fin de conseguir rugosidades sub-nanométricas, que no comprometan la calidad del crecimiento epitaxial. Finalmente, a través de desarrollos teóricos, se establecerá una correlación entre la degradación morfológica (observada experimentalmente) con el perfil de difusión del fósforo en el silicio y por tanto, con las características del emisor. Una vez concluida la formación de la unión p-n propiamente dicha, se abordan los problemas relacionados con el crecimiento de la capa de nucleación de GaP. Por un lado, esta capa será la encargada de pasivar la subcélula de silicio, por lo que su crecimiento debe ser regular y homogéneo para que la superficie de silicio quede totalmente pasivada, de tal forma que la velocidad de recombinación superficial en la interfaz GaP/Si sea mínima. Por otro lado, su crecimiento debe ser tal que minimice la aparición de los defectos típicos de una heteroepitaxia de una capa polar sobre un substrato no polar -denominados dominios de antifase-. En el Capítulo 5 se exploran diferentes rutinas de nucleación, dentro del gran abanico de posibilidades existentes, para conseguir una capa de GaP con una buena calidad morfológica y estructural, que será analizada mediante diversas técnicas de caracterización microscópicas. La última parte de esta Tesis está dedicada al estudio de las propiedades fotovoltaicas de la célula inferior. En ella se analiza la evolución de los tiempos de vida de portadores minoritarios de la base durante dos etapas claves en el desarrollo de la estructura Ill-V/Si: la formación de la célula inferior y el crecimiento de las capas III-V. Este estudio se ha llevado a cabo en colaboración con la Universidad de Ohio, que cuentan con una gran experiencia en el crecimiento de materiales III-V sobre silicio. Esta tesis concluye destacando las conclusiones globales del trabajo realizado y proponiendo diversas líneas de trabajo a emprender en el futuro. ABSTRACT This thesis pursues the development and growth of hybrid solar cells -through Metal Organic Vapor Phase Epitaxy (MOVPE)- formed by III-V semiconductors on silicon substrates. This integration aims to provide an alternative to current III-V cells, which, despite hold the efficiency record for photovoltaic devices, their cost is, today, too high to be economically competitive to conventional silicon cells. Accordingly, the target of this project is to link the already demonstrated efficiency potential of III-V semiconductor multijunction solar cell architectures with the low cost and unconstrained availability of silicon substrates. Within the existing alternatives for the integration of III-V semiconductors on silicon substrates, this thesis is based on the metamorphic approach for the development of GaAsP/Si dual-junction solar cells. In this approach, the accommodation of the lattice mismatch is handle through the appearance of crystallographic defects (namely dislocations), which will be confined through the incorporation of a graded buffer layer. The resulting surface will have, on the one hand a good structural quality; and on the other hand the desired lattice parameter. Different research groups have been working in the last years in a structure similar to the one here described, being most of their efforts directed towards the optimization of the heteroepitaxial growth of III-V compounds on Si, with the primary goal of minimizing the appearance of crystal defects. However, none of these groups has paid much attention to the development and optimization of the bottom silicon cell, which, indeed, will play an important role on the overall solar cell performance. In this respect, the idea of this thesis is to complete the work done so far in this field by focusing on the design and optimization of the bottom silicon cell, to harness its efficiency. This work is divided into six chapters, organized according to the natural progress of the bottom cell development. After a brief introduction to the growth of III-V semiconductors on Si substrates, pointing out the different alternatives for their integration; we move to the experimental part, which is initiated by an extensive description and characterization of silicon substrates -the base of the III-V structure-. In this chapter, a comprehensive analysis of the different treatments (chemical and thermal) required for preparing silicon surfaces for subsequent epitaxial growth is presented. Next step on the development of the bottom cell is the formation of the p-n junction itself, which is faced in Chapter 3. Firstly, the optimization of the emitter configuration (in terms of doping and thickness) is handling by analytic models. This study includes a comparison between the different alternatives for the emitter formation, evaluating the advantages and disadvantages of each approach. After the theoretical design of the emitter, it is defined (through the modeling of the P-in-Si diffusion process) a practical parameter space for the experimental implementation of this emitter configuration. The characterization of these emitters through different analytical tools (i.e. ECV or SIMS) will validate and provide experimental support for the theoretical models. A side effect of the formation of the emitter by P diffusion is the roughening of the Si surface. Accordingly, once the p-n junction is formed, it is necessary to ensure that the Si surface is smooth enough and clean for subsequent phases. Indeed, the roughness of the Si must be carefully controlled since it will be the basis for the epitaxial growth. Accordingly, after quantifying (experimentally and by theoretical models) the impact of the phosphorus on the silicon surface morphology, different alternatives for the recovery of the surface are proposed in order to achieve a sub-nanometer roughness which does not endanger the quality of the incoming III-V layers. Moving a step further in the development of the Ill-V/Si structure implies to address the challenges associated to the GaP on Si nucleation. On the one hand, this layer will provide surface passivation to the emitter. In this sense, the growth of the III-V layer must be homogeneous and continuous so the Si emitter gets fully passivated, providing a minimal surface recombination velocity at the interface. On the other hand, the growth should be such that the appearance of typical defects related to the growth of a polar layer on a non-polar substrate is minimized. Chapter 5 includes an exhaustive study of the GaP on Si nucleation process, exploring different nucleation routines for achieving a high morphological and structural quality, which will be characterized by means of different microscopy techniques. Finally, an extensive study of the photovoltaic properties of the bottom cell and its evolution during key phases in the fabrication of a MOCVD-grown III-V-on-Si epitaxial structure (i.e. the formation of the bottom cell; and the growth of III-V layers) will be presented in the last part of this thesis. This study was conducted in collaboration with The Ohio State University, who has extensive experience in the growth of III-V materials on silicon. This thesis concludes by highlighting the overall conclusions of the presented work and proposing different lines of work to be undertaken in the future.

Produção de biomassa e eficiência no uso da água para oito variedades de cana-de-açúcar irrigadas por gotejamento em dois ciclos de cultivo

A irrigação quando bem manejada, pode minimizar os riscos econômicos da atividade sucroalcooleira, particularmente em safras com presença de instabilidade climática onde a restrição hídrica, promovida pela diminuição no volume de chuvas, pode reduzir a produtividade dos canaviais. Dentre as ferramentas disponíveis para a gestão eficiente da água na agricultura irrigada, a técnica de irrigação sob déficit pode se tornar uma escolha acertada para a cana-de-açúcar, desde que sejam identificadas as fases fenológicas e épocas de cultivo onde a limitação da oferta de água não implique em reduções antieconômicas no rendimento da cultura. Diante disso, a hipótese que norteia essa pesquisa, é a de que existe uma estratégia de irrigação sob déficit, que associada a uma variedade com características específicas, possibilite a expressão de indicadores de produtividade tão satisfatórios quanto os obtidos em condições de irrigação plena. Nessa linha, os objetivos da pesquisa envolveram o estudo da dinâmica foliar, acúmulo e particionamento de biomassa e ainda, índices de produtividade da água para biomassa, açúcar e etanol de 1ª e 2ª geração de oito variedade de cana-de-açúcar, submetidas a diferentes condições de disponibilidade hídrica no solo em dois ciclos de cultivo (cana-planta e cana-soca). A pesquisa foi realizada na Escola Superior de Agricultura \"Luiz de Queiroz\", em Piracicaba/SP, onde foram estudados os dois primeiros ciclos de cultivo da cana-de-açúcar, sendo estes abordados nesta tese como Experimento 1 (cana-planta) e Experimento 2 (cana-soca). O delineamento experimental adotado para ambos os ciclos foi o de blocos casualizados, com três blocos completos. Os tratamentos foram compostos por três fatores em esquema de parcelas sub-subdivididas. Estas parcelas foram formadas por duas plantas (touceiras) alocadas em um vaso com aproximadamente 330 litros de solo. No Experimento 1, foram estudados três fatores, sendo o primeiro e segundo com quatro níveis e o terceiro com oito (4x4x8), totalizando assim 128 tratamentos, sendo eles: quatro níveis de irrigação ao longo do ciclo (125, 100, 75 e 50% da ETc); oito variedades comerciais de cana-de-açúcar e quatro procedimentos de maturação, impostos por meio de variações na intensidade do déficit hídrico aplicado. Para o Experimento 2, substitui-se o fator Maturação por Épocas de Corte, o qual consistiu em colheitas de um quarto do experimento a cada 90 dias. Os resultados encontrados apontaram que a área foliar responde positivamente a maior disponibilidade hídrica no solo, tendo sido verificado uma relação proporcional entre estes. Quanto ao acúmulo de biomassa, verificou-se que para as oito variedades estudadas houve incremento de biomassa a medida em que se aumentou o volume de água disponibilizado às variedades. No tocante ao particionamento, as folhas foram os drenos principais de fotoassimilados da planta até os 100 dias de cultivo, sendo que após este período, os colmos ocuparam o lugar de dreno preferencial. Os indicadores de produtividade da água apresentaram diferenças significativas para o fator lâmina, o que indica a existência de cultivares de cana-de-açúcar mais eficientes no uso da água. Por fim, observou-se que a produtividade da água para etanol total apresentou valores expressivos, com média para essa variável igual a 1,81 L m-3, o que denota o potencial de rendimento de etanol (1G + 2G) a partir da cana-de-açúcar quando é adotado o aproveitamento integral das plantas.

Chiral gold(I) vs chiral silver complexes as catalysts for the enantioselective synthesis of the second generation GSK-hepatitis C virus inhibitor

The synthesis of a GSK 2nd generation inhibitor of the hepatitis C virus, by enantioselective 1,3-dipolar cycloaddition between a leucine derived iminoester and tert-butyl acrylate, was studied. The comparison between silver(I) and gold(I) catalysts in this reaction was established by working with chiral phosphoramidites or with chiral BINAP. The best reaction conditions were used for the total synthesis of the hepatitis C virus inhibitor by a four step procedure affording this product in 99% ee and in 63% overall yield. The origin of the enantioselectivity of the chiral gold(I) catalyst was justified according to DFT calculations, the stabilizing coulombic interaction between the nitrogen atom of the thiazole moiety and one of the gold atoms being crucial.

Stratigraphic update of the Cenozoic Sub-Numidian formations of the Tunisian Tell (North Africa): Tectonic/sedimentary evolution and correlations along the Maghrebian Chain

The Sub-Numidian Tertiary stratigraphic record of the Tunisian Tell has been updated by means of 11 stratigraphic successions belonging to the Maghrebian Flysch Basin (N-African Margin) reconstructed in the Tunisian Numidian Zone and the Triassic Dome Zone. The Sub-Numidian successions studied range from the Paleocene to the Priabonian, representing a major change in the sedimentation from the latest Cretaceous onwards. The Sub-Numidian succession and the Numidian Formation are separated by an Intermediate interval located between two erosive surfaces (local paraconformities). The stratigraphic analysis has revealed diachronous contacts between distal slope to basinal sedimentary formation, allowing the identification of an Early Eocene Chouabine marker bed. The integrated biostratigraphic analysis made by means of planktonic foraminifera and calcareous nannoplankton updates the ages of the formations studied, proving younger than previously thought. The new definition of the Sub-Numidian stratigraphy enables a better correlation with equivalent successions widely outcropping along the Maghrebian, Betic, and southern Apennine Chains. The study proposes a new evolutionary tectonic/sedimentary model for this Tunisian sector of the Maghrebian Chain during the Paleogene after the Triassic–Cretaceous extensional regime. This paleogeographic reorganization is considered a consequence of the beginning of the tectonic inversion (from extensional to compressional), leading to the end of the preorogenic sedimentation. Our results suggest a non-tabular stratigraphy (marked by lateral changes of lithofacies, variable thicknesses, and the presence of diachronous boundaries) providing significant elements for a re-evaluation of active petroleum systems on the quality, volume, distribution, timing of oil generation, and on the migration and accumulation of the oil.

Electrospinning of silica sub-microtubes mats with platinum nanoparticles for NO catalytic reduction

Silica sub-microtubes loaded with platinum nanoparticles have been prepared in flexible non-woven mats using co-axial electrospinning technique. A partially gelated sol made from tetraethyl orthosilicate was used as the silica precursor, and oil was used as the sacrificial template for the hollow channel generation. Platinum has been supported on the wall of the tubes just adding the metallic precursor to the sol–gel, thus obtaining the supported catalyst by one-pot method. The silica tubes have a high aspect ratio with external/internal diameters of 400/200 nm and well-dispersed platinum nanoparticles of around 2 nm. This catalyst showed a high NO conversion with very high selectivity to N2 at mild conditions in the presence of excess oxygen when using C3H6 as reducing agent. This relevant result reveals the potential of this technique to produce nanostructured catalysts onto easy to handle conformations.

Switching and generation of ultrashort pulses using all-fibre devices

Serial and parallel interconnection of photonic devices is integral to the construction of any all-optical data processing system. This thesis presents results from a series of experiments centering on the use of the nonlinear-optical loop mirror (NOLM) switch in architectures for the manipulation and generation of ultrashort pulses. Detailed analysis of soliton switching in a single NOLM and cascade of two NOLM's is performed, centering on primary limitations to device operation, effect of cascading on amplitude response, and impact of switching on the characteristics of incident pulses. By using relatively long input pulses, device failure due to stimulated Raman generation is postponed to demonstrate multiple-peaked switching for the first time. It is found that while cascading leads to a sharpening of the overall switching characteristic, pulse spectral and temporal integrity is not significantly degraded, and emerging pulses retain their essential soliton character. In addition, by including an asymmetrically placed in-fibre Bragg reflector as a wavelength selective loss element in the basic NOLM configuration, both soliton self-switching and dual-wavelength control-pulse switching are spectrally quantised. Results are presented from a novel dual-wavelength laser configuration generating pulse trains with an ultra-low rms inter-pulse-stream timing jitter level of 630fs enabling application in ultrafast switching environments at data rates as high as 130GBits/s. In addition, the fibre NOLM is included in architectures for all-optical memory, demonstrating storage and logical inversion of a 0.5kByte random data sequence; and ultrafast phase-locking of a gain-switched distributed feedback laser at 1.062GHz, the fourteenth harmonic of the system baseband frequency. The stringent requirements for environmental robustness of these architectures highlight the primary weaknesses of the NOLM in its fibre form and recommendations to overcome its inherent drawbacks are presented.

Which is the best solar thermal collection technology for electricity generation in north-west India? Evaluation of options using the analytical hierarchy process

This study of concentrating solar thermal power generation sets out to evaluate the main existing collection technologies using the framework of the Analytical Hierarchy Process (AHP). It encompasses parabolic troughs, heliostat fields, linear Fresnel reflectors, parabolic dishes, compound parabolic concentrators and linear Fresnel lenses. These technologies are compared based on technical, economic and environmental criteria. Within these three categories, numerous sub-criteria are identified; similarly sub-alternatives are considered for each technology. A literature review, thermodynamic calculations and an expert workshop have been used to arrive at quantitative and qualitative assessments. The methodology is applied principally to a case study in Gujarat in north-west India, though case studies based on the Sahara Desert, Southern Spain and California are included for comparison. A sensitivity analysis is carried out for Gujarat. The study concludes that the linear Fresnel lens with a secondary compound parabolic collector, or the parabolic dish reflector, is the preferred technology for north-west India.

Sub-50 fs Yb-doped laser with anomalous-dispersion photonic crystal fiber

We report on the generation of 42 fs pulses at 1 µm in a completely fiber-integrated format, which are, to the best of our knowledge, the shortest from all-fiber-integrated Yb-doped fiber lasers to date. The ring fiber cavity incorporates anomalous-dispersion, solid-core photonic crystal fiber with low birefringence, which acts as a broadband, in-fiber Lyot filter to facilitate mode locking. The oscillator operates in the stretched-pulse regime under slight normal net cavity dispersion. The cavity generates 4.7 ps long pulses with a spectral bandwidth of 58.2 nm, which are dechirped to 42 fs via a grating pair compressor outside of the cavity. Relative intensity noise (RIN) of the laser is characterized, with the integrated RIN found to be 0.026% in the 3 Hz-250 kHz frequency range.

Generation of orange light from a PPKTP waveguide end-pumped by a quantum-dot tuneable laser

Here we present a compact all-room-temperature frequency-doubling scheme generating orange light, using a PPKTP waveguide and a quantum-dot external cavity diode laser (QD-ECDL). The maximum output power for the second harmonic generated light (SHG) was 1.43 mW at 613 nm, achieved for 70 mW of launched pump power at 1226 nm. This represents an important step towards a compact and wall-plug-efficient coherent orange light source, operating at room temperature.

Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

A compact all-room-temperature frequency-doubling scheme generating cw orange light with a periodically poled potassium titanyl phosphate waveguide and a quantum-dot external cavity diode laser is demonstrated. A frequency-doubled power of up to 4.3 mW at the wavelength of 612.9 nm with a conversion efficiency exceeding 10% is reported. Second harmonic wavelength tuning between 612.9 nm and 616.3 nm by changing the temperature of the crystal is also demonstrated. © Springer-Verlag 2010.

Efficient generation of orange light by frequency-doubling of a quantum-dot laser radiation in a PPKTP waveguide

Orange light with maximum conversion efficiency exceeding 10% and CW output power of 12.04 mW, 10.45 mW and 6.24 mW has been generated at 606, 608, and 611 nm, respectively, from a frequency-doubled InAs/GaAs quantum-dot external-cavity diode laser by use of a periodically-poled KTP waveguides with different cross-sectional areas. The wider waveguide with the cross-sectional area of 4×4 μm demonstrated better results in comparison with the narrower waveguides (3×5 μm and 2×6 μm) which corresponded to lower coupling efficiency. Additional tuning of second harmonic light (between 606 and 614 nm) with similar conversion efficiency was possible by changing the crystal temperature. © 2014 Copyright SPIE.

Generation of tunable visible picosecond pulses by frequency-doubling of a quantum-dot laser in a PPKTP waveguide

We demonstrate a compact all-room-temperature picosecond laser source broadly tunable in the visible spectral region between 600 nm and 627 nm. The tunable radiation is obtained by frequency-doubling of a tunable quantum-dot external-cavity mode-locked laser in a periodically-poled KTP multimode waveguide. In this case, utilization of a significant difference in the effective refractive indices of the high- and low-order modes enables to match the period of poling in a very broad wavelength range. The maximum achieved second harmonic output peak power is 3.25 mW at 613 nm for 71.43 mW of launched pump peak power at 1226 nm, resulting in conversion efficiency of 4.55%. © 2013 Copyright SPIE.

Sub-100 fs mode-locked erbium-doped fiber laser using a 45°-tilted fiber grating

We demonstrate generation of sub-100 fs pulses at 1.5 μm in a mode-locked erbium-doped fiber laser using a 45°-tilted fiber grating element. The laser features a genuine all-fiber configuration. Based on the unique polarization properties of the 45°-tilted fiber grating, we managed to produce sub-100 fs laser pulses through proper dispersion management. To the best of our knowledge, this is the shortest pulse generated from modelocked lasers with fiber gratings. The output pulse has an average power of 8 mW, with a repetition rate of 47.8 MHz and pulse energy of 1.68 nJ. The performance of laser also matches well the theoretical simulations. © 2013 Optical Society of America.

Designing liposomal adjuvants for the next generation of vaccines

Liposomes not only offer the ability to enhance drug delivery, but can effectively act as vaccine delivery systems and adjuvants. Their flexibility in size, charge, bilayer rigidity and composition allow for targeted antigen delivery via a range of administration routes. In the development of liposomal adjuvants, the type of immune response promoted has been linked to their physico-chemical characteristics, with the size and charge of the liposomal particles impacting on liposome biodistribution, exposure in the lymph nodes and recruitment of the innate immune system. The addition of immunostimulatory agents can further potentiate their immunogenic properties. Here, we outline the attributes that should be considered in the design and manufacture of liposomal adjuvants for the delivery of sub-unit and nucleic acid based vaccines.