Sn(1-x)LaxO2 thin films deposited on AISI 304 stainless steel substrates

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Translucent tin dioxide ceramics obtained by natural sintering

Dense SnO2-based ceramics (relative density >95%) have been obtained by natural sintering at a moderate temperature (less than or equal to 1300 degrees C) with the help of a small amount of manganese, Further thermal treatments above 1500 degrees C result in grain growth and transport of manganese toward the sample surface. If the ceramic is embedded inside alumina powder, the diffusion of Mn out of the sample and into alumina during such heat treatments leads to a manganese-free body (<40 ppm) which is translucent. The transmission in the visible region depends on sample thickness; 61% was achieved for a 0.05 mm thick sample.

High activity photocatalyst powder formed by three ceramic oxides

A Photocatalyst ceramic powder that presented high photoactivity based on TiO2 modified with 25% molar of SnO2 and up to 5% molar of Ag2O was obtained in the present work. The aforementioned ceramic powder was obtained using all commercial oxides as well as the oxides mixture technique. The powders were ground in high energy mill for one hour with subsequent thermal treatment at 400°C for four hours. They were, furthermore, characterized using surface area of around 6m2/g, where the X-Ray diffraction results provided evidence for the presence of anatase and rutile phases, known to be typical characteristics of both the TiO2 and SnO2 used. During the thermal treatment, Ag2O was reduced to metallic silver. The photodegradation rehearsals were carried out using a 0.01 mmol/L Rhodamine B solution in a 100mg/L photocatalyst suspension in a 500ml beaker, which was irradiated with 4W germicide Ultraviolet light of 254nm. In addition, samples were removed after duration of about 10 minutes to an hour, where they were analyzed thoroughly in UV-vis spectrophotometer. The analysis of the results indicated that for the compositions up to 2.5% molar of Ag2O, the photoactivity was found to be greater than that of Degussa P25 photocatalyst powder, and as such it was then used as a reference. Taking into account 90% degradation of Rhodamine B, a duration period of 11 minutes was obtained for the developed photocatalyst powder compared to the 38 minutes observed for the Degussa P25. FEG-SEM micrographies enabled the verification of the morphology as well as the interaction of the oxide particles with the metallic silver, which led us to propose a model for the increase in photoactivity observed in the photocatalyst powder under investigation.

Single precursor route to efficient cobalt sulphide counter electrodes for dye sensitized solar cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

Synthesis and characterization of nanostructured TiO2-SnO2 composite

Nanostructured composites based on titanium dioxide have been studied in order to improve optical and photo-catalytic properties, as well as their performance in gas sensors. In this work, titanium and tin dioxides were simultaneously synthesized by the polyol method resulting in TiO2 platelet coated with SnO2 nanoparticles as was observed by scanning electron microscopy. The thermal analysis showed that the combined synthesis promotes more easily the crystallization of the TiO2 rutile phase. The composite obtained after heat treatment at 500 °C showed to be formed of almost only rutile phases of both oxides. The optical properties analyzed by UV-Vis spectroscopy showed that the combined oxides have higher absorbance, which reinforces a model found in the literature based on the flow of photo-generated electrons to the conduction band of SnO2 delaying the recombination of charges.

Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

Desenvolvimento de sensores de gás a partir de óxido semicondutor nanoestruturado

The present work aims to study one-dimensional nanomaterials semiconductors grown via by phase systems Grande oxides Technological Interest for applications in gas sensors. The Used material was tin oxide (SnO2) for their functional properties, and the grow method was the Polymeric Precursors. The films grown were the nanomaterials about substrates of alumina, deposited via spin coating technique, followed by heat treatment at 300C for 1 hour and 650C for 2 hours. Later the films of Performance sensors (sensitivity, speed response, selectivity, and stability) will be in avaliated in a hermetic chamber with controlled atmosphere and temperature. The synthesized materials were its structural and morphological properties characterized in atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (not have this result with Me). We sought to investigate one influence of different conditions for obtaining films (Variation Layers number) in structural and microstructural properties of semiconductors oxides. The synthesis method proved very effective, generating films with micro definitely, uniformity of the nanoparticles and hum high level of porosity, what makes the material of a viable final paragraph applicability

Desenvolvimento de sensores de gás a partir de óxido semicondutor nanoestruturado

The present work aims to study one-dimensional nanomaterials semiconductors grown via by phase systems Grande oxides Technological Interest for applications in gas sensors. The Used material was tin oxide (SnO2) for their functional properties, and the grow method was the Polymeric Precursors. The films grown were the nanomaterials about substrates of alumina, deposited via spin coating technique, followed by heat treatment at 300C for 1 hour and 650C for 2 hours. Later the films of Performance sensors (sensitivity, speed response, selectivity, and stability) will be in avaliated in a hermetic chamber with controlled atmosphere and temperature. The synthesized materials were its structural and morphological properties characterized in atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (not have this result with Me). We sought to investigate one influence of different conditions for obtaining films (Variation Layers number) in structural and microstructural properties of semiconductors oxides. The synthesis method proved very effective, generating films with micro definitely, uniformity of the nanoparticles and hum high level of porosity, what makes the material of a viable final paragraph applicability

Comparative electrical behavior at low and high current of SnO(2)- and ZnO-based varistors

The complete I-V characteristics of SnO(2)-based varistors, particularly of the Pianaro system SCNCr consisting in 98.9%SnO(2)+1%CoO+0.05%Nb(2)O(5)+0.05%Cr(2)O(3), all in mol%, have been seldom reported in the literature. A comparative study at low and high currents of the nonohmic behavior of SCNCr- and ZnO-based varistors (modified Matsuoka system) is proposed in this work. The SCNCr system showed higher nonlinearity coefficients in the whole range of measured current. The electrical breakdown field (E(b)) was twice as high for the SCNCr system (5400 V/cm) than for the ZnO varistor (2600 V/cm) due to a smaller average grain size of the former (4.5 mu m) with respect to the latter (8.5 mu m). Nevertheless, we consider that another important factor responsible for the high E(b) in the SCNCr system is the great number of electrically active interfaces (85%) as determined with electrostatic force microscopy (EFM). It was also established that the SCNCr system might be produced in disks of smaller dimensions than that of commercial ZnO-based product, with a 5.0 cm(-1) minimal area-volume (A/V) ratio. The SCNCr reached the saturation current in a short time because of the high resistivity of the grains, which is five times higher than that of the grains in ZnO-based varistors.

Comparative degradation of ZnO- and SnO(2)-based polycrystalline non-ohmic devices by current pulse stress

The degradation behaviour of SnO(2)-based varistors (SCNCr) due to current pulses (8/20 mu s) is reported here for the first time in comparison with the ZnO-based commercial varistors (ZnO). Puncturing and/or cracking failures were observed in ZnO-based varistors possessing inferior thermo-mechanical properties in comparison with that found in a SCNCr system free of failures. Both systems presented electric degradation related to the increase in the leakage current and decrease in the electric breakdown field, non-linear coefficient and average value of the potential barrier height. However, it was found that a more severe degradation occurred in the ZnO-based varistors concerning their non-ohmic behaviour, while in the SCNCr system, a strong non-ohmic behaviour remained after the degradation. These results indicate that the degradation in the metal oxide varistors is controlled by a defect diffusion process whose rate depends on the mobility, the concentration of meta-stable defects and the amount of electrically active interfaces. The improved behaviour of the SCNCr system is then inferred to be associated with the higher amount of electrically active interfaces (85%) and to a higher energy necessary to activate the diffusion of the specific defects.

Investigation of a Pt3Sn/C Electro-Catalyst in a Direct Ethanol Fuel Cell Operating at Low Temperatures for Portable Applications

A 20% Pt3Sn/C catalyst was prepared by reduction with formic acid and used in a direct ethanol fuel cell at low temperatures. The electro-catalytic activity of this bimetallic catalyst was compared to that of a commercial 20% Pt/C catalyst. The PtSn catalyst showed better results in the investigated temperature range (30 degrees-70 degrees C). Generally, Sn promotes ethanol oxidation by adsorption of OH species at considerably lower potentials compared to Pt, allowing the occurrence of a bifunctional mechanism. The bimetallic catalyst was physico-chemically characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses. The presence of SnO2 in the bulk and surface of the catalyst was observed. It appears that SnO2 can enhance the ethanol electro-oxidation activity at low potentials due to the supply of oxygen-containing species for the oxidative removal of CO and CH3CO species adsorbed on adjacent Pt active sites.

PtSnIr/C Anode Electrocatalysts: Promoting Effect in Direct Ethanol Fuel Cells

This study investigates the promoting effect of PtSnIr/C (1:1:1) electrocatalyst anode, prepared by polymeric precursor method, on the ethanol oxidation reaction in a direct ethanol fuel cell (DEFC). All of the materials used were 20% metal m/m on carbon. X-ray photoelectron spectroscopy (XPS) analysis showed the presence of Pt, PtOH2, PtO2, SnO2 and IrO2 at the electrocatalyst surface, indicating a possible decorated particle structure. X-ray diffractometry (XRD) analysis indicated metallic Pt and Ir as well as the formation of an alloy with Sn. Using the PtSnIr/C electrocatalyst prepared here with two times lower loading of Pt than PtSn/C E-tek electrocatalyst, it was possible to obtain the same maximum power density found for the commercial material. The main reaction product was acetic acid probably due to the presence of oxides, in this point the bifunctional mechanism is predominant, but an electronic effect should not be discarded.

The Structural and Electronic Properties of Tin Oxide Nanowires: An Ab Initio Investigation

We performed an ab initio investigation on the properties of rutile tin oxide (SnOx) nanowires. We computed the wire properties determining the equilibrium geometries, binding energies, and electronic band structures for several wire dimensions and surface facet configurations. The results allowed us to establish scaling laws for the structural properties, in terms of the nanowire perimeters. The results also showed that the surface states control most of the electronic properties of the nanowires. Oxygen incorporation in the nanowire surfaces passivated the surface-related electronic states, and the resulting quantum properties and scaling laws were fully consistent with electrons confined inside the nanowire. Additionally, oxygen incorporation in the wire surfaces generated an unbalanced concentration of spin up and down electrons, leading to magnetic states for the nanowires.