929 resultados para SEMICONDUCTOR COMPOUND-CRYSTALS


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Peumus boldus Molina (Monimiaceae) é uma árvore comum e abundante no Chile, e suas folhas são amplamente empregadas pela medicina tradicional para o tratamento de uma variedade de afecções do sistema digestivo e hepatobiliar. Seus principais constituintes químicos são alcalóides do tipo aporfínicos, sendo a boldina seu maior e mais característico representante, cujas propriedades antioxidantes são extensivamente relatadas na literatura, servindo desta forma como marcador químico para a espécie. Com o objetivo de contribuir com parâmetros de controle de qualidade, um estudo botânico macro e microscópico das folhas e do pó da espécie foi realizado. Características morfológicas, identificadas pela análise macroscópica, como pilosidade, tipologia dos tricomas, proeminência ao redor da base dos tricomas e aparência do bordo, e características microscópicas como estômatos anomocíticos, folha hipoestomática e ocorrência de cristais de oxalato de cálcio denotam valor taxonômico. Parâmetros farmacopéicos como cinzas totais e perda por dessecação foram determinados, e um método de quantificação da boldina foi desenvolvido e validado utilizando a CLAE. O limite mínimo de boldina observado na análise de 10 amostras adquiridas foi de aproximadamente 0,016%. A fim de avaliarse o comportamento de seus constituintes químicos frente a variações de temperatura e umidade, realizou-se estudo de estabilidade acelerada (40ºC ± 2ºC / 75% ± 5% U.R.). A degradação máxima de boldina foi observada após 90 dias em câmara climática chegando a aproximadamente 52%. A reação de degradação sugerida foi de segunda ordem, e o tempo de vida útil e meia-vida calculados foram de aproximadamente 18 dias e 165 dias, respectivamente. Por fim, realizou-se a quantificação de alguns metais pesados nas folhas da espécie, que decresceram na ordem de Fe> Mn> Cu> Ni, sendo que Pb, Cr e Co tiveram níveis abaixo do limite de detecção de 5 μg/g.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.

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Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Thermoelectric Refrigerators (TEC Thermoelectric Cooling) are solid-state heat pumps used in applications where stabilization of temperature cycles or cooling below the room temperature are required. TEC are based on thermoelectric devices, and these in turn, are based on the Peltier effect, which is the production of a difference in temperature when an electric current is applied to a junction formed by two non-similar materials. This is one of the three thermoelectric effects and is a typical semiconductor junction phenomenon. The thermoelectric efficiency, known as Z thermoelectric or merit figure is a parameter that measures the quality of a thermoelectric device. It depends directly on electrical conductivity and inversely on the thermal conductivity. Therefore, good thermoelectric devices have typically high values of electrical conductivity and low values of thermal conductivity. One of the most common materials in the composition of thermoelectric devices is the semiconductor bismuth telluride (Bi2Te3) and its alloys. Peltier plates made up by crystals of semiconductor P-type and N-type are commercially available for various applications in thermoelectric systems. In this work, we characterize the electrical properties of bismuth telluride through conductivity/resistivity of the material, and X-rays power diffraction and magnetoresistance measurements. The results were compared with values taken from specific literature. Moreover, two techniques of material preparation, and applications in refrigerators, are discussed

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In this work, we have studied the acoustic phonon wave propagation within the periodic and quasiperiodic superlattices of Fibonacci type. These structures are formed by phononic crystals, whose periodicity allows the raise of regions known as stop bands, which prevent the phonon propagation throughout the structure for specific frequency values. This phenomenon allows the construction of acoustic filters with great technological potential. Our theoretical model were based on the method of the transfer matrix, thery acoustics phonons which describes the propagation of the transverse and longitudinal modes within a unit cell, linking them with the precedent cell in the multilayer structure. The transfer matrix is built taking into account the elastic and electromagnetic boundary conditions in the superllatice interfaces, and it is related to the coupled differential equation solutions (elastic and electromagnetic) that describe each model under consideration. We investigated the piezoelectric properties of GaN and AlN the nitride semiconductors, whose properties are important to applications in the semiconductor device industry. The calculations that characterize the piezoelectric system, depend strongly on the cubic (zinc-bend) and hexagonal (wurtzite) crystal symmetries, that are described the elastic and piezoelectric tensors. The investigation of the liquid Hg (mercury), Ga (gallium) and Ar (argon) systems in static conditions also using the classical theory of elasticity. Together with the Euler s equation of fluid mechanics they one solved to the solid/liquid and the liquid/liquid interfaces to obtain and discuss several interesting physical results. In particular, the acoustical filters obtained from these structures are again presented and their features discussed

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A joint use of experimental and theoretical techniques allows us to understand the key role of intermediate- and short-range defects in the structural and electronic properties of ZnO single crystals obtained by means of both conventional hydrothermal and microwave-hydrothermal synthesis methods. X-ray diffraction, Raman spectra, photoluminescence, scanning electronic and transmission electron microscopies were used to characterize the thermal properties, crystalline and optical features of the obtained nano and microwires ZnO structures. In addition, these properties were further investigated by means of two periodic models, crystalline and disordered ZnO wurtzite structure, and first principles calculations based on density functional theory at the B3LYP level. The theoretical results indicate that the key factor controlling the electronic behavior can be associated with a symmetry breaking process, creating localized electronic levels above the valence band.