Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.

The effects of a second tunnel on the propagation of ground-borne vibration from an underground railway

Accurate predictions of ground-borne vibration levels in the vicinity of an underground railway are greatly sought in modern urban centers. Yet the complexity involved in simulating the underground environment means that it is necessary to make simplifying assumptions about this environment. One such commonly-made assumption is to model the railway as a single tunnel, despite many underground railway lines consisting of twin-bored tunnels. A unique model for two tunnels embedded in a homogeneous, elastic full space is developed. The vibration response of this two-tunnel system is calculated using the superposition of two displacement fields: one resulting from the forces acting on the invert of a single tunnel, and the other resulting from the interaction between the tunnels. By partitioning of the stresses into symmetric and anti-symmetric mode number components using Fourier decomposition, these two displacement fields can by calculated with minimal computational requirements. The significance of the interactions between twin-tunnels is quantified by calculating the insertion gains that result from the existence of a second tunnel. The insertion-gain results are shown to be localized and highly dependent on frequency, tunnel orientation and tunnel thickness. At some locations, the magnitude of these insertion gains is greater than 20dB. This demonstrates that a high degree of inaccuracy exists in any surface vibration-prediction model that includes only one of the two tunnels. © 2012 Springer.

Plastic deformation of metals and alloys

This chapter focuses on relationships between plastic deformation structures and mechanical properties in metals and alloys deforming by dislocation glide. We start by summarizing plastic deformation processes, then look at the fundamental mechanisms of plastic deformation and explore how deformation structures evolve. We then turn to experimental techniques for characterization which have allowed deformation microstructures to be quantified in terms of common structural parameters. The microstructural evolution has been described over many length scales and analyzed theoretically based on general principles. The deformation microstructures are related to work hardening stages. Finally we identify correlations between a wide range of microstructural features and mechanical properties, particularly flow stress, and use experimental observations to illustrate their inter-relationships.

Solid-state memories based on ferroelectric tunnel junctions

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10 6 A cm -2). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10 4A cm -2 at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism. © 2012 Macmillan Publishers Limited. All rights reserved.

Dynamic centrifuge tests on shallow tunnel models in dry sand

In the framework of the Italian research project ReLUIS-DPC, a set of centrifuge tests were carried out at the Schofield Centre in Cambridge (UK) to investigate the seismic behaviour of tunnels. Four samples of dry sand were prepared at different densities, in which a small scale model of circular tunnel was inserted, instrumented with gauges measuring hoop and bending strains. Arrays of accelerometers in the soil and on the box allowed the amplification of ground motion to be evaluated; LVDTs measured the soil surface settlement. This paper describes the main results of this research, showing among others the evolution of the internal forces during the model earthquakes at significant locations along the tunnel lining. © 2010 Taylor & Francis Group, London.