PBT和PBS及其共混物结晶行为和力学性能的研究

聚对苯二甲酸丁二醇酯(PBT)是一种多用途的工程塑料。本文中，主要研究了PBT/Epoxy(E)合金及PBT/ABS-g-GMA/E合金的结晶行为和力学性能。 使用示差扫描量热法对PBT/Epoxy合金的等温结晶过程进行了研究。发现PBT和E03 609环氧树脂在所研究的组成范围内完全相容。环氧树脂起到异相成核剂的作用，使PBT产生更强的瞬间结晶三维生长趋势。PBT和环氧树脂的Flory相互作用参数为负值，说明PBT和环氧树脂形成了热力学上的稳定混合物。 使用几种方法对PBT/Epoxy合金的非等温结晶过程进行了研究，Ozawa方程不能充分描述PBT/Epoxy合金的非等温结晶过程；使用莫志深等人提出的方法，成功地描述了该过程。实验结果显示1％环氧树脂可使PBT/Epoxy合金结晶速率明显增加。 对PBT/Epoxy合金的热和力学性能进行了研究。1％环氧树脂的加入提高PBT/Epoxy合金的缺口冲击强度20%；从红外光谱分析，环氧树脂与PBT发生了相互作用；环氧树脂影响了PBT/Epoxy合金的力学性质和结晶行为。 采用乳液聚合技术将甲基丙烯酸环氧丙酯(GMA)引入到ABS的壳层，合成了环氧官能化的ABS共聚物(ABS-g-GMA)，将环氧树脂加入到PBT/ABS-g-GMA合金中，利用环氧官能团与PBT端羧基/羟基的反应达到增容PBT/ABS合金的目的。当环氧树脂的含量为5％时，PBT/ABS-g-GMA/E共混物比PBT/ABS-g-GMA共混物有更优异的力学性质。 研究了聚亚丙基碳酸酯(PPC)和聚丁二酸二甲酯(PBS)共混物的相容性、结晶和力学性能。结果显示组份PPC/PBS（90/10）可能产生部分相容。采用偏光显微镜观察了PPC/PBS共混物的形态，对于90/10 PPC/PBS共混物，发现很大数量的PBS小球晶分散在PPC基质中。力学结果显示90/10 PPC/PBS共混物拉伸强度比纯PPC提高了30％，冲击强度提高了11％。

New observation on the formation of PbS clusters in zeolite-Y

PbS clusters in zeolite-Y have been prepared with the reaction of Pb2+-ion-exchanged zeolite-Y with Na2S in solution at room temperature. Their absorption spectra show dramatic blue shifts from that of the bulk PbS. Obvious change of both the absorption edges and peak positions upon PbS concentrations have been observed. These phenomena provide evidences that PbS clusters have been formed within the zeolite. The absorption spectra show featureless structure and have no tails near the absorption edges. As the PbS loading density becomes higher, the absorption bands become stronger and sharpen. Order PbS clusters lattice with high quality might be formed in the supercages of zeolite-Y. (C) 1996 American Institute of Physics.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.