Photostimulated luminescence of silver clusters in zeolite-Y

Upon UV-irradiation at 254 nm, the photoluminescence of silver atoms in zeolite-Y decreases, meanwhile an absorption band shows up around 840 nm. By photostimulation at 840 nm, fluorescence of silver atoms is detected, which is called photostimulated luminescence, and the photoluminescence of silver atoms is increased slightly. These phenomena are attributed to the charge-transfer interaction between the zeolite framework and the entrapped silver atoms. (C) 1997 Published by Elsevier Science B.V.

Luminescence spectroscopy of ion implanted AlN bulk single crystal

High concentrations of Si and Zn were implanted into (0001) AlN bulk crystal grown by the self-seeded physical vapor transport (PVT) method. Cathode luminescence (CL) and photoluminescence (PL) spectroscopy were used to investigate the defects and properties of the implanted AlN. PL spectra of the implanted AlN are dominated by a broad near-band luminescence peak between 200 and 254 nm. After high temperature annealing, implantation induced lattice damages are recovered and the PL intensity increases significantly, suggesting that the implanted impurity Si and Zn occupy lattice site of Al. CL results imply that a 457 nm peak is Al vacancy related. Resistance of the AlN samples is still very high after annealing, indicating a low electrical activation efficiency of the impurity in AlN single crystal.

利用光自注入改善DFB激光器的频率响应

介绍了一种简单有效的自注入方法，通过该方法对直接调制的分布反馈半导体激光器进行光自注入，可以得到非常平坦的频率响应曲线．实验中使用一个环形器和一个1×2耦合器来实现光自注入，实验结果表明，在不同的偏置电流下，适当改变自注入光的偏振状态，频率响应曲线的张弛振荡峰可以得到很好地抑制。

Design,Fabrication,and Testing of Single-Side Alignment of 16×0.8nm Arrayed-Waveguide Grating

A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device's size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip's fabrication cost.

从OFC2004看全光网中关键光器件的新发展

概述了在OFC 2004会议上报道的几种支撑光网络发展的关键器件的最新进展,包括滤波器、光开关、可变光衰减器(VOA)、全光波长转换器(AOWC)及波长选择开关(WSS)等.介绍了这些新型器件的工作原理和结构.

Si（5,5,12）-一个大元胞的稳定表面

于2010-11-23批量导入

InAs/InP（0.7）Sb（0.3）热电子晶体管的fT及f（max）

于2010-11-23批量导入

MMI optical couplers and switches with SOI technology

MMI (multimode interference) coupler, modulator and switch based on SOI (silicon- on-insulator) have been become more and more attractive in optical systems since they show important performances. SiO2 thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. The design and fabrication of multimode interference (MMI) optical coupler, modulator and switche in SOI technology are presented in the paper. The results demonstrated that the modulator has an extinction ratio of -11.0dB and excess loss of -2.5dB, while the optical switch has a crosstalk of -12.5dB and responding time of less than 20 mus.