Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.

Effects of Organic-Rich Sediment and Below-Ground Sulfide Exposure on Submerged Macrophyte, Hydrilla verticillata

The effects of organic-rich sediment and sulfide exposure on Hydrilla verticillata were investigated. The organic richness of sediment was simulated by adding sucrose into sediments, and sulfide exposure was conducted by adding sodium sulfide to plant roots. The length, biomass and density of shoot reduced in the sucrose-amended sediments, and the largest reduction occurred in the highest 1.0% addition treatment by 84.2%, 56.7% and 92.4%, respectively. However, the 0.1% addition treatment stimulated the growth of root. The effects of below-ground sulfide exposure on the physiological activities of H. verticillata were determined by adding sulfide to the below-ground tissue. Significantly inhibitory effects of sulfide were observed on plant photosynthesis, root carbohydrate and nitrogen synthetic reserves. The net photosynthetic rates, soluble carbohydrate and soluble protein contents in root were reduced by 104%, 71.8% and 49.8%, respectively, in the 0.6 mM sulfide treatment.

Carbon and nitrogen metabolism of an eutrophication tolerative macrophyte, Potamogeton crispus, under NH4+ stress and low light availability

Submersed macrophytes in eutrophic lakes often experience high NH4+ concentration and low light availability in the water column. This study found that an NH4+-N concentration of 1 mgL(-1) in the water column apparently caused physiological stress on the macrophyte Potamogeton crispus; L The plants accumulated free amino acids (FAA) and lost soluble carbohydrates (SC) under NH4+ stress. These stressful effects of NH4+ were exacerbated under low light availability. Shading significantly increased NH4+ and FAA contents and dramatically decreased SC and starch contents in the plant shoots. At an NH4+-N concentration of 1 mg L-1 in the water column, neither growth inhibition nor NH4+ accumulation was observed in the plant tissues of P. crispus under normal light availability. The results showed that 1 mg L-1 NH4+-N in the water column was not toxic to P. crispus in a short term. To avoid NH4+ toxicity. active NH4+ transportation out of the cell may cost energy and thus result in a decline of carbohydrate. When NH4+ inescapably accumulates in the plant cell, i.e. under NH4+ Stress and shading, NH4+ is scavenged by FAA synthesis. (c) 2009 Published by Elsevier B.V.

A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor

The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm 2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4°C in air, 565.9°C in N2, 592.5°C for 1 % H2 in Ar and 599.5°C in Ar. © 2013 IEEE.

Genetic structure and low-genetic diversity suggesting the necessity for conservation of the Chinese Longsnout catfish, Leiocassis longirostris (Pisces : Bagriidae)

Genetic variation and phylogenetic relationship of Leiocassis longirostris populations from the Yangtze River were investigated at mitochondrial DNA level. The samples were collected from the upstream and mid-downstream of the Yangtze River. Three mitochondrial DNA fragments, ND5/6, cytochrome b (Cyt b) and control region (D-loop), were amplified and then digested by 10 restriction endonucleases. Twenty-three D-loop fragments randomly selected were sequenced. Digestion patterns of ND5/6 by AluI and HaeIII, D-loop by HinfI and RsaI, and Cyt b by HaeIII were polymorphic. Ten and eighteen haplotypes were obtained from RFLP data and sequence data, respectively. The individuals from upstream and mid-downstream of the Yangtze River were apparently divided into two groups. The average genetic distance was 0.008 and 0.010 according to the two data. Low diversities and decreasing abundance indicated that Leiocassis longirostris may be in severe danger and reasonable measures of fishery management should be taken.

Low loss and low crosstalk multimode polymer waveguide crossings for high-speed optical interconnects

Multimode polymer waveguide crossings exhibiting the lowest reported excess loss of 0.006dB/crossing and crosstalk values as low as -30dB are presented. Their potential for use in high-speed dense optical interconnection architectures is demonstrated. © 2007 Optical Society of America.

Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires

This letter reports on the Raman, optical and magnetic properties of FeNi co-doped ZnO nanowires prepared via a soft chemical solution method. The microstructural investigations show that the NiFe co-dopants are substituted into wurtzite ZnO nanostructure without forming any secondary phase. The co-doped nanowires show a remarkable reduction of 34 nm (267.9 meV) in the optical band gap, while suppression in the deep-level defect transition in visible luminescence. Furthermore, these nanowires exhibit ferromagnetism and an interesting low-temperature spin glass behavior, which may arise due to the presence of disorder and strong interactions of frustrated spin moments of Ni and Fe co-dopants on the ZnO lattice sites. Copyright (C) EPLA, 2009

Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs

We have fabricated a set of samples of zincblende Mn-rich Mn(Ga)As clusters embedded in GaAs matrices by annealing (Ga,Mn)As films with different nominal Mn content at 650 degrees C. For the samples with Mn content no more than 4.5%, the Curie temperature reaches nearly 360 K. However, when Mn content is higher than 5.4%, the samples exhibit a spin-glass-like behavior. We suggest that these different magnetic properties are caused by the competing result of dipolar and Ruderman-Kittel-Kasuya-Yosida interaction among clusters. The low-temperature spin dynamic behavior, especially the relaxation effect, shows the extreme creeping effect which is reflected by the time constant tau of similar to 10(11) s at 10 K. We explain this phenomenon by the hierarchical model based on the mean-field approach. We also explain the memory effect by the relationship between the correlation function and the susceptibility.

Photon-assisted Fano resonance and corresponding shot noise in a quantum dot

We have studied the Fano resonance in photon-assisted transport through a quantum dot. Both the coherent current and the spectral density of shot noise have been calculated. It is predicted that the shape of the Fano profile will also appear in satellite peaks. It is found that the variations of Fano profiles with the strengths of nonresonant transmissions are not synchronous in absorption and emission sidebands. The effect of interference on photon-assisted pumped current has also been investigated. We further predict the current and spectral density of shot noise as a periodic function of the phase, which exhibits an intrinsic property of resonant and nonresonant channels in the structures.

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Passivation and low temperature method was carried out to grow InGaN/GaN quantum dots (QDs). Atomic force microscope observations were performed to investigate the evolution of the surface morphology of the InGaN QDs superlattices with increasing the superlattices layer number. The result shows that the size of the QDs increases with increasing superlattices layer number. The QDs height and diameter increase from 18 and 50 run for the monolayer InGaN QDs to 37 and 80 urn for the four-stacked InGaN QDs layers, respectively. This result is considered to be due to the stress field from the sub-layer dots. (C) 2003 Elsevier Science B.V. All rights reserved.

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

A specially designed quantum well laser for achieving extremely low vertical beam divergence was reported and theoretically investigated. The laser structure was characterized by two low index layers inserted between the waveguide layers and the cladding layers. The additional layers were intended to achieve wide optical spread in the cladding layers and strong confinement in the active region. This enabled significant reduction of beam divergence with no sacrifice in threshold current density. The numerical results showed that lasers with extremely low vertical beam divergence from 20 degrees down to 11 degrees and threshold current density of less than 131 A/cm(2) can be easily achieved by optimization of the structure parameters. Influences of individual key structure parameters on beam divergence and threshold current density are analyzed. Attention is also paid to the minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal loss. The near and far field patterns are given and discussed. (C) 1998 American Institute of Physics.