Synthesis of zero valent iron nanoparticles and application to removal of arsenic(III) and arsenic(V) from water

Recently nano scale zero valent iron particles (nZVI) have been considered as smart adsorbent for environmental and groundwater remediation. Although several synthetic methods are available for the preparation of nZVI, air stable nZVI are not available for remediation works. Further, challenges demand synthesis of nZVI without stabilizers and capping agents. A modified methodology for the synthesis of air stable nZVI has been developed without any capping agents and characterized by powder X-Ray Diffraction (XRD), Scanning Electron Microscopy Energy-dispersive X-Ray (SEM-EDS), Transmission Electron Microscopy (TEM) and X-Ray Photoelectron Spectroscopy (XPS). The results of the present study suggest that the synthetic nZVI are air-stable over a period of one year and consists of particles of 30-40 nm in diameter. Although a layer of less than 3 am thick oxide/hydroxide is observed by TEM and XPS, it appears to be due to oxidation of outer surface during analysis. Adsorption study has shown that the synthetic nZVI are more effective adsorbent than the commercial nZVI and can remove simultaneously arsenite As-III] and arsenate As-V] from water without prior reduction of As-V to As-III. The removal process is adsorptive rather than precipitative and the removal of As-III is greater than that of As-V.

P.v.b. virgillii maronis : bucolicorum, eclogaex., georgicorum, libri iii., aeneidos, libri xii. et in ea, mauri servii honorati : grammatici comentarii, ex antiquiss : exemplaribus longe meliores et auctiores : ex bibliotheca petri danielis i.c. : accessit fabij planciadis fulgentij liber de continentia virgiliana, auctior e mss. codd. item iunij philargyrij commentariolus in bucolica & georgica virgilij. : cum certissimo et copiosissimo indice

As Bucólicas são constituídas de dez éclogas, consideradas como traduzidas ou imitadas de Teócrito. As Geórgias são um poema didático no qual se acentua a predileção de Virgílio pela vida campestre. A Eneida é uma utopia política que o poeta não conseguiu acabar e foi publicada contra a sua vontade expressa.

Taller Integrado 3A (Proyectos V, Construcción I y Urbanismo III)

Nivel educativo: Grado. Duración (en horas): Más de 50 horas

Nous sommes tousjours au dela : a negação narrative do sujeito modern em Sur des vers de Virgile (ensaios III, cap.V) de Michel de Motaigne

Investigando a apresentação das ideias em Sobre versos de Virgílio, a tese demonstra como sua estruturação ambígua, onde tudo é constantemente negado por seus contrários, leva a um contínuo estado de confusão e perplexidade, tornando impossível a determinação lógica dos conceitos e conduzindo a um progressivo esvaziamento do texto enquanto signo direto do pensamento do autor. Por outro lado, partindo de uma perspectiva hermenêutica influenciada pela anatomia, a análise mostra que o uso sistemático e criativo das instâncias narrativas (autor, narrador, signatário), juntamente com a reunificação textual de diferentes Montaignes (presentes nos diversos estágio editoriais do ensaio), acaba por dissolver a própria noção de identidade a si do autor, tendo por consequência imediata sua disseminação em vários sujeitos diversos e contraditórios e, por fim, colocando em xeque a clássica percepção dos Ensaios com o nascimento da subjetividade moderna.

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices. © 2010 IEEE.

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study. © 2010 IOP Publishing Ltd.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550degreesC. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0 x 10(18) to 5.8 x 10(18) cm(-3), and the lattice mismatch of InGaAs to InP was observed to vary from -5.70 x10(-4) to 1.49 x 10(-3). In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2 x 10(18) to 1.3 x 10(19) cm(-3). The change of AsH3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature. (C) 2003 Elsevier B.V. All rights reserved.

Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants

Using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-III and group-V impurities doped in H passivated Si quantum dots (QDs) as functions of the QD size. The general chemical trends found in the QDs are similar to that found in bulk Si. We show that defect formation energy and transition energy level increase when the size of the QD decreases; thus, doping in small Si QDs becomes more difficult. B-Si has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the H passivated Si QD. On the other hand, P-Si has the smallest donor ionization energy, and it prefers to stay at the interior of the H passivated Si QD. We explained the general chemical trends and the dependence on the QD size in terms of the atomic chemical potentials and quantum confinement effects.

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

Hydrothermal synthesis and structure of a bi-capped Keggin polyoxoanion, [(As2AsMo8V4O40)-As-III-Mo-V-O-IV](5-)

The title compound, [NH3CH2CH2CH2NH2][NH3CH2CH2CH2NH3](2)[As-2(III) As-v Mo-8 V-4(IV) O-40] (.) 5H(2)O, was hydrothermally synthesized and structurally characterized by single crystal X-ray diffraction. Crystal data: monoclinic, C2/c, a = 45.375(9) Angstrom, b = 11.774(2) Angstrom, c = 23.438(5) Angstrom, beta = 96.62(3)degrees. X-ray crystallographic study showed that the crystal structure was constructed by bi-capped alpha -Keggin fragments [(As2AsMo8V4O40)-As-III-Mo-v-O-IV](5-) polyoxoanion. (C) 2001 Elsevier Science B.V. All rights reserved.