983 resultados para Hall, Charles Francis, 1821-1871.


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This paper reports on our study of the edge of the 2/5 fractional quantum Hall state, which is more complicated than the edge of the 1/3 state because of the presence of edge sectors corresponding to different partitions of composite fermions in the lowest two Lambda levels. The addition of an electron at the edge is a nonperturbative process and it is not a priori obvious in what manner the added electron distributes itself over these sectors. We show, from a microscopic calculation, that when an electron is added at the edge of the ground state in the [N(1), N(2)] sector, where N(1) and N(2) are the numbers of composite fermions in the lowest two Lambda levels, the resulting state lies in either [N(1) + 1, N(2)] or [N(1), N(2) + 1] sectors; adding an electron at the edge is thus equivalent to adding a composite fermion at the edge. The coupling to other sectors of the form [N(1) + 1 + k, N(2) - k], k integer, is negligible in the asymptotically low-energy limit. This study also allows a detailed comparison with the two-boson model of the 2/5 edge. We compute the spectral weights and find that while the individual spectral weights are complicated and nonuniversal, their sum is consistent with an effective two-boson description of the 2/5 edge.

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Taking polycrystalline cadmium as an example and by utilizing the predicted temperature or strain rate-dependence of the (Hall-Petch) stress-grain size parameters, a reasonably quantitative explanation is given for the grain size dependence of apparent activation volume measurements. The explanation involves the theoretical relation of these measurements to single-crystal measurements.

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We show that a shell-model version of the three-dimensional Hall-magnetohydrodynamic (3D Hall-MHD) equations provides a natural theoretical model for investigating the multiscaling behaviors of velocity and magnetic structure functions. We carry out extensive numerical studies of this shell model, obtain the scaling exponents for its structure functions, in both the low-k and high-k power-law ranges of three-dimensional Hall-magnetohydrodynamic, and find that the extended-self-similarity procedure is helpful in extracting the multiscaling nature of structure functions in the high-k regime, which otherwise appears to display simple scaling. Our results shed light on intriguing solar-wind measurements.

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Closed loop current sensors used in power electronics applications are expected to have high bandwidth and minimal measurement transients. In this paper, a closed loop compensated Hall-effect current sensor is modeled. The model is used to tune the sensor's compensator. Analytical expression of step response is used to evaluate the performance of the PI compensator in the current sensor. This analysis is used to devise a procedure to design parameters of the PI compensator for fast dynamic response and for small dynamic error. A prototype current sensor is built in the laboratory. Simulations using the model are compared with experimental results to validate the model and to study the variation in performance with compensator parameters. The performance of the designed PI compensator for the sensor is compared with a commercial current sensor. The measured bandwidth of the designed current sensor is above 200 kHz, which is comparable to commercial standards. Implementation issues of PI compensator using operational amplifiers are also addressed.

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A method to estimate the Hall-Petch coefficient k for yield strength and flow stress of steels through nanoindentation experiments is proposed. While determination of k(f) for flow stress is on the basis of grain boundary strengthening evaluated by sharp indentation, k(y) for yield strength was computed with pop-in data from spherical indentations. Good agreement between estimated and literature data, obtained from the tensile tests, validates the proposed methodology. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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In this paper based on the basic principles of gauge/gravity duality we compute the hall viscosity to entropy ratio in the presence of various higher derivative corrections to the dual gravitational description embedded in an asymptotically AdS(4) space time. As the first step of our analysis, considering the back reaction we impose higher derivative corrections to the abelian gauge sector of the theory where we notice that the ratio indeed gets corrected at the leading order in the coupling. Considering the probe limit as a special case we compute this leading order correction over the fixed background of the charged black brane solution. Finally we consider higher derivative (R-2) correction to the gravity sector of the theory where we notice that the above ratio might get corrected at the sixth derivative level.

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Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultralow leakage, and high ON-current densities exhibited by back-end-of-the-line-friendly access devices based on copper-containing mixed-ionic-electronic-conduction (MIEC) materials. Hall effect measurements confirm that the electronic current is hole dominated; a commercial semiconductor modeling tool is adapted to model MIEC. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect ratio, thickness, and device diameter.

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The advent of a new class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as transport between localized states versus extended state conduction. Here, we investigate the origin of the ultralow degree of disorder (E-a similar to 16 meV) and the ``bandlike'' negative temperature (T) coefficient of the field effect electron mobility: mu(e)(FET) (T) in a high performance (mu(e)(FET) > 2.5 cm(2) V-1 s(-1)) diketopyrrolopyrrole based semiconducting polymer. Models based on the framework of mobility edge with exponential density of states are invoked to explain the trends in transport. The temperature window over which the system demonstrates delocalized transport was tuned by a systematic introduction of disorder at the transport interface. Additionally, the Hall mobility (mu(e)(Hall)) extracted from Hall voltage measurements in these devices was found to be comparable to field effect mobility (mu(e)(FET)) in the high T bandlike regime. Comprehensive studies with different combinations of dielectrics and semiconductors demonstrate the effectiveness of rationale molecular design, which emphasizes uniform-energetic landscape and low reorganization energy.

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We present the first direct-numerical-simulation study of the statistical properties of two-dimensional superfluid turbulence in the simplified, Hall-Vinen-Bekharevich-Khalatnikov two-fluid model. We show that both normalfluid and superfluid energy spectra can exhibit two power-law regimes, the first associated with an inverse cascade of energy and the second with the forward cascade of enstrophy. We quantify the mutual-friction-induced alignment of normal and superfluid velocities by obtaining probability distribution functions of the angle between them and the ratio of their moduli.

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We report a theoretical prediction of a new class of bulk and intrinsic quantum anomalous Hall (QAH) insulators LaX (X=Br, Cl, and I) via relativistic first-principles calculations. We find that these systems are innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit coupling, become QAH insulators. A low-energy multiband tight-binding model is developed to understand the origin of the QAH effect. Finally, integer Chern number is obtained via Berry phase computation for each two-dimensional plane. These materials have the added benefit of a sizable band gap of as large as similar to 25 meV, with the flexibility of enhancing it to above 75 meV via strain engineering. The synthesis of LaX materials will provide the impurity-free single crystals and thin-film QAH insulators for versatile experiments and functionalities.

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A mechanism for the reversed field pinch (RFP) dynamo is proposed, based on the nonlinear Hall effect of a saturated helical MHD instability. The sign and magnitude of the effect are shown to be those required for the RFP dynamo. Predictions of the model are in accord with RFP fluctuation measurements.

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Maria Graham, escritora inglesa, nasceu perto de Papscastle em 19 d e junho de 1785 e morreu em Londres, em 28 de novembro de 1842. Casada com o capitão Thomas Graham comandante da fragata Doris fez em sua companhia a sua primeira viagem ao Brasil, em 1821, quando se dirigia ao Chile. Em 1824, já viúva, retornou ao Rio de Janeiro como preceptora de D. Maria da Glória, filha do Imperador D. Pedro I e de Dona Leopoldina. Permaneceu no país até setembro de 1825, quando retornou para Londres por motivos políticos. Mais tarde, casou-se com Augustus Earle Calcott e passou a assinar suas obras literárias como Lady Calcott. ‘Journal of a voyage to Brazil’ relata as viagens da autora ao Brasil. Descreve o país, seus habitantes e os costumes das diferentes classes sociais, principalmente em Pernambuco, na Bahia e no Rio de Janeiro. Constitui importante fonte de informações sobre a época da independência e uma das melhores publicações do século XIX. As ilustrações, com desenhos da autora, são excelentes. De acordo com Borba de Moraes ‘a Catholic University Library em Washington (Oliveira Lima Collection) possui um exemplar que pertenceu à própria autora, onde ela fez correções e anotações para uma segunda edição, mas que nunca chegou a ser publicada. Essas anotações são muito importantes, sobretudo para a história da revolução de Pernambuco e a atuação de Cochrane. Quanto aos acontecimentos de sua vinda ao Rio de Janeiro como preceptora de Dona Maria da Glória, existe um diário que foi publicado por Rodolfo Garcia com preciosas notas e prefácio no volume 60 dos Anais da Biblioteca Nacional do Rio de Janeiro, assim como uma biografia de D. Pedro I e correspondência entre Maria Graham e a Imperatriz’

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O primeiro volume foi editado em 1832 e o segundo em 1837, após a morte do autor, fato que contribuiu para a pouco acurada nomenclatura em português verificada no segundo volume, conforme afirma Borba de Moraes. A grande importância do trabalho de Pohl residiu na descrição de Goiás, à época, uma parte do Brasil quase desconhecida para os cientistas estrangeiros. Seu texto contém descrições sobre a arquitetura colonial e do século XIX. Pohl também produziu um atlas que complementou, por meio de belas ilustrações, o trabalho contido nesses dois volumes. Estes, especialmente se acompanhados do atlas, são um trabalho mais raro do que os relativos às viagens de Martins