Import substitution of combination wire rope. Part 1. Design, production and evaluation of a prototype combination wire rope

Model combination wire ropes with different covering materials were prepared and worked out specification for the prototype. A table model hand operated wire rope twisting machine was also developed for this. Prototype combination wire rope was twisted in collaboration with M/s South India Wire Ropes Ltd., Alwaye. Specification details, properties and field performance of the prototype studied are reported.

Import substitution of combination wire rope. Part 2. Production and standardisation of 17 mm dia combination wire rope.

The prototype combination wire rope (Cift-CWR 1) developed for deep sea trawling was further studied for improvement, optimisation of efficiency and standardization. A series of improved prototype combination wire ropes (Cift-CWR 2 to 6) were twisted and evaluated their mechanical properties and reported in this paper with recommendations for a standard 17mm dia combination wire rope of 6S (7C+8+1 Scr) + 6 Crs(6+1+1 Crc) construction.

Import substitution of combination wire rope. Part 3: Comparison of standard Cift-CWR and imported combination wire rope

Tensile and extension properties of standard Cift-CWR and imported combination wire ropes from Japan, Norway and Denmark are studied and the analysis is presented in the paper. Tensile and chemical properties of steel wire, tensile and abrasive properties of PP covering, effect of twist on material at different stages are worked out and reported.

Avoidant Learning Ability in Free Flying Housefly (Aldrichina grahami)by Electric Shock

下载PDF阅读器研究证实:蜜蜂和果蝇具有良好的学习记忆能力.利用自主改良的研究装置对另一种具有强大生存本能的双翅目昆虫--巨尾阿丽蝇(Aldrichina grahami)在自由状态下电击同避学习能力进行研究.结果表明,巨尾阿丽蝇具有良好的学习记忆能力,因为当刺激电压范围为5V到45V时,观察到巨尾阿丽蝇有显著的回避电刺激行为,而当电压达到60V时会受到明显伤害.由此推测,巨尾阿丽蝇适合作为神经系统研究的动物模型.该实验所采用的实验范例较以往有所改进,适合作为自由状态下研究昆虫的工具.

Steady-state analytical model for the trench insulated gate bipolar transistor

A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.

Point injection in trench insulated gate bipolar transistor for ultra low losses

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

Electric times in olfaction.

Recent work established the spread of interglomerular excitation in the Drosophila antennal lobe. Two papers in this issue of Neuron, by Huang et al. and Yaksi and Wilson, show that cholinergic krasavietz local interneurons are a major substrate for this spread of excitation, predominantly via electrical coupling.

The experiment to evaluate the AC loss of 2G HTS windings in the application of rotating electric machines

This paper presents the design of an AC loss experiment using nitrogen boil-off method. This experiment is aimed at exploring the AC loss of HTS double race-track coils which will be installed on the rotor of a wind turbine generator. The operating environment is simulated by designing a cryostat with rotating magnetic field windings. Apart from the fact that the alternating magnetic field causes most of AC loss on the HTS coils, we also believe that the DC background field would be another important factor causing AC loss if the HTS coil is experiencing by both alternating magnetic field in the perpendicular direction and DC background field in the parallel direction. In order to perform the boil-off measurement, we present the method to estimate the heat leakage in the cryostat which might cause errors to the measurement. © 2011 IEEE.

Half-bridge SIC inverter for hybrid electric vehicles: Design, development and testing at higher operating temperature

In recent years, Silicon Carbide (SiC) semiconductor devices have shown promise for high density power electronic applications, due to their electrical and thermal properties. In this paper, the performance of SiC JFETs for hybrid electric vehicle (HEV) applications is investigated at heatsink temperatures of 100 °C. The thermal runaway characteristics, maximum current density and packaging temperature limitations of the devices are considered and the efficiency implications discussed. To quantify the power density capabilities of power transistors, a novel 'expression of rating' (EoR) is proposed. A prototype single phase, half-bridge voltage source inverter using SiC JFETs is also tested and its performance at 25 °C and 100 °C investigated.