The influence of the dispersion method on the electrical properties of vapor-grown carbon nanofiber/epoxy composites

The influence of the dispersion of vapor-grown carbon nanofibers (VGCNF) on the electrical properties of VGCNF/ Epoxy composites has been studied. A homogenous dispersion of the VGCNF does not imply better electrical properties. In fact, it is demonstrated that the most simple of the tested dispersion methods results in higher conductivity, since the presence of well-distributed nanofiber clusters appears to be a key factor for increasing composite conductivity.

Effect of filler content on morphology and physical-chemical characteristics of poly(vinylidene fluoride)/NaY-zeolite filled membranes

Poly(vinylidene fluoride) electrospun membranes have been prepared with different NaY zeolite contents up to 32%wt. Inclusion of zeolites induces an increase of average fiber size from ~200 nm in the pure polymer up to ~500 nm in the composite with 16%wt zeolite content. For higher filler contents, a wider distribution of fibers occurs leading to a broader size distributions between the previous fiber size values. Hydrophobicity of the membranes increases from ~115º water contact angle to ~128º with the addition of the filler and is independent on filler content, indicating a wrapping of the zeolite by the polymer. The water contact angle further increases with fiber alignment up to ~137º. Electrospun membranes are formed with ~80 % of the polymer crystalline phase in the electroactive  phase, independently on the electrospinning processing conditions or filler content. Viability of MC3T3-E1 cells on the composite membranes after 72 h of cell culture indicates the suitability of the membranes for tissue engineering applications.

Effect of cylindrical filler aggregation on the electrical conductivity of composites

This work reports on the effect of carbon nanotube aggregation on the electrical conductivity and other network properties of polymer/carbon nanotube composites by modeling the carbon nanotubes as hard-core cylinders. It is shown that the conductivity decreases for increasing filler aggregation, and that this effect is more significant for higher cylinder volume fractions. It is also demonstrated, for volume fractions at which the giant component is present, that increasing the fraction of cylinders within clusters leads to a break of the giant component and the formation of a set of finite clusters. The decrease of the giant component with the increase of the fraction of cylinders within the cluster can be related to a decrease of the spanning probability due to a decrease of the number of cylinders between the clusters. Finally, it is demonstrated that the effect of aggregation can be understood by employing the network theory.

Growth and physiological characteristics of the weed false johnsongrass ( Sorghum arundinaceum (Desv.) Stapf)

ABSTRACT Sorghum arundinaceum (Desv.) Stapf is a weed that belongs to the Poaceae family and is widespread throughout Brazil. Despite the frequent occurrence, infesting cultivated areas, there is little research concerning the biology and physiology of this species. The objective of this research was to evaluate the growth, carbon partitioning and physiological characteristics of the weed Sorghum arundinaceum in greenhouse. Plants were collected at regular intervals of seven days, from 22 to 113 days after transplanting (DAT). In each sample, we determined plant height, root volume, leaf area and dry matter, and subsequently we perfomed the growth analysis, we have determined the dry matter partitioning among organs, the accumulation of dry matter, the specific leaf area, the relative growth rate and leaf weight ratio. At 36, 78 and 113 DAT, the photosynthetic and transpiration rates, stomatal conductance, CO2 concentration and chlorophyll fluorescence were evaluated. The Sorghum arundinaceum reached 1.91 in height, with slow initial growth and allocated much of the biomass in the roots. The photosynthetic rate and the maximum quantum yield of FSII are similar throughout the growth cycle. At maturity the Sorghum arundinaceum presents higher values of transpiration rate, stomatal conductance and non-photochemical quenching coefficient (NPQ).

Wavelength Selective a-SiC:H p-i-n/p-i-n Heterostructure for Fluorescent Proteins Detection

In this paper we present results on the optimization of multilayered a-SiC:H heterostructures that can be used as optical transducers for fluorescent proteins detection using the Fluorescence Resonance Energy Transfer approach. Double structures composed by pin based aSiC:H cells are analyzed. The color discrimination is achieved by ac photocurrent measurement under different externally applied bias. Experimental data on spectral response analysis, current-voltage characteristics and color and transmission rate discrimination are reported. An electrical model, supported by a numerical simulation gives insight into the device operation. Results show that the optimized a-SiC:H heterostructures act as voltage controlled optical filters in the visible spectrum. When the applied voltages are chosen appropriately those optical transducers can detect not only the selective excitation of specimen fluorophores, but also the subsequent weak acceptor fluorescent channel emission.

Protecção contra descargas atmosféricas: aplicação informática de identificação das vulnerabilidades das edificações e de apoio à concepção da protecção

A concepção de instalações eléctricas deve garantir condições de segurança para as pessoas e equipamentos. Para tal é exigida, quer por força de regulamentação ou de normalização, a instalação de dispositivos que garantam a detecção e a protecção contra os defeitos mais comuns nas instalações eléctricas como, por exemplo, as sobreintensidades e as sobretensões. Susceptíveis de criar sobretensões perigosas nas instalações eléctricas, as descargas atmosféricas podem ainda causar danos estruturais elevados, o que, em algumas actividades económicas, torna fundamental a implementação de medidas de protecção contra este fenómeno natural. A protecção contra descargas atmosféricas directas consiste em identificar as vulnerabilidades das estruturas e, nesses locais, implementar dispositivos de captura, direccionamento e escoamento da descarga atmosférica à terra, em condições de segurança. O presente trabalho, desenvolvido no âmbito da dissertação de Mestrado em Engenharia Electrotécnica, visa desenvolver e implementar uma ferramenta computacional, baseada em programas de desenho assistido por computador (CAD) de utilização corrente na área de projecto de arquitectura e de engenharia, que permita, no âmbito de normas internacionais, a análise e implementação de sistemas de protecção em edifícios contra descargas atmosféricas de uma forma rápida e expedita. Baseado num programa CAD 3D, que permite a modelização tridimensional das estruturas a proteger, a ferramenta desenvolvida tentará identificar as suas vulnerabilidades das estruturas às descargas atmosféricas directas, com o intuito de implementar as medidas de protecção mais adequadas do ponto de vista técnico económico. Prevê-se que a ferramenta resultante deste estudo, o Simulador do Modelo Electrogeométrico (SIMODEL), possibilite aos projectistas e particularmente aos alunos das unidades curriculares na área do projecto de instalações eléctricas da Área Departamental de Engenharia de Sistemas e Potencia e Automação (ADESPA) do ISEL, estudar e implementar sistemas de protecção contra descargas atmosféricas (SPDA) baseados na normalização internacional do CENELEC e da IEC, nomeadamente as normas da série 62305.

Relevance of physicochemical characterization in nanotoxicology studies

Nanomaterials (NMs) with the same chemistry can greatly differ by size, surface area, shape, stability, rigidness, coating or electrical charge and these characteristics affect nano-bio interactions, leading to different toxic potential. In this communication is shown that closely related NMs can have different genotoxic effects, evidencing the importance of investigating the toxic potential of each NM individually, instead of assuming a common mechanism and equal genotoxic effects for a set of similar NMs. The importance of considering complexity of in vivo systems in nanotoxicology, such as the use of tridimensional cellular models, air-liquid interface exposure or in vivo models that mimic human routes of exposure, is underlined.

A non-pixel image reader for continuous image detection based on tandem heterostructures

An optically addressed read-write sensor based on two stacked p-i-n heterojunctions is analyzed. The device is a two terminal image sensing structure. The charge packets are injected optically into the p-i-n writer and confined at the illuminated regions changing locally the electrical field profile across the p-i-n reader. An optical scanner is used for charge readout. The design allows a continuous readout without the need for pixel-level patterning. The role of light pattern and scanner wavelengths on the readout parameters is analyzed. The optical-to-electrical transfer characteristics show high quantum efficiency, broad spectral response, and reciprocity between light and image signal. A numerical simulation supports the imaging process. A black and white image is acquired with a resolution around 20 mum showing the potentiality of these devices for imaging applications.

Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction

A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.

Image and color recognition using amorphous silicon p-i-n photodiodes

Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position ("sub-pixel") is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.

New p-i-n Si : H imager configuration for spatial resolution improvement

Amorphous glass/ZnO-Al/p(a-Si:H)/i(a-Si:H)/n(a-Si1-xCx:H)/Al imagers with different n-layer resistivities were produced by plasma enhanced chemical vapour deposition technique (PE-CVD). An image is projected onto the sensing element and leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout, and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The influence of the intensity of the optical image projected onto the sensor surface is correlated with the sensor output characteristics (sensitivity, linearity blooming, resolution and signal-to-noise ratio) are analysed for different material compositions (0.5 < x < 1). The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity signal and on the spatial resolution are achieved at 0.2 mW cm(-2) light flux by decreasing the n-layer conductivity by the same amount. A physical model supported by electrical simulation gives insight into the image-sensing technique used.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser scanned photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the colour detection process are analysed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a Double Color Laser Scanned Photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the color detection process are analyzed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Stacked photo-sensing devices based on SiC alloys A non-pixelled architecture for imagers and demultiplexing devices

In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented and compared with the single p-i-n sensing structures. The imagers utilise self-field induced depletion layers for light detection and a modulated laser beam for sequential readout. The effect of the sensing element structure, cell configurations (single or tandem), and light source properties (intensity and wavelength) are correlated with the sensor output characteristics (light-to-dark sensivity, spatial resolution, linearity and S/N ratio). The readout frequency is optimized showing that scans speeds up to 104 lines per second can be achieved without degradation in the resolution. Multilayered p-i'-n-p-i-n heterostructures can also be used as wavelength-division multiplexing /demultiplexing devices in the visible range. Here the sensor element faces the modulated light from different input colour channels, each one with a specific wavelength and bit rate. By reading out the photocurrent at appropriated applied bias, the information is multiplexed or demultiplexed and can be transmitted or recovered again. Electrical models are present to support the sensing methodologies.

Educational characteristics of adult students in portuguese technological schools

Despite a massive expansion of education in Portugal, since the 1970’s, educational attainment of the adult population in the country remains low. The numbers of working-age people in some form of continuing education are among the lowest, according to the OECD and EU-27 statistics. Technological Schools(TS), initially created in the 1990’s, under the umbrella of the Ministry of Economy in partnership with industry and industrial associations, aimed to prepare qualified staff for industries and services in the country, particularly in the engineering sector, through the provision of post secondary non-university programmes of studies, the CET (Technological Specialization Courses). Successful CET students are awarded a DET(Diploma of Technological Specialization), which corresponds to Vocational Qualification level IV of the EU, according to the latest alteration (2005) of the Education Systems Act (introduced in 1986). In this, CET’s are also clearly defined as one of the routes for access to Higher Education (HE), in Portugal. The PRILHE (Promoting Reflective and Independent Learning in Higher Education) multinational project, funded by the European Socrates Grundtvig Programme, aimed to identify the learning processes which enable adult students in higher education to become autonomous reflective learners and search best practices to support these learning processes. During this research, both quantitative and qualitative methods were used to determine how students organise their studies and develop their learning skills. The Portuguese partner in the project’ consortium used a two case studies approach, one with students of Higher Education Institutions and other with students of TS. This paper only applies to students of TS, as these have a predominant bias towards engineering. Results show that student motivation and professional teaching support contribute equally to the development of an autonomous and reflective approach to learning in adult students; this is essential for success in a knowledge economy, where lifelong learning is the key to continuous employment.