Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.

Effect of Solvent-Induced Coil to Helix Conformational Change on the Two-Photon Absorption Spectrum of Poly(3,6-phenanthrene)

This paper investigates the effect of solvent-induced conformational changes of poly(3,6-phenanthrene) on their two-photon absorption (2PA). Such effect was studied employing the wavelength-tunable femtosecond Z-scan technique and modeled using the sum-over-essential states approach. We observed a strong reduction of the 2PA cross-section when the sample was prepared in hexane (poor solvent) in comparison to chloroform (good solvent), which is related to the conformation adopted by the polymer in each case. In chloroform it adopts a random coil conformation, as opposed to the one-handed helix conformation in hexane. Our results pointed out that the coil to helix conformation change decreases the degree of molecular planarity of the polymer pi-conjugated backbone, which is primarily responsible for their optical nonlinearity, contributing to diminishing the effective transition dipole moments and, consequently, the 2PA cross-section. Moreover, by studying the nonlinear response with different light polarization, we showed that, although the solvent-induced conformational change does not alter the molecular symmetry of the polymer, it modifies considerably the direction of the transition dipole moments between the excited states.

Spectrally-controlled, gain-switched operation of InGaN diode laser

Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.

Simultaneous interrogation of interferometric and Bragg grating sensors

We propose a new method for the simultaneous interrogation of conventional two-beam interferometers and Bragg grating sensors. The technique employs an unbalanced Mach-Zehnder interferometer illuminated by a single low-coherence source, which acts as a wavelength-tunable source for the grating and as a path-matched f ilter for the Fizeau interferometer, thus providing a high phase resolution output for each sensor. The grating sensor demonstrates a dynamic strain resolution of ~0.05 µe/vHz at 20 Hz, while the interferometric phase resolution is better than 1 mrad/vHz at 20 Hz, corresponding to an rms mirror displacement of 0.08 nm.

Simultaneous interrogation of interferometric and Bragg grating sensors

We propose a new method for the simultaneous interrogation of conventional two-beam interferometers and Bragg grating sensors. The technique employs an unbalanced Mach-Zehnder interferometer illuminated by a single low-coherence source, which acts as a wavelength-tunable source for the grating and as a path-matched f ilter for the Fizeau interferometer, thus providing a high phase resolution output for each sensor. The grating sensor demonstrates a dynamic strain resolution of ~0.05 µe/vHz at 20 Hz, while the interferometric phase resolution is better than 1 mrad/vHz at 20 Hz, corresponding to an rms mirror displacement of 0.08 nm.

Spectrally controlled, picosecond pulse generation from an InGaN violet diode laser

Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser in an external cavity.

Mode locking of semiconductor laser with curved waveguide and passive mode expander

Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

Active wavelength control of tunable lasers for use in Un cooled WDM systems

It is shown for the first time that uncooled tunable DBR-laser diodes can be used as athermal WDM sources. Using novel bias current control, absolute wavelength control to within 6Å has been achieved for temperatures up to 70°C. © 2000 Optical Society of America.

Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors

A simple process for fabricating low-cost Si-based continuously tunable long-wavelength resonant-cavity-enhanced (RCE) photodetectors has been investigated. High-contrast SiO2/Si(Deltan similar to2) was employed as mirrors to eliminate the need to grow thick epitaxial distributed Bragg reflectors. Such high-reflectivity SiO2/Si mirrors were deposited on the as-grown InGaAs epitaxy layers, and then were bonded to silicon substrates at a low temperature of 350 C without any special treatment on bonding surfaces, employing silicate gel as the bonding medium. The cost is thus decreased. A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3-1.6 mum was obtained, with a quantum efficiency of about 44% at the resonant wavelength of 1476 nm and a tuning range of 14.5 nm. It demonstrates a great potential for industry processes. (C) 2005 American Institute of Physics.

Tunable Ag surface-plasmon-resonance wavelength and its application on the photochromic behavior of TiO2-Ag films

Surface and bulk plasmon resonance of noble metal particles play an essential role in the multicolor photochromism of semiconductor systems containing noble metal particles, Here we examined several key parameters affecting surface plasmon resonance wavelength (SPRW) of Ag particles and investigated the relation between surface plasmon and photochromic reaction wavelength. From the transmission spectra of sandwiched (TiO2/Ag/TiO2) and overcoated (Ag/TiO2) films deposited on quartz substrates at room temperature by rf helicon magnetron sputtering, we demonstrated that the SPRW can be made tunable by changing the surrounding media and thickness of the metal layer. The coloration and bleaching in visible light region due to photochromism were clearly observed for the films inserted with a 0.55 nm Ag layer.