Direct Evaluation Of Transient Stability Improvement With Static Var Compensators Using A Structure Preserving Energy Function

The ability of Static Var Compensators (SVCs) to rapidly and continuously control reactive power in response to changing system conditions can result in the improvement of system stability and also increase the power transfer in the transmission system. This paper concerns the application of strategically located SVCs to enhance the transient stability limits and the direct evaluation of the effect of these SVCs on transient stability using a Structure Preserving Energy Function (SPEF). The SVC control system can be modelled from the steady- state control characteristic to accurately simulate its effect on transient stability. Treating the SVC as a voltage-dependent reactive power load leads to the derivation of a path-independent SPEF for the SVC. Case studies on a 10-machine test system using multiple SVCs illustrate the effects of SVCs on transient stability and its accurate prediction.

Evaluation and improvement of total transfer capability - A case study

With deregulation, the total transfer capability (TTC) calculation, which is the basis for evaluating available transfer capability (ATC), has become very significant. TTC is an important index in power markets with large volume of inter-area power exchanges and wheeling transactions taking place on an hourly basis. Its computation helps to achieve a viable technical and commercial transmission operation. The aim of the paper is to evaluate TTC in the interconnections and also to improve it using reactive optimization technique and UPFC devices. Computations are carried out for normal and contingency cases such as single line, tie line and generator outages. Base and optimized results are presented, and the results show how reactive optimization and unified power flow controller help to improve the system conditions. In this paper repeated power flow method is used to calculate TTC due to its ease of implementation. A case study is carried out on a 205 bus equivalent system, a part of Indian Southern grid. Parameters like voltage magnitude, L-index, minimum singular value and MW losses are computed to analyze the system performance.

An ANN based approach for voltage stability assessment

Artificial Neural Networks (ANNs) have recently been proposed as an alterative method for salving certain traditional problems in power systems where conventional techniques have not achieved the desired speed, accuracy or efficiency. This paper presents application of ANN where the aim is to achieve fast voltage stability margin assessment of power network in an energy control centre (ECC), with reduced number of appropriate inputs. L-index has been used for assessing voltage stability margin. Investigations are carried out on the influence of information encompassed in input vector and target out put vector, on the learning time and test performance of multi layer perceptron (MLP) based ANN model. LP based algorithm for voltage stability improvement, is used for generating meaningful training patterns in the normal operating range of the system. From the generated set of training patterns, appropriate training patterns are selected based on statistical correlation process, sensitivity matrix approach, contingency ranking approach and concentric relaxation method. Simulation results on a 24 bus EHV system, 30 bus modified IEEE system, and a 82 bus Indian power network are presented for illustration purposes.

Application of UPFC for system security improvement under normal and network contingencies

Electric power systems are exposed to various contingencies. Network contingencies often contribute to over-loading of network branches, unsatisfactory voltages and also leading to problems of stability/voltage collapse. To maintain security of the systems, it is desirable to estimate the effect of contingencies and plan suitable measures to improve system security/stability. This paper presents an approach for selection of unified power flow controller (UPFC) suitable locations considering normal and network contingencies after evaluating the degree of severity of the contingencies. The ranking is evaluated using composite criteria based fuzzy logic for eliminating masking effect. The fuzzy approach, in addition to real power loadings and bus voltage violations, voltage stability indices at the load buses also used as the post-contingent quantities to evaluate the network contingency ranking. The selection of UPFC suitable locations uses the criteria on the basis of improved system security/stability. The proposed approach for selection of UPFC suitable locations has been tested under simulated conditions on a few power systems and the results for a 24-node real-life equivalent EHV power network and 39-node New England (modified) test system are presented for illustration purposes.

Minimization of the effects of harmonics and voltage dip caused by electric arc furnace

This study examines the thermal efficiency of the operation of arc furnace and the effects of harmonics and voltage dips of a factory located near Bangkok. It also attempts to find ways to improve the performance of the arc furnace operation and minimize the effects of both harmonics and voltage dips. A dynamic model of the arc furnace has been developed incorporating both electrical and thermal characteristics. The model can be used to identify potential areas for improvement of the furnace and its operation. Snapshots of waveforms and measurement of RMS values of voltage, current and power at the furnace, at other feeders and at the point of common coupling were recorded. Harmonic simulation program and electromagnetic transient simulation program were used in the study to model the effects of harmonics and voltage dips and to identify appropriate static and dynamic filters to minimize their effects within the factory. The effects of harmonics and voltage dips were identified in records taken at the point of common coupling of another factory supplied by another feeder of the same substation. Simulation studies were made to examine the results on the second feeder when dynamic filters were used in the factory which operated the arc furnace. The methodology used and the mitigation strategy identified in the study are applicable to general situation in a power distribution system where an arc furnace is a part of the load of a customer

Medium Voltage Drive for Induction Motors Using Multilevel Octadecagonal Voltage Space Vectors

Multilevel inverters with hexagonal and dodecagonal voltage space vector structures have improved harmonic profile compared to two-level inverters. Further improvement in the quality of the waveform is possible using multilevel octadecagonal (18-sided polygon) voltage space vectors. This paper proposes an inverter circuit topology capable of generating multilevel octadecagonal voltage space vectors, by cascading two asymmetric three-level inverters. By the proper selection of dc-link voltages and the resultant switching states for the inverters, voltage space vectors, whose tips lie on three concentric octadecagons, are obtained. The advantages of octadecagonal voltage space vector-based pulsewidth modulation (PWM) techniques are the complete elimination of fifth, seventh, eleventh, and thirteenth harmonics in phase voltages and the extension of linear modulation range. In this paper, a simple PWM timing calculation method is also proposed. Experimental results have been presented in this paper to validate the proposed concept.

Field Emission with Ultra low Turn On Voltage from Metal Decorated Carbon Nanotubes

A simple and scalable method of decorating 3D-carbon nanotube (CNT) forest with metal particles has been developed. The results observed in aluminum (AI) decorated CNTs and copper (Cu) decorated CNTs on silicon (Si) and Inconel are compared with undecorated samples. A significant improvement in the field emission characteristics of the cold cathode was observed with ultralow turn on voltage (E-to similar to 0.1 V/mu m) due to decoration of CNTs with metal nanoparticles. Contact resistance between the CNTs and the substrate has also been reduced to a large extent, allowing us to get stable emission for longer duration without any current degradation, thereby providing a possibility of their use in vacuum microelectronic devices.

An Improved Dead-Time Compensation Scheme for Voltage Source Inverters Considering the Device Switching Transition Times

Inverter dead-time, which is meant to prevent shoot-through fault, causes harmonic distortion and change in the fundamental voltage in the inverter output. Typical dead-time compensation schemes ensure that the amplitude of the fundamental output current is as desired, and also improve the current waveform quality significantly. However, even with compensation, the motor line current waveform is observed to be distorted close to the current zero-crossings. The IGBT switching transition times being significantly longer at low currents than at high currents is an important reason for this zero-crossover distortion. Hence, this paper proposes an improved dead-time compensation scheme, which makes use of the measured IGBT switching transition times at low currents. Measured line current waveforms in a 2.2 kW induction motor drive with the proposed compensation scheme are compared against those with the conventional dead-time compensation scheme and without dead-time compensation. The experimental results on the motor drive clearly demonstrate the improvement in the line current waveform quality with the proposed method.

Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without affecting the breakdown voltage. An improvement of 50% in R-ON and 45% in RF gain is achieved at 1 GHz. Large-signal time-domain analysis is done to explore the output power capability of the device.

Improvement of Aircraft Rolling Power by Use of Piezoelectric Actuators

Piezoelectric actuators are distributed on both side of a rectangular wing model,and the possibility of improvement of aircraft rolling power is investigated. The difference between the model with aileron deflection and the model without aileron (fictitious control surface, FCS) is studied. The analytical results show that these two cases are substantial different. In aileron deflection case, the aeroelastic effect is disadvantageous, so the structural stiffness should be high until the electrical voltage is not necessary. But in the case of FCS,the aeroelastic effect is advantageous and it means that lower structural stiffness can lead to lower voltage. Compared with aileron project, the FCS project can save structure weight.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation

An investigation of hardening the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers to total-dose irradiation has been made by implanting nitrogen into the BOX layers with a constant dose at different implantation energies. The total-dose radiation hardness of the BOX layers is characterized by the high frequency capacitance-voltage (C-V) technique. The experimental results show that the implantation of nitrogen into the BOX layers can increase the BOX hardness to total-dose irradiation. Particularly, the implantation energy of nitrogen ions plays an important role in improving the radiation hardness of the BOX layers. The optimized implantation energy being used for a nitrogen dose, the hardness of BOX can be considerably improved. In addition, the C-V results show that there are differences between the BOX capacitances due to the different nitrogen implantation energies.

Performance improvement in direct methanol fuel cell cathode using high mesoporous area catalyst support

Black Pearls 2000 (designated as BP- 2000) and Vulcan XC-72 (designated as XC-72) carbon blacks were chosen as supports to prepare 40 wt % (the targeted value) Pt/C catalysts by a modified polyol process. The carbon blacks were characterized by N-2 adsorption and Fourier tranform infrared spectroscopy. The prepared catalysts were characterized by inductively coupled plasma atomic emission spectroscopy, transmission electron microscopy, scanning electron microscopy (SEM), in situ cyclic voltammetry, and current-voltage curves. On BP- 2000, Pt nanoparticles were larger in size and more unevenly distributed than on XC-72. It was observed by SEM that the corresponding catalyst layer on BP- 2000 was thicker than that of XC-72 based catalyst at almost the identical catalyst loading. And the BP- 2000 supported catalyst gave a better single cell performance at high current densities. These results suggest that the performance improvement is due to the enhanced oxygen diffusion and water removal capability when BP- 2000 is used as cathode catalyst support. (C) 2004 The Electrochemical Society.

Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes

It has been found that cesium hydroxide (CsOH) doped tris(8-hydroxyquinoline) aluminum (Alq(3)) as an interfacial modification layer on indium-tin-oxide (ITO) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (IBOLEDs). The efficiency and high temperature stability of IBOLEDs with CsOH:Alq(3) interfacial layer are greatly improved with respect to the IBOLEDs with the case of Cs2CO3:Alq(3). Herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of CsOH:Alq(3) interfacial layer on ITO cathode in IBOLEDs by various characterization methods, including atomic force microscopy (AFM), ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS) and capacitance versus voltage (C-V). The results clearly demonstrate that the CsOH:Alq(3) interfacial modification layer on ITO cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency.

Improvement of luminescence efficiency by electrical annealing in single-layer organic light-emitting diodes based on a conjugated dendrimer

In this paper, we study the effects of electrical annealing at different voltages on the performance of organic light-emitting diodes. The light-emitting diodes studied here are single-layer devices based on a conjugated dendrimer doped with 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole as the emissive layer. We find that these devices can be annealed electrically by applying a voltage. This process reduces the turn-on voltage and enhances the brightness and efficiency. We obtained an external electroluminescence quantum efficiency of 0.07% photon/electron and a brightness of 2900 cd m(-2) after 12.4 V electrical annealing, which are about 6 times and 9 times higher than un-annealing devices, respectively. The improved luminance and efficiency are attributed to the presence of a space charge field near the electrodes caused by charging of traps.