Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Subtraction of scattering parameters for small-signal modulation characteristics of laser diode

An extended subtraction method of scattering parameters for characterizing laser diode is proposed in this paper. The intrinsic response is extracted from the measured transmission coefficients of laser diode, and the parasitics of packaging net-work laser chip are determined from the measured reflection coefficient of laser diode simultaneously. It is shown that the theories agree well with the experimental results.

Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.

Small-signal power measuring technique for measuring the frequency response of electroabsorption modulators

We propose and demonstrate measurement of the frequency response of an electroabsorption (EA) modulator using an extended small-signal power measuring technique. In this technique, the modulator is driven by a microwave carrier amplitude modulated by a low-frequency signal, and the modulator frequency response is obtained without the need of a high-speed photodetector. Based upon the nonlinear characteristics of the EA modulator and the underlying principle of the present method, equations have been derived. A measurement scheme using a network analyzer and a low-speed photodetector has been proposed and constructed, and the experimental results confirm that our proposed method is as accurate as the swept-frequency measurement using a network analyzer directly.

A small signal equivalent circuit model for resonant tunnelling diode

We report a resonant tunneling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage (I-V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunneling process, is also calculated to be 2.09 ps.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

Small-signal and large-signal performance test of high-speed optoelectronics devices

This paper presents measurement methods for determining the reflection coefficients and frequency responses of semiconductor laser diodes, photodiodes, and EA modulator chips. A novel method for determining the intrinsic frequency responses of laser diodes is also proposed, and applications of the developed measurement methods are discussed. We demonstrate the compensation of bonding wire on the capacitances of both the submount and the laser diode, and present a method for estimating the potential modulation bandwidth of TO packaging technique. Initial study on removing the effects of test fixture on large-signal performances of optoelectronic devices at high data rate is also given.

Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting lasers (VCSEL's) are presented. The modulation properties both in analytic-equation calculation and in circuit model simulation are studied. The analytic-equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulation is simulated by using Pspice program respectively. The results of calculation and the simulation are in good agreement with each other. Experiment is performed to testify the circuit model.

Small signal equivalent circuit model of vertical cavity surface emitting lasers

Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.

Design of a salisbury screen absorber using frequency selective surfaces to improve bandwidth and angular stability performance

A new design method that greatly enhances the reflectivity bandwidth and angular stability beyond what is possible with a simple Salisbury screen is described. The performance improvement is obtained from a frequency selective surface (FSS) which is sandwiched between the outermost 377 Ω/square resistive sheet and the ground plane. This is designed to generate additional reflection nulls at two predetermined frequencies by selecting the size of the two unequal length printed dipoles in each unit cell. A multiband Salisbury screen is realised by adjusting the reflection phase of the FSS to position one null above and the other below the inherent absorption band of the structure. Alternatively by incorporating resistive elements midway on the dipoles, it is shown that the three absorption bands can be merged to create a structure with a −10 dB reflectivity bandwidth which is 52% larger and relatively insensitive to incident angle compared to a classical Salisbury screen having the same thickness. CST Microwave Studio was used to optimise the reflectivity performance and simulate the radar backscatter from the structure. The numerical results are shown to be in close agreement with bistatic measurements for incident angles up to 40° over the frequency range 5.4−18 GHz.

An approach to determine the local boundary of small disturbance voltage stability region in a cut-set power space:基于微扰的割集电压稳定域局部边界求解方法

A new approach to determine the local boundary of voltage stability region in a cut-set power space (CVSR) is presented. Power flow tracing is first used to determine the generator-load pair most sensitive to each branch in the interface. The generator-load pairs are then used to realize accurate small disturbances by controlling the branch power flow in increasing and decreasing directions to obtain new equilibrium points around the initial equilibrium point. And, continuous power flow is used starting from such new points to get the corresponding critical points around the initial critical point on the CVSR boundary. Then a hyperplane cross the initial critical point can be calculated by solving a set of linear algebraic equations. Finally, the presented method is validated by some systems, including New England 39-bus system, IEEE 118-bus system, and EPRI-1000 bus system. It can be revealed that the method is computationally more efficient and has less approximation error. It provides a useful approach for power system online voltage stability monitoring and assessment. This work is supported by National Natural Science Foundation of China (No. 50707019), Special Fund of the National Basic Research Program of China (No. 2009CB219701), Foundation for the Author of National Excellent Doctoral Dissertation of PR China (No. 200439), Tianjin Municipal Science and Technology Development Program (No. 09JCZDJC25000), National Major Project of Scientific and Technical Supporting Programs of China During the 11th Five-year Plan Period (No. 2006BAJ03A06). ©2009 State Grid Electric Power Research Institute Press.

Identification of Small Signal Oscillation Mode Parameters from Simulated and Actual PMU Ringdown Data

This paper presents the practical use of Prony Analysis to identify small signal oscillation mode parameters from simulated and actual phasor measurement unit (PMU) ringdown data. A well-known two-area four-machine power system was considered as a study case while the latest PMU ringdown data were collected from a double circuit 275 kV main interconnector on the Irish power system. The eigenvalue analysis and power spectral density were also conducted for the purpose of comparison. The capability of Prony Analysis to identify the mode parameters from three different types of simulated PMU ringdown data has been shown successfully. Furthermore, the results indicate that the Irish power system has dominant frequency modes at different frequencies. However, each mode has good system damping.

An enhanced model for small-signal analysis of the phase-shifted full-bridge converter

This paper presents an in-depth critical discussion and derivation of a detailed small-signal analysis of the Phase-Shifted Full-Bridge (PSFB) converter. Circuit parasitics, resonant inductance and transformer turns ratio have all been taken into account in the evaluation of this topology’s open-loop control-to-output, line-to-output and load-to-output transfer functions. Accordingly, the significant impact of losses and resonant inductance on the converter’s transfer functions is highlighted. The enhanced dynamic model proposed in this paper enables the correct design of the converter compensator, including the effect of parasitics on the dynamic behavior of the PSFB converter. Detailed experimental results for a real-life 36V-to-14V/10A PSFB industrial application show excellent agreement with the predictions from the model proposed herein.1