Interface cracking and particulate size effect in particle-reinforced metal-matrix composites

The mechanical behaviors of the ceramic particle-reinforced metal matrix composites are modeled based on the conventional theory of mechanism-based strain gradient plasticity presented by Huang et al. Two cases of interface features with and without the effects of interface cracking will be analyzed, respectively. Through comparing the result based on the interface cracking model with experimental result, the effectiveness of the present model can be evaluated. Simultaneously, the length parameters included in the strain gradient plasticity theory can be obtained.

Finite Element studies on indentation size effect using a higher order strain gradient theory

In this work, a Finite Element implementation of a higher order strain gradient theory (due to Fleck and Hutchinson, 2001) has been used within the framework of large deformation elasto-viscoplasticity to study the indentation of metals with indenters of various geometries. Of particular interest is the indentation size effect (ISE) commonly observed in experiments where the hardness of a range of materials is found to be significantly higher at small depths of indentation but reduce to a lower, constant value at larger depths. That the ISE can be explained by strain gradient plasticity is well known but this work aims to qualitatively compare a gamut of experimental observations on this effect with predictions from a higher order strain gradient theory. Results indicate that many of the experimental observations are qualitatively borne out by our simulations. However, areas exist where conflicting experimental results make assessment of numerical predictions difficult. © 2012 Elsevier Ltd. All rights reserved.

Research progress of electronic properties of self-assembled semiconductor quantum dots

Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to its advantages of less crystal defects and relatively simpler fabrication technology, this material may be of important value in the research of future nanoelectronic device. In the order of vertical transport, lateral transport and charge storage, recent advances in the electronic properties of this material are brefly introduced, and the problems and perspectives are analyzed.