Photoemission optogalvanic effect studies in N2, NO2 and Ar discharges under pulsed laser excitation

A two-photon induced photoemission optogalvanic effect which brings about a change in the discharge voltage when a pulsed dye laser beam is focused on a tungsten electrode has been described. The experiment is performed with N2, NO2 and Ar discharges. The magnitude of the signal voltage is studied as a function of laser energy and discharge current. The effective quantum efficiency in the discharge is found to be larger than that in the vacuum condition.

Photoemission optogalvanic effect studies in N2, NO2 and Ar discharges under pulsed laser excitation

A two-photon induced photoemission optogalvanic effect which brings about a change in the discharge voltage when a pulsed dye laser beam is focused on a tungsten electrode has been described. The experiment is performed with N2, NO2 and Ar discharges. The magnitude of the signal voltage is studied as a function of laser energy and discharge current. The effective quantum efficiency in the discharge is found to be larger than that in the vacuum condition.

Laser-induced Bessel beams can realize fast all-optical switching in gold nanosol prepared by pulsed laser ablation

We demonstrate the possibility of realizing, all-optical switching in gold nanosol. Two overlapping laser beams are used for this purpose, due to which a low-power beam passing collinear to a high-power beam will undergo cross phase modulation and thereby distort the spatial profile. This is taken to advantage for performing logic operations. We have also measured the threshold pump power to obtain a NOT gate and the minimum response time of the device. Contrary to the general notion that the response time of thermal effects used in this application is of the order of milliseconds, we prove that short pump pulses can result in fast switching. Different combinations of beam splitters and combiners will lead to the formation of other logic functions too.

Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 degrees C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu(2)O(3), with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3457784]

Nanogravimetric study of lead underpotential deposition on selenium thin films as a semiconductor alloy formation procedure

An electrochemical quartz crystal microbalance Au electrode modified with a Se thin film was used to investigate the electrochemical behavior of lead ad-atoms using underpotential deposition (UPD) conditions. A specific quasi-reversible process was observed during the reduction of Pb2+ on Se thin films in perchloric acid media. The charge density of Pb ad-atoms on Se thin film (46.86 mu C cm(-2)) suggests a recovery of 0.1 monolayers, which is in good agreement with EQCM data. The Se thin film can be successfully alloyed with Pb atoms that are deposited by chronoamperometry using time intervals large enough to allow for diffusion toward the inner Se phase. Linear sweep voltammetry combined with EQCM in perchloric acid was used to characterize the amount of Pb absorbed in the Se thin film. These findings offer a new strategy for alloy formation in semiconductor films using UPD as an effective tool to quantify the exact amount of the incorporated metal.

In-situ-Präparation von komplexen supraleitenden und ferroelektrischen Heterostrukturen mittels gepulster Laser-Deposition

In der vorliegenden Arbeit ist die Konstruktion und der Aufbau eines Systems zur gepulsten Laserablation von dünnen Schichten beschrieben. Die hohe Flexibilität der Anlage wird ermöglicht durch einen sechsfach-Targethalter und eine Heizerkonstruktion, die einfachen Substrateinbau, hohe Temperaturhomogenität und einen zugänglichen Temperaturbereich von bis zu 1000°C erlaubt. Durch eine komplexe Laser-Optik, die eine homogene Energiedichte auf dem Target sicherstellt, wird eine optimale Filmqualität erreicht.Durch die Entwicklung einer zweistufigen Prozeßführung für Y-stabilisiertes ZrO2 wird eine Wachstumsbasis hoher kristalliner Qualität für funktionale Oxidschichten auf Silizium zur Verfügung gestellt. Es zeigt sich, daß die dielektrischen Eigenschaften der YSZ Schicht stark vom Sauerstoffgehalt, der Grenzflächenmorphologie sowie der Dicke der ersten Schicht abhängig sind. Basierend auf dieser Schicht wurde BaZrO3 als zusätzliche Pufferschicht für den Hochtemperatursupraleiter (HTSL) YBa2Cu3O7 ? untersucht. Unter Verwendung von SrTiO3 Substraten konnte die dielektrische Konstante von BaZrO3 zu ? ? 65 bestimmt sowie das Dispersionsverhalten mittels modifizierter Debye-Gleichungen erklärt werden. Vergleichende Messungen auf einkristallinen SrTiO3 Substraten zeigen eine erhöhte Übergangstemperatur von 90.2 K und eine wesentliche Verbesserung der Oberflächenrauhigkeit des HTSL von 2 nm (rms) durch die Verwendung von BaZrO3 Schichten hoher Qualität. Eine nur wenige Monolagen dicke zusätzliche BaZrO3 Pufferschicht auf YSZ-gepufferten Silizium Substraten verhindert die Ausbildung von ?9° rotierten YBCO Körnern, die üblicherweise bei der direkten Deposition auf YSZ beobachtet werden. Resistive Messungen mit Übergangstemperaturen oberhalb 89 K sind vergleichbar zu Ergebnissen, die für CeO2/YSZ Pufferschichtkombinationen erreicht werden. Durch kontinuierliche Gitteranpassung wurde eine neue Schichtabfolge YBCO/CeO2/YSZ/BaZrO3 für die Erzeugung bi-epitaxialer Korngrenzen-Josephson Kontake gefunden und deren Epitaxiebeziehungen geklärt. Eine in-situ deponierte Schichtabfolge zeigt mit einer Übergangstemperatur von 91.7 K und einer Übergangsbreite von 0.15 K supraleitende Eigenschaften vergleichbar zu den besten bisher auf diesem Gebiet erreichten Ergebnissen. Voruntersuchungen zur Realisierung eines Josephsonkontaktes mit dieser Schichtabfolge zeigen jedoch, daß die erreichten Eigenschaften für die technologische Anwendung nicht ausreichend sind.Die Verwendung einer YSZ/CeO2 Pufferschichtkombination ermöglicht die Herstellung von c Achsen orientiertem ferroelektrischem SrBi2Ta2O9 auf Silizium. Im Gegensatz hierzu führt die direkte Deposition auf Silizium zu polykristallinem SrBi2Ta2O9 oder zur Ausbildung der Pyrochlor Phase, wenn nur YSZ als Pufferschicht verwendet wird. Obwohl die Polarisierung von SrBi2Ta2O9 in der ab-Ebene liegt, konnte in MFIS Strukturen ein Speicherfenster von maximal 0.87 V beobachtet werden, was eine Verbesserung um nahezu einen Faktor drei im Vergleich zu polykristallinem SrBi2Ta2O9 bedeutet. Messungen an ferroelektrischen Kondesatorstrukturen ergeben Hystereseschleifen mit einer remanenten Polarisierung von Pr = 6.5 µC/cm2 sowie einem Koerzitivfeld von Ec = 35 kV/cm. AFM Messungen im Piezo-Response Modus zeigen ferroelektrische Domänen, die durch Anlegen einer Gleichspannung reversibel umpolarisiert werden können. Im Nicht-Kontakt AFM Modus wurde die lokale Polarisierung der Schichten zu 3.4 µC/cm2 bestimmt. Weiterhin wurde eine alternative Pufferschichtkombination SrZrO3/YSZ zur Erzeugung von a-Achsen orientiertem SrBi2Ta2O9 untersucht. SrZrO3 zeigt a Achsen Orientierung in vier Wachstumsdomänen, die durch ein Model erklärt werden können. Die SrBi2Ta2O9 Schicht zeigt a Achsen sowie (116)-orientierte Körner mit derselben Domänenstruktur. Die dielektrische Konstanten von SrZrO3 und SrBi2Ta2O9 wurden zu ? ? 29 und ? ? 20 bestimmt. Die beobachteten Speicherfenster sind allerdings nicht ferroelektrischer Natur, sondern wahrscheinlich durch mobile Ionen und Ladungsfangstellen in den Pufferschichten verursacht. Die stark abgesenkte dielektrische Konstante von SrBi2Ta2O9 kann durch die im Vergleich zu polykristallinem verkleinerte Korngröße erklärt werden.

Measurement of the drift field in the ARGONTUBE LAr TPC with 266 nm pulsed laser beams

ARGONTUBE is a liquid argon time projection chamber (LAr TPC) with a drift field generated in-situ by a Greinacher voltage multiplier circuit. We present results on the measurement of the drift-field distribution inside ARGONTUBE using straight ionization tracks generated by an intense UV laser beam. Our analysis is based on a simplified model of the charging of a multi-stage Greinacher circuit to describe the voltages on the field cage rings.

Quantifying pulsed laser induced damage to grapheme

As an emerging optical material, graphene’s ultrafast dynamics are often probed using pulsed lasers yet the region in which optical damage takes place is largely uncharted. Here, femtosecond laser pulses induced localized damage in single-layer graphene on sapphire. Raman spatial mapping, SEM, and AFM microscopy quantified the damage. The resulting size of the damaged area has a linear correlation with the optical fluence. These results demonstrate local modification of sp2-carbon bonding structures with optical pulse fluences as low as 14 mJ/cm2, an order-of-magnitude lower than measured and theoretical ablation thresholds.

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

All-fiber 250 MHz fundamental repetition rate pulsed laser with tilted fiber grating polarizer

We demonstrated a high fundamental repetition-rate pulsed erbium-doped fiber laser with all-fiber-integrated configuration. A novel scheme using a 45°-tilted fiber grating as the in-fiber polarizing element was employed to shorten the total cavity length and, thus, increase the fundamental repetition rate of the laser. Dissipative soliton pulses mode-locked with a fundamental repetition rate of 251.3 MHz and pulse duration of 96.7 fs have been achieved from the compact and all-fiber ring cavity laser. Additionally, passively Q-switched pulses were observed from this high fundamental repetition-rate fiber laser, which is the first report on Q-switched fiber laser using a tilted fiber grating.

Preliminary results in the development of a multi-colour pulsed laser for holography

Peer reviewed

Structure of PbTe(SiO(2))/SiO(2) multilayers deposited on Si(111)

The structure of thin films composed of a multilayer of PbTe nanocrystals embedded in SiO(2), named as PbTe(SiO(2)), between homogeneous layers of amorphous SiO(2) deposited on a single-crystal Si( 111) substrate was studied by grazing-incidence small-angle X-ray scattering (GISAXS) as a function of PbTe content. PbTe(SiO(2))/SiO(2) multilayers were produced by alternately applying plasma-enhanced chemical vapour deposition and pulsed laser deposition techniques. From the analysis of the experimental GISAXS patterns, the average radius and radius dispersion of PbTe nanocrystals were determined. With increasing deposition dose the size of the PbTe nanocrystals progressively increases while their number density decreases. Analysis of the GISAXS intensity profiles along the normal to the sample surface allowed the determination of the period parameter of the layers and a structure parameter that characterizes the disorder in the distances between PbTe layers. (C) 2010 International Union of Crystallography Printed in Singapore - all rights reserved

Optical properties and transport in PLD-GaN

We present structural, optical and transport data on GaN samples grown by hybrid, two-step low temperature pulsed laser deposition. The band gap of samples with good crystallinity has been deduced from optical spectra. Large below gap band tails were observed. In samples with the lowest crystalline quality the PL spectra are quite dependent on spot laser incidence. The most intense PL lines can be attributed to excitons bounded to stacking faults. When the crystalline quality of the samples is increased the ubiquitous yellow emission band can be detected following a quenching process described by a similar activation energy to that one found in MOCVD grown samples. The samples with the highest quality present, besides the yellow band, show a large near band edge emission which peaked at 3.47 eV and could be observed up to room temperature. The large width of the NBE is attributed to effect of a wide distribution of band tail states on the excitons. Photoconductivity data supports this interpretation.

Influence of growth temperature and carrier flux on the structure and transport properties of highly oriented CrO2 on Al2O3 (0001)

In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 degrees C, and oxygen carrier gas flow rates of 50-500 seem, showing that it is viable to grow highly oriented a-axis CrO2 films at temperatures as low as 330 degrees C i.e., 60-70 degrees C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass-transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 degrees C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.

Phase growth control in low temperature PLD Co: TiO2 films by pressure

This paper reports on the structural and optical properties of Co-doped TiO2 thin films grown onto (0001)Al2O3 substrates by non-reactive pulsed laser deposition (PLD) using argon as buffer gas. It is shown that by keeping constant the substrate temperature at as low as 310 degrees C and varying only the background gas pressure between 7 Pa and 70 Pa, it is possible to grow either epitaxial rutile or pure anatase thin films, as well as films with a mixture of both polymorphs. The optical band gaps of the films are red shifted in comparison with the values usually reported for undoped TiO2, which is consistent with n-type doping of the TiO2 matrix. Such band gap red shift brings the absorption edge of the Co-doped TiO2 films into the visible region, which might favour their photocatalytic activity. Furthermore, the band gap red shift depends on the films' phase composition, increasing with the increase of the Urbach energy for increasing rutile content. (C) 2012 Elsevier B.V. All rights reserved.