Malin-Warner 230 kV transmission line construction (OR,CA), environmental assessment (EA), Finding of no significant impact (FONSI).

Mode of access: Internet.

Environmental assessment using remotely sensed data : application of remote sensing data to environmental impact studies for transmission line routes /

Mode of access: Internet.

Design considerations for multilayer transmission line circuit boards.

Issued also as thesis (M.S.) University of Illinois.

An application of intercoupled-transmission-line-amplifier /

"November 1, 1965."

Design of alternating-current apparatus, electric transmission, line construction, switchboards and switchboard appliances, power transformation and measurement.

Various paging.

Characterization and modeling of multi-conductor transmission line using Finite-difference Time-Domain method

A two-dimensional, 2D, finite-difference time-domain (FDTD) method is used to analyze two different models of multi-conductor transmission lines (MTL). The first model is a two-conductor MTL and the second is a threeconductor MTL. Apart from the MTL's, a three-dimensional, 3D, FDTD method is used to analyze a three-patch microstrip parasitic array. While the MTL analysis is entirely in time-domain, the microstrip parasitic array is a study of scattering parameter Sn in the frequency-domain. The results clearly indicate that FDTD is an efficient and accurate tool to model and analyze multiconductor transmission line as well as microstrip antennas and arrays.

Kalibrointimenetelmä planaaristen siirtojohtojen mittaamiseen

Tässä diplomityössä tutkittiin TRL-kalibroinnin käyttämistä tasomaisten siirtojohtojen sähköisten parametrien määrittämisessä taajuusalueella 0,3 – 12 GHz. Työssä perehdyttiin TRL-kalibroinnin käyttämiseen piirianalysaattorilla toteutettujen mittauksien mittauskalibrointiin sekä kalibrointiin tarvittavien kalibrointistandardien mitoittamiseen. Kalibrointistandardit suunniteltiin ja toteutettiin sekä mikroliuska- että liuskajohdoille, joiden toiminnallisuutta tarkasteltiin sekä taajuustason että aikatason mittausten avulla. Työssä perehdyttiin myös kalibrointistandardien liityntärajapinnan suunniteluun ja toteuttamiseen. Saatujen tulosten perusteella voitiin osoittaa mikroliuskajohtokitin soveltuvan hyvin mittauskalibroinnin toteuttamiseen tarkoissa mittaussovelluksissa.

Enhancement of Microwave Properties of Planar Filters and Antennas using Photonic Bandgap (PBG) Structures

In this thesis, we explore the design, computation, and experimental analysis of photonic crystals, with a special emphasis on structures and devices that make a connection with practically realizable systems. First, we analyze the propenies of photonic-crystal: periodic dielectric structures that have a band gap for propagation. The band gap of periodically loaded air column on a dielectric substrate is computed using Eigen solvers in a plane wave basis. Then this idea is extended to planar filters and antennas at microwave regime. The main objectives covered in this thesis are:• Computation of Band Gap origin in Photonic crystal with the abet of Maxwell's equation and Bloch-Floquet's theorem • Extension of Band Gap to Planar structures at microwave regime • Predict the dielectric constant - synthesized dieletric cmstant of the substrates when loaded with Photonic Band Gap (PBG) structures in a microstrip transmission line • Identify the resonant characteristic of the PBG cell and extract the equivalent circuit based on PBG cell and substrate parameters for microstrip transmission line • Miniaturize PBG as Defected Ground Structures (DGS) and use the property to be implemented in planar filters with microstrip transmission line • Extended the band stop effect of PBG / DGS to coplanar waveguide and asymmetric coplanar waveguide. • Formulate design equations for the PBG / DGS filters • Use these PBG / DGS ground plane as ground plane of microstrip antennas • Analysis of filters and antennas using FDID method

“Design and Development of Coplanar Strip Fed Planar Antennas”

With the recent progress and rapid increase in the field of communication, the designs of antennas for small mobile terminals with enhanced radiation characteristics are acquiring great importance. Compactness, efficiency, high data rate capacity etc. are the major criteria for the new generation antennas. The challenging task of the microwave scientists and engineers is to design a compact printed radiating structure having broadband behavior along with good efficiency and enhanced gain. Printed antenna technology has received popularity among antenna scientists after the introduction of planar transmission lines in mid-seventies. When we view the antenna through a transmission line concept, the mechanism behind any electromagnetic radiator is quite simple and interesting. Any electromagnetic system with a discontinuity is radiating electromagnetic energy. The size, shape and orientation of the discontinuities control the radiation characteristics of the system such as radiation pattern, gain, polarization etc. It can be either resonant or non-resonant. This thesis deals with antennas that are developed from a class of transmission lines known as coplanar strip-CPS, a planar analogy of parallel pair transmission line. The specialty of CPS is its symmetric structure compared to other transmission lines, which makes the antenna structures developed from CPS quite simple for design and fabrication. The structural modifications on either metallic strip of CPS results in different antennas. The first part of the thesis discusses a single band and dual band design derived from open ended slot lines which are very much suitable for 2.4 and 5.2 GHz WLAN applications. The second section of the study is vectored into the development of enhanced gain dipoles. A single band dipole and a wide band enhanced gain dipole suitable for 5.2/5.8 GHZ band and imaging applications are developed and discussed. Last part of the thesis discusses the development of directional UWBs. Three different types of ultra-compact UWBs are developed and almost all the frequency domain and time domain analysis of the structures are discussed.

Uma nova proposta de antena planar multibanda para comunicações móveis

The great interest observed in wireless communication systems has required the development of new configurations of microstrip antennas, because they are easily built and integrated to other microwave circuit components, which is suitable for the construction and development of planar antenna arrays and microwave integrated circuits. This work presents a new configuration of tapered microstrip antenna, which is obtained by impressing U-slots on the conducting patch combined with a transmission line matching circuit that uses an inset length. It is shown that the use of U-slots in the microstrip antenna conducting patch excites new resonating modes, that gives a multiband characteristic for the slotted microstrip antenna, that is suitable for applications in communication systems that operates several frequencies simultaneously. Up to this date, the works reported in the literature deals with the use of Uslotted microstrip rectangular antennas fed by a coaxial probe. The properties of a linear array of microstrip patch tapered antennas are also investigated. The main parameters of the U slotted tapered microstrip antennas are investigated for different sizes and locations of the slots impressed on the conducting patch. The analysis of the proposed antenna is performed by using the resonant cavity and equivalent transmission line methods, in combination with a parametric study, that is conducted by the use of the Ansoft Designer, a commercial computer aided microwave software well known by its accuracy and efficiency. The mentioned methods are used to evaluate the effect in the antennas parameters, like resonant frequency and return loss, produced by variations of the antenna structural parameters, accomplished separately or simultaneously. An experimental investigation is also developed, that consists of the design, construction and measurement of several U slotted microstrip antenna prototypes. Finally, theoretical and simulated results are presented that are in agreement with the measured ones. These results are related to the resonating modes identification and to the determination of the main characteristics of the investigated antennas, such as resonant frequency, return loss, and radiation pattern

Using Universal Line Model (ULM) for Representing Electromagnetic Transients in Three-Phase Transmission Lines

The second-order differential equations that describe the polyphase transmission line are difficult to solve due to the mutual coupling among them and the fact that the parameters are distributed along their length. A method for the analysis of polyphase systems is the technique that decouples their phases. Thus, a system that has n phases coupled can be represented by n decoupled single-phase systems which are mathematically identical to the original system. Once obtained the n-phase circuit, it's possible to calculate the voltages and currents at any point on the line using computational methods. The Universal Line Model (ULM) transforms the differential equations in the time domain to algebraic equations in the frequency domain, solve them and obtain the solution in the frequency domain using the inverse Laplace transform. This work will analyze the method of modal decomposition in a three-phase transmission line for the evaluation of voltages and currents of the line during the energizing process.

Fractal PBG assisted co-planar waveguides

In general, conventional electromagnetic bandgap (PBGs) with uniform distribution show spurious ripples in pass-band and poor stop-band responses. This paper presents a detailed investigation in terms of pass-band and stop-band characteristics of uniplanar transmission line loaded with fractal shape PBGs. (c) 2005 Wiley Periodicals, Inc.

Optical regeneration at 40 Gb/s in dispersion-managed transmission lines with in-line synchronous modulators

Numerical optimization is performed of the 40-Gb/s dispersion-managed (DM) soliton transmission system with in-line synchronous intensity modulation. Stability of DM soliton transmission results from a combined action of dispersion, nonlinearity, in-line filtering, and modulation through effective periodic bandwidth management of carrier pulses. Therefore, analysis of the multiparametric problem is typically required. A two-stage time-saving numerical optimization procedure is applied. At the first step, the regions of the stable carrier propagation are determined using theoretical models available for DM solitons, and system parameters are optimized. At the second stage, full numerical simulations are undertaken in order to verify the tolerance of optimal transmission regimes. An approach developed demonstrates feasibility of error-free transmission over 20 000 km in a transmission line composed of standard fiber and dispersion compensation fiber at 40 Gb/s.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.