1000 resultados para nucleation mode


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Mode I fracture experiments were conducted on brittle bulk metallic glass (BMG) samples and the fracture surface features were analyzed in detail to understand the underlying physical processes. Wollner lines, which result from the interaction between the propagating crack front and shear waves emanating from a secondary source, were observed on the fracture surface and geometric analysis of them indicates that the maximum crack velocity is similar to 800 m s(-1), which corresponds to similar to 0.32 times the shear wave speed. Fractography reveals that the sharp crack nucleation at the notch tip occurs at the mid-section of the specimens with the observation of flat and half-penny-shaped cracks. On this basis, we conclude that the crack initiation in brittle BMGs is stress-controlled and occurs through hydrostatic stress-assisted cavity nucleation ahead of the notch tip. High magnification scanning electron and atomic force microscopies of the dynamic crack growth regions reveal highly organized, nanoscale periodic patterns with a spacing of similar to 79 nm. Juxtaposition of the crack velocity with this spacing suggests that the crack takes similar to 10(-10) s for peak-to-peak propagation. This, and the estimated adiabatic temperature rise ahead of the propagating crack tip that suggests local softening, is utilized to critically discuss possible causes for the nanocorrugation formation. Taylor's fluid meniscus instability is unequivocally ruled out. Then, two other possible mechanisms, viz. (a) crack tip blunting and resharpening through nanovoid nucleation and growth ahead of the crack tip and eventual coalescence, and (b) dynamic oscillation of the crack in a thin slab of softened zone ahead of the crack-tip, are critically discussed. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Solder joints in electronic packages undergo thermo-mechanical cycling, resulting in nucleation of micro-cracks, especially at the solder/bond-pad interface, which may lead to fracture of the joints. The fracture toughness of a solder joint depends on material properties, process conditions and service history, as well as strain rate and mode-mixity. This paper reports on a methodology for determining the mixed-mode fracture toughness of solder joints with an interfacial starter-crack, using a modified compact mixed mode (CMM) specimen containing an adhesive joint. Expressions for stress intensity factor (K) and strain energy release rate (G) are developed, using a combination of experiments and finite element (FE) analysis. In this methodology, crack length dependent geometry factors to convert for the modified CMM sample are first obtained via the crack-tip opening displacement (CTOD)-based linear extrapolation method to calculate the under far-field mode I and II conditions (f(1a) and f(2a)), (ii) generation of a master-plot to determine a(c), and (iii) computation of K and G to analyze the fracture behavior of joints. The developed methodology was verified using J-integral calculations, and was also used to calculate experimental fracture toughness values of a few lead-free solder-Cu joints. (C) 2014 Elsevier Ltd. All rights reserved.

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A recoverable plate impact testing technology has been developed for studying fracture mechanisms of mode II crack. With this technology, a single duration stress pulse with submicrosecond duration and high loading rates, up to 10(8) MPam(1/2)s(-1), can be produced. Dynamic failure tests of Hard-C 60# steel were carried out under asymmetrical impacting conditions with short stress-pulse loading. Experimental results show that the nucleation and growth of several microcracks ahead of the crack tip, and the interactions between them, induce unsteady crack growth. Failure mode transitions during crack growth, both from mode I crack to mode II and from brittle to ductile fracture, were observed. Based on experimental observations, a discontinuous crack growth model was established. Analysis of the crack growth mechanisms using our model shows that the shear crack extension is unsteady when the extending speed is between the Rayleigh wave speed c(R) and the shear wave speed c(S). However, when the crack advancing speed is beyond c(S), the crack grows at a steady intersonic speed approaching root 2c(S). It also shows that the transient mechanisms, such as nucleation, growth, interaction and coalescence among microcracks, make the main crack speed jump from subsonic to intersonic and the steady growth of all the subcracks causes the main crack to grow at a stable intersonic speed.

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Part I

Particles are a key feature of planetary atmospheres. On Earth they represent the greatest source of uncertainty in the global energy budget. This uncertainty can be addressed by making more measurement, by improving the theoretical analysis of measurements, and by better modeling basic particle nucleation and initial particle growth within an atmosphere. This work will focus on the latter two methods of improvement.

Uncertainty in measurements is largely due to particle charging. Accurate descriptions of particle charging are challenging because one deals with particles in a gas as opposed to a vacuum, so different length scales come into play. Previous studies have considered the effects of transition between the continuum and kinetic regime and the effects of two and three body interactions within the kinetic regime. These studies, however, use questionable assumptions about the charging process which resulted in skewed observations, and bias in the proposed dynamics of aerosol particles. These assumptions affect both the ions and particles in the system. Ions are assumed to be point monopoles that have a single characteristic speed rather than follow a distribution. Particles are assumed to be perfect conductors that have up to five elementary charges on them. The effects of three body interaction, ion-molecule-particle, are also overestimated. By revising this theory so that the basic physical attributes of both ions and particles and their interactions are better represented, we are able to make more accurate predictions of particle charging in both the kinetic and continuum regimes.

The same revised theory that was used above to model ion charging can also be applied to the flux of neutral vapor phase molecules to a particle or initial cluster. Using these results we can model the vapor flux to a neutral or charged particle due to diffusion and electromagnetic interactions. In many classical theories currently applied to these models, the finite size of the molecule and the electromagnetic interaction between the molecule and particle, especially for the neutral particle case, are completely ignored, or, as is often the case for a permanent dipole vapor species, strongly underestimated. Comparing our model to these classical models we determine an “enhancement factor” to characterize how important the addition of these physical parameters and processes is to the understanding of particle nucleation and growth.

Part II

Whispering gallery mode (WGM) optical biosensors are capable of extraordinarily sensitive specific and non-specific detection of species suspended in a gas or fluid. Recent experimental results suggest that these devices may attain single-molecule sensitivity to protein solutions in the form of stepwise shifts in their resonance wavelength, \lambda_{R}, but present sensor models predict much smaller steps than were reported. This study examines the physical interaction between a WGM sensor and a molecule adsorbed to its surface, exploring assumptions made in previous efforts to model WGM sensor behavior, and describing computational schemes that model the experiments for which single protein sensitivity was reported. The resulting model is used to simulate sensor performance, within constraints imposed by the limited material property data. On this basis, we conclude that nonlinear optical effects would be needed to attain the reported sensitivity, and that, in the experiments for which extreme sensitivity was reported, a bound protein experiences optical energy fluxes too high for such effects to be ignored.

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Some differences were observed between conventional molecular-beam epitaxy (MBE) and mobility enhanced epitaxy (MEE) of InAs on a vicinal GaAs(001) substrate in the variation of the number density N of the InAs islands, with additional InAs coverage (theta - theta(c)) after the critical InAs coverage theta(c) during the two- to three-dimensional (2D-3D) transition. For MBE the variation was consistent with the power law N(theta) (theta similar to theta(c))(alpha); while for MEE, the linear relation N(theta) proportional to (theta - theta(c)) was observed. The difference is discussed in terms of the randomness in the nucleation of the InAs islands.

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Epitaxial growth of InN on GaN(0001) by plasma-assisted molecular-beam epitaxy is investigated over a range of growth parameters including source flux and substrate temperature. Combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM), we establish a relationship between film growth mode and the deposition condition. Both two-dimensional (2D) and three-dimensional (3D) growth modes of the film are observed. For 2D growth, sustained RHEED intensity oscillations are recorded while STM reveals 2D nucleation islands. For 3D growth, less than three oscillation periods are observed indicating the Stranski-Krastanov (SK) growth mode of the film. Simultaneous measurements of (reciprocal) lattice constant by RHEED suggest a gradual relaxation of the strain in film, which commences during the first bilayer (BL) deposition and almost completes after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations, so the islands are likely strain free. (C) 2002 American Institute of Physics.

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Thick GaN films were grown on sapphire in a home-made vertical HVPE reactor. Effect of nucleation treatments on the properties of GaN films was investigated, including the nitridation of sapphire, low temperature GaN buffer and MOCVD-template. Various material characterization techniques, including AFM, SEM, XRD, CL and PL have been used to assess these GaN epitaxial films. It was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. In addition, smooth Ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. This may be caused by the atoms re-arrangement because of oxidation. The roughness of N-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. The low temperature GaN buffer gown at 650 degrees C is favorable for subsequent epitaxial film, which had narrow FWHM of 307 arcsec. The epitaxial growth on MOCVD-template directly came into quasi-2D growth mode due to enough nucleation centers, and high quality GaN films were acquired with the values of the FWHM of 141 arcsec for (002) reflections. After etching in boiled KOH, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. The photoluminescence spectrum of GaN film on the MOCVD-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.

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The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

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La vie commence par la fusion des gamètes pour générer un zygote, dans lequel les constituants à la fois de l'ovocyte et des spermatozoïdes sont partagés au sein d'un syncytium. Le syncytium consiste en des cellules ou tissus dans lesquels des cellules nucléées individuelles distinctes partagent un cytoplasme commun. Alors que l’avantage du syncytium durant la fécondation est tout à fait évident, les syncytia se produisent également dans de nombreux contextes de développement différents dans les plantes, les champignons et dans le règne animal, des insectes aux humains, pour des raisons qui ne sont pas immédiatement évidentes. Par exemple, la lignée germinale de nombreuses espèces de vertébrés et d'invertébrés, des insectes aux humains, présente une structure syncytiale, suggérant que les syncytia constituent des phases conservées de développement de la lignée germinale. Malgré la prévalence commune des syncytia, ces derniers ont cependant confondu les scientifiques depuis des décennies avec des questions telles que la façon dont ils sont formés et maintenus en concurrence avec leurs homologues diploïdes, et quels sont les avantages et les inconvénients qu'ils apportent. Cette thèse va décrire l'utilisation de la lignée germinale syncytiale de C. elegans afin d'approfondir notre compréhension de l'architecture, la fonction et le mode de formation des tissus syncytiaux. Les cellules germinales (CGs) dans la lignée germinale de C. elegans sont interconnectées les unes aux autres par l'intermédiaire de structures appelées des anneaux de CG. En utilisant l'imagerie des cellules vivantes, nous avons d'abord analysé l'architecture syncytiale de la lignée germinale au long du développement et démontré que la maturation de l'anneau de CG se produit progressivement au cours de la croissance des larves et que les anneaux de CG sont composés de myosine II, de l'anilline canonique ANI-1, et de la courte isoforme d’anilline ANI-2, qui n'a pas les domaines de liaison à l’actine et à la myosine, depuis le premier stade larvaire, L1. Parmi les composants de l'anneau de CG, ANI-2 est exprimé au cours du développement et exclusivement enrichi entre les deux CGs primordiales (CGPs) au cours de l'embryogenèse de C. elegans, indiquant qu’ANI-2 est un composant bona fide des anneaux de CG. Nous avons en outre montré que les anneaux de CG sont largement absents dans les animaux mutants pour ani-2, montrant que leur maintien repose sur l'activité d'ANI-2. Contrairement à cela, nous avons trouvé que la déplétion d’ANI-1 a augmenté à la fois le diamètre des anneaux de CG et la largeur du rachis. Fait intéressant, la déplétion d’ANI-1 dans les mutants d’ani-2 a sauvé les défauts d'anneaux de CG des gonades déficientes en ani-2, ce qui suggère que l'architecture syncytiale de la lignée germinale de C. elegans repose sur un équilibre de l'activité de ces deux protéines Anilline. En outre, nous avons montré que lors de leur entrée à l'âge adulte, les mutants ani-2 présentent de sévères défauts de multinucléation des CGs qui découlent de l'effondrement des membranes de séparation des CGs individuelles. Cette multinucléation a coïncidé avec le début de la diffusion cytoplasmique, dont le blocage réduit la multinucléation des gonades mutantes pour ani-2, suggérant que les anneaux de CG résistent au stress mécanique associé au processus de diffusion cytoplasmique. En accord avec cela, nous avons trouvé aussi que la gonade peut soutenir la déformation élastique en réponse au stress mécanique et que cette propriété repose sur la malléabilité des anneaux de CGs. Dans une étude séparée afin de comprendre le mécanisme de formation du syncytium, nous avons suivi la dynamique de division de la cellule précurseur de la lignée germinale, P4 en deux CGP dans l’embryon de C. elegans. Nous avons démontré que les CGPs commencent la cytocinèse de manière similaire aux cellules somatiques, en formant un sillon de clivage, qui migre correctement et transforme ainsi l'anneau contractile en anneau de « midbody ring » (MBR), une structure qui relie de manière transitoire les cellules en division. Malgré cela, les CGPs, contrairement à leurs homologues somatiques, ne parviennent pas à accomplir la dernière étape de la cytocinèse, qui est la libération abscission-dépendante du MBR. Au lieu de cela, le MBR persiste à la frontière entre les CGPs en division et subit une réorganisation et une maturation pour se transformer finalement en structures en forme d'anneau qui relient les cellules en division. Nous montrons en outre que les composants du MB/MBR; UNC-59Septin, CYK-7, ZEN-4Mklp1, RHO-1RhoA sont localisés à des anneaux de CG au long du développement de la lignée germinale du stade L1 à l'âge adulte, ce qui suggère que les anneaux de CG sont dérivés des MBR. Bien qu'il reste encore beaucoup à faire pour comprendre pleinement le mécanisme précis de la formation du syncytium, le maintien, ainsi que la fonction du syncytium, nos résultats appuient un modèle dans lequel la stabilisation du MBR et la cytocinèse incomplète pourraient être une option conservée dans l’évolution pour la formation du syncytium. En outre, notre travail démontre que les régulateurs de la contractilité peuvent jouer un rôle dans la maturation et l’élasticité de l'anneau de CG au cours du développement de la lignée germinale, fournissant un ajout précieux pour une plus ample compréhension de la syncytiogenèse et de sa fonction.

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The Hadley Centre Global Environmental Model (HadGEM) includes two aerosol schemes: the Coupled Large-scale Aerosol Simulator for Studies in Climate (CLASSIC), and the new Global Model of Aerosol Processes (GLOMAP-mode). GLOMAP-mode is a modal aerosol microphysics scheme that simulates not only aerosol mass but also aerosol number, represents internally-mixed particles, and includes aerosol microphysical processes such as nucleation. In this study, both schemes provide hindcast simulations of natural and anthropogenic aerosol species for the period 2000–2006. HadGEM simulations of the aerosol optical depth using GLOMAP-mode compare better than CLASSIC against a data-assimilated aerosol re-analysis and aerosol ground-based observations. Because of differences in wet deposition rates, GLOMAP-mode sulphate aerosol residence time is two days longer than CLASSIC sulphate aerosols, whereas black carbon residence time is much shorter. As a result, CLASSIC underestimates aerosol optical depths in continental regions of the Northern Hemisphere and likely overestimates absorption in remote regions. Aerosol direct and first indirect radiative forcings are computed from simulations of aerosols with emissions for the year 1850 and 2000. In 1850, GLOMAP-mode predicts lower aerosol optical depths and higher cloud droplet number concentrations than CLASSIC. Consequently, simulated clouds are much less susceptible to natural and anthropogenic aerosol changes when the microphysical scheme is used. In particular, the response of cloud condensation nuclei to an increase in dimethyl sulphide emissions becomes a factor of four smaller. The combined effect of different 1850 baselines, residence times, and abilities to affect cloud droplet number, leads to substantial differences in the aerosol forcings simulated by the two schemes. GLOMAP-mode finds a presentday direct aerosol forcing of −0.49Wm−2 on a global average, 72% stronger than the corresponding forcing from CLASSIC. This difference is compensated by changes in first indirect aerosol forcing: the forcing of −1.17Wm−2 obtained with GLOMAP-mode is 20% weaker than with CLASSIC. Results suggest that mass-based schemes such as CLASSIC lack the necessary sophistication to provide realistic input to aerosol-cloud interaction schemes. Furthermore, the importance of the 1850 baseline highlights how model skill in predicting present-day aerosol does not guarantee reliable forcing estimates. Those findings suggest that the more complex representation of aerosol processes in microphysical schemes improves the fidelity of simulated aerosol forcings.

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Based on the Johnson-Mehl-Avrami-Kolmogorov (JMAK) theory, we propose two new models to describe the crystallisation kinetics of glass particles and use them to determine the density of nucleation sites, N(s), on glass powders. We tested these models with sintered compacts of diopside glass particles using sinter-crystallisation treatments at 825 degrees C (T(g)similar to 727 degrees C), that covered from null to almost 100% crystallised volume time fraction. We measured and compared the evolution of the crystallised volume fractions by optical microscopy and x-ray diffraction. Then we fit our expressions to experimental data using Ns and R (the average particle radius) as adjustable parameters. For comparison, we also fit to our data existing expressions that describe the crystallised volume fraction in glass powders. We demonstrate that all the methods allow one to estimate N(s) with reasonable accuracy. For our ground and water washed diopside glass powder, N(s) is between 10(10)-10(11) sites.m(-2). The reasonable agreement between experimental and adjusted R confirms the consistency of all five models tested. However, one of our equations does not require taking into account the change of crystallisation mode from 3-dimensional to 1-dimensional, and this is advantageous.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.

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Experimental evidence is presented which proves that voids formed during diffusion in brass are heterogeneously nucleated. The nuclei appear to be oxide particles, probably ZnO. When these are removed by re-melting, voids practically do not form upon subsequent dezincification. Brass which had been freed of void nucleation catalysts exhibited a considerably reduced tendency for grain boundary cracking during creep, and increased stress-rupture life.

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Mode of access: Internet.