Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.

Enhanced external radiative efficiency for 20.8 efficient single-junction GaInP solar cells

We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction.

Case study in failure analysis of accelerated life tests (ALT) on III-V commercial triple-junction concentrator solar cells

In this work the failure analysis carried out in III-V concentrator multijunction solar cells after a temperature accelerated life test is presented. All the failures appeared have been catastrophic since all the solar cells turned into low shunt resistances. A case study in failure analysis based on characterization by optical microscope, SEM, EDX, EQE and XPS is presented in this paper, revealing metal deterioration in the bus bar and fingers as well as cracks in the semiconductor structure beneath or next to the bus bar. In fact, in regions far from the bus bar the semiconductor structure seems not to be damaged. SEM images have dismissed the presence of metal spikes inside the solar cell structure. Therefore, we think that for these particular solar cells, failures appear mainly as a consequence of a deficient electrolytic growth of the front metallization which also results in failures in the semiconductor structure close to the bus bars.

Effect of field damping layer on two step absorption of quantum dots solar cells

Multi-stacked InAs/AlGaAs quantum dot solar cells (QDSCs) introduced with field damping layers (FDL) which sustain the junction built-in potential have been studied. Without an external bias condition, the external quantum efficiency (EQE) of QD layers are reduced by introducing the thick FDL, because the carrier escape due to built-in electric field was suppressed. On the other hand, the photocurrent production due to two-step absorption is increased by the formation of flat-band QD structure for QDSC with thick FDL.

Component integration strategies in metamorphic 4-junction III-V concentrator solar cells

Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers.

Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance

In this work, we explain the behavior of multijunction solar cells under non-uniform (spatially and in spectral content) light profiles in general and in particular when Gaussian light profiles cause a photo-generated current density, which exceeds locally the peak current density of the tunnel junction. We have analyzed the implications on the tunnel junction's limitation, that is, in the loss of efficiency due to the appearance of a dip in the I–V curve. For that, we have carried out simulations with our three-dimensional distributed model for multijunction solar cells, which contemplates a full description of the tunnel junction and also takes into account the lateral resistances in the tunnel junction. The main findings are that the current density photo-generated spreads out through the lateral resistances of the device, mainly through the tunnel junction layers and the back contact. Therefore, under non-uniform light profiles these resistances are determinant not only to avoid the tunnel junction's limitation but also for mitigating losses in the fill factor. Therefore, taking into account these lateral resistances could be the key for jointly optimizing the concentrator photovoltaic system (concentrator optics, front grid layout and semiconductor structure)

Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation

Microcrystalline silicon is a two-phase material. Its composition can be interpreted as a series of grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of dangling bonds in the transition regions. In this paper, results for the transport properties of a mu c-Si:H p-i-n junction obtained by means of two-dimensional numerical simulation are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken into account and these regions are treated similar to a heterojunction interface. The device is analysed under AM1.5 illumination and the paper outlines the influence of the local electric field at the grain boundary transition regions on the internal electric configuration of the device and on the transport mechanism within the mu c-Si:H intrinsic layer.

A comparison between thin film solar cells made from co-evaporated CuIn1-xGaxSe2using a one-stage process versus a three-stage process

Until this day, the most efficient Cu(In,Ga)Se2 thin film solar cells have been prepared using a rather complex growth process often referred to as three-stage or multistage. This family of processes is mainly characterized by a first step deposited with only In, Ga and Se flux to form a first layer. Cu is added in a second step until the film becomes slightly Cu-rich, where-after the film is converted to its final Cu-poor composition by a third stage, again with no or very little addition of Cu. In this paper, a comparison between solar cells prepared with the three-stage process and a one-stage/in-line process with the same composition, thickness, and solar cell stack is made. The one-stage process is easier to be used in an industrial scale and do not have Cu-rich transitions. The samples were analyzed using glow discharge optical emission spectroscopy, scanning electron microscopy, X-ray diffraction, current–voltage-temperature, capacitance-voltage, external quantum efficiency, transmission/reflection, and photoluminescence. It was concluded that in spite of differences in the texturing, morphology and Ga gradient, the electrical performance of the two types of samples is quite similar as demonstrated by the similar J–V behavior, quantum spectral response, and the estimated recombination losses.

Advanced Numerical Simulation of Silicon-Based Solar Cells

Photovoltaic (PV) conversion is the direct production of electrical energy from sun without involving the emission of polluting substances. In order to be competitive with other energy sources, cost of the PV technology must be reduced ensuring adequate conversion efficiencies. These goals have motivated the interest of researchers in investigating advanced designs of crystalline silicon solar (c-Si) cells. Since lowering the cost of PV devices involves the reduction of the volume of semiconductor, an effective light trapping strategy aimed at increasing the photon absorption is required. Modeling of solar cells by electro-optical numerical simulation is helpful to predict the performance of future generations devices exhibiting advanced light-trapping schemes and to provide new and more specific guidelines to industry. The approaches to optical simulation commonly adopted for c-Si solar cells may lead to inaccurate results in case of thin film and nano-stuctured solar cells. On the other hand, rigorous solvers of Maxwell equations are really cpu- and memory-intensive. Recently, in optical simulation of solar cells, the RCWA method has gained relevance, providing a good trade-off between accuracy and computational resources requirement. This thesis is a contribution to the numerical simulation of advanced silicon solar cells by means of a state-of-the-art numerical 2-D/3-D device simulator, that has been successfully applied to the simulation of selective emitter and the rear point contact solar cells, for which the multi-dimensionality of the transport model is required in order to properly account for all physical competing mechanisms. In the second part of the thesis, the optical problems is discussed. Two novel and computationally efficient RCWA implementations for 2-D simulation domains as well as a third RCWA for 3-D structures based on an eigenvalues calculation approach have been presented. The proposed simulators have been validated in terms of accuracy, numerical convergence, computation time and correctness of results.

Efficiency limits for silicon/perovskite tandem solar cells: a theoretical model

The primary goal of this work is related to the extension of an analytic electro-optical model. It will be used to describe single-junction crystalline silicon solar cells and a silicon/perovskite tandem solar cell in the presence of light-trapping in order to calculate efficiency limits for such a device. In particular, our tandem system is composed by crystalline silicon and a perovskite structure material: metilammoniumleadtriiodide (MALI). Perovskite are among the most convenient materials for photovoltaics thanks to their reduced cost and increasing efficiencies. Solar cell efficiencies of devices using these materials increased from 3.8% in 2009 to a certified 20.1% in 2014 making this the fastest-advancing solar technology to date. Moreover, texturization increases the amount of light which can be absorbed through an active layer. Using Green’s formalism it is possible to calculate the photogeneration rate of a single-layer structure with Lambertian light trapping analytically. In this work we go further: we study the optical coupling between the two cells in our tandem system in order to calculate the photogeneration rate of the whole structure. We also model the electronic part of such a device by considering the perovskite top cell as an ideal diode and solving the drift-diffusion equation with appropriate boundary conditions for the silicon bottom cell. We have a four terminal structure, so our tandem system is totally unconstrained. Then we calculate the efficiency limits of our tandem including several recombination mechanisms such as Auger, SRH and surface recombination. We focus also on the dependence of the results on the band gap of the perovskite and we calculare an optimal band gap to optimize the tandem efficiency. The whole work has been continuously supported by a numerical validation of out analytic model against Silvaco ATLAS which solves drift-diffusion equations using a finite elements method. Our goal is to develop a simpler and cheaper, but accurate model to study such devices.

Theoretical estimation of optical absorption and photoluminescence in nanostructured silicon; an approach to improve efficiency in nanostructured solar cells

Renewable energy is growing in demand, and thus the the manufacture of solar cells and photovoltaic arrays has advanced dramatically in recent years. This is proved by the fact that the photovoltaic production has doubled every 2 years, increasing by an average of 48% each year since 2002. Covering the general overview of solar cell working, and its model, this thesis will start with the three generations of photovoltaic solar cell technology, and move to the motivation of dedicating research to nanostructured solar cell. For the current generation solar cells, among several factors, like photon capture, photon reflection, carrier generation by photons, carrier transport and collection, the efficiency also depends on the absorption of photons. The absorption coefficient,α, and its dependence on the wavelength, λ, is of major concern to improve the efficiency. Nano-silicon structures (quantum wells and quantum dots) have a unique advantage compared to bulk and thin film crystalline silicon that multiple direct and indirect band gaps can be realized by appropriate size control of the quantum wells. This enables multiple wavelength photons of the solar spectrum to be absorbed efficiently. There is limited research on the calculation of absorption coefficient in nano structures of silicon. We present a theoretical approach to calculate the absorption coefficient using quantum mechanical calculations on the interaction of photons with the electrons of the valence band. One model is that the oscillator strength of the direct optical transitions is enhanced by the quantumconfinement effect in Si nanocrystallites. These kinds of quantum wells can be realized in practice in porous silicon. The absorption coefficient shows a peak of 64638.2 cm-1 at = 343 nm at photon energy of ξ = 3.49 eV ( = 355.532 nm). I have shown that a large value of absorption coefficient α comparable to that of bulk silicon is possible in silicon QDs because of carrier confinement. Our results have shown that we can enhance the absorption coefficient by an order of 10, and at the same time a nearly constant absorption coefficient curve over the visible spectrum. The validity of plots is verified by the correlation with experimental photoluminescence plots. A very generic comparison for the efficiency of p-i-n junction solar cell is given for a cell incorporating QDs and sans QDs. The design and fabrication technique is discussed in brief. I have shown that by using QDs in the intrinsic region of a cell, we can improve the efficiency by a factor of 1.865 times. Thus for a solar cell of efficiency of 26% for first generation solar cell, we can improve the efficiency to nearly 48.5% on using QDs.

Voltage recovery in intermediate band solar cells

The intermediate band solar cell (IBSC) is based on a novel photovoltaic concept and has a limiting efficiency of 63.2%, which compares favorably with the 40.7% efficiency of a conventional, single junction solar cell. It is characterized by a material hosting a collection of energy levels within its bandgap, allowing the cell to exploit photons with sub-bandgap energies in a two-step absorption process, thus improving the utilization of the solar spectrum. However, these intermediate levels are often regarded as an inherent source of supplementary recombination, although this harmful effect can in theory be counteracted by the use of concentrated light. We present here a novel, low-temperature characterization technique using concentrated light that reveals how the initially enhanced recombination in the IBSC is reduced so that its open-circuit voltage is completely recovered and reaches that of a conventional solar cell.

Effect of concentration on the performance of quantum dot intermediate-band solar cells

Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy.

Structural challenges in multijunction solar cells for ultra-high CPV

The paths towards high efficiency multijunction solar cells operating inside real concentrators at ultra high concentration (>1000 suns) are described. The key addressed factors comprehend: 1) the development of an optimized tunnel junction with a high peak current density (240 A/cm2) to mitigate the non-uniform light profiles created by concentrators, 2) the inclusion of highly conductive semiconductor lateral layers to minimize the effects of the non-uniform light profiles in general, and the chromatic aberration in particular; and 3) an adequate design of reliability studies to test multijunction solar cells for real operation conditions in order to determine the fragile parts in the device and improve them. These challenges are faced by means of experimental and theoretical investigation using a quasi-3D distributed circuital model.

Realistic detailed balance study of the quantum efficiency of quantum dot solar cells

An attractive but challenging technology for high efficiency solar energy conversion is the intermediate band solar cell (IBSC), whose theoretical efficiency limit is 63%, yet which has so far failed to yield high efficiencies in practice. The most advanced IBSC technology is that based on quantum dots (QDs): the QD-IBSC. In this paper, k·p calculations of photon absorption in the QDs are combined with a multi-level detailed balance model. The model has been used to reproduce the measured quantum efficiency of a real QD-IBSC and its temperature dependence. This allows the analysis of individual sub-bandgap transition currents, which has as yet not been possible experimentally, yielding a deeper understanding of the failure of current QD-IBSCs. Based on the agreement with experimental data, the model is believed to be realistic enough to evaluate future QD-IBSC proposals.