Boron-doped carbon nanoparticles: Size-independent color tunability from red to blue and bioimaging applications

Here, we report the hydrothermal synthesis of boron-doped CNPs (B-CNPs) with different size/atomic percentage of doping and size-independent color tunability from red to blue. The variation of size/atomic percentage of B is achieved by simply varying the reaction time, while the color tunability is obtained by diluting the solution. With dilution, the luminescence spectra are not only blue-shifted, the intensity increases as well. The huge blue-shift in the emission energy (similar to 1 eV) is believed to be due to the increase in the interparticle distance. The quantum yield with optimum dilution is found to increase with boron doping though it is very low as compared to CNPs and nitrogen-doped CNPs. Finally, we show that B-CNPs with a quantum yield of 0.5% can be used for bioimaging applications. (C) 2015 Elsevier Ltd. All rights reserved.

卤化铅调整Tm^3＋／Yb^3＋共掺碲酸盐玻璃上转换发光研究

研究了卤化铅调整Tm^3+／Yb^3+共掺碲酸盐玻璃的热稳定性能、Raman光谱和上转换发光光谱，分析了Tm^3+／Yb^3+共掺氧卤碲酸盐玻璃的上转换发光机理．结果发现：混合卤化铅调整Tm^3+／Yb^3+共掺碲酸盐玻璃具有好的热稳定性能、低的声子能量、强的上转换蓝光．这表明混合卤化铅调整Tm^3+／Yb^3+共掺碲酸盐玻璃是一种上转换蓝光激光器的潜在基质材料．

飞秒激光辐照ZnO晶体

利用飞秒激光对ZnO晶体进行辐照，对辐照前后的晶体样品进行发光光谱及拉曼光谱检测。辐照后发光光谱的某些发光峰强度有明显增强，但未产生新的发光峰，表明没有新的缺陷结构产生，但晶体内锌空位、间隙位锌、间隙位缺陷浓度增加。拉曼光谱结果表明，辐照后ZnO晶体未产生相变，但随着辐照激光功率的增大，拉曼峰327 cm-1，437 cm-1强度明显减弱，表明在飞秒激光辐照作用下氧化锌的结晶程度下降。但574 cm-1峰值却随着辐照功率的增大而变大，分析表明该拉曼峰很可能是由于晶体内间隙位缺陷所致。同时实验过程中观察到飞

Upconversion properties of TM3+/Yb3+ codoped fluorophosphate glasses with low phonon density of states

Fluorophosphate glasses codoped with Tm3+ and Yb3+ were prepared and their thermal stability, phonon states, and upconversion properties were studied. It is found that the increment of phosphate content is good for the thermal stability but increases the phonon density of states. However, the phonon density of states of these fluorophosphate glasses is very low due to the low phosphate content in their composition. The upconversion luminescence spectra were measured under excitation of 970 nm laser diode, and the intense blue (476 nm) and near infrared (794 nm) emission were simultaneous obtained at room temperature. The sensitizing mechanisms of Yb3+ to Tm3+ for blue and red emission contain both sequential and cooperative sensitization. The near infrared emission is a two-photon upconversion process. These researches suggest that when the phosphate content in the composition is low enough, fluorophosphate glass can be suitable host material of Tm3+ codoped with Yb3+ for blue and near infrared upconversion luminescence. (c) 2005 Elsevier B.V All rights reserved.

Yb掺杂的YAlO<3/sub>单晶体的温梯法生长和光谱性能

The dark-brown colored 5 at% Yb-doped YAlO3 (Yb:YAP) single crystal was grown successfully by temperature gradient technique (TGT) for the first time. The TGT-grown Yb:YAP crystal with the perovskite structure and excellent crystallization perfection were confirmed by the X-ray diffractions techniques. The dark-brown color of TGT-Yb:YAP crystal turned into the colorless after annealing in the air at 1200 degrees C for 10h. The absorption spectra, LD-excited infrared emission and X-ray excited luminescence spectra of the air-annealed Yb:YAP single crystal were investigated at the room temperature. The results indicate that the TGT-Yb:YAP single crystals can be used for the laser and scintillation applications. (c) 2005 Elsevier B.V. All rights reserved.

Spectroscopic properties of Nd3+:(La,Sr)(Al,Ta)O-3 crystal

A new laser crystal Nd3+:(La, Sr)(Al, Ta)O-3 (abbreviated as Nd3+:LSAT) has been grown by the conventional Czochralski method. The absorption and luminescence spectra of trivalent neodymium in Nd3+:LSAT crystal were measured at room temperature. The value of absorption and emission cross-section was calculated. The Judd-Ofelt analysis was applied to the crystal to get the phenomenological parameters (Omega(i), i = 2,4,6), the line strengths, the radiative transition rates, the branching ratios and the radiative lifetime. (C) 2006 Elsevier B.V. All rights reserved.

Gamma-irradiation effects on Ce-doped YAG crystals grown by Cz and TGT method

Gamma-rays radiation effects on Ce:YAG crystals grown by Czochralski (Cz) and temperature gradient techniques (TGT) have been studied by means of optical absorption and luminescence spectra. Valence of Ce3+ ion changes during the gamma-ray irradiation process and this result indicates Ce4+ ion may exist in both Cz-Ce:YAG and TGT-Ce:YAG crystals. Thermally stimulated luminescence measurements reveal intense thermoluminescence peaks in gamma-irradiated Ce:YAG crystals and trap parameters were calculated by general-order kinetics expression. (C) 2006 Elsevier B.V. All rights reserved.

共掺Na^＋的Yb^3＋：CaF2晶体的荧光分析与低阈值激光运转

基于975nm激发的室温下荧光光谱测量，系统地研究了在新型钠、镱共掺的氟化钙晶体中钠离子的作用机理，分析了掺钠离子浓度与激光阈值的关系，获得了具有最低激光阈值的掺杂浓度优化配比．激光实验表明对于2％Yb^3＋离子浓度的氟化钙，掺入3％的钠离子能够获得最低阈值的激光运转，这与理论和荧光分析完全一致．

Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

Polarization-resolved edge-emitting electroluminescence (EL) studies of InGaN/GaN MQWs of wavelengths from near-UV (390 nm) to blue (468 nm) light-emitting diodes (LEDs) are performed. Although the TE mode is dominant in all the samples of InGaN/GaN MQW LEDs, an obvious difference of light polarization properties is found in the InGaN/GaN MQW LEDs with different wavelengths. The polarization degree decreases from 52.4% to 26.9% when light wavelength increases. Analyses of band structures of InGaN/GaN quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue LEDs, and the high luminescence polarization degree of UV LEDs mainly comes from QW confinement and the strain effect. Therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of InGaN/GaN MQW LEDs from near violet to blue.

Equilateral-triangle-resonator injection lasers with directional emission

Equilateral-triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 pm up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mu m from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K.

Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD

For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (AI,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former system, defect regions exhibit a much lower Al content than the nominal one leading to a splitting of the respective luminescence spectra. In the latter system, a domain-like growth is observed with a pyramidal surface morphology and non-radiative recombination within the domain boundaries. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. (C) 1998 American Institute of Physics. [S0003-6951(98)02543-1].

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.