Effect of gamma-irradiation on spectral properties of undoped Y2SiO5 crystals

The absorption spectra of undoped Y2SiO5 crystals were studied before and after gamma-irradiation. After gamma-irradiation, the additional absorption peaks at 260-270 and 320nm were observed in as-grown and H,annealed Y2SiO5 crystal, but it did not occur in air-annealed Y2SiO5 crystal. These absorption peaks were attributed to F color centers and O- hole centers, respectively. Owing to more oxygen vacancies and color centers in H-2-annealed Y2SiO5 crystal than that in as-grown Y2SiO5 crystal after gamma-irradiation, the additional absorption peaks were more intense in the former than that in the latter. With the irradiation dose increasing from 20 to 220kGy, the intensity of additional absorption peaks increased.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Preliminary studies on the effect of irradiation as a means of preservation of fish and shellfish

Preliminary investigations on the effect of irradiation on commercially important fish and shell fish like silver pomfret, Bombay duck and prawns were conducted. Irradiated samples had an extended storage life compared to their respective controls even though yellowish or brownish discoloration occurred earlier in irradiated fish. Irradiation enhanced the rate of drip formation. Brine treatment prior to irradiation retarded this rate. Pre-blanching was found to further extend the storage life of irradiated fish.

UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation

We investigated the UV photoconductivity characteristics of ZnO nanowire field effect transistors (FETs) irradiated by proton beams. After proton beam irradiation (using a beam energy of 10 MeV and a fluence of 10 12 cm -2), the drain current and carrier density in the ZnO nanowire FETs decreased, and the threshold voltage shifted to the positive gate bias direction due to the creation of interface traps at the SiO 2/ZnO nanowire interface by the proton beam. The interface traps produced a higher surface barrier potential and a larger depletion region at the ZnO nanowire surface, affecting the photoconductivity and its decay time. The UV photoconductivity of the proton-irradiated ZnO nanowire FETs was higher and more prolonged than that of the pristine ZnO nanowire FETs. The results extend our understanding of the UV photoconductivity characteristics of ZnO nanowire devices and other materials when irradiated with highly energetic particles. © 2012 Elsevier B.V. All rights reserved.

Effect of beta-irradiation on photoluminescence of MOCVD grown GaN

The effect of beta particles interaction on the optical properties of MOCVD grown GaN is reported. A significant change in luminescence properties of GaN is observed after exposing the material with 0.6 MeV beta particles with low dose of 10(12) cm(-2). The results obtained from photoluminescence measurements of irradiated GaN samples in low dose are found contradictory to those reported in literature for samples irradiated with heavy dose (> 10(15) cm(-2)) of electron. An increase in intensity of yellow luminescence has been observed with increasing dose of beta particles which is in disagreement to the already reported results in literature for heavily irradiated samples. A model has been proposed to sort out this inconsistency. The increase in YL intensity at low dose is attributed to the increase in concentration of VGaON complex whereas production of non-radiative VGaON clusters is assumed to justify the decrease in YL intensity at high dose.

Electron irradiation and thermal annealing effect on GaAs solar cells

This paper describes the effect of electron irradiation and thermal annealing on LPE AlGaAs/GaAs heterojunction solar cells with various p/n junction depths. The electron irradiation experiments were performed with energy of 3 MeV, fluences ranging from 1 x 10(14) to 5 x 10(15) e/cm(2). The results obtained demonstrate that the irradiation-induced degradation of performances of the cells is mainly in the short circuit current and could be mostly recovered by annealing at 260 degrees C for 30 min. Four electron traps, E-c - 0.24 eV, E-c - 0.41 eV, E-c - 0.51 eV, E-c - 0.59 eV, were found by DLTS analysis, only two shallow levels of which could be removed by the annealing. (C) 1998 Elsevier Science B.V. All rights reserved.

High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect

High efficiency AlxGa1-xAs/GaAs heteroface solar cells have been fabricated by an improved multi-wafer squeezing graphite boat liquid phase epitaxy (LPE) technique, which enables simultaneous growth of twenty 2.3 X 2.3cm(2) epilayers in one run. A total area conversion efficiency of 17.33% is exhibited (1sun, AM0, 2.0 x 2.0cm(2)). The shallow junction cell shows more resistance to 1 MeV electron radiation than the deep one. After isochronal or isothermal annealing the density and the number of deep level traps induced by irradiation are reduced effectively for the solar cells with deep junction and bombardment under high electron fluences.

生防菌BJ1离子辐照突变高效菌株筛选及对黄瓜枯萎病的生防效果；Screening of Mutation High-Yielding Biocontrol Bacterium BJ1 by Ion Beam Irradiation and Effect of Controlling Fusarium oxysporum cucunerinum Disease

枯草芽孢杆菌BJ1是一种在真菌病害防治中发挥重要作用的生防因子,为进一步提高它的抑菌能力,获得生防效果更好的高效菌种,利用不同能量和剂量的12C6+对生防菌BJ1进行了离子辐照处理。研究结果表明:离子辐照生防菌BJ1的最适宜剂量为200~400 Gy,传能线密度(LET)为60 keV/μm;突变菌株的抑菌能力比BJ1提高了2%~21%;不仅防病效果比BJ1提高了17.48%,而且对植物具有更好的促生长作用。

Effect of gamma-irradiation on brittle-tough transition of PBT/EPDM blends

Irradiation can be applied to crosslink the dispersed elastomer phase to increase the modulus and decrease the voiding ability of the elastomer, which results in increasing critical brittle-tough transition elastomer content at constant temperature. The experimental results show that at 25 degrees C the critical elastomer content of EPDM shifts to higher composition (shift of about 4 wt%) for PBT/EPDM blends after 100 kGy gamma-irradiation. (C) 1997 Elsevier Science Ltd.

Effect of irradiation on pyrolysis of polypropylene in the presence of zeolites

For recycling of waste polymers, the degradation behavior of PP was studied with a combination of radiolysis and thermolysis methods. The results revealed that thermal degradation temperature of PP was significantly reduced when PP was irradiated in the presence of a zeolite. The irradiation-induced temperature reduction depended on the zeolite structure and composition, as well as on the morphology of the mixture. Identification of pyrolysis products indicated that, in the absence of zeolite, irradiation resulted only in a change of the product distribution but no formation of new compounds. In the presence of zeolite, however, a series of oxidized products were formed. In addition, the pyrolysis could be performed at a much lower temperature. (C) 1996 Elsevier Science Limited