Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Thermal Management of Electronics Using PCM-Based Heat Sink Subjected to Cyclic Heat Load

Designing a heat sink based on a phase change material (PCM) under cyclic loading is a critical issue. For cyclic operation, it is required that the fraction of the PCM melting during the heating cycle should completely resolidify during the cooling period, so that that thermal storage unit can be operated for an unlimited number of cycles. Accordingly, studies are carried out to find the parameters influencing the behavior of a PCM under cyclic loading. A number of parameters are identified in the process, the most important ones being the duty cycle and heat transfer coefficient (h) for cooling. The required h or the required cooling period for complete resolidification for infinite cyclic operation of a conventional PCM-based heat sink is found to be very high and unrealistic with air cooling from the surface. To overcome this problem, the conventional design is modified where h and the area exposed to heat transfer can be independently controlled. With this arrangement, the enhanced area provided for cooling keeps h within realistic limits. Analytical investigation is carried out to evaluate the thermal performance of this modified PCM-based heat sink in comparison to those with conventional designs. Experiments are also performed on both the conventional and the modified PCM-based heat sinks to validate the new findings.

Origin of 1/f noise in graphene produced for large-scale applications in electronics

The authors report a detailed investigation of the flicker noise (1/f noise) in graphene films obtained from chemical vapour deposition (CVD) and chemical reduction of graphene oxide. The authors find that in the case of polycrystalline graphene films grown by CVD, the grain boundaries and other structural defects are the dominant source of noise by acting as charged trap centres resulting in huge increase in noise as compared with that of exfoliated graphene. A study of the kinetics of defects in hydrazine-reduced graphene oxide (RGO) films as a function of the extent of reduction showed that for longer hydrazine treatment time strong localised crystal defects are introduced in RGO, whereas the RGO with shorter hydrazine treatment showed the presence of large number of mobile defects leading to higher noise amplitude.