Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser

We report a femtosecond-pulse vertical-external-cavity surface-emitting laser with a continuous repetition frequency tuning range of 8 near 1 GHz. A constant average output power of 56 ± 1 mW and near-transform-limited pulse duration of 450 ± 20 fs were observed across the entire tuning range. © 2011 American Institute of Physics.

Phase-conjugation broad area twin-contact semiconductor laser

Experimental demonstration of lasing in a broad area twin-contact semiconductor laser which operates as a phase-conjugation (PC) mirror in an external cavity configuration is reported. This allows "self-aligned" and self-pumped spatially nondegenerate four-wave mixing to be achieved without the need for external optical signals. The external cavity laser system is very insensitive to tilt misalignments of the external mirror in the PC regime and exhibits very good mechanical stability. The resonant frequency of the external cavity lies in the GHz range which corresponds to a subnanosecond time response of phase conjugation processes in the semiconductor laser. © 1997 American Institute of Physics.

Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector

We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.

Theoretical Study on the Butt-coupling of Semiconductor Laser and Fiber Bragg Grating

The butt-coupling between a semiconductor laser diode and a fiber Bragg grating external cavity acts a key roll on the laser characteristics. The scatter matrix method considering the butt-coupling efficiency is used to analyze the butt-coupling between them. It is found that the butt-coupling distance and coupling efficiency determine the laser characteristics. For strong feedback, the single lasing wavelength changes in the reflection bandwidth of the effective reflectivity ( approximately the Bragg region of the fiber Bragg grating) as the distances change. For weak feedback condition, some different results are obtained. The SMSRs in the two conditions are presented and analyzed. These results can provide important design guidance of device parameters for the practical fabrication.

A Novel Two-Section Co-Cavity Wavelength Tunable Semiconductor Laser

于2010-11-23批量导入

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.

Generation of optimized wavelength-tunable optical pulse from an uncooled gain-switched Fabry-Perot semiconductor laser using optical amplifier as external light injection

We present a novel system design that can generate the optimized wavelength-tunable optical pulse streams from an uncooled gain-switched Fabry-Perot semiconductor laser using an optical amplifier as external light source. The timing jitter of gain-switched laser has been reduced from about 3 ps to 600 fs and the pulse width has been optimized by using our system. The stability of the system was also experimentally investigated. Our results show that an uncooled gain-switched FP laser system can feasibly produce the stable optical pulse trains with pulse width of 18 ps at the repetition frequency of 5 GHz during 7 h continuous working. We respectively proved the system feasibility under 1 GHz, 2.5 GHz and 5 GHz operation. (c) 2008 Elsevier B.V. All rights reserved.

Gain switching of an external cavity grating-coupled surface emitting laser with wide tunability

The gain-switched, single frequency operation of an external cavity grating-coupled surface emitting laser with a wavelength tuning range of 100 nm was presented. The light in the grating section was coupled out of the laser at a specific angle to the surface of the device. Analysis showed that within the driving current range, lasing in the device only occurred when the external cavity was properly aligned.

3190-3275 nm tuneable, room temperature, external cavity InAs/AlSb Quantum Cascade Laser

We demonstrated a room temperature, tuneable, external cavity Quantum Cascade Laser for the use in compact spectroscopic gas sensing system. Wavelength tuning of 85 nm between 3190 nm and 3275 nm was achieved at room temperature.

Broad wavelength tunability from external cavity quantum-dot mode-locked laser

Broadband wavelength tunability over 136 nm (between 1182.5 nm and 1319 nm) of picosecond pulses in passive mode-locked regime is demonstrated in a multi-section quantum-dot laser in external cavity configuration at room temperature. The maximum peak power of 870 mW with 15 ps pulse duration was achieved at 1226 nm wavelength. © 2012 American Institute of Physics.

InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm

Room temperature, tunable, external-cavity short-wavelength InAs/AlSb quantum cascade laser (QCL) is reported. Wavelength tuning of 85 nm for the spectral range between 3190 nm and 3275 nm has been achieved by rotating the diffraction grating forming the external cavity. To suppress lasing inside the QCL cavity, its ridge was tilted by 7° at the external cavity end. The optimal tilting angle of the laser ridge was chosen by careful consideration of the return losses of the TM-polarized waveguide mode from the diffraction grating in a quasi-Littrow configuration and the Fabry-Pérot feedback from the tilted laser facet. No antireflection coating was used. © 2013 American Institute of Physics.

High-power quantum-dot vertical-external-cavity surface-emitting laser exceeding 8 W

We report on a record-high output power from an optically pumped quantum-dot vertical-external-cavity surface-emitting laser, optimized for high-power emission at 1040 nm. A maximum continuous-wave output power of 8.41 W is obtained at a heat sink temperature of 1.5 °C. By inserting a birefringent filter inside the laser cavity, a wavelength tuning over a range of 45 nm is achieved. © 2014 IEEE.

Mode locking of semiconductor laser with curved waveguide and passive mode expander

Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.