CMOS compatible RF MEMS switches with serpentine springs

This paper describes a serpentine flexure spring design and fabrication process development for radio frequency microelectromechanical (RF MEMS) capacitive switches with coplanar waveguide (CPW) lines. Sputtered tungsten is employed as the CPW line conductor instead of Au, a non-Si compatible material. The bridge membrane is fabricated from Al. The materials and fabrication process can be integrated with CMOS and SOI technology to reduce cost. Results show the MEMS switch has excellent performance with insertion loss 0.3dB, return loss -27dB at 30GHz and high isolation -30dB at 40GHz. The process developed promises to simplify the design and fabrication of RF MEMS on silicon.

Artificial surfaces of intertwined square spirals:A CPW model

Intertwining planar spirals arranged in doubly periodic arrays enables a substantially subwavelength response of the unit cell smaller than 1/40 of wavelength with large fractional bandwidths. These properties are important for application at low frequencies, conformal curved surfaces, or with compact radiators. It is shown that interleaving counter-wound spiral arms extended into adjacent unit cells dramatically increase the array equivalent capacitance while reducing the inductance. A coplanar waveguide (CPW) model has been developed to analytically estimate the equivalent capacitance and inductance of intertwined spiral array elements in terms of their geometrical parameters. The proposed CPW model is shown to provide an accurate prediction of the fundamental resonance frequency and can be instrumental in the design of the arrays for a specified frequency response. © 2012 IEEE.

Quantum Information Processing with spin systems: from modeling to possible implementations

The physical implementation of quantum information processing is one of the major challenges of current research. In the last few years, several theoretical proposals and experimental demonstrations on a small number of qubits have been carried out, but a quantum computing architecture that is straightforwardly scalable, universal, and realizable with state-of-the-art technology is still lacking. In particular, a major ultimate objective is the construction of quantum simulators, yielding massively increased computational power in simulating quantum systems. Here we investigate promising routes towards the actual realization of a quantum computer, based on spin systems. The first one employs molecular nanomagnets with a doublet ground state to encode each qubit and exploits the wide chemical tunability of these systems to obtain the proper topology of inter-qubit interactions. Indeed, recent advances in coordination chemistry allow us to arrange these qubits in chains, with tailored interactions mediated by magnetic linkers. These act as switches of the effective qubit-qubit coupling, thus enabling the implementation of one- and two-qubit gates. Molecular qubits can be controlled either by uniform magnetic pulses, either by local electric fields. We introduce here two different schemes for quantum information processing with either global or local control of the inter-qubit interaction and demonstrate the high performance of these platforms by simulating the system time evolution with state-of-the-art parameters. The second architecture we propose is based on a hybrid spin-photon qubit encoding, which exploits the best characteristic of photons, whose mobility is exploited to efficiently establish long-range entanglement, and spin systems, which ensure long coherence times. The setup consists of spin ensembles coherently coupled to single photons within superconducting coplanar waveguide resonators. The tunability of the resonators frequency is exploited as the only manipulation tool to implement a universal set of quantum gates, by bringing the photons into/out of resonance with the spin transition. The time evolution of the system subject to the pulse sequence used to implement complex quantum algorithms has been simulated by numerically integrating the master equation for the system density matrix, thus including the harmful effects of decoherence. Finally a scheme to overcome the leakage of information due to inhomogeneous broadening of the spin ensemble is pointed out. Both the proposed setups are based on state-of-the-art technological achievements. By extensive numerical experiments we show that their performance is remarkably good, even for the implementation of long sequences of gates used to simulate interesting physical models. Therefore, the here examined systems are really promising buildingblocks of future scalable architectures and can be used for proof-of-principle experiments of quantum information processing and quantum simulation.

Elastic modulus study of gold thin film for use as an actuated membrane in a superconductive radio frequency (RF) microelectromechanical (MEM) switch

The objective of this research was to find Young's elastic modulus for thin gold films at room and cryogenic temperatures based on the flexional model which has not been previously attempted. Electrical Sonnet simulations and numerical methods using Abacus for the mechanical responses were employed for this purpose. A RF MEM shunt switch was designed and a fabrication process developed in house. The switch is composed of a superconducting YBa2 Cu3O7 coplanar waveguide structure with an Au bridge membrane suspended above an area of the center conductor covered with BaTiO3 dielectric. The Au membrane is actuated by the electrostatic attractive force acting between the transmission line and the membrane when voltage is applied. The value of the actuation force will greatly depend on the switch pull-down voltage and on the geometry and mechanical properties of the bridge material. Results show that the elastic modulus for Au thin film can be 484 times higher at cryogenic temperature than it is at room temperature. ^

Temperature dependence and characterization of gold thin film actuated membranes for radio frequency microelectromechanical switches

Over the last 10 years, the development and the understanding of the mechanical properties of thin film material have been essential for improving the reliability and lifetime in operation of microelectromechanical systems (MEMS). Although the properties of a bulk material might be well characterized, thin-film properties are considerably different from those of the bulk and it cannot be assumed that mechanical properties measured using bulk specimens will apply to the same materials when used as a thin film in MEMS. For many microelectronic thin films, the material properties depend strongly on the details of the deposition process and the growth conditions on its substrate. ^ The purpose of this dissertation is to determine the temperature dependence of a gold thin film membrane on the pull down voltage of a MEMS switch as the temperature is varied from room temperature (300 K) to cryogenic temperature (10 K). For this purpose, an RF MEMS shunt switch was designed and fabricated. The switch is composed of a gold coplanar waveguide structure with a gold bridge membrane suspended above an area of the center conductor which is covered by a dielectric (BaTiO3). The gold membrane is actuated by an electrostatic force acting between the transmission line and the membrane when voltage is applied. ^ Material characterization of the gold evaporated thin film membrane was obtained via AFM, SEM, TEM and X-ray diffraction analyses. A mathematical relation was used to estimate the pull down voltage of the switch at cryogenic temperature and results showed that the mathematical theory match the experimental values of the tested MEMS switches. ^

Elastic modulus study of gold thin film for use as an actuated membrane in a superconductive radio frequency (RF) MicroElectroMechanical (MEM) switch

The objective of this research was to find Young's elastic modulus for thin gold films at room and cryogenic temperatures based on the flexional model which has not been previously attempted. Electrical Sonnet simulations and numerical methods using Abacus for the mechanical responses were employed for this purpose. A RF MEM shunt switch was designed and a fabrication process developed in house. The switch is composed of a superconducting YBa2Cu3O7 coplanar waveguide structure with an Au bridge membrane suspended above an area of the center conductor covered with BaTiO3 dielectric. The Au membrane is actuated by the electrostatic attractive force acting between the transmission line and the membrane when voltage is applied. The value of the actuation force will greatly depend on the switch pull-down voltage and on the geometry and mechanical properties of the bridge material. Results show that the elastic modulus for Au thin film can be 484 times higher at cryogenic temperature than it is at room temperature.

Through Wafer 3D Vertical Micro-Coaxial Probe for High Frequency Material Characterization and Millimeter Wave Packaging Systems

This work presents the development of an in-plane vertical micro-coaxial probe using bulk micromachining technique for high frequency material characterization. The coaxial probe was fabricated in a silicon substrate by standard photolithography and a deep reactive ion etching (DRIE) technique. The through-hole structure in the form of a coaxial probe was etched and metalized with a diluted silver paste. A co-planar waveguide configuration was integrated with the design to characterize the probe. The electrical and RF characteristics of the coaxial probe were determined by simulating the probe design in Ansoft’s High Frequency Structure Simulator (HFSS). The reflection coefficient and transducer gain performance of the probe was measured up to 65 GHz using a vector network analyzer (VNA). The probe demonstrated excellent results over a wide frequency band, indicating its ability to integrate with millimeter wave packaging systems as well as characterize unknown materials at high frequencies. The probe was then placed in contact with 3 materials where their unknown permittivities were determined. To accomplish this, the coaxial probe was placed in contact with the material under test and electromagnetic waves were directed to the surface using the VNA, where its reflection coefficient was then determined over a wide frequency band from dc-to -65GHz. Next, the permittivity of each material was deduced from its measured reflection coefficients using a cross ratio invariance coding technique. The permittivity results obtained when measuring the reflection coefficient data were compared to simulated permittivity results and agreed well. These results validate the use of the micro-coaxial probe to characterize the permittivity of unknown materials at high frequencies up to 65GHz.

ACS fed printed F-shaped uniplanar antenna for dual band WLAN applications

An asymmetric coplanar strip (ACS) fed dual band F-shaped antenna covering the 2.4/5.2 GHz WLAN bands is presented. The optimized dimensions of the proposed uniplanar antenna are 21 mm × 19 mm when printed on a substrate of dielectric constant 4.4 and height 1.6 mm. The dual band nature of the antenna is brought about by the various current paths in the F-shaped structure and the ground plane. The antenna exhibits nearly omnidirectional radiation characteristics and moderate gain in both the operating bands. Details of the antenna design, simulation, and experimental results are presented and discussed.

Demonstration of Improved Passive UHF RFID Coverage using Optically-Fed Distributed Multi-Antenna System

Optically-fed distributed antenna system (DAS) technology is combined with passive ultra high frequency (UHF) radio frequency identification (RFID). It is shown that RFID signals can be carried on directly modulated radio over fiber links without impacting their performance. It is also shown that a multi-antenna DAS can greatly reduce the number of nulls experienced by RFID in a complex radio environment, increasing the likelihood of successful tag detection. Consequently, optimization of the DAS reduces nulls further. We demonstrate RFID tag reading using a three antenna DAS system over a 20mx6m area, limited by building constraints, where 100% of the test points can be successfully read. The detected signal strength from the tag is also observed to increase by an average of approximately 10dB compared with a conventional switched multi-antenna RFID system. This improvement is achieved at +31dBm equivalent isotropically radiated power (EIRP) from all three antenna units (AUs).

Dual-mode compact structure comprising of side-fed bifilar and quadrifilar helix antenna

A side-fed bifilar helix antenna can be integrated with a quadrifilar helix antenna in a piggy back configuration in order to achieve a dual-mode radiating structure. The overall length of the structure is 0.44 lambda at the resonant frequency (1.54 GHz) of the space mode antenna and 0.39 lambda at the resonant frequency (1.34 GHz) of the terrestrial mode antenna. The computed results are validated by experimental data.

Side-fed bifilar helix antenna

A side-fed bifilar is shown to generate a similar radiation pattern as a dipole antenna, but the structure has a significantly reduced axial length. Simulated and measured results show that the helix turn angle can be used to control the ratio of the orthogonal linear field components and the input impedance.