955 resultados para Zn2GeO4:Mn Phosphor


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Nanoparticles of trivalent Eu3+-doped Nd2O3 phosphors have been prepared using a low-temperature solution combustion method with metal nitrate as precursor and oxalyldihydrazide as a fuel at a fairly low temperature (<500 degrees C) and in a very short time (<5 min). A powder X-ray diffraction pattern reveals that cubic Nd2O3 : Eu3+ crystallites are directly obtained without the requirement of further calcinations. The crystallite size, evaluated from Scherer's formula, was found to be in the range of 20-30 nm. The microstructure and morphology were studied by scanning electron microscopy, which showed the phosphor to be foamy and fluffy in nature. Thermoluminescence characteristics of the Nd2O3 : Eu3+ have been studied using gamma irradiation. These demonstrate that the phosphor is suitable for use as a dosimeter.

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Blue [{Cu(2,2'-bipy)(2)}(2){alpha-SiW12O40}] (bipy = bipyridyl) (1) and pale yellow [Mn(2,2'-bipy)(3)](2)[alpha-SiW12O40] (2) have been synthesized hydrothermally and characterized by IR spectroscopy and single crystal X-ray structure analysis. In 1, the [alpha-SiW12O40](4-) ion acts as a bridge between the two [{Cu(2,2'-bipy)(2)](2+) moieties via coordination through the terminal oxygen atoms, while in 2, the [Mn(2,2'-bipy)(3)](2+) ion balances the charge on the polyoxo anion without forming any covalent bond. To the best of our knowledge, this is the first example of transition metal-mediated transformation of [alpha-SiW9O34](10-) to [alpha-SiW12O40](4-).

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The wear resistance of high chromium iron is well recorded. However, the same is not the case as regards the use of manganese at higher percentages in high chromium irons and its influence on wear behaviour. Hence, this work highlights the slurry wear characteristics of chromium 16–19%) iron following the introduction of manganese at two levels i.e. 5 and 10%. It is known that the wear properties are dictated by the microstructural features. To alter the structure, the cooling rate of casting has been varied by adopting two different types of moulds (i.e. sand and metal) and subsequently subjecting to thermal treatment. The as-cast and heat treated samples are examined for microstructure and then evaluated for hardness and slurry erosion properties. As the manganese content is increased from 5 to 10%, the hardness showed a decrease in value both in the as-cast and heat treated conditions. The slurry erosion loss, expectedly, showed an increase irrespective of the sample condition (i.e. mould type/heat treatment adopted). The findings are corroborated with the microstructural features obtained through optical and scanning electron microscopy.

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A novel manganese phosphite-oxalate, [C2N2H10][Mn-2(II)(OH2)(2)(HPO3)(2)(C2O4)] has been hydothermally synthesized and its structure determined by single-crystal X-ray diffraction. The structure consists of neutral manganese phosphite layers, [Mn(HPO3)](infinity), formed by MnO6 octahedra and HPO3 units, cross-linked by the oxalate moieties. The organic cations occupy the middle of the 8-membered one dimensional channels. Magnetic studies indicate weak antiferromagnetic interactions between the Mn2+ ions. (C) 2009 Elsevier Inc. All rights reserved.

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Phase-singular solid solutions of La0.6Sr0.4Mn1-yMeyO3 (0 <= y <= 0.3) [Me=Li1+, Mg2+, Al3+, Ti4+, Nb5+, Mo6+ or W6+] [LSMey] perovskite of rhombohedral symmetry (space group: R (3) over barc) have been prepared wherein the valence of the diamagnetic substituent at Mn site ranged from 1 to 6. With increasing y-content in LSMey, the metal-insulator (TM-I) transition in resistivity-temperature rho(T) curves shifted to low temperatures. The magnetization studies M(H) as well as the M(T) indicated two groups for LSMey. (1) Group A with Me=Mg, Al, Ti, or Nb which are paramagnetic insulators (PIs) at room temperature with low values of M (< 0.5 mu(B)/Mn); the magnetic transition [ferromagnetic insulator (FMI)-PI] temperature (T-C) shifts to low temperatures and nearly coincides with that of TM-I and the maximum magnetoresistance (MR) of similar to 50% prevails near T-C (approximate to TM-I). (2) Group-B samples with Me=Li, Mo, or W which are FMIs with M-s=3.3-3.58 mu(B)/Mn and marginal reduction in T-C similar to 350 K as compared to the undoped LSMO (T-C similar to 378 K). The latter samples show large temperature differences Delta T=T-c-TM-I, reaching up to similar to 288 K. The maximum MR (similar to 60%) prevails at low temperatures corresponding to the M-I transition TM-I rather than around T-C. High resolution lattice images as well as microscopy analysis revealed the prevalence of inhomogeneous phase mixtures of randomly distributed charge ordered-insulating (COI) bistripes (similar to 3-5 nm width) within FMI charge-disordered regions, yet maintaining crystallographically single phase with no secondary precipitate formation. The averaged ionic radius < r(B)>, valency, or charge/radius ratio < CRR > cannot be correlated with that of large Delta T; hence cannot be used to parametrize the discrepancy between T-C and TM-I. The M-I transition is controlled by the charge conduction within the electronically heterogeneous mixtures (COI bistripes+FMI charge disordered); large MR at TM-I suggests that the spin-ordered FM-insulating regions assist the charge transport, whereas the T-C is associated with the bulk spin ordered regions corresponding to the FMI phase of higher volume fraction of which anchors the T-C to higher temperatures. The present analysis showed that the double-exchange model alone cannot account for the wide bifurcation of the magnetic and electric transitions, contributions from the charge as well as lattice degrees of freedom to be separated from spin/orbital ordering. The heterogeneous phase mixtures (COI+FMI) cannot be treated as of granular composite behavior. (c) 2008 American Institute of Physics.

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The main method of modifying properties of semiconductors is to introduce small amount of impurities inside the material. This is used to control magnetic and optical properties of materials and to realize p- and n-type semiconductors out of intrinsic material in order to manufacture fundamental components such as diodes. As diffusion can be described as random mixing of material due to thermal movement of atoms, it is essential to know the diffusion behavior of the impurities in order to manufacture working components. In modified radiotracer technique diffusion is studied using radioactive isotopes of elements as tracers. The technique is called modified as atoms are deployed inside the material by ion beam implantation. With ion implantation, a distinct distribution of impurities can be deployed inside the sample surface with good con- trol over the amount of implanted atoms. As electromagnetic radiation and other nuclear decay products emitted by radioactive materials can be easily detected, only very low amount of impurities can be used. This makes it possible to study diffusion in pure materials without essentially modifying the initial properties by doping. In this thesis a modified radiotracer technique is used to study the diffusion of beryllium in GaN, ZnO, SiGe and glassy carbon. GaN, ZnO and SiGe are of great interest to the semiconductor industry and beryllium as a small and possibly rapid dopant hasn t been studied previously using the technique. Glassy carbon has been added to demonstrate the feasibility of the technique. In addition, the diffusion of magnetic impurities, Mn and Co, has been studied in GaAs and ZnO (respectively) with spintronic applications in mind.

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Hole-doped perovskites such as La1-xCaxMnO3 present special magnetic and magnetotransport properties, and it is commonly accepted that the local atomic structure around Mn ions plays a crucial role in determining these peculiar features. Therefore experimental techniques directly probing the local atomic structure, like x-ray absorption spectroscopy (XAS), have been widely exploited to deeply understand the physics of these compounds. Quantitative XAS analysis usually concerns the extended region [extended x-ray absorption fine structure (EXAFS)] of the absorption spectra. The near-edge region [x-ray absorption near-edge spectroscopy (XANES)] of XAS spectra can provide detailed complementary information on the electronic structure and local atomic topology around the absorber. However, the complexity of the XANES analysis usually prevents a quantitative understanding of the data. This work exploits the recently developed MXAN code to achieve a quantitative structural refinement of the Mn K-edge XANES of LaMnO3 and CaMnO3 compounds; they are the end compounds of the doped manganite series LaxCa1-xMnO3. The results derived from the EXAFS and XANES analyses are in good agreement, demonstrating that a quantitative picture of the local structure can be obtained from XANES in these crystalline compounds. Moreover, the quantitative XANES analysis provides topological information not directly achievable from EXAFS data analysis. This work demonstrates that combining the analysis of extended and near-edge regions of Mn K-edge XAS spectra could provide a complete and accurate description of Mn local atomic environment in these compounds.

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Dimethyl sulphoxide (DMSO) and dimethyl formamide (DMF) complexes of Mn(III) perchlorate have been prepared and their conductivity, magnetic susceptibility and i.r. and electronic spectra studied. The complexes behave as uni-trivalent electrolytes in acetonitrile. Their magnetic moments of 5·1 B.M. show them to be of high spin type. Infra-red spectra show that oxygen is the donor atom in both complexes. The spin allowed electronic transition for d4 system, around 20,000 cm−1, ascribable to the 5Eg → 5T2g transition, suggests an octahedral configuration for these complexes

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Following growth doping technique highly luminescent (quantum yield >50%) Mn-doped ZnS nanocrystals are synthesized via colloidal synthetictechnique. The dopant emission has been optimized with varying reaction parameters and found the ratio of Zn and S as well as the percentage of introduced dopant in the reaction mixture are key factors for controlling the intensity. The method is simple, hassle free, and can be scalable to gram level without hindering the quality of nanocrystals. These nanocrystals retain their emission during various ligand exchange processes and aqueous dispersion.

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We report here a synthetic route for high-quality Mn-doped ZnSe nanocrystals using selenourea as a selenium source, avoiding the more conventional route-using tributylphosphine (TBP) that restricts the growth of spherical ZnSe nanocrystals below 5 nm in size, besides being highly toxic and pyrophoric. Spherical ZnSe nanocrystals with unprecendented sizes (up to 12 nm) are synthesized, the large size of the host helps to keep dopant ions well inside the nanocrystal leading to intense and stable dopant emission. Mn-doped ZnSe nanocrystals with more than 50% quantum yield (QY) are synthesized in this method and found to be stable both in aqueous and nonaqueous dispersions for months.

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The variety of electron diffraction patterns arising from the decagonal phase has been explored using a stereographic analysis for generating the important zone axes as intersection points corresponding to important relvectors. An indexing scheme employing a set of five vectors and an orthogonal vector has been followed. A systematic tilting from the decagonal axis to one of the twofold axes has been adopted to generate a set of experimental diffraction patterns corresponding to the expected patterns from the stereographic analysis with excellent agreement.