Reduction in magnetic field induced broadening of the resistive transition in laser‐deposited YBa2Cu3O7−x thin films on MgO

The magnetic field induced broadening of the normal to superconducting resistive transition of YBa2Cu3O7−x thin films laser deposited on (100) MgO substrates for field oriented parallel to the c axis is found to be significantly reduced in comparison with that found previously in single crystals and in films deposited on SrTiO3. This reduction in broadening is associated with a high density of defects which, while causing a slight decrease in Tc and an increase in the zero‐field transition width, seems to provide strong vortex pinning centers that reduce flux creep

Surface modifications in single crystal surfaces of YBa2Cu3O7-delta upon high energy ion irradiation

Atomic force microscopy investigations on swift heavy ion (200 MeV An) irradiated surfaces of a high T-c single crystal YBa2Cu3O7-delta are presented. Results obtained revealed an ion-induced erosion/sputtering clearly confirming our earlier observation on grain boundary dominated thin films. Apart from sputtering, notable effects were seen with many defect structures like dikes/hillocks surrounded by craters, dikes, holes, pearl like structures and ripple formation of sub-micron undulations, all in one crystal. Results are discussed in the light of co-operative phenomena of material re-distribution mechanism related to mass transfer and crater formations.

Nature of the copper species in superconducting YBa2Cu3O7

The nominal composition of YBa2Cu3O7 oxide suggests that 33% of the copper should be in the 3+ state. In structural studies3–5, Cu3+ and Cu2+ ions have been assigned specific sites based on their preferred coordinations, and many of the models of superconductivity also require the presence of Cu3+. Our studies however show that Cu is present only in the Cu1+ and Cu2+ states, the proportion of the former increasing with decreasing temperature. It appears that there is no clear experimental evidence for the presence of Cu3+ in YBa2Cu3O7.

Oxygen stoichiometry and structure of YBa2Cu3O7−δ and their relation to superconductivity

Thermogravimetric curves of the superconducting samples (0.0 ≤ δ left angle bracket0.5) of YBa2Cu3O7−δ are shown to be characteristically different from those of the non-superconducting samples (δreverse similar, equals0.5–1.0). The variation of Tc (from resistivity measurements) with δ confirms for a change from Image to Image Bands found in bright or dark field electron micrographs are shown to arise for different orientations of the [CuO2]∞ planes, causing oxygen enrichment in the boundaries. A new defect with missing Y-rows is found in the images of Y1−xBa2Cu3O7.

An excitonic mechanism for high-temperature. Superconductivity in YBa2Cu3O7

We propose an excitonic mechanism for high temperature superconductivity in YBa2Cu3O7. We feel that in this material, nature has provided a very elegant system, closely simulated by the model proposed by Allender, Bray and Bardeen1 using Ginzburg's ideas.2 In this system the excitonic layer and the conduction electron layers are indeed atomic planes making contacts on atomic level, an ideal version of the situation envisaged by Allender et al. Further, since these layers are physically separated, the question of screening of charges is avoided.

Effect of hole localization on Madelung potential of YBa2Cu3O7

The Madelung potential and formation energy of the superconducting compound YBa2Cu3O7 have been computed for hole localization at different sites in the crystal. The cases considered include Cu3+ ion at Cu(1) and Cu(2) sites, O− ion at O(1), O(2), O(3) and O(4) sites and combinations of O− and Cu3+ ions at O(4) and Cu(1) and O(2,3) and Cu(2) sites. The two lowest-energy configurations correspond to Cu3+ ion at Cu(1) site and O− ion at O(4) site. The difference in formation energy between those configurations is relatively small. The next preferred configuration corresponds to simultaneous partial localization of the hole at Cu (1) site and O(1) site. Other configurations are much less stable. The results suggest a resonating or fluctuating valence model for YBa2Cu3O7.

Design and fabrication of an automated thermal desorption gas-solid reaction system: Oxidation of ammonia and methanol over YBa2Cu3O7−δ(123) oxide systems

A fully automated, versatile Temperature Programmed Desorption (TDP), Temperature Programmed Reaction (TPR) and Evolved Gas Analysis (EGA) system has been designed and fabricated. The system consists of a micro-reactor which can be evacuated to 10−6 torr and can be heated from 30 to 750°C at a rate of 5 to 30°C per minute. The gas evolved from the reactor is analysed by a quadrupole mass spectrometer (1–300 amu). Data on each of the mass scans and the temperature at a given time are acquired by a PC/AT system to generate thermograms. The functioning of the system is exemplified by the temperature programmed desorption (TPD) of oxygen from YBa2Cu3−xCoxO7 ± δ, catalytic ammonia oxidation to NO over YBa2Cu3O7−δ and anaerobic oxidation of methanol to CO2, CO and H2O over YBa2Cu3O7−δ (Y123) and PrBa2Cu3O7−δ (Pr123) systems.

Evidence for decoupled two-dimensional vortex behavior of YBa2Cu3O7-delta in La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3 trilayer

We investigate the vortex behavior of YBa2Cu3O7-delta thin films sandwiched between two ferromagnetic layers (La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3). The magnetization study on La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3 trilayers conspicuously shows the presence of both ferromagnetic and diamagnetic phases. The magnetotransport study on the trilayers reveals a significant reduction in the activation energy (U) for the vortex motion in YBa2Cu3O7-delta. Besides, the ``U'' exhibits a logarithmic dependence on the applied magnetic field which directly indicates the existence of decoupled two-dimensional (2D) pancake vortices present in the CuO2 layers. The evidence of 2D decoupled vortex behavior in La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3 is believed to arise from (a) the weakening of superconducting coherence length along the c-axis and (b) enhanced intraplane vortex-vortex interaction due to the presence of ferromagnetic layers. (C) 2010 American Institute of Physics. doi: 10.1063/1.3524545]

Critical exponent of the electrical conductivity in the paracoherence region of a thin film of YBa2Cu3O7?x

Critical exponent of the electrical conductivity in the paracoherence region (gamma) of the high temperature superconductor YBa2Cu3O7-x (YBCO) has been estimated for high quality thin film on ZrO2 substrate prepared by high pressure oxygen sputtering. High energy ion irradiation was carried out using 100 MeV O-16(7+) ions at liquid nitrogen to see the effects of disorder on the value of the exponent. The critical exponent from a value of about 2 to 1.62 upon irradiation. Studies were also carried film to see the effect of ageing and annealing.

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

Reactivity and catalytic activity of layered YBA2CU3O7-delta (123) type defect perovskites

The chemical modifications of structure, reactivity and catalytic properties of layered triple perovskite oxides, related to the YBa2Cu3O7-delta (123) system, have been briefly reviewed. These oxides form a versatile family of materials with wide-ranging chemical and physical properties. The multiple sites available for chemical doping, and the ability to reversibly intercalate oxygen at the defect sites have rendered these oxides important model systems in the area of oxide catalysis. An attempt has been made to comprehend the hitherto known catalytic reactions and correlate them to various factors like structure, oxygen diffusional limitations, different geometries adopted by various substituents, oxidative non-stoichiometry and activation energy for oxygen desorption. In particular, results on the enhanced catalytic activity of cobalt-substituted 123 oxide systems towards the selective catalytic oxidation of ammonia to nitric oxide and carbon monoxide to carbon dioxide are presented.

Surface barrier effects in non-resonant microwave absorption by superconducting thin films of YBa2Cu3O7??

We present an unusual temperature dependence of hysteresis in the Lion resonant microwave absorption (NRMA) signals from superconducting thin films of YBa2Cu3O7-delta. We observe that the hysteresis increases with increase in temperature till T-c which we interpret as evidence for the presence of Bean-Livingston surface barriers (BLSB) in the single crystalline films.

Calculation of elastic pinning strength of semicoherent Y2BaCuO5 precipitates in YBa2Cu3O7

The pinning energy due to the elastic interaction of a semicoherent Y2BaCuO5 precipitate with the YBa2Cu3O7 matrix is computed. This is achieved by setting up dislocation arrays at the interface. The elastic stresses generated by such arrays are integrated over a fluxoid volume to obtain the energy. It is seen that this elastic interaction energy makes an additive contribution to the total J(c) value.

Surface resistance and residual losses of Ag?doped YBa2Cu3O7?? thin films on sapphire

High?quality Ag?doped YBa2Cu3O7?? thin films have been grown by laser ablation on R?plane ?1102? sapphire without any buffer layer. Thin films have been found to be highly c?axis oriented with Tc=90 K, transition width ?T?1 K, and transport Jc=1.2×106 A?cm?2 at 77 K in self?field conditions. The microwave surface resistance of these films measured on patterned microstrip resonators has been found to be 530 ?? at 10 GHz at 77 K which is the lowest reported on unbuffered sapphire. Improved in?plane epitaxy and reduced reaction rate between the substrate and the film caused due to Ag in the film are believed to be responsible for this greatly improved microwave surface resistance. © 1995 American Institute of Physics.