843 resultados para Wideband Receivers


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In contemporary orthogonal frequency division multiplexing (OFDM) systems, such as Long Term Evolution (LTE), LTE-Advanced, and WiMAX, a codeword is transmitted over a group of subcarriers. Since different subcarriers see different channel gains in frequency-selective channels, the modulation and coding scheme (MCS) of the codeword must be selected based on the vector of signal-to-noise-ratios (SNRs) of these subcarriers. Exponential effective SNR mapping (EESM) maps the vector of SNRs into an equivalent flat-fading SNR, and is widely used to simplify this problem. We develop a new analytical framework to characterize the throughput of EESM-based rate adaptation in such wideband channels in the presence of feedback delays. We derive a novel accurate approximation for the throughput as a function of feedback delay. We also propose a novel bivariate gamma distribution to model the time evolution of EESM between the times of estimation and data transmission, which facilitates the analysis. These are then generalized to a multi-cell, multi-user scenario with various frequency-domain schedulers. Unlike prior work, most of which is simulation-based, our framework encompasses both correlated and independent subcarriers and various multiple antenna diversity modes; it is accurate over a wide range of delays.

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An area-efficient, wideband RF frequency synthesizer, which simultaneously generates multiple local oscillator (LO) signals, is designed. It is suitable for parallel wideband RF spectrum sensing in cognitive radios. The frequency synthesizer consists of an injection locked oscillator cascade (ILOC) where all the LO signals are derived from a single reference oscillator. The ILOC is implemented in a 130-nm technology with an active area of . It generates 4 uniformly spaced LO carrier frequencies from 500 MHz to 2 GHz. This design is the first known implementation of a CMOS based ILOC for wide-band RF spectrum sensing applications.

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The down conversion of radio frequency components around the harmonics of the local oscillator (LO), and its impact on the accuracy of white space detection using integrated spectrum sensors, is studied. We propose an algorithm to mitigate the impact of harmonic downconversion by utilizing multiple parallel downconverters in the system architecture. The proposed algorithm is validated on a test-board using commercially available integrated circuits and a test-chip implemented in a 130-nm CMOS technology. The measured data show that the impact of the harmonic downconversion is closely related to the LO characteristics, and that much of it can be mitigated by the proposed technique.

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Ultrashort-pulse lasers with spectral tuning capability have widespread applications in fields such as spectroscopy, biomedical research and telecommunications. Mode-locked fibre lasers are convenient and powerful sources of ultrashort pulses, and the inclusion of a broadband saturable absorber as a passive optical switch inside the laser cavity may offer tuneability over a range of wavelengths. Semiconductor saturable absorber mirrors are widely used in fibre lasers, but their operating range is typically limited to a few tens of nanometres, and their fabrication can be challenging in the 1.3-1.5 microm wavelength region used for optical communications. Single-walled carbon nanotubes are excellent saturable absorbers because of their subpicosecond recovery time, low saturation intensity, polarization insensitivity, and mechanical and environmental robustness. Here, we engineer a nanotube-polycarbonate film with a wide bandwidth (>300 nm) around 1.55 microm, and then use it to demonstrate a 2.4 ps Er(3+)-doped fibre laser that is tuneable from 1,518 to 1,558 nm. In principle, different diameters and chiralities of nanotubes could be combined to enable compact, mode-locked fibre lasers that are tuneable over a much broader range of wavelengths than other systems.

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We have designed and fabricated a broadband and compact polarisation selector using a photonic crystal at the junction of two intersecting active waveguides. The crystal shows >8dB polarisation selectivity over a 70nm range. © 2003 Optical Society of America.

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Among the branches of astronomy, radio astronomy is unique in that it spans the largest portion of the electromagnetic spectrum, e.g., from about 10 MHz to 300 GHz. On the other hand, due to scientific priorities as well as technological limitations, radio astronomy receivers have traditionally covered only about an octave bandwidth. This approach of "one specialized receiver for one primary science goal" is, however, not only becoming too expensive for next-generation radio telescopes comprising thousands of small antennas, but also is inadequate to answer some of the scientific questions of today which require simultaneous coverage of very large bandwidths.

This thesis presents significant improvements on the state of the art of two key receiver components in pursuit of decade-bandwidth radio astronomy: 1) reflector feed antennas; 2) low-noise amplifiers on compound-semiconductor technologies. The first part of this thesis introduces the quadruple-ridged flared horn, a flexible, dual linear-polarization reflector feed antenna that achieves 5:1-7:1 frequency bandwidths while maintaining near-constant beamwidth. The horn is unique in that it is the only wideband feed antenna suitable for radio astronomy that: 1) can be designed to have nominal 10 dB beamwidth between 30 and 150 degrees; 2) requires one single-ended 50 Ohm low-noise amplifier per polarization. Design, analysis, and measurements of several quad-ridged horns are presented to demonstrate its feasibility and flexibility.

The second part of the thesis focuses on modeling and measurements of discrete high-electron mobility transistors (HEMTs) and their applications in wideband, extremely low-noise amplifiers. The transistors and microwave monolithic integrated circuit low-noise amplifiers described herein have been fabricated on two state-of-the-art HEMT processes: 1) 35 nm indium phosphide; 2) 70 nm gallium arsenide. DC and microwave performance of transistors from both processes at room and cryogenic temperatures are included, as well as first-reported measurements of detailed noise characterization of the sub-micron HEMTs at both temperatures. Design and measurements of two low-noise amplifiers covering 1--20 and 8—50 GHz fabricated on both processes are also provided, which show that the 1--20 GHz amplifier improves the state of the art in cryogenic noise and bandwidth, while the 8--50 GHz amplifier achieves noise performance only slightly worse than the best published results but does so with nearly a decade bandwidth.