Optical and semi-conductor properties of Lead Telluride coatings

The optical and semiconductor properties of lead telluride coatings are dependant on various factors contributing to its performance. In this paper, we will present the temperature dependant effects of single layer lead telluride coatings on the dispersion and absorption characteristics, absorption edge, and carrier concentration from 15 K to 436 K using both experimental and theoretical analysis.

Band gap control via tuning of inversion degree in CdIn2S4 spinel

Based on theoretical arguments we propose a possible route for controlling the band-gap in the promising photovoltaic material CdIn2S4. Our ab initio calculations show that the experimental degree of inversion in this spinel (fraction of tetrahedral sites occupied by In) corresponds approximately to the equilibrium value given by the minimum of the theoretical inversion free energy at a typical synthesis temperature. Modification of this temperature, or of the cooling rate after synthesis, is then expected to change the inversion degree, which in turn sensitively tunes the electronic band-gap of the solid, as shown here by Heyd-Scuseria-Ernzerhof screened hybrid functional calculations.

Spin polarization, orbital occupation and band gap opening in vanadium dioxide: the effect of screened Hartree–Fock exchange

The metal–insulator transition of VO2 so far has evaded an accurate description by density functional theory. The screened hybrid functional of Heyd, Scuseria and Ernzerhof leads to reasonable solutions for both the low-temperature monoclinic and high-temperature rutile phases only if spin polarization is excluded from the calculations. We explore whether a satisfactory agreement with experiment can be achieved by tuning the fraction of Hartree Fock exchange (a) in the density functional. It is found that two branches of locally stable solutions exist for the rutile phase for 12:5% 6 a 6 20%. One is metallic and has the correct stability as compared to the monoclinic phase, the other is insulating with lower energy than the metallic branch. We discuss these observations based on the V 3d orbital occupations and conclude that a ¼ 10% is the best possible choice for spin-polarized VO2 calculations.

Occurrence of wide-band tracheids in Cactaceae: wood variation during Pilosocereus auriasetus development

Studies of wide-band tracheids (WBTs) have aroused the interest of researchers who have searched to understand their origin, function, and phylogenetic implications. The present research has the objective of studying the distribution of WBTs, together with anatomic aspects of vegetative organs in different stages of Pilosocereus aurisetus, in order to understand the occurrence of WBTs in columnar cacti. Transverse and longitudinal sections of the stem (apex, middle, and base) and the root were made. The epidermis was present in the photosynthetic stem, but was substituted by periderm which was already well established in the root. The differentiation of the cortex is visible in the middle of the stem, becoming homogeneous in the base. WBTs were observed in the base and middle of young stems (WBT monomorphic wood); common in stems of globular cacti. However, WBTs/ fibrous dimorphic wood was observed in the base of adult stems, a result of the cambial activity producing vessel elements and fibers. This wood polymorphism of the Cactaceae can be interpreted as cambial variation, a common character of Caryophyllales. Due to the small size of the plant, the presence of WBTs in the young stem may be related to water retention necessary for its development, rather than to physical support of the plant.

Wide-band tracheids (WBTs) of photosynthetic and non-photosynthetic stems in species of Cactaceae

ARRUDA, E. AND G. F. A. MELO-DE-PINNA (Departamento de Botanica, Instituto de Biociencias. Universidade de Sao Paulo, Rua do Matao, travessa 14, Cidade Universitaria, Butanta, Caixa Postal 11461, 05422-970. Sao Paulo, SP, Brasil). Wide-band tracheids (WBTs) of the photosynthetic and non-photosynthetic stems in species of Cactaceae. J. Torrey Bat. Soc. 137: 16-29. 2010.-The absence of WBTs and wood polymorphisms in some species of the Caryophyllales may be related to the particular area of plant analyzed. The present research has the objective of studying the photosynthetic and non-photosynthetic stems of different species and stages of differentiation to register wood polymorphisms and to understand the distribution and occurrence of WBTs. Wood polymorphism was observed in the non-photosynthetic stern of young and adult plants of Opuntioideae and Cactoideae and is also found in the photosynthetic stem of young plants of some species of Cactoideae. Cactoideae present WBT/fibrous dimorphic wood that can be related to cambial variation associated with growth habits and plant development. As expected, in the photosynthetic stem of the adult columnar cacti the wood is monomorphic fibrous in which WBTs were not found. This wood contains a great amount of fibers due to necessity of the mechanical support. In contrast, the globular species do not possess fibers in this area of the stem in either adult or young plants. Opuntia monacantha Haw. had non-fibrous wood in which WBTs were observed in the axial system and in the inner parts of the rays. Fiber clusters were present in the axial system. This wood represents a variation in the wood types described for Opuntioideae. Also, in O. monacantha, cells similar to the WBTs were observed in the pith, which can be interpreted as variation in the morphogenic processes during the ontogeny of the plant, probably a case of homeosis. Monomorphic fibrous wood without WBTs was found along the entire stem of Pereskia bahiensis Gurke. This feature has been observed in other pereskias, and in addition to the others, indicates its proximity to the ancestral cacti.

MAGNETIC FIELD INDUCED NEAR-BAND-GAP OPTICAL PROPERTIES IN EuTe LAYERS

The magnetic response of the near-band-edge optical properties is studied in EuTe layers. In several magneto-optical experiments, the absorption and emission are described as well as the related Stokes shift. Specifically, we present the first experimental report of the photoluminescence excitation (PLE) spectrum in Faraday configuration. The PLE spectra shows to be related with the absorption spectra through the observation of resonance between the excitation light and the zero-field band-gap. A new emission line appears at 1.6 eV at a moderate magnetic field in the photoluminescence (PL) spectra. Furthermore, we examine the absorption and PL red-shift induced by the magnetic field in the light of the d-f exchange interaction energy involved in these processes. Whereas the absorption red-shift shows a quadratic dependence on the field, the PL red-shift shows a linear dependence which is explained by spin relaxation of the excited state.

Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Strain- and electric field-induced band gap modulation in nitride nanomembranes

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.

Desenvolvimento e otimização de materiais nanocristalinos para células solares sensibilizadas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Inorganic Graphenylene: A Porous Two-Dimensional Material With Tunable Band Gap

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces

The competition between confinement potential fluctuations and band-gap renormalization (BGR) in GaAs/AlxGa1-xAs quantum wells grown on [1 0 0] and [3 1 1]A GaAs substrates is evaluated. The results clearly demonstrate the coexistence of the band-tail states filling related to potential fluctuations and the band-gap renormalization caused by an increase in the density of photogenerated carriers during the photoluminescence (PL) experiments. Both phenomena have strong influence on temperature dependence of the PL-peak energy (E-PL(T)). As the photon density increases, the E-PL can shift to either higher or lower energies, depending on the sample temperature. The temperature at which the displacement changes from a blueshift to a redshift is governed by the magnitude of the potential fluctuations and by the variation of BGR with excitation density. A simple band-tail model with a Gaussian-like distribution of the density of state was used to describe the competition between the band-tail filling and the BGR effects on E-PL(T). (C) 2012 Elsevier B.V. All rights reserved.

GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations

Among all magnetic semiconductors, GaMnAs seems to be the most important one. In this work, we present accurate first-principles calculations of GaMnAs within the GGA-1/2 approach: We concentrate our efforts in obtaining the position of the peak of Mn-d levels in the valence band and also the majority spin band gap. For the position of the Mn-d peak, we find a value of 3.3 eV below the Fermi level, in good agreement with the most recent experimental results of 3.5 and 3.7 eV. An analytical expression that fits the calculated E-g(x) for majority spin is derived in order to provide ready access to the band gap for the composition range from 0 to 0.25. We found a value of 3.9 eV for the gap bowing parameter. The results agree well with the most recent experimental data. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718602]

Diseño de un amplificador distribuido para ultra wide band basado en HBT de la tecnología SIGE 0.35 μm de AMS

Memoria y presentación del Proyecto Fin de Carrera titulado "DISEÑO DE UN AMPLIFICADOR DISTRIBUIDO PARA ULTRA WIDE BAND BASADO EN HBT DE LA TECNOLOGÍA SIGE 0.35 μm DE AMS"

Design of radio frequency integrated circuits for ultra wide band communications

Programa de doctorado: Tecnologías de Telecomunicación Avanzadas

Spectrum shaping and its application: spread-spectrum clock generator and circuits for ultra wide band

Electromagnetic spectrum can be identified as a resource for the designer, as well as for the manufacturer, from two complementary points of view: first, because it is a good in great demand by many different kind of applications; second, because despite its scarce availability, it may be advantageous to use more spectrum than necessary. This is the case of Spread-Spectrum Systems, those systems in which the transmitted signal is spread over a wide frequency band, much wider, in fact, than the minimum bandwidth required to transmit the information being sent. Part I of this dissertation deals with Spread-Spectrum Clock Generators (SSCG) aiming at reducing Electro Magnetic Interference (EMI) of clock signals in integrated circuits (IC) design. In particular, the modulation of the clock and the consequent spreading of its spectrum are obtained through a random modulating signal outputted by a chaotic map, i.e. a discrete-time dynamical system showing chaotic behavior. The advantages offered by this kind of modulation are highlighted. Three different prototypes of chaos-based SSCG are presented in all their aspects: design, simulation, and post-fabrication measurements. The third one, operating at a frequency equal to 3GHz, aims at being applied to Serial ATA, standard de facto for fast data transmission to and from Hard Disk Drives. The most extreme example of spread-spectrum signalling is the emerging ultra-wideband (UWB) technology, which proposes the use of large sections of the radio spectrum at low amplitudes to transmit high-bandwidth digital data. In part II of the dissertation, two UWB applications are presented, both dealing with the advantages as well as with the challenges of a wide-band system, namely: a chaos-based sequence generation method for reducing Multiple Access Interference (MAI) in Direct Sequence UWB Wireless-Sensor-Networks (WSNs), and design and simulations of a Low-Noise Amplifier (LNA) for impulse radio UWB. This latter topic was studied during a study-abroad period in collaboration with Delft University of Technology, Delft, Netherlands.