Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy

For the InAs/GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has been observed clearly in RDS, from which its transition energy and in-plane optical anisotropy (OA) are determined. The evolution of WL with the InAs dot formation and ripening has been discussed. In addition, the remarkable changes in OA at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the WL and the dots.

Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer

A new self-assembled quantum dots system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix has been fabricated. The photoluminescence linewidth increases with increasing temperature, which is very different from normal In(Ga)As/GaAs quantum dots. The results are attributed to a higher energy of the wetting layer which breaks the carrier transfer channel between dots and keeps the dots more isolated from each other.

Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

High-quality GaN epilayers were grown on Si (1 1 1) substrate by metalorganic chemical vapor deposition. The growth process was featured by using an ultrathin AlN wetting layer (WL) in combination with a low-temperature (LT) GaN nucleation layer (NL). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the GaN (0 0 0 2) diffraction was 15 arcmin. The dislocation density estimated from TEM investigation was found to be of the order of 10(9)cm(-2). The FWHM of the dominant band edge emission peak of the GaN was measured to be 47 meV by photoluminescence measurement at room temperature. The ultrathin AlN WL was produced by nitridation of the aluminium pre-covered substrate surface. The reflection high-energy electron diffraction showed that the AlN WL was wurtzite and the surface morphology was like the nitridated surface of sapphire by the atomic force microscopy measurement. X-ray photoelectron spectroscopy measurement showed that Si and SixNy at a certain concentration were intermixed in the AlN WL. This study suggests that by employing an appropriate WL combined with a LT NL, high-quality heteroepitaxy is achievable even with large mismatch. (C) 2002 Elsevier Science B.V. All rights reserved.

Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer

We have developed a new self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of the photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer.

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

We have fabricated a new self-assembled quantum dot system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix. The low-temperature photoluminescence and atomic force microscopy measurements confirm the realization of the structure. In contrast to traditional InAs/Ga(Al)As quantum dots, the temperature dependence of the photoluminescence of the dots in such a structure exhibits an electronically decoupled feature due to a higher energy level of the wetting layer which keeps the dots more isolated from each other. (C) 2001 Published by Elsevier Science B.V.

Morphology and wetting layer properties of InAs/GaAs nanostructures

In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C.

Precursor Film in Dynamic Wetting, Electrowetting, and Electro-Elasto-Capillarity

Dynamic wetting and electrowetting are explored using molecular dynamics simulations. The propagation of the precursor film (PF) is fast and obeys the power law with respect to time. Against the former studies, we find the PF is no slip and solidlike. As an important application of the PF, the electro-elasto-capillarity, which is a good candidate for drug delivery at the micro- or nanoscale, is simulated and realized for the first time. Our findings may be one of the answers to the Huh-Scriven paradox and expand our knowledge of dynamic wetting and electrowetting.

Theoretical foundation of Zisman's empirical equation for wetting of liquids on solid surfaces

Theories of wetting of liquids on solid surfaces under the condition that van der Waals force is dominant are briefly reviewed. We show theoretically that Zisman's empirical equation for wetting of liquids on solid surfaces is a linear approximation of the Young-van der Waals equation in the wetting region, and we express the two parameters in Zisman's empirical equation in terms of the dielectric polarizabilities of the solid and liquids. The materials contained in this paper are suitable for physics teaching of wetting phenomena for undergraduate, graduate, general physicist, etc.

A stable PEO-tethered PDMS surface having controllable wetting property by a swelling-deswelling process

A PEO-tethered layer on a PDMS (polydimethylsiloxane) cross-linked network has been prepared by a swelling-deswelling process. During swelling, the PDMS block of a PDMS-b-PEO diblock copolymer penetrates into the PDMS substrate and interacts with PDMS chains because of the van der Waals force and hydrophobic interaction between them. Upon deswelling, the PDMS block is trapped in the PDMS matrix while the PEO, as a hydrophilic block, is tethered to the surface. The PEO-tethered layer showed stability when treated in water for 16 h. The surface fraction of PEO and the wetting property of the PEO-tethered PDMS surface can be controlled by the cross linking density of the PDMS matrix. A patterned PEO-tethered layer on a PDMS network was also created by microcontact printing and water condensation figures (CFs) were used to study the patterned surface with different wetting properties.

Wetting and Reaction of Sn-2.8Ag-0.5Cu-1.0Bi Solder with Cu and Ni Substrates

The wettability of newly developed Sn-2.8Ag-0.5Cu-1.0Bi lead-free solder on Cu and Ni substrates was assessed through the wetting balance tests. The wettability assessment parameters such as contact angle (ϑc) and maximum wetting force (Fw) were documented for three solder bath temperatures with three commercial fluxes, namely, no-clean (NC), nonactivated (R), and water-soluble organic acid flux (WS). It was found that the lead-free Sn-2.8Ag-0.5Cu-1.0Bi solder exhibited less wetting force, i.e., poorer wettability, than the conventional Sn-37Pb solder for all flux types and solder bath temperatures. The wettability of Sn-2.8Ag-0.5Cu-1.0Bi lead-free solder on Cu substrate was much higher than that on Ni substrate. Nonwetting for Sn-2.8Ag-0.5Cu-1.0Bi and Sn-Pb solders on Ni substrate occurred when R-type flux was used. A model was built and simulations were performed for the wetting balance test. The simulation results were found very close to the experimental results. It was also observed that larger values of immersion depth resulted in a decrease of the wetting force and corresponding meniscus height, whereas the increase in substrate perimeter enhanced the wettability. The wetting reactions between the solder and Cu/Ni substrates were also investigated, and it was found that Cu atoms diffused into the solder through the intermetallic compounds (IMCs) much faster than did the Ni atoms. Rapid formation of IMCs inhibited the wettability of Sn-2.8Ag-0.5Cu-1.0Bi solder compared to the Sn-Pb solder.

Comparative wetting behavior of Sn-0.7Cu and Sn-0.7Cu-0.3Ni solders on Cu and Ni substrates

Electronic packaging industries are now in great challenge to find a suitable lead-free solder as an interconnection material to replace the conventional SnPb solders. Many solders such as SnCu, SnAg, SnAgCu, SnZn, SnBi have already been proposed as the replacement but none of them has reached the physical and metallurgical properties similar to the SnPb solder. However, wetting is one of the basic problems that make the lead-free solder inferior as compared to the SnPb solder. Therefore, alloying with the help of third, fourth or fifth element is the researchers' interest to improve the wetting behavior of lead-free solders. This paper describes the comparative wetting behavior of Sn-0.7Cu and Sn-0.7Cu-0.3Ni solders on Cu and Ni substrates. Wetting balance tests were performed to assess the wetting behaviors. Three different commercial fluxes namely no-clean (NC), non-activated (R) and water soluble organic acid (WS)fluxes were used to assess the wettability for three solder bath temperatures. It was found that Sn0.7Cu-03Ni solder exhibits better wettability on Cu substrate for NC and WS fluxes whereas reverse results were found for R-type flux. In the case of Ni substrate, Sn-0.7Cu-0.3Ni solder showed better wetting behavior compared to the well-known Sn-0.7Cu solder. Among the three fluxes, R-type flux showed the worst performance. Very large contact angles were documented for both solders with this flux. Higher solder bath temperature lowered the contact angles, increased the wetting forces and enhanced the wettability. Computer modeling of wetting balance test revealed that both the wetting force and meniscus height are inversely proportional to the contact angles. Modeling results also reveal that increase in solder bath depths and radiuses do not affect significantly on the wetting behavior.

Effect of adding 0.3 wt% Ni into the Sn–0.7 wt%Cu solder: part I: wetting behavior on Cu and Ni substrates

Comparative wetting behavior of Sn-0.7Cu and Sn-0.7Cu-0.3Ni solders on Cu and Ni substrates were assessed through the wetting balance test. No-clean (NC), non-activated (R) and water soluble organic acid (WS) fluxes were used to assess the wetting behavior for three different solder bath temperatures of 255, 275 and 295 °C. Experimental results unveiled that adding of 0.3 wt% Ni into Sn-0.7Cu solder can improve the wetting on Cu substrate when NC and WS fluxes are used. However, such addition of Ni did not improve the wetting of Sn-0.7Cu solder for R-type flux. In the case of Ni substrate, addition of Ni helped to improve the wetting for all three types of fluxes as higher wetting forces were documented for Sn-0.7Cu-0.3Ni solder compared to the Sn-0.7Cu solder. Among the fluxes, worst performance was observed for R-type flux. Very large contact angles were recorded for both solders with this kind of flux. Experimental results also revealed that higher solder bath temperature played an important role to lower the contact angle, to increase the wetting force and to enhance the wetting. Computer modeling of wetting balance test also revealed that both the wetting force and meniscus height are inversely proportional to the contact angles. Besides, solder bath depth and radius do not affect significantly on the wetting behavior.

Effect of adding 0.3wt% Ni into the Sn-0.7wt% Cu solder - Part II: Growth of intermetallic layer with Cu during wetting and aging

The growth behavior of intermetallic layer with or without adding 0.3 wt% Ni into the Sn-0.7Cu solder was studied during the wetting reaction on Cu-substrate and thereafter in solid-state aging condition. The Cu-solder reaction couple was prepared at 255, 275 and 295 °C for 10 s. The samples reacted at 255 °C were then isothermally aged for 2-14 days at 150 °C. The reaction species formed for the Sn-0.7Cu/Cu and Sn-0.7Cu-0.3Ni/Cu soldering systems were Cu6Sn5 and (CuNi)6Sn5, respectively. The thickness of the intermetallic compounds formed at the solder/Cu interfaces and also in the bulk of both solders increased with the increase of reaction temperature. It was found that Ni-containing Sn-0.7Cu solder exhibited lower growth of intermetallic layer during wetting and in the early stage of aging and eventually exceeded the intermetallic layer thickness of Sn-0.7Cu/Cu soldering system after 6 days of aging. As the aging time proceeds, a non-uniform intermetallic layer growth tendency was observed for the case of Sn-0.7Cu-0.3Ni solder. The growth behavior of intermetallic layer during aging for both solders followed the diffusion-controlled mechanism. The intermetallic layer growth rate constants for Sn-0.7Cu and Sn-0.7Cu-0.3Ni solders were calculated as 1.41 × 10-17 and 1.89 × 10-17 m2/s, respectively which indicated that adding 0.3 wt% Ni with Sn-0.7Cu solder contributed to the higher growth of intermetallic layer during aging. © 2006 Elsevier B.V. All rights reserved.