Effect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramic

The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.

Influence of Ta2O5 on the electrical properties of ZnO- and CoO-doped SnO2 varistors

SnO2-based varistors doped with 0.5% cobalt, 0.5% zinc and various tantalum amounts were prepared by the solid-state route. Experimental evidence shows that small quantities of Ta2O5 improve the nonlinear properties of the samples significantly. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1050 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.

Nonlinear behavior of TiO2 center dot Ta2O5 center dot MnO2 material doped with BaO and Bi2O3

A study was made on the effect of the addition of BaO (0.025-0.05 mol%) and Bi2O3 (0.025-0.05 mol%) to the TiO2.Ta2O5.MnO2 material. The samples were characterized by X-ray diffraction, and current-voltage measurements were accomplished for determination of the nonlinear coefficient. An analysis was made to evaluate the microstructural characteristics of the materials. The most appropriate sintering conditions for the materials were analyzed with the purpose of obtaining the best nonlinear coefficient associated with the smallest breakdown electric field. After sintering at 1400 degreesC for 2 h, a low-voltage (30 V cm(-1)) varistor was obtained, which, however, presented a low nonlinear coefficient (6). It was found that the sintering conditions must be controlled in order to improve the electrical properties of these materials. (C) 2004 Elsevier B.V. All rights reserved.

Structural and Spectroscopic Properties of Luminescent Er3+-Doped SiO2-Ta2O5 Nanocomposites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Color tunability of intense upconversion emission from Er3+-Yb3+ co-doped SiO2-Ta2O5 glass ceramic planar waveguides

This work reports on the infrared-to-visible CW frequency upconversion from planar waveguides based on Er3+-Yb3+-doped 100-xSiO(2)-xTa(2)O(5) obtained by a sol-gel process and deposited onto a SiO2-Si substrate by dip-coating. Surface morphology and optical parameters of the planar waveguides were analyzed by atomic force microscopy and the m-line technique. The influence of the composition on the electronic properties of the glass-ceramic films was followed by the band gap ranging from 4.35 to 4.51 eV upon modification of the Ta2O5 content. Intense green and red emissions were detected from the upconversion process for all the samples after excitation at 980 nm. The relative intensities of the emission bands around 550 nm and 665 nm, assigned to the H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2) transitions, depended on the tantalum oxide content and the power of the laser source at 980 nm. The upconversion dynamics were investigated as a function of the Ta2O5 content and the number of photons involved in each emission process. Based on the upconversion emission spectra and 1931CIE chromaticity diagram, it is shown that color can be tailored by composition and pump power. The glass ceramic films are attractive materials for application in upconversion lasers and near infrared-to-visible upconverters in solar cells.

Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

Novel Ti/Ta2O5-SnO2 electrodes for water electrolysis and electrocatalytic oxidation of organics

Mixed metal oxide (MMO) electrodes have been applied to different technologies including chlorine production, organic compounds oxidation, water electrolysis, electroplating, etc. due to their catalytic, optical and electronic properties. Most of the existing MMO electrodes contain either toxic metals or precious metals of the platinum group. The aim of this study was to develop environmentally friendly and cost-effective MMO electrodes for water and organic compounds oxidation. Ti/Ta2O5-SnO2 electrodes of different nominal composition were prepared, and electrochemically and physically characterized. For water oxidation, Ti/SnO2 electrode with 5 at.% of Ta produced the highest electroactivity. Ti/SnO2 electrode with 7.5 at.% of Ta showed the best performance for the oxidation of methylene blue (MB). The electrocatalytic activity of the Ti/Ta2O5-SnO2 electrodes increased with the number of active layers. The maximum current of water oxidation reached 3.5 mA at 2.5 V when the electrode was covered with ten layers of Ta2O5. In case of the oxidation of 0.1 mM MB, eight and ten active layers of Ta2O5 significantly increased the electrode activity. The prepared electrodes have been found applicable for both water electrolysis and organic compounds oxidation.

Ultrasound-assisted electrochemical treatment of wastewaters containing organic pollutants by using novel Ti/Ta2O5-SnO2 electrodes

Advanced oxidation processes (AOPs) are modern methods using reactive hydroxyl radicals for the mineralization of organic pollutants into simple inorganic compounds, such as CO2 and H2O. Among AOPs electrochemical oxidation (EO) is a method suitable for coloured and turbid wastewaters. The degradation of pollutants occurs on electrocatalytic electrodes. The majority of electrodes contain in their structure either expensive materials (diamond and Pt-group metals) or are toxic for the environment compounds (Sb or Pb). One of the main disadvantages of electrochemical method is the polarization and contamination of electrodes due to the deposition of reaction products on their surface, which results in diminishing of the process efficiency. Ultrasound combined with the electrochemical degradation process eliminates electrode contamination because of the continuous mechanical cleaning effect produced by the formation and collapse of acoustic cavitation bubbles near to the electrode surface. Moreover, high frequency ultrasound generates hydroxyl radicals at water sonolysis. Ultrasound-assisted EO is a non-selective method for oxidation of different organic compounds with high degradation efficiencies. The aim of this research was to develop novel sustainable and cost-effective electrodes working as electrocatalysts and test their activity in electrocatalytic oxidation of organic compounds such as dyes and organic acids. Moreover, the goal of the research was to enhance the efficiency of electrocatalytic degradation processes by assisting it with ultrasound in order to eliminate the main drawbacks of a single electrochemical oxidation such as electrodes polarization and passivation. Novel Ti/Ta2O5-SnO2 electrodes were developed and found to be electrocatalytically active towards water (with 5% Ta content, 10 oxide film layers) and organic compounds oxidation (with 7.5% Ta content, 8 oxide film layers) and therefore these electrodes can be applicable in both environmental and energy fields. The synergetic effect of combined electrolysis and sonication was shown while conducting sonoelectrochemical (EO/US) degradation of methylene blue (MB) and formic acid (FA). Complete degradation of MB and FA was achieved after 45 and 120 min of EO/US process respectively in neutral media. Mineralization efficiency of FA over 95% was obtained after 2 h of degradation using high frequency ultrasound (381, 863, 1176 kHz) combined with 9.1 mA/cm2 current density. EO/US degradation of MB provided over 75% mineralization in 8 h. High degradation kinetic rates and mineralization efficiencies of model pollutants obtained in EO/US experiments provide the preconditions for further extrapolation of this treatment method to pilot scale studies with industrial wastewaters.

Fabrication and Pseudo-Analog Characteristics of Ta2O5 -Based ReRAM Cell

Memristori on yksi elektroniikan peruskomponenteista vastuksen, kondensaattorin ja kelan lisäksi. Se on passiivinen komponentti, jonka teorian kehitti Leon Chua vuonna 1971. Kesti kuitenkin yli kolmekymmentä vuotta ennen kuin teoria pystyttiin yhdistämään kokeellisiin tuloksiin. Vuonna 2008 Hewlett Packard julkaisi artikkelin, jossa he väittivät valmistaneensa ensimmäisen toimivan memristorin. Memristori eli muistivastus on resistiivinen komponentti, jonka vastusarvoa pystytään muuttamaan. Nimens mukaisesti memristori kykenee myös säilyttämään vastusarvonsa ilman jatkuvaa virtaa ja jännitettä. Tyypillisesti memristorilla on vähintään kaksi vastusarvoa, joista kumpikin pystytään valitsemaan syöttämällä komponentille jännitettä tai virtaa. Tämän vuoksi memristoreita kutsutaankin usein resistiivisiksi kytkimiksi. Resistiivisiä kytkimiä tutkitaan nykyään paljon erityisesti niiden mahdollistaman muistiteknologian takia. Resistiivisistä kytkimistä rakennettua muistia kutsutaan ReRAM-muistiksi (lyhenne sanoista resistive random access memory). ReRAM-muisti on Flash-muistin tapaan haihtumaton muisti, jota voidaan sähköisesti ohjelmoida tai tyhjentää. Flash-muistia käytetään tällä hetkellä esimerkiksi muistitikuissa. ReRAM-muisti mahdollistaa kuitenkin nopeamman ja vähävirtaiseman toiminnan Flashiin verrattuna, joten se on tulevaisuudessa varteenotettava kilpailija markkinoilla. ReRAM-muisti mahdollistaa myös useammin bitin tallentamisen yhteen muistisoluun binäärisen (”0” tai ”1”) toiminnan sijaan. Tyypillisesti ReRAM-muistisolulla on kaksi rajoittavaa vastusarvoa, mutta näiden kahden tilan välille pystytään mahdollisesti ohjelmoimaan useampia tiloja. Muistisoluja voidaan kutsua analogisiksi, jos tilojen määrää ei ole rajoitettu. Analogisilla muistisoluilla olisi mahdollista rakentaa tehokkaasti esimerkiksi neuroverkkoja. Neuroverkoilla pyritään mallintamaan aivojen toimintaa ja suorittamaan tehtäviä, jotka ovat tyypillisesti vaikeita perinteisille tietokoneohjelmille. Neuroverkkoja käytetään esimerkiksi puheentunnistuksessa tai tekoälytoteutuksissa. Tässä diplomityössä tarkastellaan Ta2O5 -perustuvan ReRAM-muistisolun analogista toimintaa pitäen mielessä soveltuvuus neuroverkkoihin. ReRAM-muistisolun valmistus ja mittaustulokset käydään läpi. Muistisolun toiminta on harvoin täysin analogista, koska kahden rajoittavan vastusarvon välillä on usein rajattu määrä tiloja. Tämän vuoksi toimintaa kutsutaan pseudoanalogiseksi. Mittaustulokset osoittavat, että yksittäinen ReRAM-muistisolu kykenee binääriseen toimintaan hyvin. Joiltain osin yksittäinen solu kykenee tallentamaan useampia tiloja, mutta vastusarvoissa on peräkkäisten ohjelmointisyklien välillä suurta vaihtelevuutta, joka hankaloittaa tulkintaa. Valmistettu ReRAM-muistisolu ei sellaisenaan kykene toimimaan pseudoanalogisena muistina, vaan se vaati rinnalleen virtaa rajoittavan komponentin. Myös valmistusprosessin kehittäminen vähentäisi yksittäisen solun toiminnassa esiintyvää varianssia, jolloin sen toiminta muistuttaisi enemmän pseudoanalogista muistia.

Estudo sobre a redução aluminotérmica de Ta2O5 e TiO2 usando descarga de cátodo oco

In this study it was used two metallic oxides, Ta2O5 and TiO2, in order to obtain metallic powders of Ta and Ti through aluminothermic reduction ignited by plasma. Ta2O5 and TiO2 powders were mixed with Al in a planetary mill, using different milling times. A thermal analysis study (DTA and TG) was carried out, in order to know the temperature to react both the mixtures. Then, these mixtures were submitted to a hollow cathode discharge, where they were reacted using aluminothermic reduction ignited by plasma. The product obtained was characterized by XRD and SEM, where it was proven the possibility of producing these metallic particles, different from the conventional process, where metallic ingots are obtained. It was verified that the aluminothermic reduction ignited by plasma is able to produce metallic powders of Ta and Ti, and a higher efficiency was observed to the process with Ta2O5-Al mixtures. Among different microstructural aspects observed, it can be noted the presence of metallic nanoparticles trapped into an Al2O3 matrix, besides acicular structures (titanium) and dendritic structures (tantalum), which are a product characteristic from a fast cooling

Energy Loss Function of Solids Assessed by Ion Beam Energy-Loss Measurements: Practical Application to Ta2O5

We present a study where the energy loss function of Ta2O5, initially derived in the optical limit for a limited region of excitation energies from reflection electron energy loss spectroscopy (REELS) measurements, was improved and extended to the whole momentum and energy excitation region through a suitable theoretical analysis using the Mermin dielectric function and requiring the fulfillment of physically motivated restrictions, such as the f- and KK-sum rules. The material stopping cross section (SCS) and energy-loss straggling measured for 300–2000 keV proton and 200–6000 keV helium ion beams by means of Rutherford backscattering spectrometry (RBS) were compared to the same quantities calculated in the dielectric framework, showing an excellent agreement, which is used to judge the reliability of the Ta2O5 energy loss function. Based on this assessment, we have also predicted the inelastic mean free path and the SCS of energetic electrons in Ta2O5.

Phase relations in the system Ta-Rh-O and thermodynamic properties of TaRhO4

Phase relations in the system Ta-Rh-O were determined by analysis of quenched samples corresponding to thirteen compositions inside the ternary triangle after equilibration at 1273 K. All the Ta-Rh alloys were found to be in equilibrium with Ta2O5. Only one ternary oxide TaRhO4 was detected. Based on phase relations in the ternary system, a solid-state electrochemical cell, incorporating calcia-stabilized zirconia as the electrolyte, was designed to measure the standard Gibbs energy of formation (Delta G degrees, J mol(-1)) of TaRhO4 in the temperature range from 900 to 1300 K. For the reaction, 1/2 beta-Ta2O5 + 1/2 Rh2O3(ortho) -> TaRhO4 Delta G degrees = -42993 + 5.676T (+/- 85) The calculated decomposition temperatures of TaRhO4 are 1644 +/- 5K in pure O-2 and 1543 +/- 5K in air at a total pressure p(o) = 0.1 MPa. Thermodynamic properties of TaRhO4 at 298.15K have been evaluated from the results. The limited experimental thermodynamic data for Rh-rich alloys available in the literature are in fair accord with Miedema's model. The Gibbs energies of formation of the different phases in the binary system Ta-Rh were estimated based on these inputs, consistent with the binary phase diagram. Based on the thermodynamic information on the stability of various phases, an oxygen potential diagram for the system Ta-Rh-O at 1273K was constructed. Also presented are temperature-composition diagrams for the ternary system at constant oxygen partial pressures (po(2)/p(o) = 0.212 and 10(-6)) calculated form the basic data.

Atomic Layer Deposition for optical applications: metal fluoride thin films and novel devices

Thin films of various metal fluorides are suited for optical coatings from infrared (IR) to ultraviolet (UV) range due to their excellent light transmission. In this work, novel metal fluoride processes have been developed for atomic layer deposition (ALD), which is a gas phase thin film deposition method based on alternate saturative surface reactions. Surface controlled self-limiting film growth results in conformal and uniform films. Other strengths of ALD are precise film thickness control, repeatability and dense and pinhole free films. All these make the ALD technique an ideal choice also for depositing metal fluoride thin films. Metal fluoride ALD processes have been largely missing, which is mostly due to a lack of a good fluorine precursor. In this thesis, TiF4 precursor was used for the first time as the fluorine source in ALD for depositing CaF2, MgF2, LaF3 and YF3 thin films. TaF5 was studied as an alternative novel fluorine precursor only for MgF2 thin films. Metal-thd (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) compounds were applied as the metal precursors. The films were grown at 175 450 °C and they were characterized by various methods. The metal fluoride films grown at higher temperatures had generally lower impurity contents with higher UV light transmittances, but increased roughness caused more scattering losses. The highest transmittances and low refractive indices below 1.4 (at 580 nm) were obtained with MgF2 samples. MgF2 grown from TaF5 precursor showed even better UV light transmittance than MgF2 grown from TiF4. Thus, TaF5 can be considered as a high quality fluorine precursor for depositing metal fluoride thin films. Finally, MgF2 films were applied in fabrication of high reflecting mirrors together with Ta2O5 films for visible region and with LaF3 films for UV region. Another part of the thesis consists of applying already existing ALD processes for novel optical devices. In addition to the high reflecting mirrors, a thin ALD Al2O3 film on top of a silver coating was proven to protect the silver mirror coating from tarnishing. Iridium grid filter prototype for rejecting IR light and Ir-coated micro channel plates for focusing x-rays were successfully fabricated. Finally, Ir-coated Fresnel zone plates were shown to provide the best spatial resolution up to date in scanning x-ray microscopy.

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic beta-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was < 20 nA cm(-2) at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole-Frenkel. (C) 2010 Elsevier Ltd. All rights reserved.

Structural evolution and second harmonic properties of lithium niobate-tantalate nanocrystals embedded in a borate glass

Nano-crystals of LiNbxTa1 (-) O-x(3) were evolved by subjecting melt-quenched 1.5Li(2)O-2B(2)O(3)-xNb(2)O(5)-(1 - x)Ta2O5 glasses (where x = 0, 0.25, 0.5, 0.75 and 1.00) to a controlled 3-h isothermal heat treatment between 530 and 560 degrees C. Detailed X-ray diffraction and Raman spectral studies confirmed the formation of nano-crystalline LiNbxTa1 (-) O-x(3) along with a minor phase of ferroelectric and non-linear optic Li2B4O7. The sizes of the nanocrystals evolved in the glass were in the range of 19-37 nm for x = 0-0.75 and 23-45 nm for x = 1.00. Electron microscopic studies confirmed a transformation of the morphology of the nano-crystallites from dendritic star-shaped spherulites for x = 0 to rod-shaped structures for x = 1.00 brought about by a coalescence of crystallites. Broad Maker-fringe patterns (recorded at 532 nm) were obtained by subjecting the heat-treated glass plates to 1064 nm fundamental radiation. However, an effective second order non-linear optic coefficient, d(eff), of 0.45 pm/V, which is nearly 1.2 times the d(36) of KDP single crystal, was obtained for a 560 degrees C/3 h heat-treated glass of the representative composition x = 0.50 comprising 37 nm sized crystallites. (C) 2015 Elsevier B.V. All rights reserved.