CuxSnSx+1 (x = 2, 3) thin films grown by sulfurization of metallic precursors deposited by dc magnetron sputtering

We report the results of the growth of Cu-Sn-S ternary chalcogenide compounds by sulfurization of dc magnetron sputtered metallic precursors. Tetragonal Cu2SnS3 forms for a maximum sulfurization temperature of 350 ºC. Cubic Cu2SnS3 is obtained at sulfurization temperatures above 400 ºC. These results are supported by XRD analysis and Raman spectroscopy measurements. The latter analysis shows peaks at 336 cm-1, 351 cm-1 for tetragonal Cu2SnS3, and 303 cm-1, 355 cm-1 for cubic Cu2SnS3. Optical analysis shows that this phase change lowers the band gap from 1.35 eV to 0.98 eV. At higher sulfurization temperatures increased loss of Sn is expected in the sulphide form. As a consequence, higher Cu content ternary compounds like Cu3SnS4 grow. In these conditions, XRD and Raman analysis only detected orthorhombic (Pmn21) phase (petrukite). This compound has Raman peaks at 318 cm-1, 348 cm-1 and 295 cm-1. For a sulfurization temperature of 450 ºC the samples present a multi-phase structure mainly composed by cubic Cu2SnS3 and orthorhombic (Pmn21) Cu3SnS4. For higher temperatures, the samples are single phase and constituted by orthorhombic (Pmn21) Cu3SnS4. Transmittance and reflectance measurements were used to estimate a band gap of 1.60 eV. For comparison we also include the results for Cu2ZnSnS4 obtained using similar growth conditions.

Properties of tantalum oxynitride thin films produced by magnetron sputtering: the influence of processing parameters

The main purpose of this work is to present and to interpret the change of structure and physical properties of tantalum oxynitride (TaNxOy) thin films, produced by dc reactive magnetron sputtering, by varying the processing parameters. A set of TaNxOy films was prepared by varying the reactive gases flow rate, using a N2/O2 gas mixture with a concentration ratio of 17:3. The different films, obtained by this process, exhibited significant differences. The obtained composition and the interpretation of X-ray diffraction results, shows that, depending on the partial pressure of the reactive gases, the films are: essentially dark grey metallic, when the atomic ratio (N + O)/Ta < 0.1, evidencing a tetragonal β-Ta structure; grey-brownish, when 0.1 < (N + O)/Ta < 1, exhibiting a face-centred cubic (fcc) TaN-like structure; and transparent oxide-type, when (N + O)/Ta > 1, evidencing the existence of Ta2O5, but with an amorphous structure. These transparent films exhibit refractive indexes, in the visible region, always higher than 2.0. The wear resistance of the films is relatively good. The best behaviour was obtained for the films with (N + O)/Ta ≈ 0.5 and (N + O)/Ta ≈ 1.3.

Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by r.f. sputtering at room temperature

Thin Solid Films, vol. 427, nº 1-2

Growth of the [110] oriented TiO2 nanorods on ITO substrates by sputtering technique for dye-sensitized solar cells

TiO2 films have been deposited on ITO substrates by dc reactive magnetron sputtering technique. It has been found that the sputtering pressure is a very important parameter for the structure of the deposited TiO2 films. When the pressure is lower than 1 Pa, the deposited has a dense structure and shows a preferred orientation along the [101] direction. However, the nanorod structure has been obtained as the sputtering pressure is higher than 1 Pa. These nanorods structure TiO2 film shows a preferred orientation along the [110] direction. The x-ray diffraction and the Raman scattering measurements show both the dense and the nanostructure TiO2 films have only an anatase phase, no other phase has been obtained. The results of the SEM show that these TiO2 nanorods are perpendicular to the ITO substrate. The TEM measurement shows that the nanorods have a very rough surface. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO2 nanorod films prepared at different sputtering pressures as photoelectrode. And the effect of the sputtering pressure on the properties of the photoelectric conversion of the DSSCs has been studied.

Monitorização e otimização da deposição de filmes de óxidos mistos por RF-sputtering

Dissertação para obtenção do Grau de Mestre em Engenharia Física

Al-doped ZnO ceramic sputtering targets based on nanocrystalline powders produced by emulsion detonation synthesis – deposition and application as a transparent conductive oxide material

Transparent conducting oxides (TCOs) have been largely used in the optoelectronic industry due to their singular combination of low electrical resistivity and high optical transmittance. They are usually deposited by magnetron sputtering systems being applied in several devices, specifically thin film solar cells (TFSCs). Sputtering targets are crucial components of the sputtering process, with many of the sputtered films properties dependent on the targets characteristics. The present thesis focuses on the development of high quality conductive Al-doped ZnO (AZO) ceramic sputtering targets based on nanostructured powders produced by emulsion detonation synthesis method (EDSM), and their application as a TCO. In this sense, the influence of several processing parameters was investigated from the targets raw-materials synthesis to the application of sputtered films in optoelectronic devices. The optimized manufactured AZO targets present a final density above 99 % with controlled grain size, an homogeneous microstructure with a well dispersed ZnAl2O4 spinel phase, and electrical resistivities of ~4 × 10-4 Ωcm independently on the Al-doping level among 0.5 and 2.0 wt. % Al2O3. Sintering conditions proved to have a great influence on the properties of the targets and their performance as a sputtering target. It was demonstrated that both deposition process and final properties of the films are related with the targets characteristics, which in turn depends on the initial powder properties. In parallel, the influence of several deposition parameters in the film´s properties sputtered from these targets was investigated. The sputtered AZO TCOs showed electrical properties at room temperature that are superior to simple oxides and comparable to a reference TCO – indium tin oxide (ITO), namely low electrical resistivity of 5.45 × 10-4 Ωcm, high carrier mobility (29.4 cm2V-1s-1), and high charge carrier concentration (3.97 × 1020 cm-3), and also average transmittance in the visible region > 80 %. These superior properties allowed their successful application in different optoelectronic devices.

Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

tThe main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOzthin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposi-tion: the flow of the reactive gases mixture (N2and O2, with a constant concentration ratio of 17:3); thesubstrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel).The obtained films exhibit significant differences. The variation of the deposition parameters inducesvariations of the composition, microstructure and morphology. These differences cause variation of theelectrical resistivity essentially correlated with the composition and structural changes. The gradualdecrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity.The dielectric characteristics of some of the high resistance TaxNyOzfilms were obtained in the sampleswith a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectricTaxNyOzfilms). Some of these films exhibited dielectric constant values higher than those reported forother tantalum based dielectric films.

Production and characterization of ZrCN-Ag coatings deposited by mganetron sputtering

Tese de Doutoramento (Programa doutoral em Engenharia de Materiais)

A determinação espectrofotométrica do cobalto pelo método da 2,2'-dipiridil cetoxima (I) - estudos sobre o reativo, pH e tampão

No presente trabalho foi desenvolvida a primeira fase dos estudos experimentais do método da 2,2'-dipiridil cetoxima, para a determinação do cobalto. Os ensaios foram conduzidos em soluções puras e dentre os aspectos estudados constam; o reativo, preparo, concentração e conservação; o pH, influencia sobre a formação e extração do composto colorido; o sistema tampão, influencia sobre a reação, eficiência e escolha. Numa seqüência, serão apresentados posteriormente estudos sobre solventes, influência de diversos ions e aplicação do método em análises de plantas.

Disponibilidade de fósforo e enxofre para a cultura da soja na presença de fosfato natural reativo, superfosfato triplo e enxofre elementar

Este trabalho teve por objetivo comparar o efeito residual do fosfato natural reativo oriundo do Marrocos (Youssoufia) em relação ao superfosfato triplo sobre a produção de biomassa de aveia, produtividade e componentes da produção da soja, disponibilidade de P e de S no solo, bem como os teores destes nutrientes no tecido foliar da soja. O trabalho constituiu de dois cultivos utilizando a cultura da soja e da aveia, realizados em sistema de cultivo mínimo. O delineamento experimental utilizado foi de blocos inteiramente casualizados, com quatro repetições, com os tratamentos arranjados em fatorial 2 x 4 x 3, ou seja, dois fertilizantes fosfatados, fosfato natural reativo (FNR) e superfosfato triplo (SFT), com quatro doses de cada fertilizante (0, 100, 200 e 300 kg ha-1 de P2O5), e três de S (0, 30 e 60 kg ha-1 S elementar). No tecido foliar, determinaram-se os teores de P e S. No solo, nas profundidades de 0-10 e 10-20 cm, determinou-se o P disponível. Os resultados indicam que, para o primeiro ano, não houve superioridade do SFT sobre o FNR para produtividade e massa de 100 grãos. A aplicação de SFT proporcionou teores crescentes de P no tecido foliar; por outro lado, não houve efeito da aplicação de doses crescentes de FNR no teor de P. O teor de S no tecido foliar aumentou tanto pela adição das doses crescentes de P quanto pelas doses crescentes de S para ambas as fontes (SFT e FNR).

Transparent conducting thin films by the co-sputtering of ZnO-ITO targets

Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67 % as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film.

Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to ~1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering

The substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composition and rf input power. A qualitative explanation of the results is given, based on a simple model, and the role of the stray capacitance is clearly disclosed. Langmuir probe measurements show that this system allows independent control of the ion flux and the ion energy bombarding the growing film. For an argon flow rate of 2.8 sccm and a radio frequency power of 300 W (intermediate values of the range studied) the ion flux incident on the substrate was 1.3 X 1020-m-2-s-1. The maximum ion energy available in these conditions can be varied in the range 30-150 eV. As a practical application of the technique, BN thin films were deposited under different ion bombardment conditions. An ion energy threshold of about 80 eV was found, below which only the hexagonal phase was present in the films, while for higher energies both hexagonal and cubic phase were present. A cubic content of about 60% was found for an ion energy of 120 V.

Eficiência agronômica de fosfato natural reativo na cultura da soja

O objetivo deste trabalho foi avaliar a eficiência agronômica relativa de uma fonte de fósforo na cultura de soja [Glycine max (L.) Merrill.]. O superfosfato triplo foi a fonte-padrão, e o fosfato natural reativo Arad foi a fonte testada, ambos aplicados em diferentes doses, em área total ou no sulco de semeadura. Em outubro de 2004, o experimento foi instalado em Balsas, MA, em Latossolo Vermelho-Amarelo distrófico, textura argilosa e baixa disponibilidade de fósforo, conduzido com soja cultivar BRS Sambaíba por três safras (2004/2005 a 2006/2007); a terceira safra foi conduzida sob efeito residual das aplicações anteriores. De forma geral, não foram observadas diferenças quanto à localização da fonte-padrão, ao passo que a localização do fosfato natural reativo Arad reduziu significativamente a eficiência. Quando aplicado a lanço, nos dois primeiros cultivos, o fosfato natural reativo Arad resultou em aproximadamente 76% de eficiência agronômica relativa, o que demonstra média viabilidade agronômica. Sob efeito residual, a aplicação localizada do superfosfato triplo resultou em resposta semelhante à verificada com a aplicação anual desta fonte, entretanto, o aumento na eficiência agronômica relativa foi mais acentuado, quando ambas as fontes foram aplicadas a lanço.

Eficiência de fosfato natural reativo aplicado em misturas com superfosfato triplo em milho e soja

O objetivo deste trabalho foi avaliar o efeito do modo de aplicação do superfosfato triplo (SFT), do fosfato natural reativo de Gafsa e da mistura entre essas fontes no aproveitamento do fósforo (P) por plantas de milho e de soja. Os experimentos foram realizados em casa de vegetação, e as plantas foram cultivadas em vasos com Latossolo Vermelho-Amarelo distrófico. As fontes fosfatadas foram aplicadas isoladamente ou em misturas (proporção 1:1), à dose de 90 mg kg-1 de P, de modo não localizado ou localizado no solo. Para a quantificação do P absorvido pelas plantas das diferentes fontes, empregaram-se tratamentos com o solo e com o SFT marcados com 32P. O aproveitamento do fósforo do superfosfato triplo aplicado de forma localizada (9,8%) foi superior ao da não localizada (7%). A aplicação não localizada do fosfato natural reativo proporcionou maior aproveitamento do fósforo (3,8%), em comparação à localizada (0,5%). Em comparação à aplicação isolada do fosfato de Gafsa, o aproveitamento do fósforo pelas plantas de milho e soja aumentou quando essa fonte foi aplicada como mistura compactada; em presença do superfosfato triplo, a aplicação do fosfato natural reativo de Gafsa de modo não localizado proporcionou maior aproveitamento do P pelas plantas de soja. O aproveitamento do fósforo do fosfato natural de Gafsa aumenta quando aplicado ao solo com o superfosfato triplo, e esse efeito depende do método de aplicação das fontes fosfatadas.