Low-cost substrates for polycrystalline-silicon solar cells by electrodeposition processes : thord quarterly progress report for April 1 - June 30, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Thin film polycrystalline silicon solar cells : technical progress quarterly report no. 3 for March 25 - June 24, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Thin film polycrystalline silicon solar cells : first technical progress report for April 15 - July 15, 1980.

"Work Performed Under Contract No. AC02-77CH00178."

Thin film polycrystalline silicon solar cells : second technical progress report for July 15 - October 15, 1980.

"Work Performed Under Contract No. AC02-77CH00178."

MIS silicon solar cells : potential advantages /

"Work Performed Under Contract No. EG-77-C-01-4042."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Thin-film polycrystalline silicon solar cells.

"Work Performed Under Contract No. ET-78-C-03-1876."

Amorphous silicon solar cells by hydrogen implantation : final report, January 1, 1979-August 31, 1980 /

"August 1980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.