A dictionary from English to colloquial Mandarin Chinese /

"Published by order of the Inspector General of Customs."

Quarterly trade returns.

The Inspectorate's Annual trade report for 1920-1922 was published with the returns for the Oct./Dec. quarter, 1920-1922.

Li shan yuan shi : 10 juan.

Double leaves, oriental style, in case.

Li shan yuan wen ji qian bian : 8 juan, hou bian : 5 juan, xu ji : 4 juan.

Double leaves, oriental style, in case.

新增第五才子書. 水滸全傳Xin zeng di wu cai zi shu — Shui hu quan zhuan. Autre titre : 征四寇傳Zheng si kou zhuan.Le Shui hu zhuan, édition nouvelle.

Suite du roman, avec préface par Ru lian (1736) ; gravé à la salle Zhen xian.Livres 1 à 10 (hui 67 à 115).

Si mi quan shu.

Block print.

Guan zhong dao mo si zhong shu /

Blockprint.

Shu hua chuan xi lu : [si juan /

Daoguang shi ba nian Ji Chengxian zi xu yan ji bian ke shu shi.

Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals

High optical quality Lu2SiO5 (LSO) and (Lu0.5Gd0.5)(2)SiO5 (LGSO) laser crystals codoped with Er3+ and Yb3+ have been fabricated by the Czochralski method. Intense upconversion (UC) and infrared emission (1543 nm) are observed under excitation of 975 nm. The luminescence processes are explained and the emission efficiencies are quantitatively obtained by measuring the UC efficiency and calculating the emission cross section. The temperature-dependent optical properties of the crystals are also investigated. Our study indicates that Er3+-Yb3+ : LSO and Er3+-Yb3+: LGSO crystals are promising gain media for developing the solid-state 1.5 mu m optical amplifiers and tunable UC lasers. (c) 2008 American Institute of Physics.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural proper-ties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants

Using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-III and group-V impurities doped in H passivated Si quantum dots (QDs) as functions of the QD size. The general chemical trends found in the QDs are similar to that found in bulk Si. We show that defect formation energy and transition energy level increase when the size of the QD decreases; thus, doping in small Si QDs becomes more difficult. B-Si has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the H passivated Si QD. On the other hand, P-Si has the smallest donor ionization energy, and it prefers to stay at the interior of the H passivated Si QD. We explained the general chemical trends and the dependence on the QD size in terms of the atomic chemical potentials and quantum confinement effects.

沈微垣先生規正圖註王叔和難經脉訣大全Shen wei yuan xian sheng gui zheng tu zhu wang shu he nan jing mo jue da quan.Le Mo jue et le Nan jing, édition collective.

Contient : I刪註脈訣規正Shan zhu mo jue gui zheng.Le Mo jue corrigé ; II圖註八十一難經Tu zhu ba shi yi nan jing.Le Nan jing illustré, en 81 sections

輕世金書Qing shi jin shu.

Même ouvrage ; table en tête de chaque livre ; à la fin préface de Fang Ji si.

Suan xue shu mu ti yao : san juan /

Mode of access: Internet.