998 resultados para SEMICONDUCTOR OPTICAL AMPLIFIERS
Resumo:
This thesis presents experimental investigations of the use of semiconductor optical amplifiers in a nonlinear loop mirror (SOA-NOLM) and its application in all-optical processing. The techniques used are mainly experimental and are divided into three major applications. Initially the semiconductor optical amplifier, SOA, is experimentally characterised and the optimum operating condition is identified. An interferometric switch based on a Sagnac loop with the SOA as the nonlinear element is employed to realise all-optical switching. All-optical switching is a very attractive alternative to optoelectronic conversion because it avoids the conversion from the optical to the electronic domain and back again. The first major investigation involves a carrier suppressed return to zero, CSRZ, format conversion and transmission. This study is divided into single channel and four channel WDM respectively. The optical bandwidth which limits the conversion is investigated. The improvement of the nonlinear tolerance in the CSRZ transmission is shown which shows the suitability of this format for enhancing system performance. Second, a symmetrical switching window is studied in the SOA-NOLM where two similar control pulses are injected into the SOA from opposite directions. The switching window is symmetric when these two control pulses have the same power and arrive at the same time in the SOA. Finally, I study an all-optical circulating shift register with an inverter. The detailed behaviour of the blocks of zeros and ones has been analysed in terms of their transient measurement. Good agreement with a simple model of the shift register is obtained. The transient can be reduced but it will affect the extinction ratio of the pulses.
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The behavior of a semiconductor optical amplifier (SOA)-based nonlinear loop mirror with feedback has been investigated as a potential device for all-optical signal processing. In the feedback device, input signal pulses (ones) are injected into the loop, and amplified reflected pulses are fed back into the loop as switching pulses. The feedback device has two stable modes of operation - block mode, where alternating blocks of ones and zeros are observed, and spontaneous clock division mode, where halving of the input repetition rate is achieved. Improved models of the feedback device have been developed to study its performance in different operating conditions. The feedback device could be optimized to give a choice of either of the two stable modes by shifting the arrival time of the switching pulses at the SOA. Theoretically, it was found possible to operate the device at only tens of fJ switching pulse energies if the SOA is biased to produce very high gain in the presence of internal loss. The clock division regime arises from the combination of incomplete SOA gain recovery and memory of the startup sequence that is provided by the feedback. Clock division requires a sufficiently high differential phase shift per unit differential gain, which is related to the SOA linewidth enhancement factor.
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A travelling-wave model of a semiconductor optical amplifier based non-linear loop mirror is developed to investigate the importance of travelling-wave effects and gain/phase dynamics in predicting device behaviour. A constant effective carrier recovery lifetime approximation is found to be reasonably accurate (±10%) within a wide range of control pulse energies. Based on this approximation, a heuristic model is developed for maximum computational efficiency. The models are applied to a particular configuration involving feedback.
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We demonstrate simultaneous demultiplexing, data regeneration and clock recovery at 10Gbits/s, using a single semiconductor optical amplifier–based nonlinear-optical loop mirror in a phase-locked loop configuration.
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Detailed theoretical and numerical investigations of the transmission performance of adaptively modulated optical orthogonal frequency division multiplexed (AMOOFDM) signals are undertaken, for the first time, in optical amplification and chromatic dispersion (CD) compensation free single mode fiber (SMF) intensity-modulated and directdetection (IMDD) systems using two cascaded semiconductor optical amplifiers in a counterpropagating configuration as an intensity modulator (TC-SOA-CC-IM). A theoretical model describing the characteristics of this configuration is developed. Extensive performance comparisons are also made between the TC-SOA-CC and the single SOA intensity modulators. It is shown that, the TC-SOA-CC reaches its strongly saturated region using a lower input optical power much faster than the single SOA resulting in significantly reduced effective carrier lifetime and thus wide TC-SOA-CC bandwidths. It is shown that at low input optical power, we can increase the signal line rate almost 115% which will be more than twice the transmission performance offered by single SOA. In addition, the TCSOA-CC-IM is capable of supporting signal line rates higher than corresponding to the SOA-IM by using 10dB lower input optical powers. For long transmission distance, the TC-SOA-CC-IM has much stronger CD compensation capability compared to the SOA-IM. In addition the use of TC-SOA-CC-IM is more effective regarding the capability to benefit from the CD compensation for shorter distances starting at 60km SMF, whilst for the SOA-IM starting at 90km. © 2014 Optical Society of America.
Dark soliton generation from semiconductor optical amplifier gain medium in ring fiber configuration
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We have investigated the mode-lock operation from a semiconductor optical amplifier (SOA) gain chip in the ring fibre configuration. At lower pump currents, the laser generates dark soliton pulses both at the fundamental repetition rate of 39 MHz and supports up to the 6th harmonic order corresponding to 234-MHz repetition rate with an output power of ∼2.1 mW. At higher pump currents, the laser can be switched between the bright, dark and concurrent bright and dark soliton generation regimes.
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Dynamically reconfigurable time-division multiplexing (TDM) dense wavelength division multiplexing (DWDM) long-reach passive optical networks (PONs) can support the reduction of nodes and network interfaces by enabling a fully meshed flat optical core. In this paper we demonstrate the flexibility of the TDM-DWDM PON architecture, which can enable the convergence of multiple service types on a single physical layer. Heterogeneous services and modulation formats, i.e. residential 10G PON channels, business 100G dedicated channel and wireless fronthaul, are demonstrated co-existing on the same long reach TDM-DWDM PON system, with up to 100km reach, 512 users and emulated system load of 40 channels, employing amplifier nodes with either erbium doped fiber amplifiers (EDFAs) or semiconductor optical amplifiers (SOAs). For the first time end-to-end software defined networking (SDN) management of the access and core network elements is also implemented and integrated with the PON physical layer in order to demonstrate two service use cases: a fast protection mechanism with end-to-end service restoration in the case of a primary link failure; and dynamic wavelength allocation (DWA) in response to an increased traffic demand.
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In this report a new automated optical test for next generation of photonic integrated circuits (PICs) is provided by the test-bed design and assessment. After a briefly analysis of critical problems of actual optical tests, the main test features are defined: automation and flexibility, relaxed alignment procedure, speed up of entire test and data reliability. After studying varied solutions, the test-bed components are defined to be lens array, photo-detector array, and software controller. Each device is studied and calibrated, the spatial resolution, and reliability against interference at the photo-detector array are studied. The software is programmed in order to manage both PIC input, and photo-detector array output as well as data analysis. The test is validated by analysing state-of-art 16 ports PIC: the waveguide location, current versus power, and time-spatial power distribution are measured as well as the optical continuity of an entire path of PIC. Complexity, alignment tolerance, time of measurement are also discussed.
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The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ease to fabricate 2-D arrays of this kind of devices. As a consequence, all-optical logic gates based on VCSOAs may be very promising devices for their use in optical computing and optical switching in communications. Moreover, since all the boolean logic functions can be implemented by combining NAND logic gates, the development of a Vertical-Cavity NAND gate would be of particular interest. In this paper, the characteristics of the dispersive optical bistability appearing on a VCSOA operated in reflection are studied. A progressive increment of the number of layers compounding the top Distributed Bragg Reflector (DBR) of the VCSOA results on a change on the shape of the appearing bistability from an S-shape to a clockwise bistable loop. This resulting clockwise bistability has high on-off contrast ratio and input power requirements one order of magnitude lower than those needed for edge-emitting devices. Based on these results, an all-optical vertical-cavity NAND gate with high on-off contrast ratio and an input power for operation of only 10|i\V will be reported in this paper.
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We propose and experimentally demonstrate a potentially integrable optical scheme to generate high order UWB pulses. The technique is based on exploiting the cross phase modulation generated in an InGaAsP Mach-Zehnder interferometer containing integrated semiconductor optical amplifiers, and is also adaptable to different pulse modulation formats through an optical processing unit which allows to control of the amplitude, polarity and time delay of the generated taps.
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In this letter, we propose and experimentally demonstrate a novel and single structure to generate ultra-wideband (UWB) pulses by means of the cross-phase modulation present in a semiconductor optical amplifier unified structure. The key components of this system is an integrated Mach-Zehnder interferometer with two semiconductor optical amplifiers and an optical processing unit. The fusion of these two components permits the generation and customization of UWB monocycle pulses. The polarity of the output pulses is easily modified through the single selection of a specific input port. Moreover, the capacity of transmitting several data sequences is demonstrated and the potentiality to adapt the system to different modulation formats is analyzed.
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The following topics were dealt with: semiconductor growth (MBE, PECVD, MOCVD, MOVPE) and characterizations; high-electron mobility transistors (HEMTs); microcavity organic light emitting diode (MOLED); semiconductor superlattices; photodiode arrays; MEMS structures; lithography;semiconductor lasers; semiconductor optical amplifiers; surface treatment and annealing
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For the first time we demonstrate simultaneous suppression of phase distortion on two independent 10.7 Gbit/s DPSK modulated signal wavelengths using semiconductor optical amplifiers, realizing a compact phase sensitive amplifier with low power consumption.
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Applying direct error counting, we compare the accuracy and evaluate the validity of different available numerical approaches to the estimation of the bit-error rate (BER) in 40-Gb/s return-to-zero differential phase-shift-keying transmission. As a particular example, we consider a system with in-line semiconductor optical amplifiers. We demonstrate that none of the existing models has an absolute superiority over the others. We also reveal the impact of the duty cycle on the accuracy of the BER estimates through the differently introduced Q-factors.