Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

The time dependence of wet oxidized AlGaAs/GaAs in a distributed Bragg reflector (DBR) structure has been studied by mean of transmission electron microscopy and Raman spectroscopy. The wet oxidized AlGaAs transforms from an initial amorphous hydroxide phase to the polycrystalline gamma-Al2O3 phase with the extension of oxidation time. The thickness of oxide layers will contract due to the different volume per Al atom in AlGaAs and in the oxides. In the samples oxidized for 10 and 20 min, there are some fissures along the AlGaAs/GaAs interfaces. In the samples oxidized longer, although no such fissures are present along the interfaces, the whole oxidized DBR delaminates from the buffer. (c) 2005 American Vacuum Society.

Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

The interface of wet oxidized Al0.97Ga0.03As/GaAs in a distributed Bragg reflector (DBR) structure has been studied by means of transmission electron microscopy and Raman spectroscopy. With the extension of oxidation time, the oxide/GaAs interfaces are not abrupt any more. There is an amorphous film near the oxide/GaAs interface, which is Ga2O3 related to the prolonged heating. In the samples oxidized for 10 and 20 min, there are some fissures along the oxidized AlGaAs/GaAs interfaces. In the samples oxidized or in situ annealed for long time, no such fissures are present due to the complete removal of the volatile products.

Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors

The wet oxidation of AlGaAs with high Al content in a distributed Bragg reflectors （DBR） is studied by scanning electron microscopy （SEM） and transmission electron microscopy （TEM）. Some voids distribute along the oxide/GaAs interfaces due to the stress induced by the wet oxidation of the AlGaAs layers. These voids decrease the shrinkage of the Al2O3 layers to 8% instead of the theoretical 20% when compared to the unoxidized AlGaAs layers. With the extension of oxidation time, the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces. As a result,the oxide quality is better.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

Electromagnetic wave diffraction from an infinite array of complex-shaped microstrip reflectors

A numerical-analytical method is developed for solving surface integral equations (IEs) describing electromagnetic wave diffraction from arrays of complex-shaped planar reflectors. Solutions to these equations are regularized via analytical transformation of the separated singular part of the matrix kernel. Basis functions satisfying the metal-edge condition are determined on the entire surface of the complex region. The amplitude and phase responses of arrays consisting of polygonal reflectors are numerically investigated.

Design of engineered reflectors for radar cross section modification

A technique is proposed for the design of engineered reflectors consisting of doubly periodic arrays printed on thin grounded dielectric substrates that reflect an incoming wave from a given incoming direction to a predetermined outgoing direction. The proposed technique is based on a combination of Floquet theory for propagation in periodic structures and reflect-array principles. A flat surface designed to reflect a TE polarized wave incident at 45 back in the direction of the impinging signal at 14.7 GHz is employed as an example. By means of full-wave simulations, it is demonstrated that the monostatic RCS of a finite reflector is comparable with the specular RCS of a metallic mirror of the same dimensions. It is further shown that comparably high monostatic RCS values are obtained for angles of incidence in the 30-60 range, which are frequency dependent and thus open opportunities for target localization. A prototype array is fabricated and experimentally tested for validation. The proposed solution can be used to modify the radar cross section of a target. Other potential applications are also discussed. © 1963-2012 IEEE.

Backscattering Reduction of Corner Reflectors using SCS Technique

Reduction of radar cross -section of dihedral corner reflectors using simulated corrugated surface (.SCS) is reported. This technique is found lo be more effective in the reduction of RCS or corner reflectors for normal incidence . A typical reduction of 40-50 dB is achieved using this method

Corrugated Flanged Horn Feed for Offset Paraboloidal Reflectors

A technique for improving the coupling between a feed horn and reflector by using corrugated metallic flanges is presented. Experimental data for flanges of varying parameters are given and theoretical explanation is supplemented

Backscattering Reduction of Corner Reflectors using SCS Technique

Reduction of radar cross -section of dihedral corner reflectors using simulated corrugated surface (SCS) is reported. The technique is found to be more effective in the reduction of RCS or corner reflectors for normal incidence . A typical reduction of 40-50 dB is achieved using this method.