100 Gb/s uncooled WDM system using conventional WDM components and advanced receiver signal processing

We demonstrate an uncooled WDM system using standard WDM components and receiver signal processing, with a different number of receivers to transmitters, to allow wide temperature drift of the transmitter lasers. A 100 Gb/s 8-wavelength demonstrator has been developed, which proves the feasibility of the approach over 25 km of SMF. © 2012 OSA.

100 Gb/s uncooled WDM system using conventional WDM components and advanced receiver signal processing

We demonstrate an uncooled WDM system using standard WDM components and receiver signal processing, with a different number of receivers to transmitters, to allow wide temperature drift of the transmitter lasers. A 100 Gb/s 8-wavelength demonstrator has been developed, which proves the feasibility of the approach over 25 km of SMF. © 2012 Optical Society of America.

High performance optical data links using hybrid CAP/QAM transmitter/receiver scheme

We experimentally demonstrate the first optical data link at 20Gb/s using hybrid CAP- 4/QAM-4 with transmission over 4.3km SSMF and a power penalty ~1.5dBo at BER=10-9. The hybrid CAP-4/QAM-4 link significantly outperforms a reference PAM-4 link. © OSA 2013.

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

An integrated optical receiver in MS/RF CMOS process

A monolithically integrated optoelectronic receiver was realized utilizing a deep sub-micron MS/RF CMOS process. Novel photo-diode with STI and highspeed receiver circuit were designed. This OEIC takes advantage of several new features to improve the performance.

The application of parallel optical transmitter and receiver modules in communication subsystems

A new 12 channels parallel optical transmitter module in which a Vertical Cavity Surface Emitting Laser (VCSEL) has been selected as the optical source is capable of transmitting 37.5Gbps date over hundreds meters. A new 12 channels parallel optical receiver module in which a GaAs PIN (p-intrinsic-n-type) array has been selected as the optical receiver unit is capable of responding to 30Gbps date. A transmission system based on a 12 channels parallel optical transmitter module and a 12 channels parallel optical receiver module can be used as a 10Gbps STM-64 or an OC-192 optical transponder. The parallel optical modules and the parallel optical transmission system have passed the test in laboratory.