Microstructural changes induced by ternary additions in a hypo-eutectic titanium-silicon alloy

Hypo-eutectic Ti-6.5 wt % Si alloy modified by separate additions of misch metal and low surface tension elements (Na, Sr, Se and Bi) has been examined by microscopic study and thermal analysis. Addition of third element led to modification of microstructure with apparently no significant enhancement of tensile ductility, with the exception of bismuth. Bismuth enhanced the ductility of the alloy by a factor of two and elastic-plastic fracture toughness to 9 MPa m–1/2 from a value of almost zero. The improved ductility of bismuth modified alloy is attributed to the reduced interconnectivity of the eutectic suicide, absence of significant suicide precipitation in the eutectic region and increase in the volume fraction of uniformly distributed dendrites. These changes are accompanied by a decrease in the temperature of eutectic solidification.

Reduction In Metal-Mold Reactivity In Titanium Castings Through The Use Of Sodium Aluminate As Binder In Zircon Sand Molds

The present work is aimed at evaluating an alternative moulding system, namely, sodium aluminate bonded zircon sand mould and assess its suitability in relation to the much studied sodium silicate bonded zircon sand moulding system. It is described in the study presented here that with regard to metal - mould reaction, sodium aluminate bonded zircon sand mould system is a superior viable system as compared to sodium silicate bonded zircon moulding system at mould firing temperatures of 873 - 1473 K.

Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth. (C) 2010 Elsevier Ltd. All rights reserved.

Impurity diffusion in bismuth single-crystals

Measurements of impurity diffusion of 86Rb, 90Sr, 133Ba, and 137Cs in single crystal Bi were carried out. Diffusion samples were prepared from single crystal Bi by ion implantation. About 1012-1013 ions were implanted, resulting in surface activities approx =104 cpm. After implantation, specimens were annealed for specified times at 220-265 deg C, and tracer penetration profiles were determined by an electrolytic method. A typical penetration profile for 137Cs in Bi showed a linear relationship for log C vs x in with Fick's law for volume diffusion. Laws of grain boundary diffusion were not obeyed and the order of magnitude of the penetration distances was much less than on a grain boundary mechanism. Results were interpreted in terms of a modified Fischer analysis using a kinetic trapping term. Effective half lengths for trapping at a twin boundary were determined for each impurity.

Cloning, expression, purification, crystallization and preliminary X-ray studies of a secreted lectin (Rv1419) from Mycobacterium tuberculosis

A secreted lectin, Rv1419, from Mycobacterium tuberculosis has been cloned, expressed, purified and crystallized and the crystals have been characterized. This represents the first X-ray investigation of a lectin or lectin-like molecule from the pathogen. The cubic crystals contain one molecule in the asymmetric unit. Sequence comparisons indicate that the lectin has a beta-trefoil fold and belongs to a well characterized family of carbohydrate-binding modules. Structural analysis of the crystals is in progress.

On the evaluation of stability of rare earth oxides as face coats for investment casting of titanium

Attempts have been made to evaluate the thermal stability of rare earth oxide face coats against liquid titanium. Determination of microhardness profiles and concentration profiles of oxygen and metallic constituents of oxide in investment cast titanium rods has allowed grActation of relative stability of rare earth oxides. The relative stability of evaluated oxides in the order of increasing stability follows the sequence CeO2 — ZrO2 — Gd2O3 — didymium oxide — Sm2O3 —Nd2O3 — Y2O3. The grading does not follow the free energy data of the formation of these oxides. A better correlation with the experimental observations is obtained when the solubility of the metallic species in titanium is also taken into consideration.

Relaxation system based sub-grid scale modelling for large eddy simulation of Burgers' equation

An implicit sub-grid scale model for large eddy simulation is presented by utilising the concept of a relaxation system for one dimensional Burgers' equation in a novel way. The Burgers' equation is solved for three different unsteady flow situations by varying the ratio of relaxation parameter (epsilon) to time step. The coarse mesh results obtained with a relaxation scheme are compared with the filtered DNS solution of the same problem on a fine mesh using a fourth-order CWENO discretisation in space and third-order TVD Runge-Kutta discretisation in time. The numerical solutions obtained through the relaxation system have the same order of accuracy in space and time and they closely match with the filtered DNS solutions.

Electrical Contact Resistance in Thin (<= 0.5 mu m) Gold Plated Contacts: Effect of Gold Plating Thickness

This paper describes the electrical contact resistance (ECR) measurements made on thin gold plated (gold plating of <= 0.5 mu m with a Ni underlayer of similar to 2 mu m) oxygen free high conductivity (OFHC) Cu contacts in vacuum environment. ECR in gold plated OFHC Cu contacts is found to be slightly higher than that in bare OFHC Cu contacts. Even though gold is a softer material than copper, the relatively high ECR values observed in gold plated contacts are mainly due to the higher hardness and electrical resistivity of the underlying Ni layer. It is well known that ECR is directly related to plating factor, which increases with increasing coating thickness when the electrical resistivity of coating material is more than that of substrate. Surprisingly, in the present case it is found that the ECR decreases with increasing gold layer thickness on OFHC Cu substrate (gold has higher electrical resistivity than OFHC Cu). It is analytically demonstrated from the topography and microhardness measurements results that this peculiar behavior is associated with thin gold platings, where the changes in surface roughness and microhardness with increasing layer thickness overshadow the effect of plating factor on ECR.

Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 - 2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 - 2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434-3.442 eV. The film grown at 800 degrees C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission. (C) 2010 Elsevier B.V. All rights reserved.

A classification of homogeneous operators in the Cowen-Douglas class

An explicit construction of all the homogeneous holomorphic Hermitian vector bundles over the unit disc D is given. It is shown that every such vector bundle is a direct sum of irreducible ones. Among these irreducible homogeneous holomorphic Hermitian vector bundles over D, the ones corresponding to operators in the Cowen-Douglas class B-n(D) are identified. The classification of homogeneous operators in B-n(D) is completed using an explicit realization of these operators. We also show how the homogeneous operators in B-n(D) split into similarity classes. (C) 2011 Elsevier Inc. All rights reserved.

Matrix method for eigenstructure assignment - The multi-input case with application

The eigenvalue and eigenstructure assignment procedure has found application in a wide variety of control problems. In this paper a method for assigning eigenstructure to a linear time invariant multi-input system is proposed. The algorithm determines a matrix that has eigenvalues and eigenvectors at the desired locations. It is obtained from the knowledge of the open-loop system and the desired eigenstructure. Solution of the matrix equation, involving unknown controller gams, open-loop system matrices, and desired eigenvalues and eigenvectors, results hi the state feedback controller. The proposed algorithm requires the closed-loop eigenvalues to be different from those of the open-loop case. This apparent constraint can easily be overcome by a negligible shift in the values. Application of the procedure is illustrated through the offset control of a satellite supported, from an orbiting platform, by a flexible tether.

Matrix method for eigenstructure assignment - The multi-input case with application

The eigenvalue and eigenstructure assignment procedure has found application in a wide variety of control problems. In this paper a method for assigning eigenstructure to a Linear time invariant multi-input system is proposed. The algorithm determines a matrix that has eigenvalues and eigenvectors at the desired locations. It is obtained from the knowledge of the open-loop system and the desired eigenstructure. solution of the matrix equation, involving unknown controller gains, open-loop system matrices, and desired eigenvalues and eigenvectors, results in the state feedback controller. The proposed algorithm requires the closed-loop eigenvalues to be different from those of the open-loop case. This apparent constraint can easily be overcome by a negligible shift in the values. Application of the procedure is illustrated through the offset control of a satellite supported, from an orbiting platform, by a flexible tether,

Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.

B Physics: WHEPP-XI working group report

We present the report of the B physics working group of the Workshop on High Energy Physics Phenomenology (WHEPP-XI), held at the Physical Research Laboratory, Ahmedabad, in January 2010.

Tailoring the microstructure and mechanical properties of arrays of aligned multiwall carbon nanotubes by utilizing different hydrogen concentrations during synthesis

We synthesize vertically aligned arrays of carbon nanotubes (CNTs) in a chemical vapor deposition system with floating catalyst, using different concentrations of hydrogen in the gas feedstock. We report the effect of different hydrogen concentrations on the microstructure and mechanical properties of the resulting material. We show that a lower hydrogen concentration during synthesis results in the growth of stiffer CNT arrays with higher average bulk density. A lower hydrogen concentration also leads to the synthesis of CNT arrays that can reach higher peak stress at maximum compressive strain, and dissipate a larger amount of energy during compression. The individual CNTs in the arrays synthesized with a lower hydrogen concentration have, on average, larger outer diameters (associated with the growth of CNTs with a larger number of walls), but present a less uniform diameter distribution. The overall heights of the arrays and their strain recovery after compression have been found to be independent of the hydrogen concentration during growth. (C) 2011 Elsevier Ltd. All rights reserved.