Nitretação em plasma com gaiola catódica: investigação do mecanismo e estudo comparativo com a nitretação em plasma de tensão contínua

The ionic plasma nitriding is one of the most important plasma assisted treatment technique for surface modification, but it presents some inherent problems mainly in nitriding pieces with complex geometries. In the last four years has appeared a plasma nitriding technique, named ASPN (Active Screen Plasma Nitriding) in which the samples and the workload are surrounded by a metal screen on which the cathodic potential is applied. This new technique makes possible to obtain a perfect uniform nitrided layer apart from the shape of the samples. The present work is based on the development of a new nitriding plasma technique named CCPN (Cathodic Cage Plasma Nitriding) Patent PI 0603213-3 derived from ASPN, but utilizes the hollow cathode effect to increase the nitriding process efficiency. That technique has shown great improvement on the treatment of several types of steels under different process conditions, producing thicker and harder layers when compared with both, ASPN and ionic plasma nitriding, besides eliminating problems associated with the later technique. The best obtained results are due to the hollow cathode effect on the cage holes. Moreover, characteristic problems of ionic plasma nitriding are eliminated due to the fact that the luminescent discharge acts on the cage wall instead of on the samples surface, which remains under a floating potential. In this work the enhancement of the cathodic cage nitriding layers proprieties, under several conditions for some types of steels was investigated, besides the mechanism for nitrides deposition on glass substrate, concluding that the CCPN is both a diffusion and a deposition process at the same time

Nitretação iônica sem efeito de borda :desenvolvimento e avaliação de uma nova técnica

The ionic nitriding process presents some limitations related with the control of the thickness of the layer and its uniformity. Those limitations that happen during the process, are produced due to edge effects, damage caused by arcing arc and hollow cathode, mainly in pieces with complex geometry and under pressures in excess of 1 mbar. A new technique, denominated ASPN (active screen shapes nitriding) it has been used as alternative, for offering many advantages with respect to dc plasma conventional. The developed system presents a configuration in that the samples treated are surrounded by a large metal screen at high voltage cathodic potencials, (varying between 0 and 1200V) and currents up to 1 A. The sample is placed in floting potential or polarized at relatively lower bias voltages by an auxiliary source. As the plasma is not formed directly in the sample surface but in the metal screen, the mentioned effects are eliminated. This mechanism allows investigate ion of the transfer of nitrogen to the substrate. Optical and electronic microscopy are used to exam morphology and structure at the layer. X-ray difration for phase identification and microhardness to evaluate the efficiency of this process with respect to dc conventional nitriding

Diagnóstico de plasma de cátodo oco: análise da ação de plasma de argônio e Ar-H2 para a deposição de filmes finos de titânio em pós-descarga

Plasma DC hollow cathode has been used for film deposition by sputtering with release of neutral atoms from the cathode. The DC Plasma Ar-H2 hollow cathode currently used in the industry has proven to be effective in cleaning surfaces and thin film deposition when compared to argon plasma. When we wish to avoid the effects of ion bombardment on the substrate discharge, it uses the post-discharge region. Were generated by discharge plasma of argon and hydrogen hollow cathode deposition of thin films of titanium on glass substrate. The optical emission spectroscopy was used for the post-discharge diagnosis. The films formed were analyzed by mechanical profilometry technique. It was observed that in the spectrum of the excitation lines of argon occurred species. There are variations in the rate of deposition of titanium on the glass substrate for different process parameters such as deposition time, distance and discharge working gases. It was noted an increase in intensity of the lines of argon compared with the lines of titanium. Deposition with argon and hydrogen in glass sample observed a higher rate deposition of titanium as more closer the sample was in the discharge

Desenvolvimento de um sistema a jato de plasma obtido em cátodo oco para deposição de filmes finos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Desenvolvimento e caracterização de dispositivos para reposição de filmes finos por descarga em cátodo oco

In the present work we use a plasma jet system with a hollow cathode to deposit thin TiO2 films on silicon substrates as alternative at sol-gel, PECVD, dip-coating e magnetron sputtering techniques. The cylindrical cathode, made from pure titanium, can be negatively polarized between 0 e 1200 V and supports an electrical current of up to 1 A. An Ar/O2 mixture, with a total flux of 20 sccm and an O2 percentage ranging between 0 and 30%, is passed through a cylindrical hole machined in the cathode. The plasma parameters and your influence on the properties of deposited TiO2 films and their deposition rate was studied. When discharge occurs, titanium atoms are sputtered/evaporated. They are transported by the jet and deposited on the Si substrates located on the substrate holder facing the plasma jet system at a distance ranging between10 and 50 mm from the cathode. The working pressure was 10-3 mbar and the deposition time was 10 -60 min. Deposited films were characterized by scanning electron microscopy and atomic force microscopy to check the film uniformity and morphology and by X-ray diffraction to analyze qualitatively the phases present. Also it is presented the new dispositive denominate ionizing cage, derived from the active screen plasma nitriding (ASPN), but based in hollow cathode effect, recently developed. In this process, the sample was involved in a cage, in which the cathodic potential was applied. The samples were placed on an insulator substrate holder, remaining in a floating potential, and then it was treated in reactive plasma in hollow cathode regime. Moreover, the edge effect was completely eliminated, since the plasma was formed on the cage and not directly onto the samples and uniformity layer was getting in all sampl

Pulverização em CDA 250 herbicida pendimethalin na cultura do arroz de sequeiro

Foi estudada a viabilidade de utilização da pulverização CDA 25C, na aplicação do herbicida em pré-emergência na cultura do arroz de sequeiro. O herbicida empregado foi o pendimethalin nas doses de 0,0; 1,5; 2,0; 2,5 e 3,0 litro s/ha da formulação comercial a 50%. A pulverização convencional foi efetuada com bicos 11003 com consumo de 200 litros de calda per hectare. O processo CDA 250 foi aplicado por meio de bico rotativo (Micromax) com dois níveis de consumo de calda : 50 1/ha e 27 1/ha. Os resultados mostraram que: a) - o método CDA 250 proporciona controle dc mato e produtividade de arroz equivalentes ao método convencional; b) para o bico Micromax, a aplicação da formulação comercial de pendimethalin a 50% com vazão de 0,48 1/min./bico, a distância entre bicos deve ser de 1,75 m e para a vazão de 0,96 1/min./bloco, essa distancia deve ser de 1,90 m; c)- a aplicação do pendimethalin 50% C.E. pelo processo CDA 250, empregando 27 litros de calda por hectare foi o processo mais interessante por oferecer vantagens logísticas apreciáveis.

Pulverização eletrostática e assistência de ar no tratamento fitossanitário na cultura do algodoeiro

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Avaliação da bioatividade de revestimentos produzidos sobre Tântalo por oxidação eletrolítica assistida por plasma

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Avaliação da bioatividade de revestimentos produzidos sobre Tântalo por oxidação eletrolítica assistida por plasma

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Nitretação em plasma com gaiola catódica: investigação do mecanismo e estudo comparativo com a nitretação em plasma de tensão contínua

The ionic plasma nitriding is one of the most important plasma assisted treatment technique for surface modification, but it presents some inherent problems mainly in nitriding pieces with complex geometries. In the last four years has appeared a plasma nitriding technique, named ASPN (Active Screen Plasma Nitriding) in which the samples and the workload are surrounded by a metal screen on which the cathodic potential is applied. This new technique makes possible to obtain a perfect uniform nitrided layer apart from the shape of the samples. The present work is based on the development of a new nitriding plasma technique named CCPN (Cathodic Cage Plasma Nitriding) Patent PI 0603213-3 derived from ASPN, but utilizes the hollow cathode effect to increase the nitriding process efficiency. That technique has shown great improvement on the treatment of several types of steels under different process conditions, producing thicker and harder layers when compared with both, ASPN and ionic plasma nitriding, besides eliminating problems associated with the later technique. The best obtained results are due to the hollow cathode effect on the cage holes. Moreover, characteristic problems of ionic plasma nitriding are eliminated due to the fact that the luminescent discharge acts on the cage wall instead of on the samples surface, which remains under a floating potential. In this work the enhancement of the cathodic cage nitriding layers proprieties, under several conditions for some types of steels was investigated, besides the mechanism for nitrides deposition on glass substrate, concluding that the CCPN is both a diffusion and a deposition process at the same time

Nitretação iônica sem efeito de borda :desenvolvimento e avaliação de uma nova técnica

The ionic nitriding process presents some limitations related with the control of the thickness of the layer and its uniformity. Those limitations that happen during the process, are produced due to edge effects, damage caused by arcing arc and hollow cathode, mainly in pieces with complex geometry and under pressures in excess of 1 mbar. A new technique, denominated ASPN (active screen shapes nitriding) it has been used as alternative, for offering many advantages with respect to dc plasma conventional. The developed system presents a configuration in that the samples treated are surrounded by a large metal screen at high voltage cathodic potencials, (varying between 0 and 1200V) and currents up to 1 A. The sample is placed in floting potential or polarized at relatively lower bias voltages by an auxiliary source. As the plasma is not formed directly in the sample surface but in the metal screen, the mentioned effects are eliminated. This mechanism allows investigate ion of the transfer of nitrogen to the substrate. Optical and electronic microscopy are used to exam morphology and structure at the layer. X-ray difration for phase identification and microhardness to evaluate the efficiency of this process with respect to dc conventional nitriding

Proposta metodológica utilizando ferramentas de qualidade na avaliação do processo de pulverização

The present work aimed to create a methodology to evaluate the pulverization process with the use of quality tools. It was listed the primary factors, secondary factors, tertiary factors and, with the check list tool support, the list was elaborated. It was evaluated the factors labor, agriculture machine, material and method of 32 pulverization process before pesticide application, in that each factor received a punctuation, having as total sum of 750 points. The medium punctuation to the factors labor, agriculture machine, material and method was 78; 211; 49; 20 and 94 points, respectively. The sum of the factors points for the 32 processes, the minimum value found was 230 and maximum was 620 points. With the proposed methodology, can be identify which common causes of the processes can affect its result.

Número cromossômico em espécies brasileiras de Adesmia DC. (Leguminosae-Faboideae)

Chromosome numbers of 11 South-Brazilian species of Adesmia were determined. The cytological preparations were obtained by squashing cells of root tips, using the acetic-orcein method. The chromosome number for all the species studied was 2n=20, excepting A. incana var. incana with 2n=ca.40. The counts are new for nine species, and the other two agree with the literature. It is suggested x=10 as the basic number for the genus. Up to the present only four species were cited as polyploid.

Avaliação cefalométrica da estabilidade pós-expansão rápida da maxila assistida cirurgicamente

OBJETIVO: avaliar as possíveis alterações e a estabilidade dentária e esquelética no sentido transversal, bem como as possíveis alterações verticais da face (AFAI), produzidas pela Expansão Rápida da Maxila Assistida Cirurgicamente (ERMAC). MÉTODOS: a amostra selecionada para este estudo retrospectivo foi composta por 60 telerradiografias em norma frontal, de 15 pacientes, sendo 6 do gênero masculino e 9 do gênero feminino, com média de idades de 23 anos e 3 meses. O disjuntor Hyrax foi instalado e o procedimento cirúrgico adotado envolveu a separação da sutura palatina mediana e não-abordagem da sutura pterigomaxilar. A ativação foi realizada do terceiro dias após a cirurgia até o término da expansão, determinada por critérios clínicos. Todos os pacientes foram radiografados nas fases pré-expansão (T1); pós-expansão imediata (T2); 3 meses pós-expansão, com o próprio disjuntor como contenção (T3); e 6 meses pós-expansão, com a placa removível de acrílico como contenção (T4). Medidas lineares foram obtidas a partir dos traçados cefalométricos gerados por um programa computadorizado (Radiocef Studio 2) e analisadas estatisticamente pelos testes de variância (ANOVA) e Tukey ao nível de 5% de significância. RESULTADOS E CONCLUSÕES: concluiu-se que a ERMAC produziu aumentos estatisticamente significativos da cavidade nasal, da largura maxilar e da distância intermolares superiores, de T1 para T2, os quais se mantiveram em T3 e T4. A largura facial e as distâncias intermolares inferiores não apresentaram alterações após a ERMAC. Avaliando o comportamento vertical da face, notou-se um aumento da AFAI nas fases T1 para T2, que diminuiu após a contenção de 3 meses (T3) e permaneceu estável em T4, embora aumentada se comparada com T1.

Anatomia foliar de Eugenia florida DC. (Myrtaceae)

Foi feito o estudo anatômico da folha de Eugenia florida DC., espécie arbórea da família Myrtaceae, coletada no Campus da Fundação Oswaldo Cruz, Rio de Janeiro, RJ. A espécie apresenta importantes propriedades farmacológicas, incluindo-se atividade antiviral. O presente estudo teve como objetivo fornecer dados, revelados através da microscopia óptica e da microscopia eletrônica de varredura, que possam contribuir para o conhecimento da espécie e, conseqüentemente, para a segurança em sua identificação. Anatomicamente, a folha é hipostomática, com organização dorsiventral do mesofilo. Apresenta tricomas simples apenas sobre a nervura mediana da face adaxial. As células epidérmicas apresentam contorno sinuoso em vista frontal e cutícula estriada. O parênquima paliçádico destaca-se pela grande quantidade de cristais prismáticos de oxalato de cálcio. Em posição subepidérmica ocorrem cavidades secretoras de óleos essenciais, pouco numerosas, nas duas faces da lâmina foliar. As células epidérmicas situadas sobre as estruturas secretoras constituem característica de valor diagnóstico e são reconhecíveis pela célula de topo, que é reniforme, circundada pelas adjacentes, que apresentam disposição radiada. A comparação entre folhas de sol e de sombra revela que, nas primeiras, as estruturas secretoras são completamente diferenciadas, ao contrário das folhas de sombra, além de apresentarem maior concentração de compostos ergásticos.