Differential power analysis resistance of Camellia and countermeasure strategy on FPGAs

Security devices are vulnerable to Differential Power Analysis (DPA) that reveals the key by monitoring the power consumption of the circuits. In this paper, we present the first DPA attack against an FPGA implementation of the Camellia encryption algorithm with all key sizes and evaluate the DPA resistance of the algorithm. The Camellia cryptographic algorithm involves several different key-dependent intermediate operations including S-Box operations. In previous research, it was believed that the Camellia is stronger than AES due to the additional Whitening phase protecting the S-Box operation. However, we propose an attack that bypasses the Whitening phase and targets the S-Box. In this paper, we also discuss a lowcost countermeasure strategy to protect the Pre-whitening / Post-whitening and FL function of Camellia using Dual-rail Precharged Logic and to protect against attacks of the S-Box using Random Delay Insertion. © 2009 IEEE.

A 76-84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer

This paper presents holistic design of a novel four-way differential power-combining transformer for use in millimeter-wave power-amplifier (PA). The combiner with an inner radius of 25 µm exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. It is designed to simultaneously act as a balanced-to-unbalanced converter, removing the need for additional BALUNs typically required in differential circuits. A complete circuit comprised of a power splitter, two-stage differential cascode PA array, a power combiner as well as input and output matching elements was designed and realized in SiGe technology with f/f 170/250 GHz. Measured small-signal gain of at least 16.8 dB was obtained from 76.4 to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm output referred 1 dB compression point and 14 dBm saturated output power when operated from a 3.2 V dc supply voltage at 78 GHz.

Coordinated Design of Phase Measurement Unit and Power System Stabilisers in Large Scale Power System

This paper presents a case-study of a PMU application with PSS support in a real large scale Chinese power system to suppress inter-area oscillations. The paper uses PMU measured feedback signals from a PSS input signal for dynamic torque analysis (DTA). In the paper, a mathematical model of multi-machine power system is described, followed by formation of the residue and DTA indices. Simulations of the model are used with a large-scale power system model to demonstrate the role of PSS and the equivalence of DTA residue indices.

E-Band Transformer-Based Differential 4-Way Power-Combining Amplifier

This paper presents the design and implementation of a differential 4-way power-combining amplifier operating at E-band. The proposed 4-way power combiner (4WPC) facilitates short interconnects to the PA cells, thereby resulting in reduced loss. Simple C-L-C and L-C networks are deployed in order to compensate inductive loading due to the routing lines that would otherwise introduce mismatch and subsequently increase overall loss. Realized in SiGe technology, the PA prototype delivered 13.2 dBm output-referred 1-dB compression point and 14.3 dBm saturated output power when operated from a single 3.3 V DC supply at 75 GHz.

Multi-Level Wordline Driver for Low Power SRAMs in Nano-Scale CMOS Technology

In this paper, a multi-level wordline driver scheme is presented to improve SRAM read and write stability while lowering power consumption during hold operation. The proposed circuit applies a shaped wordline voltage pulse during read mode and a boosted wordline pulse during write mode. During read, the applied shaped pulse is tuned at nominal voltage for short period of time, whereas for the remaining access time, the wordline voltage is reduced to a lower level. This pulse results in improved read noise margin without any degradation in access time which is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during hold mode, the wordline voltage starts from a negative value and reaches zero voltage, resulting in a lower leakage current compared to conventional SRAM. Our simulations using TSMC 65nm process show that the proposed wordline driver results in 2X improvement in static read noise margin while the write margin is improved by 3X. In addition, the total leakage of the proposed SRAM is reduced by 10% while the total power is improved by 12% in the worst case scenario of a single SRAM cell. The total area penalty is 10% for a 128Kb standard SRAM array.