Non-intrusive pressure measurement in microchannels

A non-intrusive interferometric measurement technique has been successfully developed to measure fluid compressibility in both gas and liquid phases via refractive index (RI) changes. The technique, consisting of an unfocused laser beam impinging a glass channel, can be used to separate and quantify cell deflection, fluid flow rates, and pressure variations in microchannels. Currently in fields such as microfluidics, pressure and flow rate measurement devices are orders of magnitude larger than the channel cross-sections making direct pressure and fluid flow rate measurements impossible. Due to the non-intrusive nature of this technique, such measurements are now possible, opening the door for a myriad of new scientific research and experimentation. This technique, adapted from the concept of Micro Interferometric Backscatter Detection (MIBD), boasts the ability to provide comparable sensitivities in a variety of channel types and provides quantification capability not previously demonstrated in backscatter detection techniques. Measurement sensitivity depends heavily on experimental parameters such as beam impingement angle, fluid volume, photodetector sensitivity, and a channel’s dimensional tolerances. The current apparatus readily quantifies fluid RI changes of 10-5 refractive index units (RIU) corresponding to pressures of approximately 14 psi and 1 psi in water and air, respectively. MIBD reports detection capability as low as 10-9 RIU and the newly adapted technique has the potential to meet and exceed this limit providing quantification in the place of detection. Specific device sensitivities are discussed and suggestions are provided on how the technique may be refined to provide optimal quantification capabilities based on experimental conditions.

Design, Calibration, and Evaluation of Depth-of-Interaction-Capable PET Detector Modules

High-resolution, small-bore PET systems suffer from a tradeoff between system sensitivity, and image quality degradation. In these systems long crystals allow mispositioning of the line of response due to parallax error and this mispositioning causes resolution blurring, but long crystals are necessary for high system sensitivity. One means to allow long crystals without introducing parallax errors is to determine the depth of interaction (DOI) of the gamma ray interaction within the detector module. While DOI has been investigated previously, newly available solid state photomultipliers (SSPMs) well-suited to PET applications and allow new modules for investigation. Depth of interaction in full modules is a relatively new field, and so even if high performance DOI capable modules were available, the appropriate means to characterize and calibrate the modules are not. This work presents an investigation of DOI capable arrays and techniques for characterizing and calibrating those modules. The methods introduced here accurately and reliably characterize and calibrate energy, timing, and event interaction positioning. Additionally presented is a characterization of the spatial resolution of DOI capable modules and a measurement of DOI effects for different angles between detector modules. These arrays have been built into a prototype PET system that delivers better than 2.0 mm resolution with a single-sided-stopping-power in excess of 95% for 511 keV g's. The noise properties of SSPMs scale with the active area of the detector face, and so the best signal-to-noise ratio is possible with parallel readout of each SSPM photodetector pixel rather than multiplexing signals together. This work additionally investigates several algorithms for improving timing performance using timing information from multiple SSPM pixels when light is distributed among several photodetectors.

Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

A portable NIR device for the optical supervision of milk coagulation process

The coagulation of milk is the fundamental process in cheese-making, based on a gel formation as consequence of physicochemical changes taking place in the casein micelles, the monitoring the whole process of milk curd formation is a constant preoccupation for dairy researchers and cheese companies (Lagaude et al., 2004). In addition to advances in composition-based applications of near infrared spectroscopy (NIRS), innovative uses of this technology are pursuing dynamic applications that show promise, especially in regard to tracking a sample in situ during food processing (Bock and Connelly, 2008). In this way the literature describes cheese making process applications of NIRS for curd cutting time determination, which conclude that NIRS would be a suitable method of monitoring milk coagulation, as shown i.e. the works published by Fagan et al. (Fagan et al., 2008; Fagan et al., 2007), based in the use of the commercial CoAguLite probe (with a LED at 880nm and a photodetector for light reflectance detection).

Experimental measurements of the scattered-light polarization from different liquid flows

An experimental system designed to measure very low optical powers, of the order of a few picowatts, is presented. Its main aid is to detect the polarisation state of scattered light from a fluid flow, in different angular directions with respect to the longitudinal axis of the flow. A laser beam incident linearly polarized crosses the fluid flow orthogonally. The scattered light is detected by means of a photodetector situated behind a lineal polarizer whose orientation can be rotated. The outgoing electrical signal is amplified by means of a Mode-lockin amplifier and is digitally processed.

High-frequency signal generation using 1550 nm VCSEL subject to two-frequency optical injection

We experimentally investigate high-frequency microwave signal generation using a 1550 nm single-mode VCSEL subject to two-frequency optical injection. We first consider a situation in which the injected signals come from two similar VCSELs. The polarization of the injected light is parallel to that of the injected VCSEL. We obtain that the VCSEL can be locked to one of the injected signals, but the observed microwave signal is originated by beating at the photodetector. In a second situation we consider injected signals that come from two external cavity tunable lasers with a significant increase of the injected power with respect to the VCSEL-by-VCSEL injection case. The polarization of the injected light is orthogonal to that of the free-running slave VCSEL. We show that in this case it is possible to generate a microwave signal inside the VCSEL cavity. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.

Quadrature-phase noise penalties of optically and electro-optically phase-locked lasers

Focussing particularly on solid-state laser systems, the phase-noise penalties of laser injection-locking and electro-optical phase-locking are derived using linearised quantum mechanical models. The fundamental performance limit (minimum achievable output phase noise) for an injection-locked laser (IJL) system at low frequencies is equal to that of a standard phase-insensitive amplifier, whereas, in principle, that of a phase-locked laser (PLL) system can be better. At high frequencies, the output phase noise of the IJL system is limited by that of the master laser, while that of the PLL system tends to a weighted sum of contributions from the master and slave laser fields. Under conditions of large amplification, particularly where there has been significant attenuation, the noise penalties are shown to be substantial. Nonideal photodetector characteristics are shown to add significantly to the noise penalties for the PLL system. (C) 2005 Elsevier B.V. All rights reserved.

Practical limitations in optical entanglement purification

Entanglement purification protocols play an important role in the distribution of entangled systems, which is necessary for various quantum information processing applications. We consider the effects of photodetector efficiency and bandwidth, channel loss and mode mismatch on the operation of an optical entanglement purification protocol. We derive necessary detector and mode-matching requirements to facilitate practical operation of such a scheme, without having to resort to destructive coincidence-type demonstrations.

Application of digital image processing techniques to the photometric testing of vehicle headlamps

The aim of this Interdisciplinary Higher Degrees project was the development of a high-speed method of photometrically testing vehicle headlamps, based on the use of image processing techniques, for Lucas Electrical Limited. Photometric testing involves measuring the illuminance produced by a lamp at certain points in its beam distribution. Headlamp performance is best represented by an iso-lux diagram, showing illuminance contours, produced from a two-dimensional array of data. Conventionally, the tens of thousands of measurements required are made using a single stationary photodetector and a two-dimensional mechanical scanning system which enables a lamp's horizontal and vertical orientation relative to the photodetector to be changed. Even using motorised scanning and computerised data-logging, the data acquisition time for a typical iso-lux test is about twenty minutes. A detailed study was made of the concept of using a video camera and a digital image processing system to scan and measure a lamp's beam without the need for the time-consuming mechanical movement. Although the concept was shown to be theoretically feasible, and a prototype system designed, it could not be implemented because of the technical limitations of commercially-available equipment. An alternative high-speed approach was developed, however, and a second prototype syqtem designed. The proposed arrangement again uses an image processing system, but in conjunction with a one-dimensional array of photodetectors and a one-dimensional mechanical scanning system in place of a video camera. This system can be implemented using commercially-available equipment and, although not entirely eliminating the need for mechanical movement, greatly reduces the amount required, resulting in a predicted data acquisiton time of about twenty seconds for a typical iso-lux test. As a consequence of the work undertaken, the company initiated an 80,000 programme to implement the system proposed by the author.

Fiber laser incorporating an intracavity micro-channel for refractive index and temperature sensing

In this letter, we present a standard linear cavity fiber laser incorporating a microchannel for refractive index (RI) and temperature sensing. The microchannel of ~6µm width created by femtosecond laser aided chemical etching provides an access to the external liquid; therefore, the laser cavity loss changes with the liquids of different RIs. Thus, at a fixed pump power, the output laser power will vary with the change of RI in the microchannel. The results show that the proposed sensing system has a linear response to both the surrounding medium RI and temperature. The RI sensitivity of the laser system is on the order of 10-3, while the temperature sensitivity is about 0.02 C. Both sensitivities could be further enhanced by employing a more sensitive photodetector and using higher pump power.

Fibre laser using a microchannel based loss tuning element for refractive index sensing

We have proposed and demonstrated a fibre laser system using a microchannel as a cavity loss tuning element for surrounding medium refractive index (SRI) sensing. A ~6µm width microchannel was created by femtosecond (fs) laser inscription assisted chemical etching in the cavity fibre, which offers a direct access to the external liquids. When the SRI changes, the microchannel behaves as a loss tuning element, hence modulating the laser cavity loss and output power. The results indicate that the presented laser sensing system has a linear response to the SRI with a sensitivity in the order of 10-5. Using higher pump power and more sensitive photodetector, the SRI sensitivity could be further enhanced.

Ultra small integrated optical fiber sensing system

This paper introduces a revolutionary way to interrogate optical fiber sensors based on fiber Bragg gratings (FBGs) and to integrate the necessary driving optoelectronic components with the sensor elements. Low-cost optoelectronic chips are used to interrogate the optical fibers, creating a portable dynamic sensing system as an alternative for the traditionally bulky and expensive fiber sensor interrogation units. The possibility to embed these laser and detector chips is demonstrated resulting in an ultra thin flexible optoelectronic package of only 40 µm, provided with an integrated planar fiber pigtail. The result is a fully embedded flexible sensing system with a thickness of only 1 mm, based on a single Vertical-Cavity Surface-Emitting Laser (VCSEL), fiber sensor and photodetector chip. Temperature, strain and electrodynamic shaking tests have been performed on our system, not limited to static read-out measurements but dynamically reconstructing full spectral information datasets.

A compact, portable and low cost generic interrogation strain sensor system using an embedded VCSEL, detector and fibre Bragg grating

We present a compact, portable and low cost generic interrogation strain sensor system using a fibre Bragg grating configured in transmission mode with a vertical-cavity surface-emitting laser (VCSEL) light source and a GaAs photodetector embedded in a polymer skin. The photocurrent value is read and stored by a microcontroller. In addition, the photocurrent data is sent via Bluetooth to a computer or tablet device that can present the live data in a real time graph. With a matched grating and VCSEL, the system is able to automatically scan and lock the VCSEL to the most sensitive edge of the grating. Commercially available VCSEL and photodetector chips are thinned down to 20 µm and integrated in an ultra-thin flexible optical foil using several thin film deposition steps. A dedicated micro mirror plug is fabricated to couple the driving optoelectronics to the fibre sensors. The resulting optoelectronic package can be embedded in a thin, planar sensing sheet and the host material for this sheet is a flexible and stretchable polymer. The result is a fully embedded fibre sensing system - a photonic skin. Further investigations are currently being carried out to determine the stability and robustness of the embedded optoelectronic components. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Ultra small integrated optical fiber sensing system

This paper introduces a revolutionary way to interrogate optical fiber sensors based on fiber Bragg gratings (FBGs) and to integrate the necessary driving optoelectronic components with the sensor elements. Low-cost optoelectronic chips are used to interrogate the optical fibers, creating a portable dynamic sensing system as an alternative for the traditionally bulky and expensive fiber sensor interrogation units. The possibility to embed these laser and detector chips is demonstrated resulting in an ultra thin flexible optoelectronic package of only 40 µm, provided with an integrated planar fiber pigtail. The result is a fully embedded flexible sensing system with a thickness of only 1 mm, based on a single Vertical-Cavity Surface-Emitting Laser (VCSEL), fiber sensor and photodetector chip. Temperature, strain and electrodynamic shaking tests have been performed on our system, not limited to static read-out measurements but dynamically reconstructing full spectral information datasets.