979 resultados para Oxygen plasma etching
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This work reports the influence of the poly (ethylene terephthalate) textile and films surface modification by plasmas of O2 and mixtures (N2 + O2), on their physical and chemical properties. The plasma surface polymeric modification has been used for many researchs, because it does not affect the environment with toxic agents, the alterations remains only at nanometric layers and this technique shows expressive results. Then, due to its good acceptance, the treatment was carried out in a vacuum chamber. Some parameters remained constant during all treatment, such as: Voltage 470 V; Pressure 1,250 Mbar; Current: 0, 10 A and gas flow: 10 cm3/min, using oxygen plasma alternating the treatment time 10 to 60 min with an increase of 10 min to each subsequent treatment. Also, the samples were treated with a gas mixture (nitrogen + oxygen) which was varied only the gas composition from 0 to 100% leaving the treatment time remaining constant to all treatment (10 min). The plasma treatment was characterized in-situ with Optics Emission Spectroscopy (OES), and the samples was characterized by contact angle, surface tension, Through Capillary tests, Raman spectroscopy, Infrared attenuated total reflection (IR-ATR) and atomic force microscopy, scanning electronic Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). The results showed that oxygen treated fabrics presented high wettability, due to the hydrophilic groups incorporation onto the surface formed through spputering of carbon atoms. For the nitrogen atmosphere, there is the a film deposition of amine groups. Treatment with small oxygen concentration in the mixture with nitrogen has a higher spputered species of the samples
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A polyester film has a vast application field, due some properties that are inherent of this kind of material such as, good mechanical resistance, chemical resistance to acids and bases and low production cost. However, this material has some limitations as low superficial tension, flat surface, low affinity to dyers, and poor adhesion which impede the use of the same ones for some finality as good wettability. Among the existent techniques to increase the superficial tension, plasma as energy source is the more promising technique, because of their versatility and for not polluting the environment. The plasma surface polymeric modification has been used for many researchers, because it does not affect the environment with toxic agents, the alterations remains only at nanometric layers and this technique shows expressive results. Then, due to its good acceptance, polyester films were treated with oxygen plasma varying the treatment time from 10 to 60 min with an increase of 10 min to each subsequent treatment. Also, the samples were treated with a gas mixture (nitrogen + oxygen) varying the percentage of each gas the mixture from 0 to 100%, the treatment time remaining constant to all treatments (10 min). After plasma treatment the samples were characterized by contact angle, surface tension, Raman spectroscopy, Infrared attenuated total reflection (IR-ATR) and atomic force microscopy, with the aim to study the wettability increase of treated polyester films as its variables. In the (O2/N2) plasma treatment of polyester films can be observed an increase of superficial roughness superior to those treated by O2 plasma. By the other hand, the chemical modification through the implantation of polar groups at the surface is obtained more easily using O2 plasma treatment
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We analyzed GFP cells after 24h cultivated on superhydrophilic vertically aligned carbon nanotube scaffolds. We produced two different densities of VACNT scaffolds on Ti using Ni or Fe catalysts. A simple and fast oxygen plasma treatment promoted the superhydrophilicity of them. We used five different substrates, such as: as-grown VACNT produced using Ni as catalyst (Ni), as-grown VACNT produced using Fe as catalyst (Fe), VACNT-O produced using Ni as catalyst (NiO), VACNT-O produced using Fe as catalyst (FeO) and Ti (control). The 4',6-diamidino-2-phenylindole reagent nuclei stained the adherent cells cultivated on five different analyzed scaffolds. We used fluorescence microscopy for image collect, ImageJ® to count adhered cell and GraphPad Prism 5® for statistical analysis. We demonstrated in crescent order: Fe, Ni, NiO, FeO and Ti scaffolds that had an improved cellular adhesion. Oxygen treatment associated to high VACNT density (group FeO) presented significantly superior cell adhesion up to 24h. However, they do not show significant differences compared with Ti substrates (control). We demonstrated that all the analyzed substrates were nontoxic. Also, we proposed that the density and hydrophilicity influenced the cell adhesion behavior.
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In this work, we have studied the influence of the substrate surface condition on the roughness and the structure of the nanostructured DLC films deposited by high-density plasma chemical vapor deposition Four methods were used to modify the silicon wafers surface before starting the deposition processes of the nanostructured DLC films. micro-diamond powder dispersion, micro-graphite powder dispersion, and roughness generation by wet chemical etching and roughness generation by plasma etching. The reference wafer was only submitted to a chemical cleaning. It was possible to see that the final roughness and the sp(3) hybridization degree (that is related with the structure and chemical composition) strongly depend on the substrate surface conditions The surface roughness was observed by AFM and SEM and the hybridization degree of the DLC films was analyzed by Raman Spectroscopy Thus, the effects of the substrate surface on the DLC film structure were confirmed. These phenomena can be explained by the fact that the locally higher surface energy and the sharp edges may induce local defects promoting the nanostructured characteristics in the DLC films. (C) 2009 Elsevier B.V. All rights reserved.
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This work presents for the first time to our knowledge the fabrication and characterization of rib waveguides produced with PbO-GeO(2) (PGO) thin films. The target was manufactured using pure oxides ( 60 PbO-40 GeO(2), in wt%) and amorphous thin films were produced with the RF sputtering technique. PGO thin films present small absorption in the visible and in the near infrared and refractive index of similar to 2.0. The definition of the rib waveguide structure was made using conventional optical lithography followed by plasma etching, performed in a Reactive Ion Etching (RIE) reactor. Light propagation mode in the waveguide structure was analyzed using integrated optic simulation software. Optical loss measurements were performed to determine the propagation loss at 633 nm, for ribs with height of 70 nm and width of 3-5 mu m; experimental values around 2 dB/cm were found for the propagation loss and confirmed the theoretical calculations. The results obtained demonstrate that PGO thin films are potential candidates for application in integrated optics. Published by Elsevier B.V.
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The plasma etching of semiconductor surfaces with fluorine-containing compounds has technological interest. Presently, considerable effort is being devoted to understand the chemistry involved. In this work, a numerical modeling analysis of the gas-phase decomposition of CF4/O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes was determined as well as the effect of the parameters' uncertainties. The results were compared with experimental data. The main etching agent in the system is the fluorine atom. The concentration of the main species, SiF4, CO, CO2 and COF2 depend on the composition of the mixture.
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In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF4 / O2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the composition of the mixture. The etching rate is greater for SF6 / O2.
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Thermal cutting methods, are commonly used in the manufacture of metal parts. Thermal cutting processes separate materials by using heat. The process can be done with or without a stream of cutting oxygen. Common processes are Oxygen, plasma and laser cutting. It depends on the application and material which cutting method is used. Numerically-controlled thermal cutting is a cost-effective way of prefabricating components. One design aim is to minimize the number of work steps in order to increase competitiveness. This has resulted in the holes and openings in plate parts manufactured today being made using thermal cutting methods. This is a problem from the fatigue life perspective because there is local detail in the as-welded state that causes a rise in stress in a local area of the plate. In a case where the static utilization of a net section is full used, the calculated linear local stresses and stress ranges are often over 2 times the material yield strength. The shakedown criteria are exceeded. Fatigue life assessment of flame-cut details is commonly based on the nominal stress method. For welded details, design standards and instructions provide more accurate and flexible methods, e.g. a hot-spot method, but these methods are not universally applied to flame cut edges. Some of the fatigue tests of flame cut edges in the laboratory indicated that fatigue life estimations based on the standard nominal stress method can give quite a conservative fatigue life estimate in cases where a high notch factor was present. This is an undesirable phenomenon and it limits the potential for minimizing structure size and total costs. A new calculation method is introduced to improve the accuracy of the theoretical fatigue life prediction method of a flame cut edge with a high stress concentration factor. Simple equations were derived by using laboratory fatigue test results, which are published in this work. The proposed method is called the modified FAT method (FATmod). The method takes into account the residual stress state, surface quality, material strength class and true stress ratio in the critical place.
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L’objectif de ce mémoire de maîtrise est de développer et de caractériser diverses sources de neutres réactifs destinées à des études fondamentales des interactions plasmas-surfaces. Ce projet s’inscrit dans le cadre d’une vaste étude de la physique des interactions plasmas-parois mises en jeu dans les procédés de gravure par plasma des matériaux de pointe. Une revue de la littérature scientifique sur les diverses méthodes permettant de générer des faisceaux de neutres réactifs nous a permis de sélectionner deux types de sources. La première, une source pyrolitique, a été caractérisée par spectrométrie de masse en utilisant le C2F6 comme molécule mère. Nous avons montré que le C2F6 était dissocié à plus de 90% à 1000ºC et qu’il formait du CF4, lui-même dissocié en CF2 vers 900ºC. Ces résultats ont été validés à l’aide d’un modèle basé sur des calculs d’équilibres chimiques, qui a aussi prédit la formation de F à 1500ºC. La seconde source, un plasma entretenu par une onde électromagnétique de surfaces, a été caractérisée par spectroscopie optique d’émission et par interférométrie haute fréquence. Dans le cas du plasma d’argon créé par un champ électromagnétique (>GHz), nos travaux ont révélé une distribution en énergie des électrons à trois températures avec Te-low>Te-high
Analyse des processus de dérive lors de la gravure profonde du silicium dans des plasmas SF6 et C4F8
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L’objectif de ce mémoire de maîtrise est de développer des outils de diagnostics non-invasifs et de caractériser in-situ les dérives de procédé dans un réacteur industriel utilisé en production pour la gravure profonde du silicium par le procédé Bosch. Ce dernier repose sur l’alternance d’un plasma de SF6 pour la gravure isotrope du Si et d’un plasma de C4F8 pour la passivation des parois dans l’optique d’obtenir des tranchées profondes et étroites. Dans un premier temps, nous avons installé une sonde courant-tension sur la ligne de transmission du signal rf au porte-substrat pour l’étude de son impédance caractéristique et un spectromètre optique pour l’étude de l’émission optique du plasma. Nos travaux ont montré que l’évolution temporelle de l’impédance constitue un excellent moyen pour identifier des changements dans la dynamique du procédé, notamment une gravure complète de la photorésine. De plus, à partir des spectres d’émission, nous avons pu montrer que des produits carbonés sont libérés du substrat et des parois lors de l’alternance passivation/gravure et que ceux-ci modifient considérablement la concentration de fluor atomique dans le plasma. Dans un second temps, nous avons développé un réacteur à « substrat-tournant » pour l’analyse in-situ des interactions plasma-parois dans le procédé Bosch. Nos travaux sur ce réacteur visaient à caractériser par spectrométrie de masse l’évolution temporelle des populations de neutres réactifs et d’ions positifs. Dans les conditions opératoires étudiées, le SF6 se dissocie à près de 45% alors que le degré de dissociation du C4F8 atteint 70%. Le SF6 est avant tout dissocié en F et SF3 et l’ion dominant est le SF3+ alors que le C4F8 est fragmenté en CF, CF3 et CF4 et nous mesurons plusieurs ions significatifs. Dans les deux cas, la chaîne de dissociation demeure loin d’être complète. Nous avons noté une désorption importante des parois de CF4 lors du passage du cycle de passivation au cycle de gravure. Un modèle d’interactions plasmas-parois est proposé pour expliquer cette observation.
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High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.
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This work presents for the first time to our knowledge the fabrication and characterization of rib waveguides produced with PbO-GeO2 (PGO) thin films. The target was manufactured using pure oxides ( 60 PbO-40 GeO2, in wt%) and amorphous thin films were produced with the RF sputtering technique. PGO thin films present small absorption in the visible and in the near infrared and refractive index of similar to 2.0. The definition of the rib waveguide structure was made using conventional optical lithography followed by plasma etching, performed in a Reactive Ion Etching (RIE) reactor. Light propagation mode in the waveguide structure was analyzed using integrated optic simulation software. Optical loss measurements were performed to determine the propagation loss at 633 nm, for ribs with height of 70 nm and width of 3-5 mu m; experimental values around 2 dB/cm were found for the propagation loss and confirmed the theoretical calculations. The results obtained demonstrate that PGO thin films are potential candidates for application in integrated optics. Published by Elsevier B.V.
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Fabrication and optical characterization of Tm3+/Yb3+ codoped PbO-GeO2 (PGO) pedestal-type waveguides are investigated in this work. It is important to mention that, to the best of authors' knowledge, the use of PGO pedestal-type waveguide has not been studied before. PGO thin films codoped with Tm3+ and Yb3+ were obtained through RF magnetron sputtering technique. The pedestal profile was obtained using conventional optical lithography procedures, followed by plasma etching and sputtering deposition. The profile of Tm3+/Yb3+ codoped PGO waveguides was observed by means of Scanning Electron Microscopy (SEM) measurements. Also the infrared and infrared-to-visible frequency upconversion luminescences of Tm3+ ions were measured exciting the samples with a cw 980 nm diode laser. Propagation losses around 11 dB/cm and 9 dB/cm were obtained at 630 and 1050 nm, respectively, for waveguides in the 20-100 μm width range. Single-mode propagation was observed for waveguides width up to 12 μm and 7 μm, at 1050 nm and 630 nm, respectively; larger waveguides width provided multi-mode propagation. The present results corroborate the possibility of using Tm3+/Yb3+ codoped PGO thin films as active waveguide for photonic applications. © 2013 Elsevier B.V. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O-2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 mu m width range. Single-mode propagation was measured for waveguides width up to 10 mu m and 12 mu m, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (similar to 3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal waveguide for optical amplifiers. (C) 2014 Elsevier B.V. All rights reserved.