Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

Structural, Optical, and Piezoelectric Response of Lead-Free Ba0.95Mg0.05Zr0.1Ti0.9O3 Nanocrystalline Powder

Nanocrystalline powders of Ba1-xMgxZr0.1Ti0.9O3 (x = 0.025-0.1) were synthesized via citrate assisted sol-gel method. Interestingly, the one with x = 0.05 in the system Ba1-xMgxZr0.1Ti0.9O3 exhibited fairly good piezoelectric response aside from the other physical properties. The phase and structural confirmation of synthesized powder was established by X-ray powder diffraction (XRD) and Raman Spectroscopic techniques. Two distinct Raman bands i.e., 303 and 723 cm(-1) characteristic of tetragonal phase were observed. Thermogravimetric analysis (TGA) was performed to evaluate the phase decomposition of the as-synthesized Ba0.95Mg0.05Zr0.1Ti0.9O3 sample as a function of temperature. The average crystallite size associated with Ba0.95Mg0.05Zr0.1Ti0.9O3 was calculated using Scherrer formula based on the XRD data and was found to be 25 nm. However, Scanning and Transmission Electron Microscopy studies revealed the average crystallite size to be in the range of 30-40 nm, respectively. Kubelka-Munk function was employed to determine the optical band gap of these nanocrystallites. A piezoelectric response of 26 pm/V was observed for Ba0.95Mg0.05Zr0.1Ti0.9O3 nanocrystal by Piezoresponse Force Microscopy (PFM) technique. Photoluminescence (PL) study carried out on these nanocrystals exhibited a blue emission (470 nm) at room temperature.

Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

The properties of amorphous carbon (a-C) deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp3 fraction was found to strongly depend on the ion energy, giving a highly sp3 bonded a-C denoted as tetrahedral amorphous carbon (ta-C) at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp2 above a transition temperature, T1, of ≈200°C. Furthermore, T1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition temperature which we attribute to the medium range order of sp2 sites. We attribute the variation in film properties with the deposition temperature to diffusion of interstitials to the surface above T1 due to thermal activation, leading to the relaxation of density in context of a growth model. © 1997 American Institute of Physics.

Optical and electronic properties of amorphous diamond

The optical and electronic properties of highly tetrahedral amorphous diamond-like carbon (amorphous diamond, a-D) films were investigated. The structure of the films grown on silicon and glass substrates, under similar deposition conditions using a compact filtered cathodic vacuum arc system, are compared using electron energy loss spectroscopy (EELS). Results from hydrogenation of the films are also reported. The hydrogenated films show two prominent IR absorption peaks centered at 2920 and 2840 cm-1, which are assigned to the stretch mode of the C-H bond in the sp3 configuration on the C-H3 and C-H sites respectively. The high loss EELS spectra show no reduction in the high sp3 content in the hydrogenated films. UV and visible transmission spectra of a-D thin films are also presented. The optical band gap of 2.0-2.2 eV for the a-D films is found to be consistent with the electronic bandgap. The relationship between the intrinsic compressive stress in the films and the refractive index is also presented. The space charge limited current flow is analyzed and coupled with the optical absorption data to give an estimate of 1018 cm-3 eV-1 for the valence band edge density of states.

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550 degrees C to 700 degrees C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100 degrees C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600 degrees C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600 degrees C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600 degrees C, the Hall mobility achieves up to 938 cm(2)/Vs with electron concentration of 3.9 x 10(18) cm(-3).

Study of intensity-dependent nonlinear optical coefficients of GaP optical crystal at 800 nm by femtosecond pump-probe experiment

The intensity-dependent two-photon absorption and nonlinear refraction coefficients of GaP optical crystal at 800 nm were measured with time-resolved femtosecond pump-probe technique. A nonlinear refraction coefficient of 1.7*10^(-17) m2/W and a two-photon absorption coefficient of 1.5*10^(-12) m/W of GaP crystal were obtained at a pump intensity of 3.5*10^(12) W/m2. The nonlinear refraction coefficient saturates at 3.5*10^(12) W/m2, while the two-photon absorption coefficient keeps linear increase at 6*10^(12) W/m2. Furthermore, fifth-order nonlinear refraction of the GaP optical crystal was revealed to occur above pump intensity of 3.5*10^(12) W/m2.

THE OPTICAL AND ELECTRICAL-PROPERTIES OF DYSPROSIUM AND YTTERBIUM MONOPHOSPHIDES

Dysprosium and ytterbium monophosphides have been prepared by the solid state reaction. The optical and electrical properties have been studied. Evidence that DyP and YbP are semiconductors has been obtained from the study of the absorption spectrum, the negative temperature coefficient of resistance and the rectifying effect. Their energy gaps are determined as 1.15 eV for DyP and 1.30 eV for YbP, electric conduction type is n-type, resistivities are about 10(-2) ohm cm and Hall mobility is 8.5-80 cm2/Vs. The p-n junction is formed on the LnP/Si.

Nanocomposites for SERS : synthesis, optical and analytical studies

Esta tese descreve diversas estratégias preparativas assim como estudos de caracterização de nanocompósitos e outras nanoestruturas, para a análise em espectroscopia de Raman com intensificação por superfície (SERS). Em particular foi estudada a incorporação de nanopartículas (NPs) metálicas de Ag e Au em matrizes poliméricas visando avaliar o potencial destes materiais como novos substratos para SERS na deteção de moléculas. O primeiro capítulo consiste numa revisão bibliográfica, onde é destacado o desenvolvimento de novos substratos para SERS utilizando nomeadamente nanopartículas de Ag, Au e Cu. Numa primeira fase, esta secção apresenta uma breve descrição sobre as propriedades plasmónicas dos metais utilizados e alguns conceitos básicos de espectroscopia de difusão de Raman. Posteriormente, descreve-se em mais detalhe o efeito de SERS, revendo-se sobretudo a química de materiais descrita em trabalhos recentes tendo em conta a sua utilização como novas plataformas para análise química por SERS. O capítulo 2 descreve a síntese e caracterização de nanocompósitos de poli(acrilato de butilo) obtidos através de polimerização in situ por miniemulsão na presença de nanopartículas de Ag. Os nanocompósitos Ag/PtBA foram investigados como novos substratos de SERS visando o desenvolvimento de novas plataformas versáteis para deteção molecular. Estudos como o efeito da temperatura, pH e pressão foram investigados, visando a compreensão do efeito da matriz polimérica na difusão/adsorção do analito (ácido tiossalicílico) na superfície metálica. No capítulo 3, os nanocompósitos de Ag/PtBA descritos anteriormente foram investigados detalhadamente como substratos para bio-deteção em SERS, usando a adenina como analito modelo. Os nanocompósitos foram submetidos a vários tratamentos pré-analíticos para a bio-deteção da adenina. Foram realizadas experiências nos sistemas Ag/PtBA de modo a obter informação sobre o efeito do pH na deteção deste analito em soluções aquosas diluídas. Os nanocompósitos poliméricos obtidos apresentam a vantagem de poderem ser processados utilizando tecnologia disponível. Pelo que o estudo das suas propriedades térmicas é especialmente relevante. Assim, a influência da incorporação de NPs inorgânicas na temperatura de transição vítrea (Tg) do polímero PtBA foi investigada por meio de calorimetria diferencial de varrimento (DSC) e os resultados são apresentados no capítulo 4. Estes estudos descrevem efeitos na Tg do PtBA quando analisado em nanocompósitos obtidos por diferentes métodos (métodos ex situ e in situ), contendo nanopartículas metálicas com diferentes distribuições de tamanho e presentes em quantidade variável na matriz polimérica. Estes estudos possibilitaram relacionar a influência das NPs metálicas na mobilidade das cadeias poliméricas com as propriedades térmicas observadas. O capítulo 5 descreve a preparação e caracterização de materiais compósitos de base polimérica (PtBA) e NPs de Au com morfologia de bastonetes (NRs). Estes materiais foram investigados como substratos para SERS tendo originado um bom sinal de SERS na análise de 2-2’-ditiodipiridina. Investigouse igualmente o efeito da variação da morfologia das NPs metálicas (esferas e bastonetes), a razão de aspecto (R.A.) dos bastonetes e o tipo de matriz polimérica (PtBA e PnBA) no sinal de SERS. No capítulo 6 é descrita a utilização da técnica de SERS como método alternativo para a monitorização de alterações morfológicas de coloides de NRs de Au. Os NRs de Au foram recolhidos em diferentes fases de oxidação promovida pela presença de K2S2O8 e a sua sensibilidade como substratos de SERS foi avaliada utilizando o anião dietilditiocarbamato (DTC) como analito modelo. Os estudos foram realizados utilizando as linhas de excitação a 1064 nm e 633 nm. Este estudo demonstrou que a sensibilidade dos NRs de Au como substratos de SERS diminui à medida que a sua R.A. diminui devido à competitividade do CTAB (estabilizante) e o DTC pela superfície dos NRs. É de salientar que este processo é acompanhado por um diferente comportamento em termos de adsorção dos dois tautómeros do DTC à superfície do metal. O capítulo 7 introduz um novo tipo de compósitos para SERS, utilizando matrizes biopoliméricas. Assim, descreve-se a preparação e caracterização de nanocompósitos de carragenano e NPs de Ag. Nesta secção é avaliada a utilização destes materiais como novos substratos para a análise em SERS, utilizando a 2-2’-ditiodipiridina como molécula modelo. Descrevem-se estudos pioneiros que procuram relacionar a dependência do sinal de SERS com a força do gel. Para tal, realizou-se um estudo sistemático aos nanobiocompósitos usados como substratos de SERS em diferentes condições analíticas e investigaram-se as suas propriedades reológicas. No capitulo 8 é descrita a investigação de nanocompósitos de Ag/Gelatina como substratos para SERS, utilizando o anião dietilditiocarbamato como analito modelo. Realizaram-se várias experiências para correlacionar a variação da força do gel com o aumento do sinal de SERS bem como a diferente adsorção dos dois tautómeros do DTC à superfície do metal. Ao longo desta dissertação são apresentados metodologias distintas para a preparação e obtenção de nanocompósitos com base em polímeros (sintéticos ou naturais) e NPs metálicas (Ag e Au). Esta investigação não só permitiu a síntese e estudo de novos substratos para SERS mas também a compreensão do efeito matriz/NPs metálicas no sinal de SERS e na formação de “hot spots”. Este trabalho contribui para o enriquecimento na área da Nanociência e Nanotecnologia demonstrando a eficácia e reprodutibilidade de nanocompósitos com base em polímeros como novos substratos para SERS. Embora as propriedades óticas apresentadas por estes materiais serem aqui direcionadas para a deteção molecular pela técnica de SERS, estes materiais podem ser investigados em outras área tecnológicas.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

On the optical and electrical properties of rf and a.c. plasma polymerized aniline thin films

Polyaniline is a widely studied conducting polymer and is a useful material in its bulk and thin film form for many applications, because of its excellent optical and electrical properties. Pristine and iodine doped polyaniline thin films were prepared by a.c. and rf plasma polymerization techniques separately for the comparison of their optical and electrical properties. Doping of iodine was effected in situ. The structural properties of these films were evaluated by FTIR spectroscopy and the optical band gap was estimated from UV-vis-NIR measurements. Comparative studies on the structural, optical and electrical properties of a.c. and rf polymerization are presented here. It has been found that the optical band gap of the polyaniline thin films prepared by rf and a.c. plasma polymerization techniques differ considerably and the band gap is further reduced by in situ doping of iodine. The electrical conductivity measurements on these films show a higher value of electrical conductivity in the case of rf plasma polymerized thin films when compared to the a.c. plasma polymerized films. Also, it is found that the iodine doping enhanced conductivity of the polymer thin films considerably. The results are compared and correlated and have been explained with respect to the different structures adopted under these two preparation techniques

Optical and dielectric relaxor behaviour of Ba(Zr(0.25)Ti(0.75))O(3) ceramic explained by means of distorted clusters

In this work, Ba(Zr(0.25)Ti(0.75))O(3) ceramic was prepared by solid-state reaction. This material was characterized by x-ray diffraction and Fourier transform Raman spectroscopy. The temperature dependent dielectric properties were investigated in the frequency range from 1 kHz to 1 MHz. The dielectric measurements indicated a diffuse phase transition. The broadening of the dielectric permittivity in the frequency range as well as its shifting at higher temperatures indicated a relaxor-like behaviour for this material. The diffusivity and the relaxation strength were estimated using the modified Curie-Weiss law. The optical properties were analysed by ultraviolet-visible (UV-vis) absorption spectroscopy and photoluminescence (PL) measurements at room temperature. The UV-vis spectrum indicated that the Ba(Zr(0.25)Ti(0.75))O(3) ceramic has an optical band gap of 2.98 eV. A blue PL emission was observed for this compound when excited with 350 nm wavelength. The polarity as well as the PL property of this material was attributed to the presence of polar [TiO(6)] distorted clusters into a globally cubic matrix.

Synthesis, optical and ferroelectric properties of PZT thin films: experimental and theoretical investigation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Optical and structural properties of PEO-like plasma polymers

This paper deals with the study of optical, structural and biocompatible properties of PEO-like plasma polymerized films resulting from RF excited diethylene glycol dimethyl ether (CH3O(CH2CH2O)(2)CH3 diglyme) glow discharges. The study was carried out using visible-ultraviolet and FTIR spectroscopies and contact angle measurements. FTIR spectra of plasma polymerized diglyme showed a stronger presence of ethylene glycol groups in film structure for lower RF power levels. The contact angle measurements for water revealed an increasing from 30degrees to 62,5degrees when the RF power was varied from 2 to 45 W, indicating the decreasing of the hydrophilic character of diglyme films with the increasing of RF power. This trend is in agreement with FTIR results. The data from visible-ultraviolet reflectance and transmittance spectra revealed alterations on optical properties of plasma polymerized diglyme films. The film's optical gap varied from 3.8 to 3 eV for RF power running from 5 to 45 W.

Optical and electrical properties of polymerizing plasmas and their correlation with DLC film properties

Diamond-like carbon (DLC) films were grown from radiofrequency plasmas of acetylene-argon mixtures, at different excitation powers, P. The effects of this parameter on the plasma potential, electron density, electron temperature, and plasma activity were investigated using a Langmuir probe. The mean electron temperature increased from about 0.5 to about 7.0 eV while the mean electron density decreased from about 1.2x10(9) to about 0.2x10(9) cm(-3) as P was increased from 25 to 150 W. Both the plasma potential and the plasma activity were found to increase with increasing P. Through actinometric optical emission spectrometry, the relative concentrations of CH, [CH], and H, [H], in the discharge were mapped as a function of the applied power. A rise in [H] and a fall in [CH] with increasing P were observed and are discussed in relation to the plasma characteristics and the subimplantation model. The optical properties of the films were calculated from ultraviolet-visible spectroscopic data; the surface resistivity was measured by the two-point probe method. The optical gap, E(G), and the surface resistivity, rho(s), fall with increasing P. E(G) and rho(s) are in the ranges of about 2.0-1.3 eV and 10(14)-10(16) Omega/square, respectively. The plasma power also influences the film self-bias, V(b), via a linear dependence, and the effect of V(b) on ion bombardment during growth is addressed together with variation in the relative densities of sp(2) and sp(3) bonds in the films as determined by Raman spectroscopy.

Optical and mechanical design of an ophthalmic instrument: Slit lamp

This work has as objective to develop an interesting research line in the Optical Instrumentation area, that is to associate the Optical Design to the Ophthalmology area. The purpose of it is handling the optical design techniques to design a widely used ophthalmologic instrument called slit lamp. The optical and mechanical design of the slit lamp prototype was carefully projected in order to improve the best quality image, the comfort of the patient and the user, the simplicity of handling, the facility of production the availability of optical and mechanical components in the national market and the low cost of production. The main goal of this work was to realize a project using totally national technology, cheapening the cost and forming the optimum image required for the slit lamp optical system.