937 resultados para Odd third order intensity parameters
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The effect of third-order dispersion in a Hong-Ou-Mandel interferometer is investigated using a ZnSe crystal as a dispersive medium. A value for the TOD coefficient of ZnSe is extracted which is consistent with literature values. © OSA 2013.
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We present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure. The sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. The nonlinear optical coefficients of the sample, which were measured with a Mach-Zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. The third-order signal was then detected by the Z-scan method and we calculated the built-in dc field on the AlGaN/GaN interface to confirm the strong interaction between the intrinsic second- and third-order optical fields. (c) 2008 American Institute of Physics.
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(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.
Tellurium enhanced non-resonant third-order optical nonlinearity in a germano-silicate optical fiber
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碲掺杂的高非线性石英光纤
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The absorption spectra of Er:YAG (YAG, yttrium-aluminium-garnet) crystals containing different concentrations of the trivalent erbium ion were measured and the spectral intensity parameters were calculated from these experimental spectra using the Judd-Ofelt model. The results indicate that the phenomenological intensity parameters, OMEGA(lambda) (lambda = 2, 4 and 6), vary as a function of the concentration of the Er3+ ion in the Er:YAG crystal, but no variation in the fluorescence-branching ratios as a function of the concentration of the Er3+ ion is found. An empirical formula is proposed to describe the relationship between the spectral intensity parameters and the Er3+ ion concentration in the Er:YAG crystal. The spectral intensity parameters exhibit a maximum in Er:YAG crystals containing about 1-1.5 at.% Er3+ ion. The effect of the Er3+ ion concentration on the spectral intensity parameters may be attributed to the inhomogeneous lattice distortion in the cell of the Er:YAG crystal caused by the dopant erbium ions.
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Interfacial internal waves in a three-layer density-stratified fluid are investigated using a singular method, and third-order asymptotic solutions of the velocity potentials and third-order Stokes wave solutions of the associated elevations of the interfacial waves are presented based on the small amplitude wave theory. as expected, the third-order solutions describe the third-order nonlinear modification and the third-order nonlinear interactions between the interfacial waves. The wave velocity depends on not only the wave number and the depth of each layer but also on the wave amplitude.
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We demonstrate the ability to control the molecular dissociation rate using femtosecond pulses shaped with third-order dispersion (TOD). Explicitly, a significant 50% enhancement in the dissociation yield for the low lying vibrational levels (v ∼ 6) of an H+2 ion-beam target was measured as a function of TOD. The underlying mechanism responsible for this enhanced dissociation was theoretically identified as non-adiabatic alignment induced by the pre-pulses situated on the leading edge of pulses shaped with negative TOD. This control scheme is expected to work in other molecules as it does not rely on specific characteristics of our test-case H+2 molecule.
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Third order nonlinear susceptibility χ(3) and second hyperpolarizability (γ) of a bis-naphthalocyanine viz. europium naphthalocyanines, Eu(Nc)2, were measured in dimethyl formamide solution using degenerate four wave mixing at 532 nm under nanosecond pulse excitation. Effective nonlinear absorption coefficient, βeff and imaginary part of nonlinear susceptibility, Im(χ(3)) were obtained using open aperture /Z-scan technique at the same wavelength. Optical limiting property of the sample was also investigated. The role of excited state absorption in deciding the nonlinear properties of this material is discussed.
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Wavelength dependence of saturable absorption (SA) and reverse saturable absorption (RSA) of zinc phthalocyanine was studied using 10 Hz, 8 ns pulses from a tunable laser, in the wavelength range of 520–686 nm, which includes the rising edge of the Q band in the electronic absorption spectrum. The nonlinear response is wavelength dependent and switching from RSA to SA has been observed as the excitation wavelength changes from the low absorption window region to higher absorption regime near the Q band. The SA again changes back to RSA when we further move over to the infrared region. Values of the imaginary part of third order susceptibility are calculated for various wavelengths in this range. This study is important in identifying the spectral range over which the nonlinear material acts as RSA based optical limiter.
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Wavelength dependence of saturable absorption (SA) and reverse saturable absorption (RSA) of zinc phthalocyanine was studied using 10 Hz, 8 ns pulses from a tunable laser, in the wavelength range of 520–686 nm, which includes the rising edge of the Q band in the electronic absorption spectrum. The nonlinear response is wavelength dependent and switching from RSA to SA has been observed as the excitation wavelength changes from the low absorption window region to higher absorption regime near the Q band. The SA again changes back to RSA when we further move over to the infrared region. Values of the imaginary part of third order susceptibility are calculated for various wavelengths in this range. This study is important in identifying the spectral range over which the nonlinear material acts as RSA based optical limiter.
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We have measured the changes in the ultrasonic wave velocity, induced by the application of uniaxial stresses in a Cu-Al-Ni single crystal. From these measurements, the complete set of third-order elastic constants has been obtained. The comparison of results for Cu-Al-Ni with available data for other Cu-based alloys has shown that all these alloys exhibit similar anharmonic behavior. By using the measured elastic constants in a Landau expansion for elastic phase transitions, we have been able to give an estimation of the value of a fourth-order elastic constants combination. The experiments have also shown that the application of a stress in the [001] direction, reduces the material resistance to a (110)[110] shear and thus favors the martensitic transition.
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In a recent paper A. S. Johal and D. J. Dunstan [Phys. Rev. B 73, 024106 (2006)] have applied multivariate linear regression analysis to the published data of the change in ultrasonic velocity with applied stress. The aim is to obtain the best estimates for the third-order elastic constants in cubic materials. From such an analysis they conclude that uniaxial stress data on metals turns out to be nearly useless by itself. The purpose of this comment is to point out that by a proper analysis of uniaxial stress data it is possible to obtain reliable values of third-order elastic constants in cubic metals and alloys. Cu-based shape memory alloys are used as an illustrative example.