Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations

In this paper, we propose for the first time, an analytical model for short channel effects in nanoscale source/drain extension region engineered double gate (DG) SOI MOSFETs. The impact of (i) lateral source/drain doping gradient (d), (ii) spacer width (s), (iii) spacer to doping gradient ratio (s/d) and (iv) silicon film thickness (T-si), on short channel effects - threshold voltage (V-th) and subthreshold slope (S), on-current (I-on), off-current (I-on) and I-on/I-off is extensively analysed by using the analytical model and 2D device simulations. The results of the analytical model confirm well with simulated data over the entire range of spacer widths, doping gradients and effective channel lengths. Results show that lateral source/drain doping gradient along with spacer width can not only effectively control short channel effects, thus presenting low off-current, but can also be optimised to achieve high values of on-currents. The present work provides valuable design insights in the performance of nanoscale DG Sol devices with optimal source/drain engineering and serves as a tool to optimise important device and technological parameters for 65 nm technology node and below. (c) 2006 Elsevier Ltd. All rights reserved.

Molecular dynamics simulation (MDS) to study nanoscale machining processes

Molecular Dynamics Simulations (MDS) are constantly being used to make important contributions to our fundamental understanding of material behaviour, at the atomic scale, for a variety of thermodynamic processes. This chapter shows that molecular dynamics simulation is a robust numerical analysis tool in addressing a range of complex nanofinishing (machining) problems that are otherwise difficult or impossible to understand using other methods. For example the mechanism of nanometric cutting of silicon carbide is influenced by a number of variables such as machine tool performance, machining conditions, material properties, and cutting tool performance (material microstructure and physical geometry of the contact) and all these variables cannot be monitored online through experimental examination. However, these could suitably be studied using an advanced simulation based approach such as MDS. This chapter details how MD simulation can be used as a research and commercial tool to understand key issues of ultra precision manufacturing research problems and a specific case was addressed by studying diamond machining of silicon carbide. While this is appreciable, there are a lot of challenges and opportunities in this fertile area. For example, the world of MD simulations is dependent on present day computers and the accuracy and reliability of potential energy functions [109]. This presents a limitation: Real-world scale simulation models are yet to be developed. The simulated length and timescales are far shorter than the experimental ones which couples further with the fact that contact loading simulations are typically done in the speed range of a few hundreds of m/sec against the experimental speed of typically about 1 m/sec [17]. Consequently, MD simulations suffer from the spurious effects of high cutting speeds and the accuracy of the simulation results has yet to be fully explored. The development of user-friendly software could help facilitate molecular dynamics as an integral part of computer-aided design and manufacturing to tackle a range of machining problems from all perspectives, including materials science (phase of the material formed due to the sub-surface deformation layer), electronics and optics (properties of the finished machined surface due to the metallurgical transformation in comparison to the bulk material), and mechanical engineering (extent of residual stresses in the machined component) [110]. Overall, this chapter provided key information concerning diamond machining of SiC which is classed as hard, brittle material. From the analysis presented in the earlier sections, MD simulation has helped in understanding the effects of crystal anisotropy in nanometric cutting of 3C-SiC by revealing the atomic-level deformation mechanisms for different crystal orientations and cutting directions. In addition to this, the MD simulation revealed that the material removal mechanism on the (111) surface of 3C-SiC (akin to diamond) is dominated by cleavage. These understandings led to the development of a new approach named the “surface defect machining” method which has the potential to be more effective to implement than ductile mode micro laser assisted machining or conventional nanometric cutting.

Effects of nanoparticles exposure in the mussel Mytilus Galloprovincialis

Tese de dout., Ciências do Mar, Terra e Ambiente (Ecotoxicologia), Faculdade de Ciências e Tecnologia, Univ. do Algarve, 2012

Compositional effects on structure and transport properties in a polyelectrolyte gel

The copolymerization of lithium 2-acrylamido-2-methyl-1-propane sulfonate (LiAMPS) with N,N ′-dimethylacrylamide has yielded polyelectrolyte systems which can be gelled with an ethylene carbonate/N ′,N ′-dimethylacetamide solvent mixture and show high ionic conductivities. 7Li linewidth and relaxation times as well as 1H NMR diffusion coefficients have been used to investigate the effect of copolymer composition as well as copolymer concentration in the gel electrolyte with respect to ionic transport and polyelectrolyte structure. It appears that ion association is likely even in the case of low lithium salt concentration; however a rapid exchange exists between the associated and non-associated lithium species. Beyond 0.2 M of LiAMPS, both the conductivity and solvent diffusion reach a plateau, whilst lithium ion linewidth and spin-spin relaxation are suggestive, on average, of a less mobile species. The thermal analysis data is also supportive of this association effectively leading to a form of phase separation on the nanoscale, which gives a lower overall activity of lithium ions in the solvent rich regions beyond about 0.2 M of LiAMPS, thereby leading to an increase in the final liquidus temperature of the binary liquid solvent from –9 to +5°C.

Strip twisted electrospun nanofiber yarns: Structural effects on tensile properties

Nanofiber yarns with controlled twist levels were prepared by twisting a narrow fibrous strip cut directly from electrospun nanofiber mats. The effects of fiber morphology, diameter and orientation, as well as the yarn twist level on the yarn tensile properties were examined. For the yarns made from randomly oriented fine uniform nanofibers (e.g., diameter 359 nm) and beaded nanofibers, the tensile strength increased with increasing the yarn twist level. Higher fiber diameter (e.g., 634 nm) led to the tensile strength having an initial increase and then decrease trend. The modulus increased with the twist level for all the yarns studied. However, the elongation at break increased initially with the twist level and subsequently decreased. The orientation of aligned fibers within the fiber strip greatly influenced the yarn tensile properties. When the fibers were oriented along the fiber length direction, both tensile strength and modulus were the largest.

Multifunctional properties of epoxy nanocomposites reinforced by aligned nanoscale carbon

The present paper compares improvements to the fracture energy and electrical conductivity of epoxy nanocomposites reinforced by one-dimensional carbon nanofibres (CNFs) or two-dimensional graphene nanoplatelets (GNPs). The focus of this investigation is on the effects of the shape, orientation and concentration (i.e. 0.5, 1.0, 1.5 and 2.0 wt%) of nanoscale carbon reinforcements on the property improvements. Alignment of the nano-reinforcements in the epoxy nanocomposites was achieved through the application of an alternating current (AC) electric-field before gelation and curing of the epoxy resin. Alignment of the nano-reinforcements increased the electrical conductivity and simultaneously lowered the percolation threshold necessary to form a conductive network in the nanocomposites. Nano-reinforcement alignment also increased greatly the fracture energy of the epoxy due to a higher fraction of the nano-reinforcement participating in multiple intrinsic (e.g. interfacial debonding and void growth) and extrinsic (e.g. pull-out and bridging) toughening mechanisms. A mechanistic model is presented to quantify the contributions from the different toughening mechanisms induced by CNFs and GNPs to the large improvements in fracture toughness. The model results show that one-dimensional CNFs are more effective than GNPs at increasing the intrinsic toughness of epoxy via void growth, whereas two-dimensional GNPs are more effective than CNFs at improving the extrinsic toughness via crack bridging and pull-out.

Electronic states in quantum rings: electric field and eccentricity effects

The polarization effects of in-plane electric fields and eccentricity on electronic and optical properties of semiconductor quantum rings (QRs) are discussed within the effective-mass approximation. As eccentric rings may appropriately describe real (grown or fabricated) QRs, their energy spectrum is studied. The interplay between applied electric fields and eccentricity is analysed, and their polarization effects are found to compensate for appropriate values of eccentricity and field intensity. The importance of applied fields in tailoring the properties of different nanoscale materials and structures is stressed.

Effects of substituting ytterbium for scandium on the microstructure and age-hardening behaviour of Al-Sc alloy

In order to reduce the cost of Al-Sc alloys and maintain their mechanical properties, the microstructure and mechanical properties of Al-0.24 wt% Sc-0.07 wt% Yb in comparison with Al-0.28 wt% Sc alloys were studied. The aging behaviour, precipitate morphologies, precipitate coarsening and precipitation hardening of both alloys were investigated. The average diameter and the size distribution of nanoscale Al3Sc and Al-3(Sc,Yb) precipitates at various aging conditions were measured. Transmission electron microscopy (TEM) and high-resolution TEM were used to deeply understand the precipitate evolution. A maximum hardness around 73 (HV30) was obtained with a precipitate diameter from 4.3 to 5.6 nm for both alloys. (c) 2014 Elsevier B.V. All rights reserved.

Confinement effects and why carbon nanotube bundles can work as gas sensors

Carbon nanotubes have been at the forefront of nanotechnology, leading not only to a better understanding of the basic properties of charge transport in one dimensional materials, but also to the perspective of a variety of possible applications, including highly sensitive sensors. Practical issues, however, have led to the use of bundles of nanotubes in devices, instead of isolated single nanotubes. From a theoretical perspective, the understanding of charge transport in such bundles, and how it is affected by the adsorption of molecules, has been very limited, one of the reasons being the sheer size of the calculations. A frequent option has been the extrapolation of knowledge gained from single tubes to the properties of bundles. In the present work we show that such procedure is not correct, and that there are qualitative differences in the effects caused by molecules on the charge transport in bundles versus isolated nanotubes. Using a combination of density functional theory and recursive Green's function techniques we show that the adsorption of molecules randomly distributed onto the walls of carbon nanotube bundles leads to changes in the charge density and consequently to significant alterations in the conductance even in pristine tubes. We show that this effect is driven by confinement which is not present in isolated nanotubes. Furthermore, a low concentration of dopants randomly adsorbed along a two-hundred nm long bundle drives a change in the transport regime; from ballistic to diffusive, which can account for the high sensitivity to different molecules.

Effect of Composition on the Physical Properties at Nanoscale of PZT Thin Films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of the Influence of Localized Vibrational Modes in Charge Transport Properties at Nanoscale Systems.

In molecular and atomic devices the interaction between electrons and ionic vibrations has an important role in electronic transport. The electron-phonon coupling can cause the loss of the electron's phase coherence, the opening of new conductance channels and the suppression of purely elastic ones. From the technological viewpoint phonons might restrict the efficiency of electronic devices by energy dissipation, causing heating, power loss and instability. The state of the art in electron transport calculations consists in combining ab initio calculations via Density Functional Theory (DFT) with Non-Equilibrium Green's Function formalism (NEGF). In order to include electron-phonon interactions, one needs in principle to include a self-energy scattering term in the open system Hamiltonian which takes into account the effect of the phonons over the electrons and vice versa. Nevertheless this term could be obtained approximately by perturbative methods. In the First Born Approximation one considers only the first order terms of the electronic Green's function expansion. In the Self-Consistent Born Approximation, the interaction self-energy is calculated with the perturbed electronic Green's function in a self-consistent way. In this work we describe how to incorporate the electron-phonon interaction to the SMEAGOL program (Spin and Molecular Electronics in Atomically Generated Orbital Landscapes), an ab initio code for electronic transport based on the combination of DFT + NEGF. This provides a tool for calculating the transport properties of materials' specific system, particularly in molecular electronics. Preliminary results will be presented, showing the effects produced by considering the electron-phonon interaction in nanoscale devices.

Physical models for numerical simulation of Si-based nanoscale FETs and sensors

To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Design (TCAD) simulation tools are needed to accurately predict the performance of upcoming nanoscale devices and to provide guidelines for their optimization. In this thesis, advanced physically-based mobility models for ultrathin body (UTB) devices with either planar or vertical architectures such as single-gate silicon-on-insulator (SOI) field-effect transistors (FETs), double-gate FETs, FinFETs and silicon nanowire FETs, integrating strain technology and high-κ gate stacks are presented. The effective mobility of the two-dimensional electron/hole gas in a UTB FETs channel is calculated taking into account its tensorial nature and the quantization effects. All the scattering events relevant for thin silicon films and for high-κ dielectrics and metal gates have been addressed and modeled for UTB FETs on differently oriented substrates. The effects of mechanical stress on (100) and (110) silicon band structures have been modeled for a generic stress configuration. Performance will also derive from heterogeneity, coming from the increasing diversity of functions integrated on complementary metal-oxide-semiconductor (CMOS) platforms. For example, new architectural concepts are of interest not only to extend the FET scaling process, but also to develop innovative sensor applications. Benefiting from properties like large surface-to-volume ratio and extreme sensitivity to surface modifications, silicon-nanowire-based sensors are gaining special attention in research. In this thesis, a comprehensive analysis of the physical effects playing a role in the detection of gas molecules is carried out by TCAD simulations combined with interface characterization techniques. The complex interaction of charge transport in silicon nanowires of different dimensions with interface trap states and remote charges is addressed to correctly reproduce experimental results of recently fabricated gas nanosensors.

Nanoscale-electrical and optical properties of iii-nitrides

III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high power high frequency transistors. Nonetheless, the use of (Al,In)GaN/GaN in solid state lighting has already proved its success by the commercialization of light-emitting diodes and lasers in blue to UV-range. However, devices based on these heterostructures suffer problems associated to structural defects. This thesis primarily focuses on the nanoscale electrical characterization and the identification of these defects, their physical origin and their effect on the electrical and optical properties of the material. Since, these defects are nano-sized, the thesis deals with the understanding of the results obtained by nano and micro-characterization techniques such as atomic force microscopy(AFM), current-AFM, scanning kelvin probe microscopy (SKPM), electron beam induced current (EBIC) and scanning tunneling microscopy (STM). This allowed us to probe individual defects (dislocations and cracks) and unveil their electrical properties. Taking further advantage of these techniques,conduction mechanism in two-dimensional electron gas heterostructures was well understood and modeled. Secondarily, origin of photoluminescence was deeply investigated. Radiative transition related to confined electrons and photoexcited holes in 2DEG heterostructures was identified and many body effects in nitrides under strong optical excitations were comprehended.

Investigation Of Leucine And Glutamic Acid Properties From The Nanoscale To The Macroscale

Aerosols are known to have important effects on climate, the atmosphere, and human health. The extent of those effects is unknown and largely depend on the interaction of aerosols with water in the atmosphere. Ambient aerosols are complex mixtures of both inorganic and organic compounds. The cloud condensation nuclei (CCN) activities, hygroscopic behavior and particle morphology of a monocarboxylic amino acid (leucine) and a dicarboxylic amino acid (glutamic acid) were investigated. Activation diameters at various supersaturation conditions were experimentally determined and compared with Köhler theoretical values. The theory accounts for both surface tension and the limited solubility of organic compounds. It was discovered that glutamic acid aerosols readily took on water both when relative humidity was less than 100% and when the supersaturation condition was reached, while leucine did not show any water activation at those conditions. Moreover, the study also suggests that Köhler theory describes CCN activity of organic compounds well when only surface tension of the compound is taken into account and complete solubility is assumed. Single parameter ¿ was also computed using both CCN data and hygroscopic growth factor (GF). The results of ¿ range from 0.17 to 0.53 using CCN data and 0.09 to 0.2 using GFs. Finally, the study suggests that during the water-evaporation/particle-nucleation process, crystallization from solution droplets takes place at different locations: for glutamic acid at the particles¿ center and leucine at the particles¿ boundary.

Using pMOS Pass-Gates to Boost SRAM Performance by Exploiting Strain Effects in Sub-20-nm FinFET Technologies

Strained fin is one of the techniques used to improve the devices as their size keeps reducing in new nanoscale nodes. In this paper, we use a predictive technology of 14 nm where pMOS mobility is significantly improved when those devices are built on top of long, uncut fins, while nMOS devices present the opposite behavior due to the combination of strains. We explore the possibility of boosting circuit performance in repetitive structures where long uncut fins can be exploited to increase fin strain impact. In particular, pMOS pass-gates are used in 6T complementary SRAM cells (CSRAM) with reinforced pull-ups. Those cells are simulated under process variability and compared to the regular SRAM. We show that when layout dependent effects are considered the CSRAM design provides 10% to 40% faster access time while keeping the same area, power, and stability than a regular 6T SRAM cell. The conclusions also apply to 8T SRAM cells. The CSRAM cell also presents increased reliability in technologies whose nMOS devices have more mismatch than pMOS transistors.