Dielectric, Ferroelectric and Relaxor Behavior of BaLaxBi4-xTi4O15 Ceramics

Monophasic BaLaxBi4-xTi4O15 (x = 0, 0.2, 0.4, 0.6 and 0.8) ceramics, fabricated from the powders synthesized via the solid-state reaction route exhibited relaxor behavior. Dielectric properties of the well sintered ceramics were measured in a wide frequency range (1 kHz-1 MHz) at different temperatures (300-750 K). The temperature of dielectri maximum (T-m) was found to decrease significantly from 696 K for an undoped sample (x = 0) to 395 K for the sample corresponding to the composition x = 0.8 accompanied by a decrease in the magnitude ofdielectric maximum (epsilon(m)). The temperature variation of the dielectric constant on the high temperature slope of the peak (T > T-m) was analyzed by using the Lorentz-ype quadratic law and the diffuseness of the peak was found to increase with increasing x. Vogel-Fulcher modelling of dielectric relaxation showed a decrease in freezing temperature (T-VF) (from 678 to 340 K) and an increase in the activation energy (5 to 24 meV) for the frequency dispersion with increase in x (La-3 divided by content). Strength of frequency dispersion of the phase transition increased with lanthanum content. Polarization (P)-electric field (E) hysteresis loops recorded at 373 showed a transition from a nearly squarish to slim loop hysteresis behavior with increasing lanthanum content.

The significance of brittle reaction layers in fusing of dental ceramics to titanium

This thesis comprises four intercomplementary parts that introduce new approaches to brittle reaction layers and mechanical compatibility of metalloceramic joints created when fusing dental ceramics to titanium. Several different methods including atomic layer deposition (ALD), sessile drop contact angle measurements, scanning acoustic microscopy (SAM), three-point bending (TPB, DIN 13 927 / ISO 9693), cross-section microscopy, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS) were employed. The first part investigates the effects of TiO2 layer structure and thickness on the joint strength of the titanium-metalloceramic system. Samples with all tested TiO2 thicknesses displayed good ceramics adhesion to Ti, and uniform TPB results. The fracture mode was independent of oxide layer thickness and structure. Cracking occurred deeper inside titanium, in the oxygen-rich Ti[O]x solid solution surface layer. During dental ceramics firing TiO2 layers dissociate and joints become brittle with increased dissolution of oxygen into metallic Ti and consequent reduction in the metal plasticity. To accomplish an ideal metalloceramic joint this needs to be resolved. The second part introduces photoinduced superhydrophilicity of TiO2. Test samples with ALD deposited anatase TiO2 films were produced. Samples were irradiated with UV light to induce superhydrophilicity of the surfaces through a cascade leading to increased amount of surface hydroxyl groups. Superhydrophilicity (contact angle ~0˚) was achieved within 2 minutes of UV radiation. Partial recovery of the contact angle was observed during the first 10 minutes after UV exposure. Total recovery was not observed within 24h storage. Photoinduced ultrahydrophilicity can be used to enhance wettability of titanium surfaces, an important factor in dental ceramics veneering processes. The third part addresses interlayers designed to restrain oxygen dissolution into Ti during dental ceramics fusing. The main requirements for an ideal interlayer material are proposed. Based on these criteria and systematic exclusion of possible interlayer materials silver (Ag) interlayers were chosen. TPB results were significantly better in when 5 μm Ag interlayers were used compared to only Al2O3-blasted samples. In samples with these Ag interlayers multiple cracks occurred inside dental ceramics, none inside Ti structure. Ag interlayers of 5 μm on Al2O3-blasted samples can be efficiently used to retard formation of the brittle oxygen-rich Ti[O]x layer, thus enhancing metalloceramic joint integrity. The most brittle component in metalloceramic joints with 5 μm Ag interlayers was bulk dental ceramics instead of Ti[O]x. The fourth part investigates the importance of mechanical interlocking. According to the results, the significance of mechanical interlocking achieved by conventional surface treatments can be questioned as long as the formation of the brittle layers (mainly oxygen-rich Ti[O]x) cannot be sufficiently controlled. In summary in contrast to former impressions of thick titanium oxide layers this thesis clearly demonstrates diffusion of oxygen from sintering atmosphere and SiO2 to Ti structures during dental ceramics firing and the following formation of brittle Ti[O]x solid solution as the most important factors predisposing joints between Ti and SiO2-based dental ceramics to low strength. This among other predisposing factors such as residual stresses created by the coefficient of thermal expansion mismatch between dental ceramics and Ti frameworks can be avoided with Ag interlayers.

Dielectric, pyroelectric and ferroelectric properties of Bi4Ti2.98Nb0.01Ta0.01O12 ceramics

The electrical conductivity and electrical relaxation for ferroelectric Bi4Ti2.98Nb0.01Ta0.01O12 (BTNT) ceramics have been reported in the frequency range 0.1 Hz to 1 MHz and in the 300-550 degrees C temperature range. The electrical data was analyzed in the framework of the dielectric as well as the electric modulus formalisms. The bulk dc conductivity at various temperatures was extracted from the electrical relaxation data. The activation energy associated with the electrical relaxation determined from the electric modulus spectra was found to be 0.93 +/- 0.03 eV, close to that of the activation energy for dc conductivity (1.03 +/- 0.02 eV). It suggests that the movements of oxygen ions are responsible for both ionic conduction as well as the relaxation process. The pyroelectric coefficient was found to be 12 mu C m(-2) K-1 at room temperature which is higher than that of the reported value of pyroelectric coefficient for undoped Bi4Ti3O12 ceramics. (C) 2010 Elsevier B.V. All rights reserved.

Crystallographic Evolution, Dielectric, and Piezoelectric Properties of Bi4Ti3O12:W/Cr Ceramics

W/Cr codoped Bi4Ti3O12 ceramics, Bi4Ti3-xWxO12+x+0.2 wt%Cr2O3 (BITWC, x=0-0.15), were prepared using a solid-state reaction method. The crystallographic evolution and phase analysis were distinctly determined focusing on the X-ray diffraction peak changes in (020)/(200) and (220)/(1115) diffraction planes, by which the lattice parameters, a, b, and c can be refined. The thermal variations of permittivity, dielectric loss (tan delta), impedance, and electrical conductivity properties were characterized. A decrease in the values of Curie temperature from 675 degrees to 640 degrees C and an increase in the values of the dielectric constant due to an increase of W6+/Cr3+ content were observed. The highest piezoelectric constant, d(33) of 22 pC/N, was achieved with the composition of Bi4Ti2.975W0.025O12.025+0.2 wt% Cr2O3. Also, this composition had a lower electrical conductivity than the other investigated compositions.

Low-voltage varistors from ZnO+CaMnO3 ceramics

: Varistors prepared from ZnO with CaMnO3 perovskite as the only forming additive, exhibit voltage-limiting current-voltage characteristics with nonlinearity coefficient alpha up to 380 at low voltages of 1.8-12 V/mm. High nonlinearity is observed only with a suitable combination of processing parameters. The most crucial of them are (i) initial formulation of ceramics and (ii) the sintering temperature and conditions of post-sinter annealing. An electrically active intergranular phase is formed between ZnO grains with the composition ranging from Ca4Mn6Zn4O17 to Ca4Mn8Zn3O19, which creates the n-p-n heterojunctions. The low-voltage nonlinearity originates as a result of higher concentration of Mn(III)/Mn(IV) present at the grain boundary layer regions, being charge compensated by zinc vacancies. Under the external electric field, the barrier height is lowered due to the uphill diffusion of holes mediated by the acceptor states. Above the turn-on voltages, the unhindered transport of charge carriers between grains generates high current density associated with large nonlinearity.

Dielectric properties of barium magnesiotitanate ceramics, BaMg6Ti6O19

Phase-pure samples of barium magnesiotitanate, BaMg6Ti6O19 (BMT) are prepared by the wet chemical `gel-carbonate' method wherein the formation of BMT is complete below 950 degrees C as a result of the reaction between nanoparticles of BaCO3, MgO and TiO2. BMT powders are sintered at 1350-1450 C to dense ceramics. Extensive melting is noticed when the bulk composition falls between 0.4MgTiO(3)+0.6BaTiO(3)) and (0.6MgTiO(3)+0.4BaTiO(3)) along the MgTiO3-BaTiO3 tie-line in BaO-MgO-TiO2, phase diagram. Dielectric properties of sintered (BMT) ceramics have been investigated which showed epsilon similar or equal to 39 at 2 GHz, quality factor Q >= 10,000 and positive temperature coefficient of dielectric constant around 370 ppm degrees C-1.

Intelligent Processing Of Zno-Based Ceramics

The Intelligent Decision Support System (IDSS), also called an expert system, is explained. It was then applied to choose the right composition and firing temperature of a ZnO based varistor. 17 refs.

Low-temperature internal friction of glass ceramics

Low-temperature internal-friction measurements have been used to study the universal low-energy excitations in glasses before and after crystallization in two glass ceramics, one based on MgO-Al2O3-SiO2 (Corning Code 9606) and one based on Li2O-Al2O3-SiO2 (Corning Code 9623). In the Code 9606 sample, the number density of excitations is greatly reduced, while in the Code 9623 sample, their number density remains practically unaltered in the crystallized state. These measurements confirm the conclusions reached by Cahill et al. (preceding paper), which were based on thermal measurements up to room temperature. These measurements also demonstrate the usefulness of internal friction as a tool for the study of these low-energy excitations, since internal friction is less sensitive to defects common to glass ceramics, like magnetic impurities and grain boundaries, which tend to dominate low-temperature specific heat and thermal conductivity, respectively.

Varistors based on mixed‐phase ceramics containing ZnO and negative temperature coefficient spinels

High nonlinearity coefficients of 60–150 are observed in the current‐voltage (I‐V) curves of the mixed phase ceramics formed by cosintering ZnO with spinel phases having large negative temperature coefficients (NTCs) in resistivity. The region of negative slope in the I‐V curves of the NTC ceramics is progressively made positive with ZnO phase content, wherein ZnO grains function as a built‐in resistor in series to the resistance of the NTC phase. High α depends on the optimum phase content of ZnO as much as its intrinsic conductivity. The studies indicate that the predominent contribution to power dissipation is by way of joule heating from the resistive component of the current.

Structure, dielectric, and magnetic properties of Sr2TiMnO6 ceramics

Sr2TiMnO6, a double perovskite associated with high degree of B-site cation disorder was investigated in detail for its structural, magnetic, and dielectric properties. Though x-ray powder diffraction analysis confirms its cubic structure, first order Raman scattering and infrared reflectivity spectra indicate a breaking of the local cubic symmetry. The magnetization study reveals an anomaly at 14 K owing to a ferrimagnetic/canted antiferromagneticlike ordering arising from local Mn-O-Mn clusters. Saturated M-H hysteresis loops obtained at 5 K also reflect the weak ferromagnetic exchange interactions present in the system and an approximate estimation of Mn3+/Mn4+ was done using the magnetization data for the samples sintered at different temperatures. The conductivity and dielectric behavior of this system has been investigated in a broad temperature range of 10 to 300 K. Intrinsic permittivity was obtained only below 100 K whereas giant permittivity due to conductivity and Maxwell-Wagner polarization was observed at higher temperatures. X-ray photoemission studies further confirmed the presence of mixed oxidation states of Mn and the valence band spectra analysis was carried out in detail. (C) 2010 American Institute of Physics. doi: 10.1063/1.3500369]

Wide Ranged La Modification in CCTO Ceramics Through Sol-Gel: Effect on Microstructure and Dielectric Properties

Sol-Gel method was employed to synthesize pure and wide ranged La-modified CaCu3Ti4O12 ceramics using mixed acetate-nitrate-alcoxide individual metal-ion precursors. SEM pictures revealed that grain size monotonously decreases with the extent of La incorporation. All the prepared ceramics manifested dielectric constant in the range similar to 10(3)-10(4). Dielectric loss was found to decrease with La incorporation and got optimized for 20% La3+ while retaining its high dielectric constant which may be industrially important. Room temperature Impedance spectroscopy suggested that decrease in grain resistance is responsible for reduction in dielectric loss according to Internal Barrier Layer Capacitor (IBLC) model.

Dielectric relaxation in bismuth layer-structured BaBi4Ti4O15 ferroelectric ceramics

The dielectric properties of BaBi4Ti4O15 ceramics were investigated as a function of frequency (10(2)-10(6) Hz) at various temperatures (30 degrees C-470 degrees C), covering the phase transition temperature. Two different conduction mechanisms were obtained by fitting the complex impedance data to Cole-Cole equation. The grain and grain boundary resistivities were found to follow the Arrhenius law associated with activation energies: E-g similar to 1.12 eV below T-m and E-g similar to 0.70 eV above T-m for the grain conduction; and E-gb similar to 0.93 eV below T-m and E-gb similar to 0.71 eV above T-m for the grain boundary conduction. Relaxation times extracted using imaginary part of complex impedance Z `'(omega) and modulus M `'(omega) were also found to follow the Arrhenius law and showed an anomaly around the phase transition temperature. The frequency dependence of conductivity was interpreted in terms of the jump relaxation model and was fitted to the double power law. (C) 2010 Elsevier B. V. All rights reserved.

Magnetic properties of pure, Sr- and Ca-Doped La2NiO4+δ ceramics: Onset of high-Tc superconductivity

We present the results for the temperature and field dependence of the magnetic for ceramic materials of the composition La2−xMxNiO4, with M=Sr or Ca and 0≤x≤0.4. The onset of a strong diamagnetism has been observed at temperatures between 8 and 70 K, depending on sample composition, annealing conditions. and thermal cycling procedures. The results are similar to those obtained earlier for monocrystalline samples and are likewise interpreted as due to the onset of superconductivity in a minority phase. A comparison with the results for superconducting La1.8Sr0.2Cu0.9Ni0.1O4 ceramics is also made; this illustrates some unique features of the nickelate systems, such as the high values of the critical fields Hc1 and Hc2. The differences between monocrystalline and ceramic systems are also discussed.

Field-dependent changeover from current-to voltage-limiting characteristics by non-linear n-type BaTiO3 ceramics

Non-linear resistors having current-limiting capabilities at lower field strengths, and voltage-limiting characteristics (varistors) at higher field strengths, were prepared from sintered polycrystalline ceramics of (Ba0.6Sr0.4)(Ti0.97Zr0.03)O3+0.3 at % La, and reannealed after painting with low-melting mixtures of Bi2O3 + PbO +B2O3. These types of non-linear characteristics were found to depend upon the non-uniform diffusion of lead and the consequent distribution of Curie points (T c) in these perovskites, resulting in diffuse phase transitions. Tunnelling of electrons across the asymmetric barrier at tetragonak-cubic interfaces changes to tunnelling across the symmetric barrier as the cubic phase is fully stabilized through Joule heating at high field strengths. Therefore the current-limiting characteristics switch over to voltage-limiting behaviour because tunnelling to acceptor-type mid-bandgap states gives way to band-to-band tunnelling.