Spin-Valve-Like Magnetoresistance in Mn2NiGa at Room Temperature

Spin valves have revolutionized the field of magnetic recording and memory devices. Spin valves are generally realized in thin film heterostructures, where two ferromagnetic (FM) layers are separated by a nonmagnetic conducting layer. Here, we demonstrate spin-valve-like magnetoresistance at room temperature in a bulk ferrimagnetic material that exhibits a magnetic shape memory effect. The origin of this unexpected behavior in Mn2NiGa has been investigated by neutron diffraction, magnetization, and ab initio theoretical calculations. The refinement of the neutron diffraction pattern shows the presence of antisite disorder where about 13% of the Ga sites are occupied by Mn atoms. On the basis of the magnetic structure obtained from neutron diffraction and theoretical calculations, we establish that these antisite defects cause the formation of FM nanoclusters with parallel alignment of Mn spin moments in a Mn2NiGa bulk lattice that has antiparallel Mn spin moments. The direction of the Mn moments in the soft FM cluster reverses with the external magnetic field. This causes a rotation or tilt in the antiparallel Mn moments at the cluster-lattice interface resulting in the observed asymmetry in magnetoresistance.

Engineered spin-valve type magnetoresistance in Fe3O4-CoFe2O4 core-shell nanoparticles

Naturally occurring spin-valve-type magnetoresistance (SVMR), recently observed in Sr2FeMoO6 samples, suggests the possibility of decoupling the maximal resistance from the coercivity of the sample. Here we present the evidence that SVMR can be engineered in specifically designed and fabricated core-shell nanoparticle systems, realized here in terms of soft magnetic Fe3O4 as the core and hard magnetic insulator CoFe2O4 as the shell materials. We show that this provides a magnetically switchable tunnel barrier that controls the magnetoresistance of the system, instead of the magnetic properties of the magnetic grain material, Fe3O4, and thus establishing the feasibility of engineered SVMR structures. (C) 2013 AIP Publishing LLC.

Magnetoresistance and electroresistance effects in Fe3O4 nanoparticle system

Nearly monodisperse spherical magnetite (Fe3O4) nanoparticles are prepared by colloidal chemistry route. Magnetic and electronic transport properties of the annealed pellets of these nanoparticles are reported. Effect of external magnetic and electric fields on the magnetic and transport properties of the material are studied as a function of temperature. We find that the highest resistance state of the ferromagnetic system occurs at a magnetic field which is approximately equal to its magnetic coercivity; this establishes the magnetoresistance (MR) in this system to be of the conventional tunnelling type MR as against the spin-valve type MR found more recently in some ferromagnetic oxide systems. The material also shows electroresistance (ER) property with its low-temperature resistance being strongly dependent on the excitation current that is used for the measurement. This ER effect is concluded to be intrinsic to the material and is attributed to the electric field-induced melting of the charge-order state in magnetite.

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Low temperature magnetoresistance and magnetization studies of iron encapsulated multiwall carbon nanotube/polyvinyl chloride composites

We present the experimental results of temperature dependent magnetoresistance (MR) and the magnetization studies of iron encapsulated multiwall carbon nanotube (MWCNT)/polyvinyl chloride (PVC) composites with different wt% of MWCNTs. Transmission electron microscopy characterization shows that MWCNTs are encapsulated with rod-shaped iron nanoparticles of aspect ratio of similar to 3. The MR behavior of 1.9 wt% MWCNT/PVC sample shows dominance of forward scattering and wave function shrinkage whereas, weak localization and electron-electron interactions explain the MR data of higher wt% samples (9.1, 16.6 and 44.4 wt%). The composites of 4.7 and 9.1 wt% exhibit ferromagnetic behavior at all temperatures with room temperature coercivities of similar to 1036 and 628 Oe, respectively. (C) 2014 Elsevier Ltd. All rights reserved.

Ballistic Electron Transport In Hybrid Ferromagnet/Two-Dimensional Electron Gas Sandwich Nanostructure: Spin Polarization And Magnetoresistance Effect

We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3041477]

La 0.7Ca 0.3MnO 3 / Mn 3O 4 composites: Does an insulating secondary phase always enhance the low field magnetoresistance of manganites

Composites of magnetoresistive La 0.7Ca 0.3MnO 3 (LCMO) with insulating Mn 3O 4 are useful as a model system because no foreign cation is introduced in the LCMO phase by interdiffusion during the heat treatment. Here we report the magnetotransport properties as a function of sintering temperature T sinter for a fixed LCMO/Mn 3O 4 ratio. Decreasing T sinter from 1250 °C to 800 °C causes an increase in low field magnetoresistance (LFMR) that correlates with the decrease in crystallite size (CS) of the LCMO phase. When plotting LFMR at (77 K, 0.5 T) versus 1/CS, we find that the data for the LCMO/Mn 3O 4 composites sintered between 800 °C and 1250 °C follow the same trend line as data from the literature for pure LCMO samples with crystallite size >∼25 nm. This differs from the LFMR enhancement observed by many authors in the usual manganite composites, i.e., composites where the insulating phase contains cations other than La, Ca or Mn. This difference suggests that diffusion of foreign cations into the grain boundary region is a necessary ingredient for the enhanced LFMR. © 2012 American Institute of Physics.

Low-field magnetoresistance in La0.7Ca0.3MnO 3 manganite compounds prepared by the spray drying technique

Calcium-substituted lanthanum manganite compounds were synthesized by the spray drying technique. This method - whose main advantages are versatility, high reproducibility and scalability - yields small grain materials of high homogeneity and displaying low-field magnetoresistance effects. We report about the physical and chemical characterizations of these samples in order to investigate the potential interest of spray drying for the production of materials for low-field magnetoresistance applications. We have studied the dependence of the low-field magnetoresistance on the temperature and duration of the thermal treatment applied to the pelletized powders. The issue of the shape anisotropy (demagnetisation effects) influence on the magnetoresistance properties has also been dealt with. © 2005 Springer Science + Business Media, Inc.

Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well

Magnetotransport measurements have been carried out on In0.53Ga0.17As/In0.52Al0.48 As quantum wells in a temperature range between 1.5 and 77 K. We have observed a large positive magnetoresistance in the low magnetic field range, but saturating in high magnetic fields. The magnetoresistance results from two occupied subbands in the two-dimensional electron gas. With the intersubband scattering considered, we obtained the subband mobility by analyzing the positive magnetoresistance. It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.

Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions

We reported the all electronic demonstration of spin injection and detection in the trilayers with hybrid structure of CoFeB/GaAs/(Ga,Mn)As (metal/insulator semiconductor) by probing the magnetoresistance at low temperature from 1.8 to 30 K. Tunneling magnetoresistance (TMR) ratios of 3.8%, 4.7%, 2.9%, and 1.4% at 1.8, 10, 20, and 30 K, respectively, were observed. Bias dependence of both the junction resistance and TMR ratio was studied systematically. V-half at which TMR drops to half of its maximum is 6.3 mV, being much smaller compared to that observed in (Ga,Mn)As/ZnSe/Fe and (Ga,Mn)As/AlAs/MnAs hybrid structures, indicating lower Fermi energy of (Ga,Mn)As.

Theory of huge tunneling magnetoresistance in graphene

We investigate theoretically the spin-independent tunneling magnetoresistance effect in a graphene monolayer modulated by two parallel ferromagnets deposited on a dielectric layer. For the parallel magnetization configuration, Klein tunneling can be observed in the transmission spectrum but at specific oblique incident angles. For the antiparallel magnetization configuration, the transmission can be blocked by the magneticelectric barrier provided by the ferromagnets. Such a transmission discrepancy results in a tremendous magnetoresistance ratio and can be tuned by the inclusion of an electric barrier.