994 resultados para Laboratory controlled atmosphere


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For the chemical method of synthesis of co-precipitation were produced ferrite powders manganese-cobalt equal stoichiometric formula Mn (1-x) Co (x) Fe2O4, for 0 < x < 1, first reagent element using as the hydroxide ammonium and second time using sodium hydroxide. The obtained powders were calcined at 400 ° C, 650 ° C, 900 ° C and 1150 ° C in a conventional oven type furnace with an air atmosphere for a period of 240 minutes. Other samples were calcined at a temperature of 900 ° C in a controlled atmosphere of argon, to evaluate the possible influence of the atmosphere on the final results the structure and morphology. The samples were also calcined in a microwave oven at 400 ° C and 650 ° C for a period of 45 minutes possible to evaluate the performance of this type of heat treatment furnace. It was successfully tested the ability of this group include isomorphic ferrite with the inclusion of nickel cations in order to evaluate the occurrence of disorder in the crystalline structures and their changes in magnetic characteristics.To identify the structural, morphological, chemical composition and proportions, as well as their magnetic characteristics were performed characterization tests of X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDX), thermogravimetric (TG), vibrating sample magnetometry (MAV) and Mössbauer spectroscopy. These tests revealed the occurrence of distortion in the crystal lattice, changes in magnetic response, occurrence of nanosized particles and superparamagnetism

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O vigor de sementes de amendoim (Arachis hypogaea L.) avaliado pelo teste de condutividade elétrica demonstra estreita relação com o desempenho no campo, mas alguns fatores podem afetar o resultado da condutividade elétrica, sendo um destes o teor de água inicial das sementes. Assim, o objetivo deste trabalho foi avaliar o teor de água ou faixa de umidade da semente mais adequado para a avaliação da condutividade elétrica em sementes de amendoim. Quatro lotes de sementes da cultivar 'IAC Tatu ST' e quatro da cultivar 'IAC Runner 886' foram avaliados quanto ao seu potencial fisiológico e posteriormente o teor de água foi ajustado para 5, 7, 9, 11, 13 e 15%, pelo método da atmosfera úmida. O delineamento foi inteiramente casualizado em esquema fatorial 4×6 (lotes × teores de água) para as sementes de cada cultivar, em quatro repetições e os resultados para o fator teor de água foram submetidos à análise de regressão. A maior relação da condutividade elétrica com vigor das sementes ocorreu naquelas com teor de água entre 9 a 15%, de forma que sementes com 5 a 7% de umidade não devem ser submetidas ao teste de condutividade elétrica, porque os lotes expressam alto padrão de germinação e vigor. A condutividade elétrica de sementes de amendoim é influenciada pelo teor de água e a estabilização dos resultados ocorre quando elas estão com teor de água entre 10 e 14%.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fresh-cut carambola (Averrhoa carambola L.) has limited marketability due to cut-surface browning. The effect of chemical treatments (ascorbic acid, citric acid and Ca-EDTA), controlled atmosphere (0.4-20.3% O-2) and the association of these processes was investigated. Post-cutting dip and low-oxygen atmospheres did not prevent discoloration or improve sensory and physicochemical parameters. However, ascorbic acid (0.5% and 1%) dips reduced polyphenol oxidase (PPO) activity during storage at 4.5 degrees C, with 1% ascorbic acid inducing the lowest activity. Although cut-surface browning of 'Maha' slices was not relevant, carambola slices treated with 1% ascorbic acid in association with 0.4% oxygen did not present significant browning or loss of visual quality for up to 12 days, 3 days longer than low oxygen alone (0.4% O-2), thus, their quality can be significantly improved by combining both treatments. (c) 2007 Elsevier B.V. All rights reserved.

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O sucesso de uma boa aplicação de produtos fitossanitários depende da sinergia entre fatores como tamanho de gota, tipo de ponta, pressão, volume e composição da calda e características do alvo. Assim, o objetivo deste trabalho foi avaliar o espectro de gotas produzidas por pontas de jato plano defletor (TT 11002) e jato plano defletor com indução de ar (TTI 11002), com diferentes adjuvantes adicionados à calda de pulverização, pela técnica de difração de raio laser. O experimento foi conduzido em delineamento inteiramente casualizado, com quatro repetições, em esquema fatorial 2 x 5, ou seja, duas pontas de aplicação (jato plano defletor e jato plano defletor com indução de ar) e cinco composições de calda (água e água mais quatro adjuvantes: fosfatidilcoline+ácido propiônico, éter poliglicólico de monilfenol, ésteres de ácidos graxos e nonil-fenol etoxilado+óxido de etileno). em ambiente controlado, avaliou-se o espectro de gotas, por meio de um analisador a laser de gotas em tempo real, na pressão de 276 kPa. O efeito dos adjuvantes no espectro de gotas mostrou-se dependente da ponta de pulverização empregada. A adição dos adjuvantes à calda não alterou o risco potencial de deriva, expresso pela porcentagem do volume em gotas com diâmetro inferior a 100 µm, porém o adjuvante fosfatidilcoline+ácido propiônico reduziu o diâmetro da mediana volumétrica das gotas produzidas pela ponta de jato plano defletor com indução de ar, em relação à avaliação feita somente com água.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Thin films of perovskite-type materials such as PbTiO3, BaTiO3, (Pb,La)TiO3, (Pb, La)(ZrTi)O-3, KNbO3, and Pb(Mg,Nb)03 have been attracting great interest for applications like non-volatile memories, ultrasonic sensors and optical devices. Thin film should be epitaxially grown or at least highly textured since the properties of this anisotropic material depend on the crystallographic orientation. For optical devices, in particular, an epitaxial thin film without defects are essential to reduce optical propagation losses. Pb1-xLaxTiO3 (PLT) where x=0, 13 and 27% thin films were prepared by a chemical method (polymeric precursors method), and deposited by the spin coating technique onto substrates of SrTiO3 (STO) and LaAlO3 (LAO). The films were then beat treated at 500 degrees C in a controlled atmosphere of 0,. The orientation degree of the thin films was obtained from rocking curve technique, by means of X-ray difftaction analysis. A microstructural study revealed that the films were crack-free, homogeneous and have low roughness. (c) 2006 Elsevier B.V. All rights reserved.

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Superconductor films of the BSCCO system have been grown by dip coating technique with good success. The chemical method allows us to grow high temperature superconductor thin films to get better control of stoichiometry, large areas and is cheaper than other methods. There is a great technological interest in growth oriented superconductor films due anisotropic characteristics of superconductor materials of high critical temperature, specifically the cuprates, as we know that the orientation may increase the electrical transport properties. Based on this, the polymeric precursor method has been used to obtain thin films of the BSCCO system. In this work we have applied that method together with the deposition technique known as dip coating to obtain Bi-based superconductor thin films, specifically, Bi1.6Pb0.4Sr2.0C2.0Cu3.0Ox+8, also known as 2223 phase with a critical temperature around 110 K. The films with multilayers have been grown on crystalline substrates of LaAlO3 and orientated (100) after being heat treated around 790 degrees C - 820 degrees C in lapse time of 1 hour in a controlled atmosphere. XRD measurements have shown the presence of a crystalline phase 2212 with a critical temperature around 85 K with (001) orientation, as well as a small fraction of 2223 phase. SEM has shown a low uniformity and some cracks that maybe related to the applied heat treatment. WDS has also been used to study the films composition. Different heat treatments have been used with the aim to increase the percentage of 2223 phase. Measurements of resistivity confirmed the presence of at least two crystalline phases, 2212 and 2223, with T-c around 85 K and 110 K, respectively.

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The Lyonet's gland is found in Lepidoptera larvae, close to the excretory duct of the silk gland. The role played by this gland is still uncertain. This work aims to describe the ultrastructure of the Lyonet's bland in Diatraea saccharalis larvae, offering suggestions regarding its possible function. The insects were reared under laboratory-controlled conditions. The glands were conventionally prepared for transmission (TEM) and scanning (SEM) electron microscopy. SEM showed that Lyonet's glands are paired small structures located in the ventral side of the head. They are composed by clustered long cells resembling leaves. Under TEM observations, each cell is surrounded by a thin basal lamina and contains large stellate nucleus. The cytoplasm presents large and empty canaliculi with small microvilli. The basal plasma membrane forms numerous infoldings where numerous and well-developed mitochondria are concentrated. The cytoplasmic membrane system is poorly developed. Our ultrastructural results suggest that the Lyonet's gland in D. saccharalis larvae may be involved in the uptake of small molecules from the hemolymph no morphological evidences of macromolecules synthesis and secretion were noticed. The detection of nerve fibers in the gland suggest a neural control for the glandular cell function.

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Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (Vs) and of the proportion of TEOS in the mixture (XT) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on Vs and XT are presented. (c) 2007 Elsevier B.V. All rights reserved.

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Glasses of composition 40InF3-20SrF2-16BaF2-20ZnF 2-2GdF3-2NaF (mol%) have been prepared under controlled atmosphere. The time response of the stresses under the application of a constant strain was determined by microellipsometer technique, performed in ambient atmosphere at T < Tg = 294°C. The glasses show a Newtonian behavior at small stress level. During the relaxation process, very small grooves perpendicular to the applied strain appeared on the glass surface and affected its behavior after a time. The formation of these grooves is associated with the ambient atmosphere. Measurements in dry atmosphere showed that humidity was an important parameter in the relaxation process.

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Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

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MgB2 bulk samples containing different proportions of Mg-Ga powder were prepared by an in situ reaction technique. The Mg-Ga powder was obtained via high energy ball milling of a Mg-10 at.% Ga composite, which was fabricated by melting of pure magnesium and gallium metals inside encapsulated stainless steel tube at 655 °C in a controlled atmosphere. The MgB2 samples containing 0, 1, 3, 5 and 7 wt.% of MgGa addition were sintered at 650 °C for 30 min in argon atmosphere. Magnetic measurements performed at 5 K and 20 K showed improved critical current density, Jc, in the low magnetic field range for samples with MgGa addition. The critical temperature, Tc, for all samples with gallium additions is consistently higher when compared to the pure MgB2. © 2007 Elsevier B.V. All rights reserved.

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SiC fiber-reinforced SiC matrix composite (SiCf/SiC) is one of the leading candidates in ceramic materials for engineering applications due to its unique combination of properties such as high thermal conductivity, high resistance to corrosion and working conditions. Fiber-reinforced composites are materials which exhibit a significant improvement in properties like ductility in comparison to the monolithic SiC ceramic. The SiCf/SiC composite was obtained from a C/C composite precursor using convertion reaction under high temperature and controlled atmosphere. In this work, SiC phase presented the stacking faults in the structure, being not possible to calculate the unit cell size, symmetry and bond lengths but it seem equal card number 29-1129 of JCPDS.