An alluaudite Na-2+Fe-2x(2-x)(SO4)(3)(x=0.2) derivative phase as insertion host for lithium battery

A new desodiated derivative compound, Na0.89Fe1.8(SO4)(3), was prepared by the chemical oxidation of alluaudite Na2.4Fe1.8(SO4)(3) Phase using NOBF4 as oxidant. The structure and valency of Fe were characterized by X-ray diffraction (XRD) and Fe-57 Mossbauer spectroscopy. Intercalation behavior of lithium ions in the structure of Na0.89Fe1.8(SO4)(3) was gauged by electrochemical analyses and ex-situ X-ray diffraction. A high capacity of 110 mAh g(-1) at 0.1 C was obtained with a good rate kinetics within a range of 0.1-10 C(1 C = 118 mAh g-1) involving a high Fe3+/Fe2+ redox potential of 3.75 V (vs. Li/Li+). These results confirmed that the Na2.4-delta Fe1.8(SO4)(3) framework was stable even after oxidation and forms a new competitive cathode for the reversible intercalation of lithium ions. (C) 2014 Elsevier B.V. All rights reserved.

铝粉快速反应光谱中AlOB~2Σ~＋→X~2Σ~＋发射光谱的研究

在由光学多道分析仪收集的氢氧气体爆轰激励下铝粉快速反应光谱中，观察到ＡｌＯＢ２Σ＋→Ｘ２Σ＋跃迁Δｖ＝０带系的光谱特征与通常铝氧化反应的光谱特征不同。经分析是因为存在一个从４６７ｎｍ开始向长波方增强的连续辐射，它改变了该波长区ＡｌＯ分子的辐射特征。这一连续辐射可能是由铝与水蒸汽发生水合反应生成，而处于不同激发态的多原子分子ＨＡｌＯＨ产生

正激波后OH A~2∑~+──X~2∏瞬态光谱的测量

用光学多道分析仪（OMA光学系统）测量了氢氧燃烧驱动激波管中典型状态下正激波后高温空气不同时刻的瞬态光谱。光谱结果显示高温空气的光谱中有很强的OHA2∑＋─X2∏光谱。通过采用线线合成光谱的方法得到激波后不同时刻高温空气中OH分子的转动温度。

High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time

A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of I mm in length and cross-section of 400 nmx340 nm. The measurement results show that the switch has a V pi L pi figure of merit of 0.145 V-cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching

A 2 x 2 thermo-optic (TO) Mach-Zehnder (MZ) switch based on silicon waveguides with large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. The multi-mode interferometers (MMI) were used as power splitter and combiner in MZ structure. In order to get smooth interface, anisotropy chemical wet-etching of silicon was used to fabricate the waveguides instead of dry-etching. Additional grooves were introduced to reduce power consumption. The device has a low switching power of 235 mW and a switching speed of 60 mus. (C) 2004 Elsevier B.V. All rights reserved.

Silicon-on-insulator based 2 x 2 multimode interference coupler with large tolerance

We demonstrate a type of 2 x 2 multimode interference 3 dB coupler based on silicon-on-insulator. The fabrication tolerance was investigated by the effective index method and the guide mode method. The devices with different lengths were fabricated and near-held output images were obtained. Tolerances to width, length and etch depth are 2, 200 and 2 mum, respectively. The devices show a uniform power distribution.

Fabrication of 2 x 2 tapered multimode interference coupler

The authors demonstrate a 3dB 2 x 2 parabolically tapered multimode interference (MMT) coupler with a large cross-section and space between the different ports using silicon-on-insulator technology. The device exhibits a uniformity of < 0.8dB and can be used in the realisation of an MMI-based optical switch with a high extinction ratio.

高Tc超导体R_1Ba_2Cu_3O_(2-x)(R-rare earth)的磁性和超异电性研究

本论文合成了R_1Ba_2Cu_3O_(2-x) (R = La、Nd、Sm、Eu、Gd、Dr、Ho、Er、Tm、Yb)、Y_2Ba_2Cu_3O_(2-x) (x = 0.10～1.17)和Y_1Ba_2Cu_3O_(7-x)S_x (x = 0～2)，并对磁性和超导电性进行了较为系统的研究。R_1Ba_2Cu_3O_(2-x)的磁化率在T > Tc的很宽的温度范围内服从Curic-Weiss定律，求得的有效磁矩略大于理论值，差值与Y_1Ba_2Cu_3O_(2-x)中Cu~(2+)磁矩相近，说明Cu~(2+)的磁矩对体系磁性有额外贡献，这贡献随R~(3+)离子中自旋平行的电子权的增多而增大。其高温下的磁化率CT > 700K)相对Curic-Weiss定律发生较大偏离，这偏离可能的来源有三个：高温下稀土离子发生较大的能级反转效应，高温下结构相变对磁性的影响，高温下氧含量减少造成Cu~(2+)磁矩增大。R_1Ba_2Cu_3O_(2-x)磁化率在T < Tc时也服从Curic-Weiss定律，R~(3+)磁矩是定域的，表明超导与磁性相互独立。互不相关，稀土磁矩与传导电子间无相互作用。用Sr取代R_1Ba_2Cu_3O_(2-x)中的Ba，没能使体系产生磁有序的变化，但却使有效磁矩增大，并完全破坏了样品的超导电性。Sm~(3+)磁化率不服从Curic-Weiss定律，在Sm_1Ba_2Cu_3O_(2-x)中Sm~(3+)显示了典型Van VlccK离子的特性。Y_1Ba_2Cu_3O_(2-x)随氧含量减少发生超导体一半导体一绝缘体的转化，当氧含量由6.90减小至6.49时发生由正交到四方的结构相变。当(7-x) = 5.83时有较多杂质相出现，123相开始分解。样品磁化率均服从Curic-Weiss定律，并随氧含量增大磁化率－温度曲线越来越趋于平缓（直线），当(7-x) = 6.90时磁化率基本不随温度变化，这时Pauli顺磁性占主导地位，这说明氧含量增加定域磁矩减少，求得的有效磁矩Peff随氧含量增大总趋势减小。提出了电子“巡游”的观点，较好地解释了上述现象，并推测出Cu(2)的d电子是离域的，对样品磁矩没有贡献，样品Peff来源于部分Cu(1)的定域Cu~(2+)的磁矩，上述推测被EPR结果证实。正交相Y_1Ba_2Cu_3O_(2-x)的EPR谱显示了中心对称成准立方晶场中Cu~(2+)(d~9, S = 1/2, I = 3/2)的EPR物性。而四方相样品的EPR谱却出现了明显的各向异性，说明观察到的为Cu(1)的EPR信号，由Cu(1)~(2+)的写域磁矩产生。Y_1Ba_2Cu_3O_(2-x)的EPR信号束源于本体相，而非Y_2Cu_2O_5、BaCuO_2、Y_2BaCuO_5等杂质相。各样品EPR信号的自旋浓度远小于1spin/cu，并随氧含量减小而增大，当(7-x) = 6.49、6.40时自旋浓度出现陡增，这时伴随由正交到四方的转化，证明了电子“巡游”观点的正确。用硫部分取代Y_1Ba_2Cu_3O_2g中的氧，当Y_1Ba_2Cu_3O_(2-x)Sx中x = 0.11时Tc = 92.6K，比Y_1Ba_2Cu_3O_(7-x)升高2K，但由于杂质相的存在，ΔTc加宽。其他样品多为半导体和绝缘体。硫取代0，当x = 0.04，0.06，0.11和1.20时磁化率服从Curic-Weiss定律，并且x = 0.87，1.2时分别在230K、240K出现反铁磁有序。其他样品由于Cu被还原为＋1价而变成抗磁性。x = 0.11 (Tc = 92.6K)，EPR谱为正交场中Cu~(2+)的信号。自旋浓度与温度无关。当所有Cu均为Cu~(1+)时，测问的是-s-的EPR信号，而Cu为混合价态(+1和+2时)测问是上述两种信号的叠加。

2 x 2 electrooptical switch in silicon-on-insulator waveguide

A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7dB and crosstalk of 4.8dB has been observed.

激波管壁AlO自由基B~2∑~+-X~2∑~+和C~2∏_r-X~2∑~+带系辐射光谱的研究

爆轰驱动过程中产生的高温高压气流对铝质膜片、激波管壁产生烧蚀和冲刷作用,以致激波管壁、端盖上附有氧化铝等杂质,而高温下AlO自由基在气体分子的高速碰撞下被激发并产生强烈的辐射,从而干扰了高温气体辐射光谱的分析。用爆轰驱动加热技术将空气加热到4 000~7 000 K,利用多通道光学分析仪对AlO自由基辐射光谱进行分析,实验发现在460~530 nm波长范围内有多支辐射非常强烈的AlO自由基B2Σ+-X2Σ+(T00=20 689 cm-1)带系辐射谱带,且每支谱带都由多个带头组成,带头间隔约为2 nm,带头处于高频位置并向低频方向伸延。通过实验与理论计算相结合,重点分析了AlO自由基B2Σ+-X2Σ+带系辐射光谱的结构特征。AlO自由基C2Πr-X2Σ+(T00=33 047 cm-1)带系辐射光谱处于270~335 nm波长范围内,其辐射强度相对于B2Σ+-X2Σ+带系较弱,并且与OH基A2Σ+-X2Π(T00=32 682 cm-1)带系辐射光谱互相干扰而难以分辨,对该波段高温空气的辐射光谱分析产生不利的影响。

Twisted duality symmetry and integrability of hybrid superstring on AdS(2) x S-2

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