Effect of aspect ratio on thermal convection in open and closed systems

Internally heated fluids are found across the nuclear fuel cycle. In certain situations the motion of the fluid is driven by the decay heat (i.e. corium melt pools in severe accidents, the shutdown of liquid metal reactors, molten salt and the passive control of light water reactors) as well as normal operation (i.e. intermediate waste storage and generation IV reactor designs). This can in the long-term affect reactor vessel integrity or lead to localized hot spots and accumulation of solid wastes that may prompt local increases in activity. Two approaches to the modeling of internally heated convection are presented here. These are based on numerical analysis using codes developed in-house and simulations using widely available computational fluid dynamics solvers. Open and closed fluid layers at around the transition between conduction and convection of various aspect ratios are considered. We determine optimum domain aspect ratio (1:7:7 up to 1:24:24 for open systems and 5:5:1, 1:10:10 and 1:20:20 for closed systems), mesh resolutions and turbulence models required to accurately and efficiently capture the convection structures that evolve when perturbing the conductive state of the fluid layer. Note that the open and closed fluid layers we study here are bounded by a conducting surface over an insulating surface. Conclusions will be drawn on the influence of the periodic boundary conditions on the flow patterns observed. We have also examined the stability of the nonlinear solutions that we found with the aim of identifying the bifurcation sequence of these solutions en route to turbulence.

Fabrication of high aspect ratio microfluidic devices using direct FS ablation

We present a single stage direct fs ablation results which show that it is possible to make high quality and high aspect ratio devices in a single stage process using a CAD optimised approach.

Fabrication of high aspect ratio microfluidic devices using direct fs ablation

We present a single stage direct fs ablation results which show that it is possible to make high quality and high aspect ratio devices in a single stage process using a CAD optimised approach. © 2008 Optical Society of America.

Multilevel mesh partitioning for optimising subdomain aspect ratio

Multilevel algorithms are a successful class of optimisation techniques which address the mesh partitioning problem for mapping meshes onto parallel computers. They usually combine a graph contraction algorithm together with a local optimisation method which refines the partition at each graph level. To date these algorithms have been used almost exclusively to minimise the cut-edge weight in the graph with the aim of minimising the parallel communication overhead. However it has been shown that for certain classes of problem, the convergence of the underlying solution algorithm is strongly influenced by the shape or aspect ratio of the subdomains. In this paper therefore, we modify the multilevel algorithms in order to optimise a cost function based on aspect ratio. Several variants of the algorithms are tested and shown to provide excellent results.

Load balancing for aspect ratio in adaptive finite element simulations

In parallel adaptive finite element simulations the work load on the individual processors may change frequently. To (re)distribute the load evenly over the processors a load balancing heuristic is needed. Common strategies try to minimise subdomain dependencies by optimising the cutsize of the partitioning. However for certain solvers cutsize only plays a minor role, and their convergence is highly dependent on the subdomain shapes. Degenerated subdomain shapes cause them to need significantly more iterations to converge. In this work a new parallel load balancing strategy is introduced which directly addresses the problem of generating and conserving reasonably good subdomain shapes in a dynamically changing Finite Element Simulation. Geometric data is used to formulate several cost functions to rate elements in terms of their suitability to be migrated. The well known diffusive method which calculates the necessary load flow is enhanced by weighting the subdomain edges with the help of these cost functions. The proposed methods have been tested and results are presented.

Multilevel mesh partitioning for aspect ratio

Multilevel algorithms are a successful class of optimisation techniques which address the mesh partitioning problem. They usually combine a graph contraction algorithm together with a local optimisation method which refines the partition at each graph level. To date these algorithms have been used almost exclusively to minimise the cut-edge weight, however it has been shown that for certain classes of solution algorithm, the convergence of the solver is strongly influenced by the subdomain aspect ratio. In this paper therefore, we modify the multilevel algorithms in order to optimise a cost function based on aspect ratio. Several variants of the algorithms are tested and shown to provide excellent results.

Aspect ratio for mesh partitioning

This paper deals with the measure of Aspect Ratio for mesh partitioning and gives hints why, for certain solvers, the Aspect Ratio of partitions plays an important role. We define and rate different kinds of Aspect Ratio, present a new center-based partitioning method which optimizes this measure implicitly and rate several existing partitioning methods and tools under the criterion of Aspect Ratio.

Self-consistent equilibrium calculation through a direct variational technique in tokamak plasmas

A self-consistent equilibrium calculation, valid for arbitrary aspect ratio tokamaks, is obtained through a direct variational technique that reduces the equilibrium solution, in general obtained from the 2D Grad-Shafranov equation, to a 1D problem in the radial flux coordinate rho. The plasma current profile is supposed to have contributions of the diamagnetic, Pfirsch-Schluter and the neoclassical ohmic and bootstrap currents. An iterative procedure is introduced into our code until the flux surface averaged toroidal current density (J(T)), converges to within a specified tolerance for a given pressure profile and prescribed boundary conditions. The convergence criterion is applied between the (J(T)) profile used to calculate the equilibrium through the variational procedure and the one that results from the equilibrium and given by the sum of all current components. The ohmic contribution is calculated from the neoclassical conductivity and from the self-consistently determined loop voltage in order to give the prescribed value of the total plasma current. The bootstrap current is estimated through the full matrix Hirshman-Sigmar model with the viscosity coefficients as proposed by Shaing, which are valid in all plasma collisionality regimes and arbitrary aspect ratios. The results of the self-consistent calculation are presented for the low aspect ratio tokamak Experimento Tokamak Esferico. A comparison among different models for the bootstrap current estimate is also performed and their possible Limitations to the self-consistent calculation is analysed.

Mullite whiskers grown from erbia-doped aluminum hydroxide-silica gel

Mullite whiskers and anisotropic grains that were derived from erbia-doped aluminum hydroxide-silica gel were studied. Firing 3.0-mol%-erbia-doped isostatically pressed pellets at 1600 degrees C for 1.0-8.0 h resulted in a high surface concentration of mullite whiskers. Their c-axes were aligned preferentially along the pellet surface; the maximum length was 50 mu m, and the maximum aspect ratio was 23. The pellet surface was fully covered by mullite whiskers, and small anisotropic grains with a low aspect ratio were observed in the bulk. The voids that were observed in the fracture surfaces were covered fully by mullite whiskers. The large number of voids resulted in an apparent density of 1.60 g/cm(3) in the sintered pellets. The molar ratio of alumina to silica in the whiskers was in the range of 1.30-1.45 tan average value of 1.31), regardless of whether the alumina/silica powder compositions were mixed in a 3:2 or 2:1 ratio.

(Table 1) Compressional- and share-wave velocieties at elevated confining pressure of ODP Holes 136-842C and 136-843A

Identification of a sediment/basement contact using seismic reflection recordings has proven to be extremely difficult in wide areas of the North Pacific Ocean owing to the presence of massive, highly reflective chert layers within the sediment column. Leg 136 of the Ocean Drilling Program recovered coherent pieces of chert of sufficient size for the first comprehensive laboratory measurements of the seismic properties of this material. Compressional-wave velocities of six samples at 40-MPa confining pressure averaged 5.33 km/s, whereas shear-wave velocities at the same pressure averaged 3.48 km/s. Velocities were independent of porosity, which ranged from 5% to 13%, suggesting that pores within the samples were mostly high aspect ratio vugs as opposed to low aspect ratio cracks. Back-scattered electron images made with a scanning electron microscope confirmed this observation. Acoustic impedances were calculated for the chert samples and from shipboard measurements of the red clay sediment overlying the chert layers. An extremely large compressional-wave reflection coefficient (0.73) characterized the interface between the two lithologies. A synthetic seismogram was calculated using chert and typical pelagic carbonate properties to illustrate the influence of chert layers on a marine seismic-reflection section. Compressional-wave to shear-wave velocity ratios of the chert samples (Vp/Vs =1.53) are close to that of single-crystal quartz in spite of variable porosity. Shear-wave reflection coefficients are estimated to be approximately 0.94. A compressional-wave reflection coefficient for a basement/sediment (carbonate) interface is estimated to be approximately 0.50, significantly less than that of sediment/chert.

Systematic Analysis of Direct-Drive Baseline Designs for Shock-Ignition with the Laser Megajoule

Direct-drive inertial confinement thermonuclear fusion consists in illuminating a shell of cryogenic Deuterium and Tritium (DT) mixture with many intense beams of laser light. Capsule is composed of DT gassurrounded by cryogenic DT as combustible fuel. Basic rules are used to define shell geometry from aspect ratio, fuel mass and layers densities. We define baseline designs using two aspect ratio (A=3 and A=5) who complete HiPER baseline design (A=7.7). Aspect ratio is defined as the ratio of ice DT shell inner radius over DT shell thickness. Low aspect ratio improves hydrodynamics stabilities of imploding shell. Laser impulsion shape and ablator thickness are initially defined by using Lindl (1995) pressure ablation and mass ablation formulae for direct-drive using CH layer as ablator. In flight adiabat parameter is close to one during implosion. Velocitie simplosions chosen are between 260 km/s and 365 km/s. More than thousand calculations are realized for each aspect ratio in order to optimize the laser pulse shape. Calculations are performed using the one-dimensional version of the Lagrangian radiation hydrodynamics FCI2. We choose implosion velocities for each initial aspect ratio, and we compute scaled-target family curves for each one to find self-ignition threshold. Then, we pick points on each curves that potentially product high thermonuclear gain and compute shock ignition in the context of Laser MegaJoule. This systematic analyze reveals many working points which complete previous studies ´allowing to highlight baseline designs, according to laser intensity and energy, combustible mass and initial aspect ratio to be relevant for Laser MegaJoule.

Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates

The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.

Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications

El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.

Experimental and numerical assessment of the aeroelastic stability of blade pair packages

The stabilizing effect of grouping rotor blades in pairs has been assessed both, numerically and experimentally. The bending and torsion modes of a low aspect ratio high speed turbine cascade tested in the non-rotating test facility at EPFL (Ecole Polytechnique Fédérale de Lausanne) have been chosen as the case study. The controlled vibration of 20 blades in travelling wave form was performed by means of an electromagnetic excitation system, enabling the adjustement of the vibration amplitude and inter blade phase at a given frequency. Unsteady pressure transducers located along the blade mid-section were used to obtain the modulus and phase of the unsteady pressure caused by the airfoil motion. The stabilizing effect of the torsion mode was clearly observed both in the experiments and the simulations, however the effect of grouping the blades in pairs in the minimum damping at the tested frequency was marginal in the bending mode. A numerical tool was validated using the available experimental data and then used to extend the results at lower and more relevant reduced frequencies. It is shown that the stabilizing effect exists for the bending and torsion modes in the frequency range typical of low-pressure turbines. It is concluded that the stabilizing effect of this configuration is due to the shielding effect of the pressure side of the airfoil that defines the passage of the pair on the suction side of the same passage, since the relative motion between both is null. This effect is observed both in the experiments and simulations.

Design and development of compact optical systems = Diseño y desarrollo de sistemas ópticos compactos

Esta tesis considera dos tipos de aplicaciones del diseño óptico: óptica formadora de imagen por un lado, y óptica anidólica (nonimaging) o no formadora de imagen, por otro. Las ópticas formadoras de imagen tienen como objetivo la obtención de imágenes de puntos del objeto en el plano de la imagen. Por su parte, la óptica anidólica, surgida del desarrollo de aplicaciones de concentración e iluminación, se centra en la transferencia de energía en forma de luz de forma eficiente. En general, son preferibles los diseños ópticos que den como resultado sistemas compactos, para ambos tipos de ópticas (formadora de imagen y anidólica). En el caso de los sistemas anidólicos, una óptica compacta permite tener costes de producción reducidos. Hay dos razones: (1) una óptica compacta presenta volúmenes reducidos, lo que significa que se necesita menos material para la producción en masa; (2) una óptica compacta es pequeña y ligera, lo que ahorra costes en el transporte. Para los sistemas ópticos de formación de imagen, además de las ventajas anteriores, una óptica compacta aumenta la portabilidad de los dispositivos, que es una gran ventaja en tecnologías de visualización portátiles, tales como cascos de realidad virtual (HMD del inglés Head Mounted Display). Esta tesis se centra por tanto en nuevos enfoques de diseño de sistemas ópticos compactos para aplicaciones tanto de formación de imagen, como anidólicas. Los colimadores son uno de los diseños clásicos dentro la óptica anidólica, y se pueden utilizar en aplicaciones fotovoltaicas y de iluminación. Hay varios enfoques a la hora de diseñar estos colimadores. Los diseños convencionales tienen una relación de aspecto mayor que 0.5. Con el fin de reducir la altura del colimador manteniendo el área de iluminación, esta tesis presenta un diseño de un colimador multicanal. En óptica formadora de imagen, las superficies asféricas y las superficies sin simetría de revolución (o freeform) son de gran utilidad de cara al control de las aberraciones de la imagen y para reducir el número y tamaño de los elementos ópticos. Debido al rápido desarrollo de sistemas de computación digital, los trazados de rayos se pueden realizar de forma rápida y sencilla para evaluar el rendimiento del sistema óptico analizado. Esto ha llevado a los diseños ópticos modernos a ser generados mediante el uso de diferentes técnicas de optimización multi-paramétricas. Estas técnicas requieren un buen diseño inicial como punto de partida para el diseño final, que será obtenido tras un proceso de optimización. Este proceso precisa un método de diseño directo para superficies asféricas y freeform que den como resultado un diseño cercano al óptimo. Un método de diseño basado en ecuaciones diferenciales se presenta en esta tesis para obtener un diseño óptico formado por una superficie freeform y dos superficies asféricas. Esta tesis consta de cinco capítulos. En Capítulo 1, se presentan los conceptos básicos de la óptica formadora de imagen y de la óptica anidólica, y se introducen las técnicas clásicas del diseño de las mismas. El Capítulo 2 describe el diseño de un colimador ultra-compacto. La relación de aspecto ultra-baja de este colimador se logra mediante el uso de una estructura multicanal. Se presentará su procedimiento de diseño, así como un prototipo fabricado y la caracterización del mismo. El Capítulo 3 describe los conceptos principales de la optimización de los sistemas ópticos: función de mérito y método de mínimos cuadrados amortiguados. La importancia de un buen punto de partida se demuestra mediante la presentación de un mismo ejemplo visto a través de diferentes enfoques de diseño. El método de las ecuaciones diferenciales se presenta como una herramienta ideal para obtener un buen punto de partida para la solución final. Además, diferentes técnicas de interpolación y representación de superficies asféricas y freeform se presentan para el procedimiento de optimización. El Capítulo 4 describe la aplicación del método de las ecuaciones diferenciales para un diseño de un sistema óptico de una sola superficie freeform. Algunos conceptos básicos de geometría diferencial son presentados para una mejor comprensión de la derivación de las ecuaciones diferenciales parciales. También se presenta un procedimiento de solución numérica. La condición inicial está elegida como un grado de libertad adicional para controlar la superficie donde se forma la imagen. Basado en este enfoque, un diseño anastigmático se puede obtener fácilmente y se utiliza como punto de partida para un ejemplo de diseño de un HMD con una única superficie reflectante. Después de la optimización, dicho diseño muestra mejor rendimiento. El Capítulo 5 describe el método de las ecuaciones diferenciales ampliado para diseños de dos superficies asféricas. Para diseños ópticos de una superficie, ni la superficie de imagen ni la correspondencia entre puntos del objeto y la imagen pueden ser prescritas. Con esta superficie adicional, la superficie de la imagen se puede prescribir. Esto conduce a un conjunto de tres ecuaciones diferenciales ordinarias implícitas. La solución numérica se puede obtener a través de cualquier software de cálculo numérico. Dicho procedimiento también se explica en este capítulo. Este método de diseño da como resultado una lente anastigmática, que se comparará con una lente aplanática. El diseño anastigmático converge mucho más rápido en la optimización y la solución final muestra un mejor rendimiento. ABSTRACT We will consider optical design from two points of view: imaging optics and nonimaging optics. Imaging optics focuses on the imaging of the points of the object. Nonimaging optics arose from the development of concentrators and illuminators, focuses on the transfer of light energy, and has wide applications in illumination and concentration photovoltaics. In general, compact optical systems are necessary for both imaging and nonimaging designs. For nonimaging optical systems, compact optics use to be important for reducing cost. The reasons are twofold: (1) compact optics is small in volume, which means less material is needed for mass-production; (2) compact optics is small in size and light in weight, which saves cost in transportation. For imaging optical systems, in addition to the above advantages, compact optics increases portability of devices as well, which contributes a lot to wearable display technologies such as Head Mounted Displays (HMD). This thesis presents novel design approaches of compact optical systems for both imaging and nonimaging applications. Collimator is a typical application of nonimaging optics in illumination, and can be used in concentration photovoltaics as well due to the reciprocity of light. There are several approaches for collimator designs. In general, all of these approaches have an aperture diameter to collimator height not greater than 2. In order to reduce the height of the collimator while maintaining the illumination area, a multichannel design is presented in this thesis. In imaging optics, aspheric and freeform surfaces are useful in controlling image aberrations and reducing the number and size of optical elements. Due to the rapid development of digital computing systems, ray tracing can be easily performed to evaluate the performance of optical system. This has led to the modern optical designs created by using different multi-parametric optimization techniques. These techniques require a good initial design to be a starting point so that the final design after optimization procedure can reach the optimum solution. This requires a direct design method for aspheric and freeform surface close to the optimum. A differential equation based design method is presented in this thesis to obtain single freeform and double aspheric surfaces. The thesis comprises of five chapters. In Chapter 1, basic concepts of imaging and nonimaging optics are presented and typical design techniques are introduced. Readers can obtain an understanding for the following chapters. Chapter 2 describes the design of ultra-compact collimator. The ultra-low aspect ratio of this collimator is achieved by using a multichannel structure. Its design procedure is presented together with a prototype and its evaluation. The ultra-compactness of the device has been approved. Chapter 3 describes the main concepts of optimizing optical systems: merit function and Damped Least-Squares method. The importance of a good starting point is demonstrated by presenting an example through different design approaches. The differential equation method is introduced as an ideal tool to obtain a good starting point for the final solution. Additionally, different interpolation and representation techniques for aspheric and freeform surface are presented for optimization procedure. Chapter 4 describes the application of differential equation method in the design of single freeform surface optical system. Basic concepts of differential geometry are presented for understanding the derivation of partial differential equations. A numerical solution procedure is also presented. The initial condition is chosen as an additional freedom to control the image surface. Based on this approach, anastigmatic designs can be readily obtained and is used as starting point for a single reflective surface HMD design example. After optimization, the evaluation shows better MTF. Chapter 5 describes the differential equation method extended to double aspheric surface designs. For single optical surface designs, neither image surface nor the mapping from object to image can be prescribed. With one more surface added, the image surface can be prescribed. This leads to a set of three implicit ordinary differential equations. Numerical solution can be obtained by MATLAB and its procedure is also explained. An anastigmatic lens is derived from this design method and compared with an aplanatic lens. The anastigmatic design converges much faster in optimization and the final solution shows better performance.